221 WEST INDUSTRY COURT
DEER PARK, NY 11729-4681
PHONE (631) 586-7600
FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com
E-mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 319, REV. A
HERMETIC POWER MOSFET
N-CHANNEL QUAD
FEATURES:
100 Volt, 0.35 Ohm, 6.2A MOSFET
Fast Switching
Low RDS (on)
Equivalent to IRF120 Series
MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.
RATING SYMBOL MIN. TYP. MAX. UNITS
GATE TO SOURCE VOLTAGE VGS - - 20 Volts
ON-STATE DRAIN CURRENT @ TC = 25CID- - 6.2 Amps
PULSED DRAIN CURRENT (10ms) IDM - - 12 Amps
OPERATING AND STORAGE TEMPERATURE TOP/TSTG -55 - +150 C
TOTAL DEVICE DISSIPATION @ TC = 25CPD- - 27 Watts
THERMAL RESISTANCE, JUNCTION TO CASE RthJC - - 4.7 C/W
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNITS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = 250mA
BVDSS 100 - - Volts
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
VGS = 10V, ID = 0.6x rated ID
RDS(ON) - - 0.35 W
GATE THRESHOLD VOLTAGE VDS = VGS, ID = 250mAVGS(th) 2.0 - 4.0 Volts
FORWARD TRANSCONDUCTANCE
VDS ID (ON) X RDS (ON) Max., IDS = 0.6 X ID
gfs 2.7 4.1 - S(1/W)
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = Max. Rating, VGS = 0V
VDS = 0.8xMax. Rating, VGS = 0V, TJ = 125C
IDSS
- -
250
1000
mA
GATE TO SOURCE LEAKAGE FORWARD VGS = 20V
GATE TO SOURCE LEAKAGE REVERSE VGS = -20V
IGSS - - 100
-100
nA
TURN ON DELAY TIME VDD = 50V,
RISE TIME ID = .5xID,
TURN OFF DELAY TIME RG = 18W,
FALL TIME VGS = 10V
td(ON)
tr
td(OFF)
tf
- 8.8
30
19
20
13
45
29
30
nsec
DIODE FORWARD VOLTAGE TC = 25C, IS = ID,
VGS = 0V
VSD - - 2.5 Volts
REVERSE RECOVERY TIME TJ = 25C,
If = ID,
diF/ds = 100A/msec,
trr 55 110 240
nsec
INPUT CAPACITANCE VGS = 0 V
OUTPUT CAPACITANCE VDS = 25 V
REVERSE TRANSFER CAPACITANCE f = 1.0MHz
Ciss
Coss
Crss
- 350
130
36
-
pF
SHD230202