
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 20N60 IXGM 20N60
IXGH 20N60A IXGM 20N60A
Inductive load, T J = 25°°
°°
°C
IC = IC90, VGE = 15 V, L = 300 µH
VCE = 0.8 VCES, RG = Roff = 82 Ω
Switching times may increase
for VCE (Clamp) > 0.8 • V CES,
higher TJ or increased RG
TO-247 AD Outline
TO-204AE Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
1 = Gate
2 = Emitter
Case = Collector
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= I C90; VCE = 10 V, 6 14 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies 1500 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 200 pF
Cres 40 pF
Qg100 120 nC
Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES 20 30 nC
Qgc 60 90 nC
td(on) 100 ns
tri 200 ns
td(off) 600 ns
tfi 20N60A 200 ns
Eoff 20N60A 1.5 mJ
td(on) 100 ns
tri 200 ns
Eon 2mJ
t
d(off) 900 1500 ns
tfi 20N60 530 2000 ns
20N60A 250 600 ns
Eoff 20N60 3.2 mJ
20N60A 2.0 mJ
RthJC 0.83 K/W
RthCK 0.25 K/W
IXGH 20N60 and IXGH 20N60A characteristic curves are located on the
IXGH 20N60U1 and IXGH 20N60AU1 data sheets.
Inductive load, TJ = 25°°
°°
°C
IC = IC90, VGE = 15 V,
L = 300 µH
VCE = 0.8 VCES,
RG = Roff = 82 Ω
Remarks: Switching times
may increase for VCE
(Clamp) > 0.8 • V CES,
higher TJ or increased RG