IXFL100N50P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
1 = Gate
2,4 = Drain
3 = Source
ISOPLUS264 (IXFL) OUTLINE
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 50A, Note 1 50 80 S
Ciss 20 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 1700 pF
Crss 140 pF
td(on) 36 ns
tr 29 ns
td(off) 110 ns
tf 26 ns
Qg(on) 240 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 50A 96 nC
Qgd 78 nC
RthJC 0.20C/W
RthCS 0.15 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 100 A
ISM Repetitive, Pulse Width Limited by TJM 250 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 200 ns
QRM 0.6 C
IRM 6.0 A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 50A
RG = 1 (External)
IF = 25A, -di/dt = 100A/s
VR = 100V, VGS = 0V