MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP
4
4 - 2
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20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs HEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC - 43 GHz
v02.0209
General Description
Features
Functional Diagram
Small Signal Gain: 12 dB
Output Voltage: up to 8V pk-pk
Single-Ended I/Os
High Speed Performance: 46 GHz 3 dB Bandwidth
Low Power Dissipation: 0.9 W
Small Die Size: 2.1 x 1.70 x 0.1 mm
Electrical Speci cations*, TA = +25 °C
Typical Applications
This HMC-AUH232 is ideal for:
• 40 Gb/s Lithium Niobate/ Mach Zender
Fiber Optic Modulators
• Broadband Gain Block for Test & Measurement
Equipment
• Broadband Gain Block for RF Applications
• Military & Space
The HMC-AUH232 is a GaAs MMIC HEMT Distributed
Driver Ampli er die which operates between DC and
43 GHz and provides a typical 3 dB bandwidth of
46 GHz. The ampli er provides 12 dB of small
signal gain while requiring only 180 mA from a +5V
supply. The HMC-AUH232 exhibits very good gain
and phase ripple to 40 GHz, and can output up to
8V peak-to-peak with low jitter, making it ideal for use
in broadband wireless, ber optic communication and
test equipment applications. The ampli er die occupies
less than 3.6 mm which facilitates easy integration
into Multi-Chip-Modules (MCMs). The HMC-AUH232
requires external bias-tee as well as off-chip blocking
components and bypass capacitors for the DC supply
lines. A gate voltage adjust, Vgg2 is provided for
limited gain adjustment, while Vgg1 adjusts the bias
current for the device.
HMC-AUH232
Parameter Min. Typ. Max. Units
Frequency Range DC - 43 GHz
Small Signal Gain 0.5 - 5.0 GHz 12 14 dB
35 - 45 GHz 10 12.5 dB
Input Return Loss 10 dB
Output Return Loss 8.5 dB
Supply Current 180 225 mA
3 dB Bandwidth 43 46 GHz
Gain Ripple (5 to 35 GHz) ±0.6 ±1 dB
Group Delay Variation[1]
0.5 - 5.0 GHz ±14 ±20 ps
5 - 30 GHz ±10 ±11 ps
30 - 45 GHz ±22 ±25 ps
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP
4
4 - 3
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-AUH232
v02.0209
GaAs HEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC - 43 GHz
Parameter Min. Typ. Max. Units
10% to 90% Rise / Fall Time[2] 6 - 12 ps
Output Voltage Level[3] 8V
p-p
Additive jitter (RMS) 0.4 ps
1 dB Output Gain Compression Point at 20 GHz 16.5 dBm
Output Power 20 GHz @ Pin= 15 dBm[4] 22 22 dBm
40 GHz @ Pin= 15 dBm[4] 17 19.5 dBm
Power Dissipation 0.9 1.25 W
Noise Figure
5 GHz 5.4 dB
10 & 15 GHz 4.2 dB
20 GHz 4.6 dB
25 GHz 5.4 dB
30 GHz 8.3 dB
35 GHz 7.4 dB
40 GHz 9.1 dB
[1] Measured with a 1 GHz aperture [4] Veri ed at RF on-wafer probe. Vgg1 is adjusted until the drain cur-
rent is 200 mA and Vgg2= 1.5 V.The drain voltage is applied through
the RF output port using a bias tee with 5 volts on the bias Tee.
[2] Measurement limited by rise/fall time of input reference signal
[3] With a 2.7 VP-P input signal
*Unless otherwise indicated, all measurements are from probed die
Electrical Speci cations (Continued)*
Parameter Symbol Min. Typ. Max. Units
Positive Supply Voltage VD56V
Positive Supply Current ID150 180 225 mA
RF Input Power 12 16 dBm
Bias Current Adjust Vgg1 -1.5 -0.2 V
Output Voltage Adjust Vgg2 0 1.5 2 V
Operating Temperature TOP 02585°C
Power Dissipation PD0.9 1.25 W
Recommended Operating Conditions
Parameter PDISS TBASE TCH RMTF
(W) (°C) (°C) (°C/W) (Hrs)
Thermal Resistance to back side of chip 1.25 85 145 48 5.8 x 108
Thermal resistance to backside of carrier using 25.4
um of 84-1LMIT epoxy 1.25 85 155 56 1.8 x 108
Thermal Resistance to back side of chip 1.25 110 170 48 3.9 x 107
Thermal resistance to backside of carrier using 25.4
um of 84-1LMIT epoxy 1.25 110 180 56 1.4 x 107
Thermal Characteristics
Parameter Symbol Typ. Units
Activation Energy EA1.7 eV
Median time to Failure (MTF)
@125 °C Channel Temperature MTF 6 x 109Hours
Reliability Characteristics
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP
4
4 - 4
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Input Return Loss vs. Frequency
Output Return Loss vs. Frequency
Gain vs. Frequency
Noise Figure vs. Frequency
Output Voltage Delta vs. Control Voltage
Note: Measured Performance Characteristics (Typical Per-
formance at 25°C) Vgg2 = 1.5V, Vdd= 5V, Idd = 200 mA
(Measured data obtained from die in a test xture unless
otherwise stated)
9
10
11
12
13
14
15
16
17
0 5 10 15 20 25 30 35 40 45
GAIN (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0 5 10 15 20 25 30 35 40 45
INPUT RETURN LOSS (dB)
FREQUENCY (GHz)
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35 40
NOISE FIGURE (dB)
FREQUENCY (GHz)
-35
-30
-25
-20
-15
-10
-5
0
0 5 10 15 20 25 30 35 40 45
OUTPUT RETURN LOSS (dB)
FREQUENCY (GHz)
-1.4
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
OUPUT VOLTAGE DELTA(Vpp)
Vgg2 PIN VOLTAGE
HMC-AUH232
v02.0209
GaAs HEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC - 43 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Absolute Maximum Ratings
Input Reference Signal
PRBS=231-1, 2.1V Input, Data rate of 40 Gb/s
Note: Measured Performance Characteristics (Typical Performance at 25°C) (Measured data obtained from die in a test xture
unless otherwise stated)
Output Reference Signal
PRBS=231-1, 7.3V Input, Data rate of 40 Gb/s
Drain Bias Voltage (Vdd) +6 Vdc
Gain Bias Voltage (Vgg1) -1.5 to 0 Vdc
Output Voltage Adjust (Vgg2) 0 to +2 Vdc
RF Input Power +18.5 dBm
40 Gb/s Input Voltage Pk-Pk (Vpp) 3V
Thermal Resistance
(channel to die bottom) 48 °C/W
Channel Temperature 180 °C
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +110 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC-AUH232
v02.0209
GaAs HEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC - 43 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP
4
4 - 6
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20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
Die Packaging Information [1]
Standard Alternate
GP-1 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
HMC-AUH232
v02.0209
GaAs HEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC - 43 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP
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Pad Number Function Description Interface Schematic
1 RES1 DC coupled 35 termination.
2Vgg1
Gate control for ampli er. Please follow “MMIC Ampli er Biasing
Procedure” application note. See assembly for required external
components.
5Vgg2
Gate Control for ampli er. Limited gain control adjust.
See Assembly Diagram for external components.
6 Vdd & RFOUT RF output and DC Bias (vdd) for the output stage.
3 RFIN DC coupled. Blocking Cap is needed.
4 RES2 AC coupled 50 termination.
Pad Descriptions
Application Circuit
HMC-AUH232
v02.0209
GaAs HEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC - 43 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP
4
4 - 8
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Assembly Diagram
Note 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network
HMC-AUH232
v02.0209
GaAs HEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC - 43 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP
4
4 - 9
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Device Mounting
• 1 mil diameter wire bonds are used on Vgg1 and Vgg2 connections to the capacitors and 27 resistors.
• 0.5mil x 3mil ribbon bonds are used on RF connections
• Capacitors and resistors on Vgg1 and Vgg2 are used to lter low frequency, <800MHz, RF pickup
• 35 and 50 resistors are fabricated on a 5mil alumina substrate and should be suitable for use as a high
frequency termination.
• For best gain atness and group delay variation, eccosorb can be epoxied on the transmission line
covering the center 3/4 of the transmission line length. Eccosorb may also be placed partially across the
Vg1 pad and 35 resistor for improved gain atness and group delay variation.
(The insertion of the transmission line helps reduce low frequency, <10GHz, gain ripple)
• Silver- lled conductive epoxy is used for die attachment
(Backside of the die should be grounded and the GND pads are connected to the backside metal through Vias)
Device Operation
These devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed
during handling, assembly and test.
The input to this device should be AC-coupled. To provide the typical 8Vpp output voltage swing, a 2.7Vpp AC-cou-
pled input voltage swing is required. At this output level, the device will be in 1dB to 3dB of compression.
Device Power Up Instructions
1. Ground the device
2. Bring Vgg1 to -0.5V (no drain current)
3. Bring Vgg2 to +1.5V (no drain current)
4. Bring Vdd to +5V (150mA to 225mA drain current)
(Initially the drain current will rise sharply with a small drain voltage, but will will atten out as Vdd approaches 5V)
• Vgg1 may be varied between -1V and 0V to provide the desired eye crossing point percentage
(i.e. 50% crosspoint) and a limited cross point control capability.
• Vdd may be increased to +5.5V if required to achieve greater output voltage swing.
• Vgg2 may be adjusted between +1.5V and +0.3V to vary the output voltage swing.
Device Power Down Instructions
1. Reverse the sequence identi ed above in steps 1 through 4.
HMC-AUH232
v02.0209
GaAs HEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC - 43 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP
4
4 - 10
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin lm substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin lm substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias
is applied. Use shielded signal and bias cables to minimize inductive
pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded
with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended.
Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made
with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve
reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
0.102mm (0.004”) Thick GaAs MMIC
Ribbon Bond
0.076mm
(0.003”)
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Ribbon Bond
0.076mm
(0.003”)
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010” Thick Alumina
Thin Film Substrate
Figure 2.
HMC-AUH232
v02.0209
GaAs HEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC - 43 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP
4
4 - 11
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Notes
HMC-AUH232
v02.0209
GaAs HEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC - 43 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
