HYS72D32500GR-8-B - Infineon Technologies

Never stop thinking.

HYS72D32500GR–[7F/7/8]–B

HYS72D64500GR–[7F/7/8]–B

HYS72D1285[20/21]GR–[7F/7]–B

HYS72D128521GR–8–B

Registered DDR SDRAM-Modules

DDR SDRAM

Data Sheet, Rev. 1.03, Jan. 2004

Memory Products

Edition 2004-01

Published by Infineon Technologies AG,

St.-Martin-Strasse 53,

81669 München, Germany

Attentio n please!

The information herein is given to describe certain components and shall not be considered as a guarantee of

characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding

circuits, descriptions and charts stated herein.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in

question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written

approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure

of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support

devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain

and/or protect human life . If they fail, it is reasonable to assume that the health of the user or other persons may

be endangered.

Edition 2 004- 01

Published by Infineon Technologies AG,

St.-Ma rtin -St ra sse 53,

81669 München, Germany

Attention please!

The information herein is given to describe certain components and shall not be considered as a guarantee of

characteristics.

Terms of delivery and rights to technical change reserved.

W e hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding

circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide

(www.infineon.com).

Warnings

Due to technical requirements components ma y contain dangerous substances. F or inf ormation on the types in

question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written

approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the

failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life

support devices or systems are intended to be implanted in the human body, or to support and/or maintain and

sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other

persons may be endangered.

HYS72D32500GR–[7F/7/8]–B

HYS72D64500GR–[7F/7/8]–B

HYS72D1285[20/21]GR–[7F/7]–B

HYS72D128521GR–8–B

Registered DDR SDRAM-Modules

DDR SDRAM

Data Sheet, Rev. 1.03, Jan. 2004

Memory Products

Never stop thinking.

Data Sheet, Rev. 1.03, Jan. 2004

Memory Products

HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B

Registered DDR SDRAM-Modules

Data Sheet 4 Rev. 1.03 2004-01

HYS72D32500GR–[7F/7/8]–B, HYS72D64500GR–[7F/7/8]–B, HYS72D1285[20/21]GR–[7F/7]–B

Revision History: Rev. 1.03 2004-01

Previous Version: V.092

Page Subjects (major changes since last revision)

all Editorial changes

We Listen to Your Comments

Any information within this document that you feel is wrong, unclear or missing at all?

Your feedback will help us to continuously improve the quality of this document.

Please send your proposal (including a reference to this document) to:

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Data Sheet 5 Rev. 1.03, 2004-01
 
 
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B
Registered  DDR SDRAM-Modules
1Overview  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  6
1.1 Features  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  6
1.2 Description  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  6
2 Pin Configuration  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  14
3.1 Operating Conditions  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  14
3.2 Current Specification and Conditions  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  15
3.3 AC Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  18
4 SPD Contents  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  21
5 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  32
6 Application Note . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Table of Contents

HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B

Registered DDR SDRAM-Modules

Overview

Data Sheet 6 Rev. 1.03 2004-01

1 Overview

1.1 Features

• 184-Pin Registered 8-Byte Dual-In-Line

DDR SDRAM Module for “1U” PC, Workstation and Server main memory applications

• One rank 32M ×72, 64M × 72 and two ranks 128M ×72 organization

• JEDEC standard Double Data Rate Synchronous DRAMs (DDR SDRAM) with a single + 2.5 V (±0.2 V) power

supply

• Built with DDR SDRAMs in 66-Lead TSOPII package

• Programm abl e CAS Latency, Burst Length, and Wrap Sequence (Sequential & Interleave)

• Auto Refresh (CBR) and Self Refresh

• All inputs and outputs SSTL_2 compatible

• Re-drive for all input signals using register and PLL devices.

• Seria l Presence Detect with E2PROM

• Low Profile Modules form factor:

133.35 mm × 30,48 mm (1.2”) × 4.00 mm

(6,80 mm with stacked components)

• Based on JEDEC standard reference card layouts Raw Card L,M,N

• Gold plated contacts

1.2 Description

The HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B are low profile versions of the standard Registered DIMM

modules with 1.2” inch (30,48 mm) height for 1U Server Applications. The Low Profile DIMM versions are available

as 32M × 72 (256MB), 64M × 72 (512MB) and 128M × 72 (1 GB).

The memory array is designed with Double Data Rate Synchronous DRAMs for ECC applications. All control and

address signals are re-driven on the DIMM using register devices and a PLL for the clock distribution. This reduces

capacitive loading to the system bus, but adds one cycle to the SDRAM timing. A variety of decoupling capacitors

are mounted on the PC board. The DIMMs feature serial presence detect based on a serial E2PROM device using

the 2-pin I2C protocol. The first 128 bytes are programmed with configuration data and the second 128 bytes are

available to the customer.

Table 1 Performance

Part Number Speed Code –7F –7 –8 Unit

Module Speed Grade DDR266F DDR266A DDR200A –

Component Module PC2 100 PC2100 PC1600 –

max. Clo ck

Frequency @ CL = 2.5 fCK 143 143 125 MHz

@ CL = 2 fCK 133 133 100 MHz

HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B

Registered DDR SDRAM-Modules

Overview

Data Sheet 7 Rev. 1.03 2004-01

Note:All “product type” end with a place code designating the silicon-die revision. Reference information available

on request. Example: HYS72D32500GR-7-B, indicating rev. C dies are used for SDRAM components. The

“compliance code” is printed on the module labe ls describing the speed so rt (for example “PC2100”), the

latencies and SPD code definition (for example “20330” means CAS latency of 2.0 clocks, RCD1) latency of

3 clocks, Row Precharge latency of 3 clocks, and JEDEC SPD code definiton version 0), and the Raw Card

used for this module.

Table 2 Ordering Information

Product Type Compliance Code Description SDRAM

Technology

PC2100 (CL = 2):

HYS72D32500GR-7F-B PC2100R-20220-L one rank 256 MB Registered DIMM 256 Mbit (x8)

HYS72D32500GR-7-B PC2100R-20330-L one rank 256 MB Registered DIMM 256 Mbit (x8)

HYS72D64500GR-7F-B PC2100R-20220-M one rank 512 MB Registered DIMM 256 Mbit (x4)

HYS72D64500GR-7-B PC2100R-20330-M one rank 512 MB Registered DIMM 256 Mbit (x4)

HYS72D128520GR-7F-B PC2100R-20220-N two ranks 1 GByte Registered DIMM 256 MBit (x4)

(stacked with

soldering process)

HYS72D128520GR-7-B PC2100R-20330-N two ranks 1 GByte Registered DIMM 256 MBit (x4)

(stacked with

soldering process)

HYS72D128521GR-7F-B PC2100R-20220-N two ranks 1 GByte Registered DIMM 256 MBit (x4)

(stacked with laser

welding process)

HYS72D128521GR-7-B PC2100R-20330-N two ranks 1 GByte Registered DIMM 256 MBit (x4)

(stacked with laser

welding process)

PC1600 (CL = 2):

HYS72D32500GR-8-B PC1600R-20220-L one rank 256 MB Registered DIMM 256 Mbit (x8)

HYS72D64500GR-8-B PC1600R-20220-M one rank 512 MB Registered DIMM 256 Mbit (x4)

HYS72D128521GR-8-B PC1600R-20220-M two ranks 1GByte Registered DIMM 256Mbit (x4)

(stacked with laser

welding process)

1) RCD: Row-Column-Delay

HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B

Registered DDR SDRAM-Modules

Pin Configuration

Data Sheet 8 Rev. 1.03 2004-01

2 Pin Configuration

*) for detailed description of the Power Up and Power Management on DDR Registered DIMMs see the Application Note at the

end of this datasheet

Table 3 Pin Definitions and Functions

Symbol Type Function

A0 – A11, A12 Input Address Inputs (A12 for 256 MB & 512 MB based modules)

BA0, BA1 Input Bank Selects

DQ0 – DQ63 Input/Output Data Input/Output

CB0 – CB7 Input/Output Check Bits (×72 organizati on only )

RAS Input Row Address Strobe

CAS Input Column Address Strobe

WE Input Read/Write Input

CKE0, CKE1 Input Clock Enable

DQS0 – DQS8 Input/Output SDRAM low data strobes

CK0, CK0 Input Differential Clock Input

DM0 – DM8 Input SDRAM low data mask

DQS9 – DQS17 Input/Output high data strobes

CS0, CS1 Input Chip Selects

VDD Supply Power (+2.5 V)

VSS Supply Ground

VDDQ Supply I/O Driver power supply

VDDID Output VDD Indentification flag

VDDSPD Supply EEPROM power supply

VREF Supply I/O reference supply

SCL Input Serial bus clock

SDA Output Serial bus data line

SA0 – SA2 Input slave add re ss sele ct

NC Input no connect

DU Input don’t use

RESET Input Reset pin (forces register inputs low) *)

HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B

Registered DDR SDRAM-Modules

Pin Configuration

Data Sheet 9 Rev. 1.03 2004-01

Table 4 Address Format

Density Organization Memory

Ranks SDRAMs # of

SDRAMs # of

row/rank/

columns

bits

Refresh Period Interval

256 MB 32M x 72 1 256Mbit

32M ×89 13 / 2 / 10 8K 64 ms 7.8 µs

512 MB 64M ×72 1 256Mbit

64M ×418 13 / 2 / 11 8K 64 ms 7.8 µs

1GB 128M×72 2 256Mbit

64M ×436 (stacked) 13 / 2 / 11 8K 64 ms 7.8 µs

Table 5 Pin Configuration

PIN# Symbol PIN# Symbol PIN# Symbol PIN# Symbol

1VREF 48 A0 94 DQ4 141 A10

2 DQ0 49 CB2 95 DQ5 142 CB6

3VSS 50 VSS 96 VDDQ 143 VDDQ

4 DQ1 51 CB3 97 DM0/DQS9 144 CB7

5 DQ0 52 BA1 98 DQ6 KEY

6DQ2 KEY 99 DQ7 145 VSS

7VDD 53 DQ32 100 VSS 146 DQ36

8DQ3 54

VDDQ 101 NC 147 DQ37

9 NC 55 DQ33 102 NC 148 VDD

10 RESET 56 DQS4 103 NC 149 DM4/DQS13

11 VSS 57 DQ34 104 VDDQ 150 DQ38

12 DQ8 58 VSS 105 DQ12 151 DQ39

13 DQ9 59 BA0 106 DQ13 152 VSS

14 DQS1 60 DQ35 107 DM1/DQS10 153 DQ44

15 VDDQ 61 DQ40 108 VDD 154 RAS

16 DU 62 VDDQ 109 DQ14 155 DQ45

17 DU 63 WE 110 DQ15 156 VDDQ

18 VSS 64 DQ41 111 CKE1 157 CS0

19 DQ10 65 CAS 112 VDDQ 158 CS1

20 DQ11 66 VSS 113 NC 159 DM5/DQS14

21 CKE0 67 DQS5 114 DQ20 160 VSS

22 VDDQ 68 DQ42 115 NC / A12 161 DQ46

23 DQ16 69 DQ43 116 VSS 162 DQ47

24 DQ17 70 VDD 117 DQ21 163 NC

25 DQS2 71 NC 118 A11 164 VDDQ

26 VSS 72 DQ48 119 DM2/DQS11 165 DQ52

27 A9 73 DQ49 120 VDD 166 DQ53

28 DQ18 74 VSS 121 DQ22 167 NC

29 A7 75 DU 122 A8 168 VDD

30 VDDQ 76 DU 123 DQ23 169 DM6/DQS15

HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B

Registered DDR SDRAM-Modules

Pin Configuration

Data Sheet 10 Rev. 1.03 2004-01

Note:A12 is used for 256Mbit and 512Mbit based modules only

31 DQ19 77 VDDQ 124 VSS 170 DQ54

32 A5 78 DQS6 125 A6 171 DQ55

33 DQ24 79 DQ50 126 DQ28 172 VDDQ

34 VSS 80 DQ51 127 DQ29 173 NC

35 DQ25 81 VSS 128 VDDQ 174 DQ60

36 DQS3 82 VDDID 129 DM3/DQS12 175 DQ61

37 A4 83 DQ56 130 A3 176 VSS

38 VDD 84 DQ57 131 DQ30 177 DM7/DQS16

39 DQ26 85 VDD 132 VSS 178 DQ62

40 DQ27 86 DQS7 133 DQ31 179 DQ63

41 A2 87 DQ58 134 CB4 180 VDDQ

42 VSS 88 DQ59 135 CB5 181 SA0

43 A1 89 VSS 136 VDDQ 182 SA1

44 CB0 90 NC 137 CK0 183 SA2

45 CB1 91 SDA 138 CK0 184 VDDSPD

46 VDD 92 SCL 139 VSS ––

47 DQS8 93 VSS 140 DM8/DQS17 – –

Table 5 Pin Configuration (cont’d)

PIN# Symbol PIN# Symbol PIN# Symbol PIN# Symbol

HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B

Registered DDR SDRAM-Modules

Pin Configuration

Data Sheet 11 Rev. 1.03 2004-01

Figure 1 Block Diagram: One Rank 32M ×72 DDR SDRAM DIMM Module (×8 components)

HYS72D32500GR on Raw Card L

PCK

DQ4

DQ5

DQ6

DQ7

DQ0

DQ1

DQ2

DQ3

I/O 0

I/O 1

I/O 2

I/O 3

I/O 4

I/O 5

I/O 6

I/O 7

DQ12

DQ13

DQ14

DQ8

DQ9

DQ10

DQ11

DQ20

DQ21

DQ22

DQ23

DQ16

DQ17

DQ18

DQ19

DQ28

DQ29

DQ30

DQ31

DQ24

DQ25

DQ26

DQ27

DQ36

DQ37

DQ38

DQ39

DQ32

DQ33

DQ34

DQ35

DQ44

DQ45

DQ46

DQ47

DQ40

DQ41

DQ42

DQ43

DQ52

DQ53

DQ54

DQ55

DQ48

DQ49

DQ50

DQ51

DQ60

DQ61

DQ62

DQ63

DQ56

DQ57

DQ58

DQ59

RS0

DQS0

DQS

DQS4

DQS1 DQS5

DQS

DQS2

DQS

DQS3

DQS

DQS6

DQS7

DQ15

CB4

CB5

CB6

CB7

CB0

CB1

CB2

CB3

DQS8

DQS

VDD

VSS

D0-D8

VDDQ D0- D8

D0-D8

VREF

Notes:

1. DQ-to-I/O wiring may be changed within a byte.

2. DQ/DQS/DM/CKE/S relationships must be main-

tained as shown.

3. DQ/DQS resistors should be 22 Ohms.

4. VDDID strap connections (for memory device VDD,

DDQ

STRAP OUT (OPEN): VDD = VDDQ

STRAP IN (VSS): VDD ≠ VDDQ.

5. SDRAM placement alternates between the back

and front sides of the DIMM.

6. Address and control resistors should be 22 Ohms.

7. A13 is not wired for raw card A.

VDDID Strap: see Note 4

CK0, CK0 --------- PLL*

* Wire per Clock Loading Table/Wiring Diagrams

S0 RS0 -> CS: SDRAMs D0-D8

BA0-BA1 RBA0-RBA1 -> BA0-BA1: SDRAMs D0-D8

A0-An7RA0-RAn7 -> A0-An7: SDRAMs D0-D8

RAS RRAS -> RAS: SDRAMs D0-D8

CAS RCAS -> CAS: SDRAMs D0-D8

CKE0 RCKE0 -> CKE: SDRAMs D0- D8

WE RWE -> WE: SDRAMs D0-D8

RESET

DM4/DQS13

DM0/DQS9

DM5/DQS14

I/O 0

I/O 1

I/O 2

I/O 3

I/O 4

I/O 5

I/O 6

I/O 7

I/O 0

I/O 1

I/O 2

I/O 3

I/O 4

I/O 5

I/O 6

I/O 7

I/O 0

I/O 1

I/O 2

I/O 3

I/O 4

I/O 5

I/O 6

I/O 7

I/O 0

I/O 1

I/O 2

I/O 3

I/O 4

I/O 5

I/O 6

I/O 7

I/O 0

I/O 1

I/O 2

I/O 3

I/O 4

I/O 5

I/O 6

I/O 7

I/O 0

I/O 1

I/O 2

I/O 3

I/O 4

I/O 5

I/O 6

I/O 7

I/O 0

I/O 1

I/O 2

I/O 3

I/O 4

I/O 5

I/O 6

I/O 7

DM1/DQS10

DM2/DQS11 DM6/DQS15

DM3/DQS12 DM7/DQS16

DM8/DQS17

I/O 0

I/O 1

I/O 2

I/O 3

I/O 4

I/O 5

I/O 6

I/O 7

VDDSPD Serial PD

Serial PD

A1 A2

SA0 SA1 SA2

SDA

SCL

HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B

Registered DDR SDRAM-Modules

Pin Configuration

Data Sheet 12 Rev. 1.03 2004-01

Figure 2 Block Diagram: One Rank 64M ×72 DDR SDRAM DIMM Module (×4 components)

HYS72D64500GR on Raw Card M

RS0

DQS4

DQS6

DQS2

DQ0

DQ1

DQ2

DQ3

DQ8

DQ9

DQ10

DQ11

DQ16

DQ17

DQ18

DQ19

DQ24

DQ25

DQ26

DQ27

DQ32

DQ33

DQ34

DQ35

DQ40

DQ41

DQ42

DQ43

DQ56

DQ57

DQ58

DQ59

DQS

DQS0

DQ48

DQ49

DQ50

DQ51

DQS

DQ4

DQ5

DQ6

DQ7

DQ12

DQ13

DQ14

DQ15

DQ20

DQ21

DQ22

DQ23

DQ28

DQ29

DQ30

DQ31

DQ36

DQ37

DQ38

DQ39

DQ44

DQ45

DQ46

DQ47

DQ60

DQ61

DQ62

DQ63

DQS

I/O 0

I/O 1

I/O 2

I/O 3

DQS

I/O 0

I/O 1

I/O 2

I/O 3

DQS

I/O 0

I/O 1

I/O 2

I/O 3

DQS

I/O 0

I/O 1

I/O 2

I/O 3

DQS

I/O 0

I/O 1

I/O 2

I/O 3

DQS

I/O 0

I/O 1

I/O 2

I/O 3

DQS

I/O 0

I/O 1

I/O 2

I/O 3

DQS9

D10

D11

D12

D13

D14

D16

DQ52

DQ53

DQ54

DQ55

DQS

I/O 0

I/O 1

I/O 2

I/O 3

D15

CB0

CB1

CB2

CB3

DQS

CB4

CB5

CB6

CB7

DQS

I/O 0

I/O 1

I/O 2

I/O 3

D17

VSS

DQS1

DQS3

DQS8

DQS5

DQS7

DQS15

DQS14

DQS13

DQS10

DQS11

DQS12

DQS16

DQS17

Notes:

1. DQ-to-I/O wiring may be changed

within a byte.

2. DQ/DQS/CKE/S relationships

must be maintained as shown.

3. DQ/DQS resistors should be 22

Ohms.

4. VDDID strap connections

(for memory device VDD, VDDQ):

STRAP OUT (OPEN): VDD = VDDQ

STRAP IN (VSS): VDD ≠ VDDQ.

5. Address and control resistors

should be 22 Ohms.

6. A13 is not wired for raw card B.

VDD

VSS

D0-D17

VDDQ D0-D17

D0-D17

VREF

VDDID Strap: see Note 4

CK0, CK0 --------- PLL*

* Wire per Clock Loading Table/Wiring Diagrams

BA0-BA1 RBA0-RBA1 -> BA0-BA1: SDRAMs D0-D17

A0-An6RA0-RAn6 -> A0-An6: SDRAMs D0-D17

RAS RRAS -> RAS: SDRAMs D0-D17

S0 RS0 -> CS : SDRAMs D0-D17

CAS RCAS -> CAS: SDRAMs D0-D17

CKE0 RCKE0A -> CKE: SDRAMs D0-D17

WE RWE -> WE: SDRAMs D0-D17

PCK

PCK RESET

I/O 0

I/O 1

I/O 2

I/O 3

I/O 0

I/O 1

I/O 2

I/O 3

I/O 0

I/O 1

I/O 2

I/O 3

I/O 0

I/O 1

I/O 2

I/O 3

I/O 0

I/O 1

I/O 2

I/O 3

I/O 0

I/O 1

I/O 2

I/O 3

I/O 0

I/O 1

I/O 2

I/O 3

I/O 0

I/O 1

I/O 2

I/O 3

I/O 0

I/O 1

I/O 2

I/O 3

DDSPD

Serial PD

A1 A2

SA0 SA1 SA2

SDA

SCL

HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B

Registered DDR SDRAM-Modules

Pin Configuration

Data Sheet 13 Rev. 1.03 2004-01

Figure 3 Block Diagram: Two Ranks 128M ×72 DDR SDRAM DIMM Modules (×4 components)

HYS72D128520GR on Raw Card N

PCK

RS0

DQS4

DQS6

DQS2

DQ0

DQ1

DQ2

DQ3

DQ8

DQ9

DQ10

DQ11

DQ16

DQ17

DQ18

DQ19

DQ24

DQ25

DQ26

DQ27

DQ32

DQ33

DQ34

DQ35

DQ40

DQ41

DQ42

DQ43

DQ56

DQ57

DQ58

DQ59

DQS

DQS0

DQ48

DQ49

DQ50

DQ51

DQS

DQ4

DQ5

DQ6

DQ7

DQ12

DQ13

DQ14

DQ15

DQ20

DQ21

DQ22

DQ23

DQ28

DQ29

DQ30

DQ31

DQ36

DQ37

DQ38

DQ39

DQ44

DQ45

DQ46

DQ47

DQ60

DQ61

DQ62

DQ63

DQS

I/O 0

I/O 1

I/O 2

I/O 3

DQS

I/O 0

I/O 1

I/O 2

I/O 3

DQS

I/O 0

I/O 1

I/O 2

I/O 3

DQS

I/O 0

I/O 1

I/O 2

I/O 3

DQS

I/O 0

I/O 1

I/O 2

I/O 3

DQS

I/O 0

I/O 1

I/O 2

I/O 3

DQS

I/O 0

I/O 1

I/O 2

I/O 3

DM0/DQS9

D10

D11

D12

D13

D14

D16

DQ52

DQ53

DQ54

DQ55

DQS

I/O 0

I/O 1

I/O 2

I/O 3

D15

CK0, CK0 --------- PLL*

S S

S1 RS1 -> S : SDRAMs D18-D35

BA0-BA1 RBA0-RBA1 -> BA0-BA1: SDRAMs D0-D35

A0-A13 RA0-RA13 -> A0-A13: SDRAMs D0- D35

RAS RRAS -> RAS: SDRAMs D0-D35

S0 RSO -> S : SDRAMs D0-D17

VSS

DQS1

DQS3

DQS5

DQS7

DM6/DQS15

DM5/DQS14

DM4/DQS13

DM1/DQS10

DM2/DQS11

DM3/DQS12

DM7/DQS16

* Wire per Clock Loading Table/Wiring Diagrams

VDD

VSS

D0-D35

VDDQ D0-D35

D0-D35

VREF

RS1

Notes:

1. DQ-to-I/O wiring may be changed within a byte.

2. DQ/DQS/DM/CKE/S relationships must be maintained as shown.

3. DQ/DQS resistors should be 22 Ohms.

4. VDDID strap connections (for memory device VDD, VDDQ):

STRAP OUT (OPEN): VDD = VDDQ

STRAP IN (VSS): VDD ≠ VDDQ.

5. Address and control resistors should be 22 Ohms.

6. Each Chip Select and CKE pair alternate between decks for ther-

mal enhancement.

VDDID Strap: see Note 4

CAS RCAS -> CAS: SDRAMs D0-D35

CKE0 RCKE0 -> CKE: SDRAMs D0-D17

WE RWE -> WE: SDRAMs D0-D35

DQS

I/O 3

I/O 2

I/O 1

I/O 0

D18

DQS

D19

D20

D21

D22

D23

D25

DQS

I/O 0

I/O 1

I/O 2

I/O 3

D27

DQS

I/O 0

I/O 1

I/O 2

I/O 3

DQS

I/O 0

I/O 1

I/O 2

I/O 3

DQS

I/O 0

I/O 1

I/O 2

I/O 3

DQS

I/O 0

I/O 1

I/O 2

I/O 3

DQS

I/O 0

I/O 1

I/O 2

I/O 3

DQS

I/O 0

I/O 1

I/O 2

I/O 3

D28

D29

D30

D31

D32

D34

DQS

I/O 0

I/O 1

I/O 2

I/O 3

D33

CB0

CB1

CB2

CB3

DQS

SDM

DQS8

DQS

D26

SDM

CB4

CB5

CB6

CB7

DQS

I/O 0

I/O 1

I/O 2

I/O 3

D17

SDM

DM8/DQS17

DQS

I/O 0

I/O 1

I/O 2

I/O 3

D35

SDM

RESET

CKE1 RCKE1 -> CKE: SDRAMs D18-D35

I/O 0

I/O 1

I/O 2

I/O 3

I/O 0

I/O 1

I/O 2

I/O 3

I/O 0

I/O 1

I/O 2

I/O 3

I/O 0

I/O 1

I/O 2

I/O 3

I/O 0

I/O 1

I/O 2

I/O 3

I/O 0

I/O 1

I/O 2

I/O 3

I/O 0

I/O 1

I/O 2

I/O 3

I/O 0

I/O 1

I/O 2

I/O 3

I/O 0

I/O 1

I/O 2

I/O 3

I/O 0

I/O 1

I/O 2

I/O 3

I/O 0

I/O 1

I/O 2

I/O 3

I/O 0

I/O 1

I/O 2

I/O 3

I/O 0

I/O 1

I/O 2

I/O 3

I/O 0

I/O 1

I/O 2

I/O 3

I/O 0

I/O 1

I/O 2

I/O 3

I/O 0

I/O 1

I/O 2

I/O 3

I/O 0

I/O 1

I/O 2

I/O 3

DDSPD

Serial PD

A1 A2

SA0 SA1 SA2

SDA

SCL

HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B

Registered DDR SDRAM-Modules

Electrical Characteristics

Data Sheet 14 Rev. 1.03 2004-01

3 Electrical Characteristics

3.1 Operating Conditions

Attention: Permanent device damage may occur if “Absolute Maximum Ratings” are exceeded. Functional

operation should be restri cted to recommended opera tion conditions. Exposure to high er than

recommended voltage for extended periods of time affect device reliability

Note:

1. Under all conditions, VDDQ must be less than or equal to VDD

2. Peak to peak AC noise on VREF may not exceed ± 2% VREF (DC).

VREF is also expected to track no i se variations in VDDQ.

3. VTT of the transmitting device must track VREF of the receiving device

Note:

1. The relationship between the VDDQ of the driving device and the VREF of the receiving device is what determines

noise mar gins. Howe ver, in the cas e of VIH (max.) (input overdrive), it is the VDDQ of the recei v ing dev ice tha t is

referenced. In the case where a device is implemented such that it supports SSTL_2 inputs but has no SSTL_2

outputs (such as a translator), and therefore no VDDQ supply voltage connection, inputs must tolerate input

overdrive to 3.0 V (High corner VDDQ + 300 mV).

2. For any pin under test input of 0 V

≤

VIN

≤

VDDQ + 0.3 V. Values are shown per DDR-SDRAM component

Table 6 Absolute Maximum Ratings

Parameter Symbol Values Unit

min. max.

Input/Output voltage relative to VSS VIN, VOUT –0.5 3.6 V

Power supply voltage on VDD/VDDQ to VSS VDD, VDDQ –0.5 3.6 V

Storage temperature range TSTG –55 +150 oC

Power dissipation (per SDRAM component) PD–1W

Data out current (short circuit) IOS –50mA

Table 7 Supply Voltage Levels

Parameter Symbol Values Unit/

Notes

min. nom. max.

Device Supply Voltage VDD 2.3 2.5 2.7 V

Output Supply Voltage VDDQ 2.3 2.5 2.7 V 1)

Input Reference Voltage VREF 0.49 ×VDDQ 0.5 ×VDDQ 0.51 ×VDDQ V 2)

Termination Voltage VTT VREF –0.04 VREF VREF + 0.04 V 3)

EEPROM supply voltage VDDSPD 2.3 2.5 3.6 V

Table 8 DC Operating Conditions (SSTL_2 Inputs)

(VDDQ =2.5V, TA=70°C, Voltage Referenced to VSS)

Parameter Symbol Values Unit/

Notes

min. max.

DC Input Logic High VIH, (DC) VREF +0.15 VDDQ +0.3 V 1)

DC Input Logic Low VIL, (DC) –0.30 VREF –0.15 V

Input Leakage Current IIL –5 5 µA 1)

Output Leakage Current IOL –5 5 µA 2)

HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B

Registered DDR SDRAM-Modules

Electrical Characteristics

Data Sheet 15 Rev. 1.03 2004-01

3.2 Current Specification and Conditions

Table 9 IDD Conditions

Parameter Symbol

Operating Current 0

one bank; active/ precharge; DQ, DM, and DQS inputs changing once per clock cycle;

address and control inputs changing once every two clock cycles.

IDD0

Operating Current 1

one bank; active/read/precharge; Burst Length = 4; see component data sheet. IDD1

Precharge Power-Down Standby Current

all banks idle; power-down mode; CKE ≤ VIL,MAX

IDD2P

Precharge Floating Standby Current

CS ≥ VIH,,MIN, all banks idle; CKE ≥ VIH,MIN;

address and other control inputs changing once per clock cycle; VIN = VREF for DQ, DQS and DM.

IDD2F

Precharge Quiet Standby Current

CS ≥ VIHMIN, all banks idle; CKE ≥VIH,MIN; VIN = VREF for DQ, DQS and DM;

address and other control inputs stable at ≥ VIH,MIN or ≤ VIL,MAX.

IDD2Q

Active Power-Down Standby Current

one bank active; power-down mode; CKE ≤ VILMAX; VIN = VREF for DQ, DQS and DM. IDD3P

Act ive Standby Current

one bank active; CS ≥ VIH,MIN; CKE ≥ VIH,MIN; tRC =tRAS,MAX;

DQ, DM and DQS inputs changing twice per clock cycle;

address and control inputs changing once per clock cycle.

IDD3N

Operati ng Curre n t Read

one bank active; Burst Length = 2; reads; continuous burst;

address and control inputs changing once per clock cycle;

50% of data outputs changing on every clock edge;

CL = 2 for DDR266(A), CL = 3 for DDR333 and DDR400B; IOUT =0mA

IDD4R

Operating Current Write

one bank active; Burst Length = 2; writes; continuous burst;

address and control inputs changing once per clock cycle;

50% of data outputs changing on every clock edge;

CL = 2 for DDR266(A), CL = 3 for DDR333 and DDR400B

IDD4W

Auto-Re fres h Curre n t

tRC = tRFCMIN, burst refresh IDD5

Self-Refresh Current

CKE ≤ 0.2 V; external clock on IDD6

Operating Current 7

four bank interleaving with Burst Length = 4; see component data sheet. IDD7

 
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B
Registered  DDR SDRAM-Modules
Electrical Characteristics
Data Sheet 16 Rev. 1.03 2004-01
 
Table 10 IDD Specifications –7F/–7
Product Type & Orga nisation
HYS72D32500GR–7F–B
HYS72D64500GR–7F–B
HYS72D128521GR–7F–B
HYS72D128520GR–7F–B
HYS72D32500GR–7–B
HYS72D64500GR–7–B
HYS72D128520GR–7–B
HYS72D128521GR–7–B
Unit Note/ Test 
Conditions5)
256 MB 512 MB 1 GByte 1 GByte 256 MB 512 MB 1 GByte 1 GByte
×72 ×72 ×72 ×72 ×72 ×72 ×72 ×72
1 Rank 1 Rank 2 Ranks 2 Ranks 1 Rank 1 Rank 2 Ranks 2 Ranks
–7F –7F –7F –7F –7–7–7–7
max. max. max. max. max. max. max. max.
IDD0 990 1980 2970 2970 900 1800 2790 2790 mA 1)4)
1) The module IDD values are calculated from the component IDD datasheet values are: 
n*IDD×[component] for single bank modules (n: number of components per module bank)
n*IDD×[component] + n*IDD3N[component] for two bank modules (n: number of components per module bank)
IDD1 1080 2160 3150 3150 990 1980 2970 2970 mA 1)3)4)
IDD2P 72 144 288 288 72 144 288 288 mA 2)4)
2) The module IDD values are calculated from the component IDD datasheet values are: 
n*IDD×[component] for single bank modules (n: number of components per module bank)
2*n*IDD×[component] for single two bank modules (n: number of components per module bank)
IDD2F 360 720 1440 1440 360 720 1440 1440 mA 2)4)
IDD2Q 225 450 900 900 225 450 900 900 mA 2)4)
IDD3P 162 324 648 648 162 324 648 648 mA 2)4)
IDD3N 495 990 1980 1980 495 990 1980 1980 mA 2)4)
IDD4R 1035 2070 3060 3060 1035 2070 3060 3060 mA 1)3)4)
3) DQ I/O (IDDQ) currents are not in cluded into c alculations : module IDD values will be mea sured differen tly depending  on load
conditions
IDD4W 1125 2250 3240 3240 1125 2250 3240 3240 mA 1)4)
IDD5 1620 3240 4230 4230 1620 3240 4230 4230 mA 1)4)
4) DRAM component currents only: module IDD will be measured differently depending upon register and PLL operation
currents
IDD6 23 45 90 90 23 45 90 90 mA 2)4)
IDD7 2025 4050 5040 5040 2025 4050 5040 5040 mA 1)3)4)5)
5) Test condition for maximum values: VDD =2.7V, TA=10°C

 
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B
Registered  DDR SDRAM-Modules
Electrical Characteristics
Data Sheet 17 Rev. 1.03 2004-01
 
Table 11 IDD Specifications –8
Product Type & Orga nisation
HYS72D32500GR–8–B
HYS72D64500GR–8–B
HYS72D128521GR–8–B
Unit Not e/ Test 
Conditions5)
256 MB 512 MB 1 GByte
×72 ×72 ×72
1 Rank 1 Rank 2 Ranks
–8–8–8
max. max. max.
IDD0 810 1620 2430 mA 1)4)
1) The module IDD values are calculated from the component IDD datasheet values are: 
n*IDD×[component] for single bank modules (n: number of components per module bank)
n*IDD×[component] + n*IDD3N[component] for two bank modules (n: number of components per module bank)
IDD1 900 1800 2610 mA 1)3)4)
IDD2P 63 126 252 mA 2)4)
2) The module IDD values are calculated from the component IDD datasheet values are: 
n*IDD×[component] for single bank modules (n: number of components per module bank)
2*n*IDD×[component] for single two bank modules (n: number of components per module bank)
IDD2F 315 630 1260 mA 2)4)
IDD2Q 198 396 792 mA 2)4)
IDD3P 144 288 576 mA 2)4)
IDD3N 405 810 1620 mA 2)4)
IDD4R 855 1710 2520 mA 1)3)4)
3) DQ I/O (IDDQ) currents ar e not includ ed into calculatio ns: module IDD va lues will be  measu red different ly depending on  load
conditions
IDD4W 945 1890 2700 mA 1)4)
IDD5 1530 3060 3870 mA 1)4)
4) DRAM component currents only: module IDD will be measured differently depending upon register and PLL operation
currents
IDD6 22,5 45 90 mA 2)4)
IDD7 1890 3780 4590 mA 1)3)4)5)
5) Test condition for maximum values: VDD =2.7V, TA=10°C

 
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B
Registered  DDR SDRAM-Modules
Electrical Characteristics
Data Sheet 18 Rev. 1.03 2004-01
 
3.3 AC Characteristics
Table 12 AC Timing - Absolute Specifications –8/–7/-7F
Parameter Symbol –8 –7 –7F Unit Note/
Test
Condition 1)
DDR200 DDR266A DDR266F
Min. Max. Min. Max. Min. Max.
DQ output access time from 
CK/CK tAC –0.8 +0.8 –0.75 +0.75 –
0.75 +0.75 ns 2)3)4)5)
DQS output access time from 
CK/CK tDQSCK –0.8 +0.8 –0.75 +0.75 –
0.75 +0.75 ns 2)3)4)5)
CK high-level width tCH 0.45 0.55 0.45 0.55 0.45 0.55 tCK 2)3)4)5)
CK low-level width tCL 0.45 0.55 0.45 0.55 0.45 0.55 tCK 2)3)4)5)
Clock Half Period tHP min. (tCL, tCH)min. (tCL, tCH)min. (tCL, tCH)ns 2)3)4)5)
Clock  cycle t ime tCK2.5 8 12 7 12 7 12 ns CL = 2.5 2)3)4)5)
tCK2 10 12 7.5 12 7.5 12 ns CL = 2.0 2)3)4)5)
DQ and DM input hold time tDH 0.6 — 0.5 — 0.5 — ns 2)3)4)5)
DQ and DM input setup time tDS 0.6 — 0.5 — 0.5 — ns 2)3)4)5)
Control and Ad dr . input pul se  
width (each input ) tIPW 2.5 — 2.2 — 2.2 — ns 2)3)4)5)6)
DQ and DM input pulse width 
(each input) tDIPW 2.0 — 1.75 — 1.75 — ns 2)3)4)5)6)
Data-out hig h- impeda nc e time  
from CK/CK tHZ –0.8 +0.8 –0.75 +0.75 –
0.75 +0.75 ns 2)3)4)5)7)
Data-out low- impe dance time 
from CK/CK tLZ –0.8 +0.8 –0.75 +0.75 –
0.75 +0.75 ns 2)3)4)5)7)
Write command to 1st DQS 
latching transition tDQSS 0.75 1.25 0.75 1.25 0.75 1.25 tCK 2)3)4)5)
DQS-DQ skew (DQS and 
associated DQ signals) tDQSQ —+0.6 — +0.5 —+0.5 ns2)3)4)5)
ns
Data hold skew factor tQHS — 1.0 — 0.75 — 0.75 ns 2)3)4)5)
ns
DQ/DQS output hold time tQH tHP –
tQHS
—tHP –
tQHS
—tHP –
tQHS
—ns
2)3)4)5)
DQS input low (high) pulse 
width (write cycle) tDQSL,H 0.35 — 0.35 — 0.35 — tCK 2)3)4)5)
DQS falling edge to CK setup 
time (write cycle) tDSS 0.2 — 0.2 — 0.2 — tCK 2)3)4)5)
DQS falling edge hold time from 
CK (write cycle) tDSH 0.2 — 0.2 — 0.2 — tCK 2)3)4)5)
Mode register set command 
cycl e time tMRD 2— 2 — 2— tCK 2)3)4)5)
Write preamble setup time tWPRES 0— 0 — 0— ns
2)3)4)5)8)
Write postamble tWPST 0.40 0.60 0.40 0.60 0.40 0.60 tCK 2)3)4)5)9)
Write pr eamble tWPRE 0.25 — 0.25 — 0.25 — tCK 2)3)4)5)

 
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B
Registered  DDR SDRAM-Modules
Electrical Characteristics
Data Sheet 19 Rev. 1.03 2004-01
 
Address and control input setup 
time tIS 1.1 — 0.9 — 0.9 — ns fast slew rate
3)4)5)6)10)
1.1 — 1.0 — 1.0 — ns slow slew rate
3)4)5)6)10)
Address and control input hold 
time tIH 1.1 — 0.9 — 0.9 — ns fast slew rate
3)4)5)6)10)
1.1 — 1.0 — 1.0 — ns slow slew rate
3)4)5)6)10)
Read preamble tRPRE 0.9 1.1 0.9 1.1 0.9 1.1 tCK CL > 1.5 2)3)4)5)
Read preamble setup time tRPRES 1.5 — NA NA — tCK 2)3)4)5)11)
Read postamble tRPST 0.40 0.60 0.40 0.60 0.40 0.60 ns 2)3)4)5)
Active to Precharge command tRAS 50 120E+3 45 120E+3 45 120E+3 tCK 2)3)4)5)
Active to Active/Auto-refresh 
command period tRC 70 — 65 — 65 — ns 2)3)4)5)
Auto-refresh to Active/Auto-
refresh command period tRFC 80 — 75 — 75 — ns 2)3)4)5)
Active to Read or Write delay tRCD 20 — 20 — 20 — ns 2)3)4)5)
Precharge command period tRP 20 — 20 — 20 — ns 2)3)4)5)
Active to Autoprecharge delay tRAP 20 — 20 — 20 — ns 2)3)4)5)
Active bank A to Active bank B 
command tRRD 15 — 15 — 15 — ns 2)3)4)5)
Write recovery time tWR 15 — 15 — 15 — ns 2)3)4)5)
Auto precharge write recovery + 
precharge time tDAL (twr/tCK) + (trp/tCK)tCK 2)3)4)5)12)
Internal write to read command 
delay tWTR 1— 1 — 1— tCK CL > 1.5 2)3)4)5)
Exit self-refresh to non-read 
command tXSNR 80 — 75 — 75 — ns 2)3)4)5)
Exit self-refresh to read 
command tXSRD 200 — 200 — 200 — tCK 2)3)4)5)
Average Periodic Refresh 
Interval tREFI — 7.8 — 7.8 — 7.8 µs2)3)4)5)13)
1) 0 °C ≤ TA ≤ 70 °C; VDDQ = 2.5 V ± 0.2 V, VDD = +2.5 V ± 0.2 V
2) Input slew rate ≥ 1 V/ns for DDR266a, DDR266F and = 1 V/ns for DDR200
3) The CK/CK input re ferenc e level  (for t iming  refere nce t o CK/ CK) is  the po int a t whic h CK  and  CK c ross:  the i nput r eferenc e
level for signals other than CK/CK, is VREF. CK/CK slew rate are ≥ 1.0 V/ns.
4) Inputs are not recognized as valid until VREF stabilizes.
5) The Output tim ing reference le vel, as measured at  the timing referenc e point indica ted in AC Characteris tics (note 3) is VTT.
6) These parameters guarantee device timing, but they are not necessarily tested on each device.
7) tHZ and tLZ transitions occ ur i n the  sa me  ac ces s  tim e win dow s  as valid dat a tran sitions . The se  para me ters  are n ot re ferre d
to a specific voltage level, but specify when the device is no longer driving (HZ), or begins driving (LZ).
Table 12 AC Timing - Absolute Specifications –8/–7/-7F
Parameter Symbol –8 –7 –7F Unit Note/
Test
Condition 1)
DDR200 DDR266A DDR266F
Min. Max. Min. Max. Min. Max.

HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B

Registered DDR SDRAM-Modules

Electrical Characteristics

Data Sheet 20 Rev. 1.03 2004-01

8) The specific requirement is that DQS be valid (HIGH, LOW, or some point on a valid transition) on or before this CK edge.

A valid transition is defined as monotonic and meeting the input slew rate specifications of the device. When no writes

were previously in progress on the bus, DQS will be transitioning from Hi-Z to logic LOW. If a previous write was in

progress, DQS could be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on tDQSS.

9) The maximu m limit for th is paramet er is not a device limit. The de vice operates with a greater va lue for this param eter, but

system performance (bus turnaround) degrades accordingly.

10) Fast slew rate ≥ 1.0 V/ ns , slow slew rate ≥ 0.5 V/ns and < 1 V/ns for c ommand/ad dress and C K & CK s lew rate > 1.0 V/ns,

measured between VOH(ac) and VOL(ac).

11) tRPRES is defined for CL = 1.5 operation only

12) For each of the terms, if not already an integer, round to the next highest integer. tCK is equal to the actual system clock

cycle time.

13) A maximum of eight Autorefresh commands can be posted to any given DDR SDRAM device.

HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B

Registered DDR SDRAM-Modules

SPD Contents

Data Sheet 21 Rev. 1.03 2004-01

4 SPD Contents

Table 13 SPD Codes for HYS72D32500GR–[7F/7/8]-B

Product Type & Organization

HYS72D32500GR–8–B

HYS72D32500GR–7–B

HYS72D32500GR–7F–B

×72 ×72 ×72

1 rank 1 rank 1 rank

reg reg reg

Label Code PC1600R –

20220 PC2100R –

20330 PC2100R –

20220

Jedec SPD Revision Rev. 0.0 Rev. 0.0 Rev. 0.0

Byte# Description HEX HEX HEX

0 Programmed SPD Bytes in E2PROM 80 80 80

1 Total number of Bytes in E2PROM 08 08 08

2 Memory Type (DDR = 07h) 07 07 07

3 Number of Row Addresses 0D 0D 0D

4 Number of Column Addresses 0A 0A 0A

5 Number of DIMM Ranks 01 01 01

6 Data Width (LSB ) 48 48 48

7 Data Width (MSB ) 00 00 00

8 Interface Voltage Levels 04 04 04

9 tCK @ CLmax (Byte 18) [ns] 80 70 70

10 tAC SDRAM @ CLmax (Byte 18) [ns] 80 75 75

11 Error Correction Support 02 02 02

12 Refresh Rate 82 82 82

13 Primary SDRAM Width 08 08 08

14 Error Checking SDRA M Width 08 08 08

15 tCCD [cycles] 01 01 01

16 Burst Length Supported 0E 0E 0E

17 Number of Banks on SDRAM Device 04 04 04

18 CAS Latency 0C 0C 0C

19 CS Latency 01 01 01

20 Write Latency 02 02 02

21 DIMM Attributes 26 26 26

22 Component Attributes C0 C0 C0

23 tCK @ CLmax -0.5 (Byte 18) [ns] A0 75 75

24 tAC SDRAM @ CLmax -0.5 [ns] 80 75 75

25 tCK @ CLmax -1 (Byte 18) [ns] 00 00 00

HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B

Registered DDR SDRAM-Modules

SPD Contents

Data Sheet 22 Rev. 1.03 2004-01

26 tAC SDRAM @ CLmax -1 [ns] 00 00 00

27 tRPmin [ns] 50 50 3C

28 tRRDmin [ns] 3C 3C 3C

29 tRCDmin [ns] 50 50 3C

30 tRASmin [ns] 32 2D 2D

31 Module Density per Rank 40 40 40

32 tAS, tCS [ns] B0 90 90

33 tAH, TCH [ns] B0 90 90

34 tDS [ns] 60 50 50

35 tDH [ns] 60 50 50

36-40 not used 00 00 00

41 tRCmin [ns] 46 41 3C

42 tRFCmin [ns] 50 4B 4B

43 tCKmax [ns] 30 30 30

44 tDQSQmax [ns] 3C 32 32

45 tQHSmax [ns] A0 75 75

46 not used 00 00 00

47 DIMM PCB Height 00 00 00

48-61 not used 00 00 00

62 SPD Revision 00 00 00

63 Checksum of Byte 0-62 BF CA 9D

64 JEDEC ID Code of Infineon (1) C1 C1 C1

65 JEDEC ID Code of Infineon (2) 49 49 49

66 JEDEC ID Code of Infineon (3) 4E 4E 4E

67 JEDEC ID Code of Infineon (4) 46 46 46

68 JEDEC ID Code of Infineon (5) 49 49 49

69 JEDEC ID Code of Infineon (6) 4E 4E 4E

Table 13 SPD Codes for HYS72D32500GR–[7F/7/8]-B

Product Type & Organization

HYS72D32500GR–8–B

HYS72D32500GR–7–B

HYS72D32500GR–7F–B

×72 ×72 ×72

1 rank 1 rank 1 rank

reg reg reg

Label Code PC1600R –

20220 PC2100R –

20330 PC2100R –

20220

Jedec SPD Revision Rev. 0.0 Rev. 0.0 Rev. 0.0

Byte# Description HEX HEX HEX

HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B

Registered DDR SDRAM-Modules

SPD Contents

Data Sheet 23 Rev. 1.03 2004-01

70 JEDEC ID Code of Infineon (7) 45 45 45

71 JEDEC ID Code of Infineon (8) 4F 4F 4F

72 Module Manufacturer Location xx xx xx

73 Part Number, Char 1 37 37 37

74 Part Number, Char 2 32 32 32

75 Part Number, Char 3 44 44 44

76 Part Number, Char 4 33 33 33

77 Part Number, Char 5 32 32 32

78 Part Number, Char 6 35 35 35

79 Part Number, Char 7 30 30 30

80 Part Number, Char 8 30 30 30

81 Part Number, Char 9 47 47 47

82 Part Number, Char 10 52 52 52

83 Part Number, Char 11 38 37 37

84 Part Number, Char 12 42 42 46

85 Part Number, Char 13 20 20 42

86 Part Number, Char 14 20 20 20

87 Part Number, Char 15 20 20 20

88 Part Number, Char 16 20 20 20

89 Part Number, Char 17 20 20 20

90 Part Number, Char 18 20 20 20

91 Module Revision Cod e xx xx xx

92 Test Program Revision Code xx xx xx

93 Module Manufacturing Date Y ear xx xx xx

94 Module Manufacturing Date W eek xx xx xx

95 Module Serial Number (1) xx xx xx

96 Module Serial Number (2) xx xx xx

Table 13 SPD Codes for HYS72D32500GR–[7F/7/8]-B

Product Type & Organization

HYS72D32500GR–8–B

HYS72D32500GR–7–B

HYS72D32500GR–7F–B

×72 ×72 ×72

1 rank 1 rank 1 rank

reg reg reg

Label Code PC1600R –

20220 PC2100R –

20330 PC2100R –

20220

Jedec SPD Revision Rev. 0.0 Rev. 0.0 Rev. 0.0

Byte# Description HEX HEX HEX

HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B

Registered DDR SDRAM-Modules

SPD Contents

Data Sheet 24 Rev. 1.03 2004-01

97 Module Serial Number (3) xx xx xx

98 Module Serial Number (4) xx xx xx

99-127 not used 00 00 00

Table 14 SPD Codes for HYS72D64500GR–[7F/7/8]–B

Product Type & Organiza tion

HYS72D64500GR–7F–B

HYS72D64500GR–7–B

HYS72D64500GR–8–B

×72 ×72 ×72

1 rank 1 rank 1 rank

reg reg reg

Label Code PC2100R –

20220 PC2100R –

20330 PC1600R –

20220

Jedec SPD Revision Rev. 0.0 Rev. 0.0 Rev. 0.0

Byte# Description HEX HEX HEX

0 Programmed SPD Bytes in E2PROM 80 80 80

1 Total number of Bytes in E2PROM 08 08 08

2 Memory Type (DDR = 07h) 07 07 07

3 Number of Row Addresses 0D 0D 0D

4 Number of Column Add ress es 0B 0B 0B

5 Number of DIMM Ranks 01 01 01

Table 13 SPD Codes for HYS72D32500GR–[7F/7/8]-B

Product Type & Organization

HYS72D32500GR–8–B

HYS72D32500GR–7–B

HYS72D32500GR–7F–B

×72 ×72 ×72

1 rank 1 rank 1 rank

reg reg reg

Label Code PC1600R –

20220 PC2100R –

20330 PC2100R –

20220

Jedec SPD Revision Rev. 0.0 Rev. 0.0 Rev. 0.0

Byte# Description HEX HEX HEX

HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B

Registered DDR SDRAM-Modules

SPD Contents

Data Sheet 25 Rev. 1.03 2004-01

6 Data Width (LSB) 48 48 48

7 Data Width (MSB) 00 00 00

8 Interface Voltage Levels 04 04 04

9 tCK @ CLmax (Byte 18) [ns] 70 70 80

10 tAC SDRAM @ CLmax (Byte 18) [ns] 75 75 80

11 Error Correction Support 02 02 02

12 Refresh Rate 82 82 82

13 Primary SDRAM Width 04 04 04

14 Error Checking SDRAM Width 04 04 04

15 tCCD [cycles] 01 01 01

16 Burst Length Supported 0E 0E 0E

17 Number of Banks on SDRAM Device 04 04 04

18 CAS Latency 0C 0C 0C

19 CS Latency 01 01 01

20 Write Latency 02 02 02

21 DIMM Attributes 26 26 26

22 Component Attributes C0 C0 C0

23 tCK @ CLmax -0.5 (Byte 18) [ns] 75 75 A0

24 tAC SDRAM @ CLmax -0.5 [ns] 75 75 80

25 tCK @ CLmax -1 (Byte 18) [ns] 00 00 00

26 tAC SDRAM @ CLmax -1 [ns] 00 00 00

27 tRPmin [ns] 3C 50 50

28 tRRDmin [ns] 3C 3C 3C

29 tRCDmin [ns] 3C 50 50

30 tRASmin [ns] 2D 2D 32

31 Module Density per Rank 80 80 80

32 tAS, tCS [ns] 90 90 B0

Table 14 SPD Codes for HYS72D64500GR–[7F/7/8]–B

Product Type & Organization

HYS72D64500GR–7F–B

HYS72D64500GR–7–B

HYS72D64500GR–8–B

×72 ×72 ×72

1 rank 1 rank 1 rank

reg reg reg

Label Code PC2100R –

20220 PC2100R –

20330 PC1600R –

20220

Jedec SPD Revision Rev. 0.0 Rev. 0.0 Rev. 0.0

Byte# Description HEX HEX HEX

HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B

Registered DDR SDRAM-Modules

SPD Contents

Data Sheet 26 Rev. 1.03 2004-01

33 tAH, TCH [ns] 90 90 B0

34 tDS [ns] 50 50 60

35 tDH [ns] 50 50 60

36-40 not used 00 00 00

41 tRCmin [ns] 3C 41 46

42 tRFCmin [ns] 4B 4B 50

43 tCKmax [ns] 30 30 30

44 tDQSQmax [ns] 32 32 3C

45 tQHSmax [ns] 75 75 A0

46 not used 00 00 00

47 DIMM PCB Height 00 00 00

48-61 not used 00 00 00

62 SPD Revision 00 00 00

63 Checksum of Byte 0-62 D6 03 F8

64 JEDEC ID Code of Infineon (1) C1 C1 C1

65 JEDEC ID Code of Infineon (2) 49 49 49

66 JEDEC ID Code of Infineon (3) 4E 4E 4E

67 JEDEC ID Code of Infineon (4) 46 46 46

68 JEDEC ID Code of Infineon (5) 49 49 49

69 JEDEC ID Code of Infineon (6) 4E 4E 4E

70 JEDEC ID Code of Infineon (7) 45 45 45

71 JEDEC ID Code of Infineon (8) 4F 4F 4F

72 Module Manufacturer Location xx xx xx

73 Part Number, Char 1 37 37 37

74 Part Number, Char 2 32 32 32

75 Part Number, Char 3 44 44 44

76 Part Number, Char 4 36 36 36

Table 14 SPD Codes for HYS72D64500GR–[7F/7/8]–B

Product Type & Organization

HYS72D64500GR–7F–B

HYS72D64500GR–7–B

HYS72D64500GR–8–B

×72 ×72 ×72

1 rank 1 rank 1 rank

reg reg reg

Label Code PC2100R –

20220 PC2100R –

20330 PC1600R –

20220

Jedec SPD Revision Rev. 0.0 Rev. 0.0 Rev. 0.0

Byte# Description HEX HEX HEX

HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B

Registered DDR SDRAM-Modules

SPD Contents

Data Sheet 27 Rev. 1.03 2004-01

77 Part Number, Char 5 34 34 34

78 Part Number, Char 6 35 35 35

79 Part Number, Char 7 30 30 30

80 Part Number, Char 8 30 30 30

81 Part Number, Char 9 47 47 47

82 Part Number, Char 10 52 52 52

83 Part Number, Char 11 37 37 38

84 Part Number, Char 12 46 42 42

85 Part Number, Char 13 42 20 20

86 Part Number, Char 14 20 20 20

87 Part Number, Char 15 20 20 20

88 Part Number, Char 16 20 20 20

89 Part Number, Char 17 20 20 20

90 Part Number, Char 18 20 20 20

91 Module Revision Code xx xx xx

92 Test Program Revision Code xx xx xx

93 Module Manufacturing Date Year xx xx xx

94 Module Manufacturing Date Week xx xx xx

95 Module Serial Number (1) xx xx xx

96 Module Serial Number (2) xx xx xx

97 Module Serial Number (3) xx xx xx

98 Module Serial Number (4) xx xx xx

99-127 not used 00 00 00

Table 14 SPD Codes for HYS72D64500GR–[7F/7/8]–B

Product Type & Organization

HYS72D64500GR–7F–B

HYS72D64500GR–7–B

HYS72D64500GR–8–B

×72 ×72 ×72

1 rank 1 rank 1 rank

reg reg reg

Label Code PC2100R –

20220 PC2100R –

20330 PC1600R –

20220

Jedec SPD Revision Rev. 0.0 Rev. 0.0 Rev. 0.0

Byte# Description HEX HEX HEX

HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B

Registered DDR SDRAM-Modules

SPD Contents

Data Sheet 28 Rev. 1.03 2004-01

Table 15 SPD Codes for HYS72D1285[20/21]GR[–7F/7]–B, HYS72D128521GR–8

Part Number & Organization

HYS72D128520GR–7–B

HYS72D128520GR–7F–B

HYS72D128521GR–8–B

HYS72D128521GR–7–B

HYS72D128521GR–7F–B

×72 ×72 ×72 ×72 ×72

2 Ranks 2 Ranks 2 Ranks 2 Ranks 2 Ranks

reg reg reg reg reg

Label Code PC2100R-

20330-N PC2100R-

20220-N PC1600R-

20220-N PC2100R-

20330-N PC2100R-

20220-N

Jedec SP D Revision

Byte# Description HEX HEX HEX HEX HEX

0 Programmed SPD Bytes in E2PROM 80 80 80 80 80

1 Total number of Bytes in E2PROM 08 08 08 08 08

2 Memory Type (DDR = 07h) 07 07 07 07 07

3 Number of Row Addresses 0D 0D 0D 0D 0D

4 Number of Column Addresses 0B 0B 0B 0B 0B

5 Number of DIMM Ranks 02 02 02 02 02

6 Data Width (LSB) 48 48 48 48 48

7 Data Width (MSB) 00 00 00 00 00

8 Interface Voltage Levels 04 04 04 04 04

9 tCK @ CLmax (Byte 18) [ns] 70 70 80 70 70

10 tAC SDRAM @ CLmax (Byte 18) [ns] 75 75 80 75 75

11 Error Correction Support 02 02 02 02 02

12 Refresh Rate 82 82 82 82 82

13 Primary SDRAM Width 0404040404

14 Error Checking SDRAM Width 04 04 04 04 04

15 tCCD [cycles] 01 01 01 01 01

16 Burst Length Supported 0E 0E 0E 0E 0E

17 Number of Banks on SDRAM Device 04 04 04 04 04

18 CAS Latency 0C 0C 0C 0C 0C

19 CS Latency 01 01 01 01 01

20 Write Latency 02 02 02 02 02

21 DIMM Attributes 26 26 26 26 26

22 Component Attributes C0 C0 C0 C0 C0

23 tCK @ CLmax -0.5 (Byte 18) [ns] 75 75 A0 75 75

24 tAC SDRAM @ CLmax -0.5 [ns] 75 75 80 75 75

25 tCK @ CLmax -1 (Byte 18) [ns] 00 00 00 00 00

26 tAC SDRAM @ CLmax -1 [ns] 00 00 00 00 00

HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B

Registered DDR SDRAM-Modules

SPD Contents

Data Sheet 29 Rev. 1.03 2004-01

27 tRPmin [ns] 50 3C 50 50 3C

28 tRRDmin [ns] 3C 3C 3C 3C 3C

29 tRCDmin [ns] 50 3C 50 50 3C

30 tRASmin [ns] 2D 2D 32 2D 2D

31 Module Density per Rank 80 80 80 80 80

32 tAS, tCS [ns] 90 90 B0 90 90

33 tAH, TCH [ns] 90 90 B0 90 90

34 tDS [ns] 50 50 60 50 50

35 tDH [ns] 50 50 60 50 50

36 not used 00 00 00 00 00

37 not used 00 00 00 00 00

38 not used 00 00 00 00 00

39 not used 00 00 00 00 00

40 not used 00 00 00 00 00

41 tRCmin [ns] 41 3C 46 41 3C

42 tRFCmin [ns] 4B 4B 50 4B 4B

43 tCKmax [ns] 30 30 30 30 30

44 tDQSQmax [ns] 32 32 3C 32 32

45 tQHSmax [ns] 75 75 A0 75 75

46 not used 00 00 00 00 00

47 DIMM PCB Height 00 00 00 00 00

48-61 not used 00 00 00 00 00

62 SPD Revision 00 00 00 00 00

63 Checksum of Byte 0-62 04 D7 F9 04 D7

64 JEDEC ID Code of Infineon (1) C1 C1 C1 C1 C1

65 JEDEC ID Code of Infineon (2) 49 49 49 49 49

66 JEDEC ID Code of Infineon (3) 4E 4E 4E 4E 4E

Table 15 SPD Codes for HYS72D1285[20/21]GR[–7F/7]–B, HYS72D128521GR–8

Part Number & Organization

HYS72D128520GR–7–B

HYS72D128520GR–7F–B

HYS72D128521GR–8–B

HYS72D128521GR–7–B

HYS72D128521GR–7F–B

×72 ×72 ×72 ×72 ×72

2 Ranks 2 Ranks 2 Ranks 2 Ranks 2 Ranks

reg reg reg reg reg

Label Code PC2100R-

20330-N PC2100R-

20220-N PC1600R-

20220-N PC2100R-

20330-N PC2100R-

20220-N

Jedec SP D Revision

Byte# Description HEX HEX HEX HEX HEX

HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B

Registered DDR SDRAM-Modules

SPD Contents

Data Sheet 30 Rev. 1.03 2004-01

67 JEDEC ID Code of Infineon (4) 46 46 46 46 46

68 JEDEC ID Code of Infineon (5) 49 49 49 49 49

69 JEDEC ID Code of Infineon (6) 4E 4E 4E 4E 4E

70 JEDEC ID Code of Infineon (7) 45 45 45 45 45

71 JEDEC ID Code of Infineon (8) 4F 4F 4F 4F 4F

72 Module Manufacturer Location xx xx xx xx xx

73 Part Number, Char 1 3737373737

74 Part Number, Char 2 3232323232

75 Part Number, Char 3 4444444444

76 Part Number, Char 4 3131313131

77 Part Number, Char 5 3232323232

78 Part Number, Char 6 3838383838

79 Part Number, Char 7 3535353535

80 Part Number, Char 8 3232323232

81 Part Number, Char 9 3031313131

82 Part Number, Char 10 47 47 47 47 47

83 Part Number, Char 11 52 52 52 52 52

84 Part Number, Char 12 37 37 38 37 37

85 Part Number, Char 13 42 46 42 42 46

86 Part Number, Char 14 20 42 20 20 42

87 Part Number, Char 15 20 20 20 20 20

88 Part Number, Char 16 20 20 20 20 20

89 Part Number, Char 17 20 20 20 20 20

90 Part Number, Char 18 20 20 20 20 20

91 Module Revision Code xx xx xx xx xx

92 Test Program Revision Code xx xx xx xx xx

93 Module Manufacturing Date Year xx xx xx xx xx

Table 15 SPD Codes for HYS72D1285[20/21]GR[–7F/7]–B, HYS72D128521GR–8

Part Number & Organization

HYS72D128520GR–7–B

HYS72D128520GR–7F–B

HYS72D128521GR–8–B

HYS72D128521GR–7–B

HYS72D128521GR–7F–B

×72 ×72 ×72 ×72 ×72

2 Ranks 2 Ranks 2 Ranks 2 Ranks 2 Ranks

reg reg reg reg reg

Label Code PC2100R-

20330-N PC2100R-

20220-N PC1600R-

20220-N PC2100R-

20330-N PC2100R-

20220-N

Jedec SP D Revision

Byte# Description HEX HEX HEX HEX HEX

HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B

Registered DDR SDRAM-Modules

SPD Contents

Data Sheet 31 Rev. 1.03 2004-01

94 Module Manufacturing Date Week xx xx xx xx xx

95 Module Serial Number (1) xx xx xx xx xx

96 Module Serial Number (2) xx xx xx xx xx

97 Module Serial Number (3) xx xx xx xx xx

98 Module Serial Number (4) xx xx xx xx xx

99-

127 not used 00 00 00 00 00

Table 15 SPD Codes for HYS72D1285[20/21]GR[–7F/7]–B, HYS72D128521GR–8

Part Number & Organization

HYS72D128520GR–7–B

HYS72D128520GR–7F–B

HYS72D128521GR–8–B

HYS72D128521GR–7–B

HYS72D128521GR–7F–B

×72 ×72 ×72 ×72 ×72

2 Ranks 2 Ranks 2 Ranks 2 Ranks 2 Ranks

reg reg reg reg reg

Label Code PC2100R-

20330-N PC2100R-

20220-N PC1600R-

20220-N PC2100R-

20330-N PC2100R-

20220-N

Jedec SP D Revision

Byte# Description HEX HEX HEX HEX HEX

HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B

Registered DDR SDRAM-Modules

Package Outlines

Data Sheet 32 Rev. 1.03 2004-01

5 Package Outlines

Figure 4 Package Outlines Raw Card L (L-DIM-184-13)

18493

0.1

±0.1

4CB

128.95

133.35

4 MAX.

0.15 BA C

1.27

0.4

±0.13

30.48

±0.1

ø0.1

2.5 ±0.1

64.77

ABC

120.65

1.27 =

2.175

6.62

6.35 49.53

17.8

3 MIN.

3.8 ±0.13

±0.05

1.27 B

0.1 A C

0.2

Detail of contacts

±0.2

2.5

1.8 ±0.1 0.1 CBA

Burr max. 0.4 allowed

1) On ECC modules only

HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B

Registered DDR SDRAM-Modules

Package Outlines

Data Sheet 33 Rev. 1.03 2004-01

Figure 5 Package Outlines Raw Card M (L-DIM-184-12)

192

93 184

128.95

0.1

133.35

4 MAX.

0.15 BA C

1.27

0.4

±0.13

30.48

±0.1

6.35

±0.1

2.5

64.77

ø0.1ABC 2.175

6.62

49.53

±0.1

0.1

±0.1

1.8 A CB

3.8

±0.13

3 MIN.

17.8

1.27 1±0.05 A

0.1 CB

Detail of contacts

0.2

2.5

±0.2

120.65x95 1.27 =

Burr max. 0.4 allowed

1) On ECC modules only

HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B

Registered DDR SDRAM-Modules

Package Outlines

Data Sheet 34 Rev. 1.03 2004-01

Figure 6 Package Outlines Raw Card N (L-DIM-184-14)

192

93 184

128.95

0.1

133.35

6.81 MAX.

0.15 BA C

±0.1

ø0.1

2.5

±0.1

64.77

ABC

120.65

1.27 =

2.175

6.62

6.35 49.53

±0.13

30.48

1.27

0.4

±0.1

3.8

±0.13

3 MIN.

0.1

1.8 ±0.1 BA C

17.8

1.27 1

±0.05

0.1 A C

Detail of contacts

0.2

2.5

±0.2

Burr max. 0.4 allowed

1) On ECC modules only

HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B

Registered DDR SDRAM-Modules

Application Note

Data Sheet 35 Rev. 1.03 2004-01

6 Application Note

Power Up and Power Management on DDR Registered DIMMs (according to JEDEC ballot JC-42.5 Item

1173)

184-pin Double Data Rate (DDR) Registered DIMMs include two new features to facilitate controlled power-up and

to minimize power consumption during low power mode. One feature is externally controlled via a system-

generated RESET signal; the second is based on module detection of the input clocks. These enhancements

permit the modules to power up with SDRAM outputs in a High-Z state (eliminating risk of high current dissipations

and/or dotted I/Os), and result in the powering-down of module support devices (registers and Phase-Locked

Loop) when the memory is in Self-Refresh mode.

The new RESET pin controls power dissipation on the module’s registers and ensures that CKE and other SDRAM

inputs are maintained at a valid ‘low’ level during power-up and self refresh. When RESET is at a low level, all the

regist er outpu ts are forc ed to a low leve l, and all diffe renti al regist er inpu t receive rs are powe red down, res ultin g

in very low r egis ter power consump tio n. T he RE SET pin, located on DIMM tab #1 0, is driv en fr om th e sys tem as

an asynchronous signal according to the attached details. Using this function also permits the system and DIMM

clocks to be stopped during memory Self Refresh operation, while ensuring that the SDRAMs stay in Self Refresh

mode.

As described in the table above, a low on the RESET input ensures that the Clock Enable (CKE) signal(s) are

maintained low at the SDRAM pins (CKE being one of the 'Q' signals at the register output). Holding CKE low

maintains a high impedance state on the SDRAM DQ, DQS and DM outputs — where they will remain until

activated by a valid ‘read’ cycle. CKE low also maintains SDRAMs in Self Refresh mode when applicable.

The DDR PLL devices automatically detect clock activity above 20MHz. When an input clock frequency of 20MHz

or greater is detected, the PLL begins operation and initiates clock frequency lock (the minimum operating

frequency at which all specifications will be met is 95MHz). If the clock input frequency drops below 20MHz (actual

detect fr equ enc y wil l v ary by ve ndo r), th e P LL V CO (Vol tag e Con tr olled Oscil lat or) is sto ppe d, ou tputs are mad e

High-Z, an d th e differe ntial inputs are powered do wn — r esulting in a to tal PL L c ur rent co ns ump tion of les s tha n

1mA. Use of thi s low power PL L func ti on makes the us e of the PLL RESE T (or G pi n) unne ce ss ar y , and it is tie d

inactive on the DIMM.

This application note describes the required and optional system sequences associated with the DDR Registered

DIMM 'RESET' function . It is impo rtant to n ote that al l references to CKE ref er to both CKE0 and CKE1 for a 2-

bank DIMM. Be cau se RE SE T applie s to all DIMM r egi ste r de vices, it is ther ef ore n ot possi bl e to uni quel y control

CKE to one physical DIMM bank through the use of the RESET pin.

Table 16 RESET Truth Table

Outputs

RESET CK CK Data in (D) Data out (Q)

H Rising Falling H H

H Rising Falling L L

H L or H L or H X Qo

H High Z High Z X Illegal input

conditions

L X or Hi-Z X or Hi-Z X or Hi-Z L

X: Don’t care, Hi-Z: High Impedance, Qo: Data latched at the previous of CK rising and CK falling

HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B

Registered DDR SDRAM-Modules

Application Note

Data Sheet 36 Rev. 1.03 2004-01

Power-Up Sequence with RESET — Required

1. The syst em set s R ES ET at a valid low level.

This is the preferred default state during power-up. This input condition forces all register outputs to a low state

independent of the condition on the register inputs (data and clock), ensuring that CKE is at a stable low-level

at the DDR SDRAMs.

2. The power supplies should be initialized according to the JEDEC-approved initialization sequence for DDR

SDRAMs.

3. Stabilization of Clocks to the SDRAM

The syste m must dr ive clo cks to the a pplic ation freq uency (PLL oper ation is not assu red unt il the in put clo ck

reache s 20 MHz). Stability of clocks at the SDRAMs wi ll be affected by all a pplicable system clock devices,

and time must be allotted to permit all clock devices to settle. Once a stable clock is received at the DIMM PLL,

the required PLL stabilization time (assuming power to the DIMM is stable) is 100 microseconds. When a

stable clock is present at the SDRAM input (driven from the PLL), the DDR SDRAM requires 200 µsec prior t o

SDRAM operation.

4. The system applies valid logic levels to the data inputs of the register (address and controls at the DIMM

connector).

CKE must be maintained low and all other inputs should be driven to a known state. In general these

commands can be determined by the system designer. One o ption is to apply an SDRAM ‘NOP’ com mand

(with CK E l ow), as this is th e fir st com mand defined by the JE DEC in itial ization sequ ence (ideall y this woul d

be a ‘NOP Deselect’ command). A second option is to apply low levels on all of the register inputs to be

consistent with the state of the register outputs.

5. The system switches RESET to a logic ‘high’ level.

The SDRAM is now functional and prepared to receive commands. Since the RESET signal is asynchronous,

setting the RESET timing in relation to a specific clock edge is not required (during this period, register inputs

must remai n stab le).

6. The system must maintain stable register inputs until normal register operation is attained.

The registers have an activation time that allows their clock receivers, data input receivers, and output drivers

suffici ent time to be turned on an d become stabl e. During this time the s ystem must mainta in the valid lo gic

levels described in step 5. It is also a functional requirement that the registers maintain a low state at the CKE

outputs to guarantee that the DDR SDRAMs continue to receive a low level on CKE. Register activation time

(t (ACT) ), from asynchronous switching of RESET from low to high until the registers are stable and ready to

accept an input signal, is specified in the register and DIMM do-umentation.

7. The system can begin the JEDEC-defined DDR SDRAM power-up sequence (according to the JEDEC-

pproved initialization sequence).

Self Refresh Entry (RESET low, clocks powered off) — Optional

Self Re fresh can be u sed to retain d ata in DDR SDRA M DIM Ms even if the rest o f the system is po wered do wn

and the clocks are off. This mode allows the DDR SDRAMs on the DIMM to retain data without external clocking.

Self Refresh mode is an ideal time to utilize the RESET pin, as this can reduce register power consumption

(RESET low deactivates register CK and CK, data input receivers, and data output drivers).

1. 1. The system applies Self Refresh entry command.

(CKE→Low, CS→Low, RAS → Low, CAS→ Low, WE→ High)

Note:Note: The com mands re ach the DDR S DRAM o ne clock l ater due to the add itional regis ter pipelin ing on a

Registered DIMM. After this command is issued to the SDRAM, all of the address and control and clock input

conditions to the SDRAM are Don’t Cares— with the exception of CKE.

2. The syst em set s R ES ET at a valid low level.

This input condition forces all register outputs to a low state, independent of the condition on the registerm

inputs (data and clock), and ensures that CKE, and all other control and address signals, are a stable low-level

at the DDR SDRAMs. Since the RESET signal is asynchronous, setting the RESET timing in relation to a

specific clock edge is not required.

3. The system turns off clock inputs to the DIMM. (Optional)

a. In order to reduce DIMM PLL current, the clock inputs to the DIMM are turned off, resulting in High-Z clock

HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B

Registered DDR SDRAM-Modules

Application Note

Data Sheet 37 Rev. 1.03 2004-01

inputs to both the SDRAMs and the registers. This must be done after the RESET deactivate time of the

signals must maintain valid levels after RESET low has been applied and is specified in the register and DIMM

documentation.

b.The system may release DIMM address and control inputs to High-Z.

This can be done after the RESET deactivate time of the register. The deactivate time defines the time in which

the clocks and the control and the address signals must maintain valid levels after RESET low has been

applied. It is highly recommended that CKE continue to remain low during this operation.

4. The DIMM is in lowest power Self Refresh mode.

Self Refresh Exit (RESET low, clocks powered off) — Optional

1. Stabilization of Clocks to the SDRAM.

The syste m must dr ive clo cks to the a pplic ation freq uency (PLL oper ation is not assu red unt il the in put clo ck

reache s ~20MHz). S tability of clocks at the SDRAMs will be affect ed by all a pplicabl e system cl ock devic es,

and time must be allotted to permit all clock devices to settle. Once a stable clock is received at the DIMM PLL,

the required PLL stabilization time (assuming power to the DIMM is stable) is 100 microseconds.

2. The system applies valid logic levels to the data inputs of the register (address and controls at the DIMM

connector).

CKE must be maintained low and all other inputs should be driven to a known state. In general these

commands can be determined by the system designer. One o ption is to apply an SDRAM ‘NOP’ com mand

(with CKE low), as this is the first command defined by the JEDEC Self Refresh Exit sequence (ideally t his

would be a ‘ NOP Deselec t’ comman d). A secon d option is to apply l ow levels on all of the register inpu ts, to

be consistent with the state of the register outputs.

3. The system switches RESET to a logic ‘high’ level.

The SDRAM is now functional and prepared to receive commands. Since the RESET signal is asynchronous,

RESET timing relationship to a specific clock edge is not required (during this period, register inputs must

remain stable) .

4. The system must maintain stable register inputs until normal register operation is attained.

The registers have an activation time that allows the clock receivers, input receivers, and output drivers

suffici ent time to be turned on an d become stabl e. During this time the s ystem must mainta in the valid lo gic

levels described in Step 2. It is also a functional requirement that the registers maintain a low state at the CKE

outputs to guar an tee that t he DDR SDRA Ms c onti nue to rec ei ve a lo w lev el on C KE . Reg ister activ at ion tim e

(t (ACT) ), from asynchronous switching of RESET from low to high until the registers are stable and ready to

accept an input signal, is specified in the register and DIMM do-umentation.

5. System can begin the JEDEC-defined DDR SDRAM Self Refresh Exit Procedure.

Self Refresh Entry (RESET low, clocks running) — Optional

Although keeping the clocks running increases power consumption from the on-DIMM PLL during self refresh, this

is an alternate operating mode for these DIMMs.

1. 1. System enters Self Refresh entry command.

(CKE→ Low, CS→ Low, RAS→ Low, CAS→ Low, WE→ High)

Note:Note: The com mands re ach the DDR S DRAM o ne clock l ater due to the add itional regis ter pipelin ing on a

Registered DIMM. After this command is issued to the SDRAM, all of the address and control and clock input

conditions to the SDRAM are Don’t Cares — with the exception of CKE.

2. The syst em set s R ES ET at a valid low level.

This input condition forces all register outputs to a low state, independent of the condition on the data and clock

3. The system may release DIMM address and control inputs to High-Z.

This can b e don e af ter the RE S ET deac tiv ate tim e of th e regi ste r (t (INA CT) ). Th e dea cti vate ti me des cri bes

the tim e in which the c locks and the cont rol and the ad dress s ignals m ust mainta in vali d levels after RES ET

low has been applied. It is highly recommended that CKE continue to remain low during the operation.

4. The DIMM is in a low power, Self Refresh mode.

HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B

Registered DDR SDRAM-Modules

Application Note

Data Sheet 38 Rev. 1.03 2004-01

Self Refresh Exit (RESET low, clocks running) — Optional

1. The system applies valid logic levels to the data inputs of the register (address and controls at the DIMM

connector). CKE must be maintain ed low and all other inputs should be driven to a known state. In general

these commands can be determined by the system designer. One option is to apply an SDRAM ‘NOP’

command (with CKE low), as this is the first command defined by the Self Refresh Exit sequence (ideally this

would be a ‘NOP Deselect’ command). A second option is to apply low levels on all of the register inputs to be

consistent with the state of the register outputs.

2. The system switches RESET to a logic 'high' level.

The SDRAM is now functional and prepared to receive commands. Since the RESET signal is asynchronous,

it does not need to be tied to a particular clock edge (during this period, register inputs must continue to remain

stable).

3. The system must maintain stable register inputs until normal register operation is attained.

The registers have an activation time that allows the clock receivers, input receivers, and output drivers

suffici ent time to be turned on an d become stabl e. During this time the s ystem must mainta in the valid lo gic

levels described in Step 1. It is also a functional requirement that the registers maintain a low state at the CKE

outputs in order to guara ntee that the DDR SDRAMs continue to re ceive a low level on CKE. This activation

time, from asynchronous switching of RESET from low to high, until the registers are stable and ready to accept

an input signal, is t (ACT ) as specified in the register and DIMM documentation.

4. The system can begin JEDEC defined DDR SDRAM Self Refresh Exit Procedure.

Self Refresh Entry/Exit (RESET high, clocks running) — Optional

As this sequence does not involve the use of the RESET function, the JEDEC standard SDRAM specification

explains in detail the method for entering and exiting Self Refresh for this case.

Self Refresh Entry (RESET high, clocks powered off) — Not Permissible

In order to maintain a valid low level on the register output, it is required that either the clocks be running and the

system drive a low level on CKE, or the clocks are powered off and RESET is asserted low according to the

sequence defined in this application note. In the case where RESET remains high and the clocks are powered off,

the PLL drives a High-Z clock input into the register clock input. Without the low level on RESET an unknown DIMM

state will result.

Published by Infineon Technologies AG