VCE IC = = 2500 V 50 A IGBT-Die 5SMX12L2505 Die size: 12.4 * 12.4 mm * * Doc. No. 5SYA1610-00 Aug. 01 Low on-state IGBT die Highly rugged design Maximum Rated Values Parameter Collector-Emitter Voltage (Tvj = 25C, unless specified otherwise) Symbol V IC 50 A ESD Device Sensitive to ESD (Tj = 25C, unless specified otherwise) Symbol Conditions Collector-Emitter Sat.Voltage VCE(sat) Collect.-Emit. leakage Current ICES VCE = 2500V, VGE = 0V, Tvj=125C Gate-Emitter leakage Current IGES VCE = 0V ,VGE = 20 V Gate-Emitter Threshold Voltage VGE(TO) IC = 10 mA, VCE = VGE Internal gate resistance Unit 2500 IGBT Characteristic Values Parameter Values VCES DC Collector Current Electro Static Discharge Conditions IC = Icrated, VGE = 15 V min. typ. max. 1.8 Unit 2.65 V 1 mA 500 nA 9 V 6 RGint Mechanical Characteristics Parameter Unit Overall die Dimensions L*W 12.4 * 12.4 mm Exposed L*W (except gate pad) Front metal 9.0 * 9.0 mm Gate pad 1.5 * 1.5 mm 310 +/- 20 m L*W Thickness Metallization Front AISi1/Al 12 m Back AISi1 / Ti / Ni / Ag 3 m ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SMX12L2505 Outline Drawing Note: All dimensions are shown in mm Positioning tolerance of emitter contact area (shaded area) to the die centre : 0.3mm ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)58 586 1419 Fax +41 (0)58 586 1306 Email abbsem@ch.abb.com Internet www.abbsem.com Doc. No. 5SYA1610-00 Aug. 01