ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VCE = 2500 V
IC=50A
Die size: 12.4 * 12.4 mm
Doc. No. 5SYA1610-00 Aug. 01
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Low on-state IGBT die
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Highly rugged design
Maximum Rated Values (Tvj = 25°C, unless specified otherwise)
Parameter Symbol Conditions Values Unit
Collector-Emitter Voltage VCES 2500 V
DC Collector Current IC50 A
Electro Static Discharge ESD Device Sensitive to ESD
IGBT Characteristic Values (Tj = 25°C, unless specified otherwise)
Parameter Symbol Conditions min. typ. max. Unit
Collector-Emitter Sat.Voltage VCE(sat) IC = Icrated, VGE = 15 V 1.8 2.65 V
Collect.-Emit. leakage Current ICES VCE = 2500V, VGE = 0V, Tvj=125°C 1 mA
Gate-Emitter leakage Current IGES VCE = 0V ,VGE = ±20 V ±500 nA
Gate-Emitter Threshold Voltage VGE(TO) IC = 10 mA, VCE = VGE 69V
Internal gate resistance RGint Ω
Mechanical Characteristics
Parameter Unit
Overall die L*W 12.4 * 12.4 mm
Exposed
Front metal L*W (except gate pad) 9.0 * 9.0 mm
Gate pad L*W 1.5 * 1.5 mm
Dimensions
Thickness 310 +/- 20 µm
Front AISi1/Al 12 µm
Metallization Back AISi1 / Ti / Ni / Ag 3 µm
IGBT-Die
5SMX12L2505
5SMX12L2505
Outline Drawing
Note: All dimensions are shown in mm
Positioning tolerance of emitter contact area (shaded area) to the die centre : ± 0.3mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA1610-00 Aug. 01
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abbsem.com
