© 2017 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 500 V
VDGR TJ= 25C to 150C, RGS = 1M 500 V
VGSS Continuous 30 V
VGSM Transient 40 V
ID25 TC= 25C 68 A
IDM TC= 25C, Pulse Width Limited by TJM 250 A
IATC= 25C 100 A
EAS TC= 25C5J
dv/dt IS IDM, VDD VDSS, TJ 150C 20 V/ns
PDTC= 25C 625 W
TJ-55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD Plastic Body for 10s 260 °C
FCMounting Force 40..120 / 9..27 N/lb.
VISOL 50/60 Hz, RMS t = 1 min 2500 V~
IISOL 1 mA t = 1 s 3000 V~
Weight 8g
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 3mA 500 V
VGS(th) VDS = VGS, ID = 8mA 3.0 5.0 V
IGSS VGS = 30V, VDS = 0V 200 nA
IDSS VDS = VDSS, VGS = 0V 25 A
TJ = 125C 2 mA
RDS(on) VGS = 10V, ID = 50A, Note 1 52 m
IXFL100N50P VDSS = 500V
ID25 = 68A
RDS(on)
52m
trr
200ns
DS99563F(8/17)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Features
Silicon Chip on Direct-Copper-Bond
Substrate
- High Power Dissipation
- Isolated Mounting Surface
- 2500V~ Electrical Isolation
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Low RDS(on) and QG
Advantages
Easy to Mount
Space Savings
AApplications
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
AC Motor Control
High Speed Power Switching
Appliccation
PolarTM HiPerFETTM
Power MOSFET
(Electrically Isolated Tab)
ISOPLUS264
G = Gate D = Drain
S = Source
G
DSIsolated Tab
IXFL100N50P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
1 = Gate
2,4 = Drain
3 = Source
ISOPLUS264 (IXFL) OUTLINE
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 50A, Note 1 50 80 S
Ciss 20 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 1700 pF
Crss 140 pF
td(on) 36 ns
tr 29 ns
td(off) 110 ns
tf 26 ns
Qg(on) 240 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 50A 96 nC
Qgd 78 nC
RthJC 0.20C/W
RthCS 0.15 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 100 A
ISM Repetitive, Pulse Width Limited by TJM 250 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 200 ns
QRM 0.6 C
IRM 6.0 A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 50A
RG = 1 (External)
IF = 25A, -di/dt = 100A/s
VR = 100V, VGS = 0V
© 2017 IXYS CORPORATION, All Rights Reserved
IXFL100N50P
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0
10
20
30
40
50
60
70
80
90
100
012345
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
5V
6V
7V
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
0
20
40
60
80
100
120
140
160
180
200
220
0 5 10 15 20 25
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
7V
6V
8V
Fig. 3. Output Characteristics @ T
J
= 125
o
C
0
10
20
30
40
50
60
70
80
90
100
0246810
V
DS
- Volts
I
D
- Amperes
5V
6V
V
GS
= 10V
7V
Fig. 4. R
DS(on)
Normalized to I
D
= 50A Value vs.
Junction Temperature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 100A
I
D
= 50A
Fig. 5. R
DS(on)
Normalized to I
D
= 50A Value vs.
Drain Current
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0 20 40 60 80 100 120 140 160 180 200 220
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 6. Maximum Drain Current vs. Case Temperature
0
10
20
30
40
50
60
70
80
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
IXFL100N50P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
4.04.55.05.56.06.57.07.5
V
GS
- Volts
I
D
- Amperes
T
J
= 125
o
C
25
o
C
- 40
o
C
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
160
0 20 40 60 80 100 120 140 160 180
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40
o
C
125
o
C
25
o
C
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
50
100
150
200
250
300
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6
V
SD
- Volts
I
S
- Amperes
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 50 100 150 200 250
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 250V
I
D
= 50A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1000
10 100 1,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150
o
C
T
C
= 25
o
C
Single Pulse
100μs
R
DS(on)
Limit
DC
10ms
1ms
© 2017 IXYS CORPORATION, All Rights Reserved
IXFL100N50P
IXYS REF: F_100N50P (9S-745) 2-08-06-A
Fig. 13. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
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