EL2125CN - Elantec Semiconductor

Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a “controlled document”. Current revisions, if any, to these

specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation.

EL2125C - Preliminary

Features

•Voltage noise of only 0.83nV/√Hz

•Current noise of only 2.4pA/√Hz

•Low offset voltage ≤200µV

•180MHz -3dB BW for AV=10

•Low supply current - 10mA

•SOT23 package available

•±2.5V to ±15V operation

Applications

•Ultrasound input amplifiers

•Wideband instrumentation

•Communication equipment

•AGC & PLL active filters

•Wideband sensors

Ordering Information

Part No Package Tape & Reel Outline #

EL2125CW 5-Pin SOT23 MDP0038

EL2125CS 8-Pin SO MDP0027

EL2125CN 8-Pin PDIP MDP0031

General Description

The EL2125C is an ultra-low noise, wideband amplifier that runs on

half the supply current of competitive parts. It is intended for use in

systems such as ultrasound imaging where a very small signal needs to

be amplified by a large amount without adding significant noise. Its

low power dissipation enables it to be packaged in the tiny SOT23

package, which further helps systems where many input channels cre-

ate both space and power dissipation problems.

The EL2125C is stable for gains of 10 and greater and uses traditional

voltage feedback. This allows the use of reactive elements in the feed-

back loop, a common requirement for many filter topologies. It

operates from ±2.5V to ±15V supplies and is available in a 5-pin

SOT23 package and 8-pin SO and 8-pin PDIP packages.

The EL2125C is fabricated in Elantec’s proprietary complementary

bipolar process, and is specified for operation from -45°C to +85°C.

Connection Diagrams

EL2125CS

(8-Pin SO and 8-Pin PDIP)

EL2125CW

(5-Pin SOT23)

VS+

IN-IN+

VS-

OUT

IN-

IN+

VS-

VS+

OUT

EL2125C - Preliminary

Ultra-low Noise, Low Power, Wideband Amplifier

October 2, 2001

EL2125C - Preliminary

Ultra-low Noise, Low Power, Wideband Amplifier

EL2125C - Preliminary

Absolute Maximum Ratings (TA = 25°C)

VS+ to VS- 33V

Continuous Output Current 40mA

Any Input VS- - 0.3V to VS+ + 0.3V

Power Dissipation See Curves

Operating Temperature -45°C to +85°C

Storage Temperature -60°C to +150°C

Important Note:

All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the

specified temperature and are pulsed tests, therefore: TJ = TC = TA

Electrical Characteristics

VS = ±5V, TA = 25°C, RF = 180Ω, RG = 20Ω, RL = 500Ω unless otherwise specified.

Parameter Description Conditions Min Typ Max Unit

DC Performance

VOS Input Offset Voltage (SO8 & PDIP8) -0.2 2 mV

Input Offset Voltage (SOT23-5) 3 mV

TCVOS Offset Voltage Temperature Coefficient TBD µV/°C

IBInput Bias Current -30 -21 µA

IOS Input Bias Current Offset 0.2 1µA

TCIB Input Bias Current Temperature Coefficient TBD nA/°C

CIN Input Capacitance 2.2 pF

AVOL Open Loop Gain 65 81 dB

PSRR Power Supply Rejection Ratio [1] 75 96 dB

CMRR Common Mode Rejection Ratio [2] 65 100 dB

CMIR Common Mode Input Range V

VOUT Output Voltage Swing No load, RF = 1kΩ3.5 3.8 V

VOUTL Output Voltage Swing RL = 100Ω2.8 3.1 V

IOUT Output Short Circuit Current [3] 80 100 mA

ISSupply Current 10.1 12 mA

AC Performance - RG = 20Ω, CL = 5pF

BW -3dB Bandwidth 175 MHz

BW ±0.1dB ±0.1dB Bandwidth 34 MHz

BW ±1dB ±1dB Bandwidth 150 MHz

Peaking Peaking 0.4 dB

SR Slew Rate VOUT = 2VPP, measured at 20% to 80% TBD 190 V/µs

OS Overshoot, 4Vpk-pk Output Square Wave Positive 0.6 %

Negative 2.7 %

TSSettling Time to 0.1% of ±1V Pulse TBD ns

VNVoltage Noise Spectral Density 0.83 nV/√Hz

INCurrent Noise Spectral Density 2.4 pA/√Hz

HD2 2nd Harmonic Distortion [4] TBD dBc

HD3 3rd Harmonic Distortion [4] TBD dBc

THD Total Harmonic Distortion [5] TBD dBc

IMD Intermodulation Distortion [6] TBD %

1. Measured by moving the supplies from ±4V to ±6V

2. Measured by moving the inputs from +3.5V to -4.4V

3. Pulse test only

4. Frequency = 10MHz, VOUT = 1Vpk-pk, into 100Ω and 5pF load

5. Frequency = 20MHz, VOUT = -20dBm (0.0274VRMS) into 500Ω and 15pF load

6. Two-tone IMD, frequencies = 5MHz and 6MHz at -20dBm output level, RLOAD = 500Ω and 15pF

EL2125C - Preliminary

Ultra-low Noise, Low Power, Wideband Amplifier

EL2125C - Preliminary

Electrical Characteristics

VS = ±15V, TA = 25°C, RF = 180Ω, RG = 20Ω, RL = 500Ω unless otherwise specified.

Parameter Description Conditions Min Typ Max Unit

DC Performance

VOS Input Offset Voltage (SO8 & PDIP8) -0.2 2 mV

Input Offset Voltage (SOT23-5) 3 mV

TCVOS Offset Voltage Temperature Coefficient TBD µV/°C

IBInput Bias Current -30 -21 µA

IOS Input Bias Current Offset 0.16 1µA

TCIB Input Bias Current Temperature Coefficient TBD nA/°C

CIN Input Capacitance 2.2 pF

AVOL Open Loop Gain 75 86 dB

PSRR Power Supply Rejection Ratio [1] 75 95 dB

CMRR Common Mode Rejection Ratio [2] 75 100 dB

CMIR Common Mode Input Range TBD V

VOUT Output Voltage Swing No load, RF = 1kΩ13.5 V

VOUTL Output Voltage Swing Positive, RF = 180Ω, RL = 500Ω12.1 V

Negative -11.3 V

IOUT Output Short Circuit Current [3] 100 150 mA

ISSupply Current 10.8 12 mA

AC Performance - RG = 20Ω, CL = 5pF

BW -3dB Bandwidth 220 MHz

BW ±0.1dB ±0.1dB Bandwidth 23 MHz

BW ±1dB ±1dB Bandwidth 63 MHz

Peaking Peaking 2.5 dB

SR Slew Rate VOUT = 2VPP, measured at 20% to 80% TBD 225 V/µs

OS Overshoot, 4Vpk-pk Output Square Wave 0.6 %

TSSettling Time to 0.1% of ±1V Pulse TBD ns

VNVoltage Noise Spectral Density 0.95 nV/√Hz

INCurrent Noise Spectral Density 2.1 pA/√Hz

HD2 2nd Harmonic Distortion [4] TBD dBc

HD3 3rd Harmonic Distortion [4] TBD dBc

THD Total Harmonic Distortion [5] TBD dBc

IMD Intermodulation Distortion [6] TBD %

1. Measured by moving the supplies from ±13.5V to ±16.5V

2. Measured by moving the inputs from +13.5V to -14.4V

3. Pulse test only

4. Frequency = 10MHz, VOUT = 1Vpk-pk, into 100Ω and 5pF load

5. Frequency = 20MHz, VOUT = -20dBm (0.0274VRMS) into 500Ω and 15pF load

6. Two-tone IMD, frequencies = 5MHz and 6MHz at -20dBm output level, RLOAD = 500Ω and 15pF

EL2125C - Preliminary

Ultra-low Noise, Low Power, Wideband Amplifier

EL2125C - Preliminary

Typical Performance Curves

Non-Inverting Frequency Response for Various RF

-5

1M 10M 100M 1G

Frequency (Hz)

Normalized Gain (dB)

Inverting Frequency Response for Various RF

-2

-6

-10

-14

1M 10M 100M 1G

Frequency (Hz)

Normalized Gain (dB)

Inverting Frequency Response for Various RF

-2

-6

-10

-14

1M 10M 100M 1G

Frequency (Hz)

Normalized Gain (dB)

Non-Inverting Frequency Response for Various RF

-5

1M 10M 100M 1G

Frequency (Hz)

Normalized Gain (dB)

RF=1kΩRF=499Ω

RF=180Ω

RF=100Ω

RF=1kΩRF=180Ω

RF=700Ω

RF=100Ω

RF=499Ω

VS=±5V

AV=-10

CL=5pF

RF=1kΩ

RF=350Ω

RF=200Ω

RF=97.6Ω

RF=499Ω

VS=±15V

AV=-10

CL=5pF

RF=1kΩ

RF=350Ω

RF=200Ω

RF=499Ω

RF=97.6Ω

VS=±5V

AV=10

RL=500Ω

CL=5pF

VS=±15V

AV=10

RL=500Ω

CL=5pF

-5

1M 10M 100M 1G

Frequency (Hz)

Normalized Gain (dB)

Non-Inverting Frequency Response vs Gain

VS=±5V

RL=500Ω

CL=5pF

RG=20Ω

-5

Normalized Gain (dB)

Non-Inverting Frequency Response for Various Gain

AV=10

AV=20

AV=50

VS=±15V

RL=500Ω

CL=5pF

RF=700Ω

1M 10M 100M 1G

Frequency (Hz)

AV=10AV=20AV=50

EL2125C - Preliminary

Ultra-low Noise, Low Power, Wideband Amplifier

EL2125C - Preliminary

Typical Performance Curves

Normalized Gain (dB)

Inverting Frequency Response vs Gain

-2

-6

-10

-14

Normalized Gain (dB)

Inverting Frequency Response vs Gain

1M 10M 100M 1G

Frequency (Hz)

-14

AV=-10

RF=350kΩ

AV=-50

RF=1.75kΩAV=-20

RF=700kΩ

VS=±5V

RL=500Ω

CL=5pF

1M 10M 100M 1G

Frequency (Hz)

AV=-50 AV=-20

AV=-10

VS=±15V

RL=500Ω

CL=5pF

RG=50Ω

-5

Normalized Gain (dB)

Non-Inverting Frequency Response for Various Output

Signal Levels

-14

Normalized Gain (dB)

Inverting Frequency Response for Various Output Signal

Levels

1M 10M 100M 1G

Frequency (Hz)

VS=±5V

AV=10

RF=180Ω

RL= 500Ω

CL=5pF

1VPP

2VPP

4VPP

30mVPP

500mVPP

1VPP

1M 10M 100M 1G

Frequency (Hz)

VS=±5V

AV=-10

RF=350Ω

RL= 500Ω

CL=5pF

2.5VPP

500mVPP

3.3VPP

250mVPP

1VPP

3mVPP

Normalized Gain (dB)

Non-Inverting Frequency Response for Various CL

-1

-3

Normalized Gain (dB)

Non-Inverting Frequency Response for Various CL

-5

1M 10M 100M 1G

Frequency (Hz)

VS=±5V

AV=10

RF=180Ω

RL=500Ω

CL=28.5pF

CL=16pF

CL=5pF

CL=1pF

-5

1M 10M 100M 1G

Frequency (Hz)

VS=±5V

AV=10

RF=700Ω

RL=500Ω

CL=17pF

CL=11pF

CL=1.2pF

CL=5pF

EL2125C - Preliminary

Ultra-low Noise, Low Power, Wideband Amplifier

EL2125C - Preliminary

Typical Performance Curves

Normalized Gain (dB)

Inverting Frequency Response for Various CL

Normalized Gain (dB)

Inverting Frequency Response for Various CL

-2

-6

-10

1M 10M 100M 1G

Frequency (Hz)

-14

CL=29.4pF

CL=16.4pF

CL=11.4pF

CL=5.1pF

CL=1.2pF

VS=±5V

AV=10

RF=350Ω

RL=500Ω-14

1M 10M 100M 1G

Frequency (Hz)

CL=29.4pF

CL=16.4pF

CL=11.4pF

CL=5.1pF

CL=1.2pF

VS=±15V

AV=10

RF=500Ω

RL=500Ω

Open Loop Gain (dB)

10k

Open Loop Gain and Phase

10M

100

100k 100M

Frequency (Hz)

Phase (°)

-250

-50

-150

150

250

Supply Voltage (±V)

Supply Current (mA)

Supply Current vs Supply Voltage

4.8

2.4

3 12 15

9.6

7.2

6 9

Peaking vs Supply Voltage

2.5

1.5

0.5

02 4 6 8 10 12 14 16

VS (±V)

Peaking (dB)

AV=10

AV=-10

AV=50AV=-50 AV=20AV=-20

3dB Bandwidth vs Supply Voltage

250

200

150

100

02 4 6 8 10 12 14 16

VS (±V)

Bandwidth (MHz)

AV=10

AV=-10

AV=50 AV=-50AV=20AV=-20

400M

EL2125C - Preliminary

Ultra-low Noise, Low Power, Wideband Amplifier

EL2125C - Preliminary

Typical Performance Curves

10ns/div

20mV/div

Small Signal Step Response Small Signal Step Response

VINx2

VS=±5V

RL=500Ω

RF=180Ω

AV=10

CL=5pF

10ns/div

20mV/div

VINx2

VS=±15V

RL=500Ω

RF=180Ω

AV=10

CL=5pF

Time (20ns/div)

Output Voltage (0.5V/div)

Large-Signal Step Response

VS=±5V

RL=500Ω

RF=180Ω

AV=10

CL=5pF

Time (20ns/div)

Output Voltage (0.5V/div)

Large-Signal Step Response

VS=±15V

RL=500Ω

RF=180Ω

AV=10

CL=5pF

1MHz Harmonic Distortion vs Output Swing

-40

-50

-60

-70

-90

-100

-1100 6 7

VOUT (VPP)

Distortion (dBc)

1MHz Harmonic Distortion vs Output Swing

-30

-40

-60

-80

-90

-100

-1100 5 25

VOUT (VPP)

Distortion (dBc)

4 52 31

-80

VS=±5V

RF=180Ω

AV=10

RL=500Ω

2nd H

3rd H

VS=±15V

RF=180Ω

AV=10

RL=500Ω

10 15 20

-50

-70

2nd H

3rd H

EL2125C - Preliminary

Ultra-low Noise, Low Power, Wideband Amplifier

EL2125C - Preliminary

Typical Performance Curves

Voltage and Current Noise vs Frequency

100

0.110 100 1k 10k 100k

Frequency (Hz)

Voltage Noise (nV/√Hz), Current Noise (pA/√Hz)

VN, VS=±15V

IN, VS=±5V

IN, VS=±15V

VN, VS=±5V

Settling Time vs Accuracy

0.1 1 10

Accuracy (%)

Settling Time (ns)

VS=±15V

VO=5VPP

VS=±5V

VO=5VPP

VS=±15V

VO=2VPP

VS=±5V

VO=2VPP

Total Harmonic Distortion vs Frequency

-30

-60

-80

-901k 10k 100M

Frequency (Hz)

THD (dBc)

VS=±5V

VO=2VPP

AV=10

RF=180Ω

RL=500Ω

100k 1M 10M

-40

-50

-70

-6

1 400

Frequency (MHz)

Group Delay (ns)

Group Delay

-2

10 100

AV=20

AV=10

VS=±15V

-110

-10

10 100M

Frequency (Hz)

CMRR (dB)

CMRR

-70

-30

-50

-99

100 10M1k 10k 100k 1M

PSRR (dB)

10K

PSRR

10M

110

100K 100M

Frequency (Hz)

PSRR-

PSRR+

600M

EL2125C - Preliminary

Ultra-low Noise, Low Power, Wideband Amplifier

EL2125C - Preliminary

Typical Performance Curves

Bandwidth vs Temperature

200

160

-40 160

Temperature (°C)

-3dB Bandwidth (MHz)

120

800 40 120

3.5

2.5

1.5

0.5

Peaking (dB)

Bandwidth

Peaking

R out(¾)

0.001

0.1

0.01

10k

Closed Loop Output Impedance vs Frequency

100

Frequency (Hz)

100M100k 1M 10M

EL2125C - Preliminary

Ultra-low Noise, Low Power, Wideband Amplifier

EL2125C - Preliminary

General Disclaimer

Specifications contained in this data sheet are in effect as of the publication date shown. Elantec, Inc. reserves the right to make changes in the cir-

cuitry or specifications contained herein at any time without notice. Elantec, Inc. assumes no responsibility for the use of any circuits described

herein and makes no representations that they are free from patent infringement.

WARNING - Life Support Policy

Elantec, Inc. products are not authorized for and should not be used

within Life Support Systems without the specific written consent of

Elantec, Inc. Life Support systems are equipment intended to sup-

port or sustain life and whose failure to perform when properly used

in accordance with instructions provided can be reasonably

expected to result in significant personal injury or death. Users con-

templating application of Elantec, Inc. Products in Life Support

Systems are requested to contact Elantec, Inc. factory headquarters

to establish suitable terms & conditions for these applications. Elan-

tec, Inc.’s warranty is limited to replacement of defective

components and does not cover injury to persons or property or

other consequential damages.

October 2, 2001

Printed in U.S.A.

Elantec Semiconductor, Inc.

675 Trade Zone Blvd.

Milpitas, CA 95035

Telephone: (408) 945-1323

(888) ELANTEC

Fax: (408) 945-9305

European Office: +44-118-977-6020

Japan Technical Center: +81-45-682-5820