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PROTECTION PRODUCTS
uClamp3311PQ
Device Connection Options
The µClamp3311PQ is designed to protect one data
line operating up to 3.3 volts. It will present a high
impedance to the protected line up to 3.3 volts. It will
“turn on” when the line voltage exceeds 3.5 volts. The
device is bidirectional and may be used on lines where
the signal polarity is above and below ground. These
devices are not recommended for use on dc power supply
lines due to their snap-back voltage characteristic.
EPD TVS Characteristics
These devices are constructed using Semtech’s
proprietary EPD technology. The structure of the EPD
TVS is vastly different from the traditional pn-junction
devices. At voltages below 5V, high leakage current
and junction capacitance render conventional ava-
lanche technology impractical for most applications.
However, by utilizing the EPD technology, these devices
can effectively operate at 3.3V while maintaining
excellent electrical characteristics.
The EPD TVS employs a complex nppn structure in
contrast to the pn structure normally found in tradi-
tional silicon-avalanche TVS diodes. The EPD mecha-
nism is achieved by engineering the center region of
the device such that the reverse biased junction does
not avalanche, but will “punch-through” to a conduct-
ing state. This structure results in a device with supe-
rior DC electrical parameters at low voltages while
maintaining the capability to absorb high transient
currents.
Circuit Board Layout Recommendations for Suppres-
sion of ESD.
Good circuit board layout is critical for the suppression
of ESD induced transients. The following guidelines are
recommended:
zPlace the TVS near the input terminals or connec-
tors to restrict transient coupling.
zMinimize the path length between the TVS and the
protected line.
zMinimize all conductive loops including power and
ground loops.
zThe ESD transient return path to ground should be
kept as short as possible.
zNever run critical signals near board edges.
zUse ground planes whenever possible.
Applications Information
Device Schematic & Pin Configuration
IPP
ISB
IPT
IR
VRWM VV PT VC
VF
IF
SB
EPD TVS IV Characteristic Curve