SILICON EPITAXIAL PLANAR TYPE HIGH SPEED SWITCHING APPLICATIONS. 1$$250 Unit in mm - Low Forward Voltage : VF=0.9V(Typ.) +05 25-0.3 . Fast Reverse Recovery Time trr=l.6ns (Max. ) Small Total Capacitance : CT=1.5pF (Typ. ) Small Package SC-59 N oO 4 a N MAXIMUM RATINGS (Ta=25C) g| s| Ao CHARACTERISTIC SYMBOL RATING UNIT Ne a so +0 Peak Reverse Voltage VRM 250 Vv * = Reverse Voltage VR 200 Vv ~ f Peak Forward Current lr 300 mA , Average Forward Current lo 100 mA 2 my - 3 LN. Surge Current (10ms) IFSM 2 A Io 2. ANODE 3. CATHODE Power Dissipation P 150 mW JEDEC - Junction Temperature Tj 125 C EIAJ 8C-59 Storage Temperature Range Tstg ~55~125 c TOSHIBA 1-3G1B Weight 0.012 ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.| TYP.| MAX.] UNIT = - 72 1.0 Forward Voltage VEC) Tp=1OmA 0 v VF(2) | lp=100mA - 0.9 | 1.2 = - - 0.1 Reverse Current fRO) VR=50V uA TR(2)_ |[VR=200V - - 1.0 Total Capacitance CT Vp=0, f=1MHz - 1.5 3.0 pF . Ip=lOmA, Ip=10mA 10 60 n - s Reverse Recovery Time trr RL=100 (Fig.1) . Markin Fig. 1 REVERSE RECOVERY TIME (trr) TEST CIRCUIT r 8 p INPUT WAVEFORM OUTPUT WAVEFORM F 5 0 OUTPUT . Gg INPUT | 0.01 4F Ip=10mA } g 0 =F -6V 8 Ip O11 LJ OSCILOSCOPE R 50ns CRyy=500.) PULSE GENERATOR tre ( Rout = 500.) 4141 1$$250 Ip VF In YR ~ = 4 3 Ta=100C a a a fa<} a 75 uw a & 2 g z o 2 Oo S S ua Ei j fl e a Oo > Be a 103 6 02 04 06 08 10 12 14 16 18 20 0 50 100 150 200 250 300 350 400 FORWARD VOLTAGE Vp () REVERSE VOLTAGE Vp (V) Cp V T R ~ tre ~ Ip wa o~ a o & a oe 6 a ~ oO & B 2 Z a 22 uo oi <i > me oO At ao o a a wl B 5 & S 03 1 3 10 30 100 = 300 = 0.3 1 3 10 30 100 REVERSE VOLTAGE Vy (V) FORWARD CURRENT Ip (mA) 1142