SIEMENS GaAs FET CFY 30 Datasheet * Low noise ( F,,,= 1.4 dB @ 4 GHz) * High gain ( 11.5 cB typ. @ 4 GHz) * For oscillators up to 12 GHz *For amplifiers up to 6 GHz * lon implanted planar structure * Chip all gold metallization * Chip nitride passivation ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code Pin Configuration Package 1) (tape andreel) 1 2 3 4 CFY 30 A2 Q62703-F97; S| D|S|G SOT-143 Maximum ratings Symbol Value Unit Drain-source voltage Vos 5 V Drain-gate voltage . VDG 7 V Gate-source voltage Vas 4... +0.5 V Drain current ID 80 mA Channel temperature TCh 150 C Storage temperature range Tstg -40...+150 C Total power dissipation (TS < 70C) 2) Prot 250 mw Thermal resistance Channel-soldering point 2) Rthchs <320 K/W 1) Dimensions see chapter Package Outlines 2) T, is measured on the source 1 lead at the soldering point to the PCB. Siemens Aktiengesellschaft pg. 1/6 11.01.1996 HL EH PD 21SIEMENS GaAs FET CFY 30 Electrical characteristics at Ta = 25C, unless otherwise specified Characteristics Symbol | min typ max Unit Drain-source saturation current l es mA Vi =35V, Vi=0V 20 50 80 Pinch-off voltage cei V Vij =35V |=1mA -0.5 -1.3 -4.0 Transconductance g ms Vi =35V 1=15mA 20 30 - Gate leakage current I A Vij=35V 1=15mA - 0.1 2 Noise figure F dB V=35V |=15mA f=4GHz - 1.4 1.6 os od f - 2.0 > = 6 GHz Associated gain G dB Viet ov I= 15mA f= 4 GHz 10 11.5 - f = 6 GHz - 8.9 - Maximum available gain MAG dB V=35V 1=15mA {=6GHz - 11.2 - Maximum stable gain MSG dB V=35V 1=15mA {=4GHz - 14.4 - Power output at 1 dB compression P. is dBm Vi =4V | =30mA_ f=6GHz - 16 - DoS oO Siemens Aktiengesellschaft pg. 2/6 11.01.1996 HL EH PD 21SIEMENS GaAs FET CFY 30 Typical Common Source Noise Parameters |! =15mA V =3.5V Z =502 D OS 0 f Fin Ga Vopt Rn N Fsoo G(F,, 9) GHz | dB | dB | MAG| ANG| Q - dB dB 2 1.0 | 15.5 | 0.72 | 27 | 49/017] 29 10.0 4 1.4 [11.5 | 0.64 | 61 | 29|0.17| 27 9.3 6 2.0 | 89 | 046 | 101 | 19/030] 28 7.5 8 2.5 | 7.1 | 0.31 | 153 | 9 | 0.31 | 28 6.4 10 | 3.0 | 58 | 0.34 | -133 | 14| 0.38] 3.4 4.2 12 | 3.5 | 5.0 | 0.41 | -93 | 28/0.42| 4.1 2.9 Total Power Dissipation Pitot = f (T,;T,) 300 P ioe [MW ] 200 100 0 50 100 150 8 TaiTs [C ] Siemens Aktiengesellschaft pg. 3/6 11.01.1996 HL EH PD 21SIEMENS GaAs FET CFY 30 Output characteristics |, = f (V,.) | lo [mA] 40 30 20 10 Siemens Aktiengesellschaft pg. 4/6 11.01.1996 HL EH PD 21SIEMENS GaAs FET CFY 30 Typical Common Source S-Parameters Ip =15 mA Up =3.5V Z, = 50 Q f $11 $21 $12 $22 GHz |Mag Ang Mag Ang Mag Ang Mag Ang 0.1 1.00 -1 2.43 178 0.003 87 0.70 -1 0.4 1.00 -6 2.43 171 0.010 23 0.69 -5 0.8 0.99 -14 2.43 162 0.020 78 0.68 -11 1.2 0.98 21 2.43 154 0.030 72 0.67 -15 1.6 0.97 -28 2.44 145 0.040 66 0.66 -20 2.0 0.96 -36 2.45 137 0.050 60 0.65 -26 2.4 0.93 -44 2.47 129 0.058 55 0.64 -30 2.8 0.90 -53 2.49 120 0.066 50 0.62 -35 3.2 0.87 -62 2.50 111 0.074 45 0.60 -41 3.6 0.83 -72 2.50 102 0.082 39 0.57 -47 4.0 0.80 -82 2.50 93 0.090 32 0.54 -54 4.4 0.77 -92 2.51 83 0.097 25 0.50 -61 4.8 0.74 -104 2.49 73 0.103 18 0.46 -67 5.2 0.70 -115 2.45 64 0.108 12 0.43 -73 5.6 0.66 127 2.41 54 0.112 6 0.40 -80 6.0 0.63 -139 2.36 45 0.114 0 0.36 -88 6.4 0.60 -150 2.30 37 0.115 -6 0.31 -98 6.8 0.57 -162 2.24 27 0.116 11 0.27 -110 7.2 0.55 -174 2.19 17 0.116 -17 0.24 -122 7.6 0.54 172 2.14 8 0.116 -22 0.21 -137 8.0 0.53 160 2.08 -2 0.115 -27 0.19 -154 8.4 0.54 147 2.00 -11 0.113 -32 0.18 -173 8.8 0.55 135 1.92 -21 0.111 -37 0.18 171 9.2 0.56 124 1.83 -30 0.109 -42 0.19 155 9.6 0.57 114 1.72 -40 0.107 -46 0.21 141 10.0 0.58 106 1.61 -48 0.104 -50 0.23 128 10.4 0.59 98 1.51 -56 0.102 -53 0.26 118 10.8 0.60 91 1.42 -62 0.101 -56 0.29 108 11.2 0.61 85 1.35 -69 0.099 -58 0.32 100 11.6 0.62 79 1.30 -75 0.098 -60 0.34 93 12.0 0.62 74 1.25 -81 0.096 -63 0.36 85 Siemens Aktiengesellschaft pg. 5/6 11.01.1996 HL EH PD 21SIEMENS GaAs FET CFY 30 Typical Common Source S-Parameters Ip = 30 mA Up =3.5 V Z, = 50 Q f $11 $21 $12 $22 GHz Mag Ang Mag Ang Mag Ang Mag Ang 0.1 1.00 -2 3.23 178 0.002 85 0.71 -1 0.4 1.00 -8 3.21 171 0.009 79 0.70 -6 0.8 0.99 -16 3.19 162 0.017 73 0.69 ~11 1.2 0.97 -24 3.18 153 0.025 70 0.67 -16 1.6 0.95 -32 3.17 143 0.034 65 0.66 -21 2.0 0.92 -40 3.17 135 0.042 61 0.65 -26 2.4 0.90 -48 3.17 127 0.051 56 0.63 -31 2.8 0.87 -58 3.17 119 0.059 50 0.61 -36 3.2 0.83 -68 3.16 109 0.067 45 0.58 -42 3.6 0.79 -79 3.12 99 0.073 40 0.55 -48 4.0 0.75 -91 3.08 88 0.079 34 0.52 -54 44 0.71 -102 3.04 78 0.084 28 0.50 ~60 4.8 0.67 -114 3.00 68 0.089 21 0.47 -66 5.2 0.63 -126 2.95 58 0.092 15 0.43 -73 5.6 0.60 -138 2.87 49 0.094 10 0.38 -81 6.0 0.57 -150 2.77 40 0.096 4 0.34 -89 6.4 0.54 -162 2.68 31 0.097 -1 0.30 -99 6.8 0.52 -174 2.58 22 0.098 6 0.27 -109 7.2 0.51 173 2.50 14 0.099 11 0.24 -121 7.6 0.50 160 2.43 5 0.099 -16 0.21 -134 8.0 0.50 147 2.36 -4 0.099 -20 0.18 -148 8.4 0.51 135 2.26 -13 0.099 -24 0.16 -164 8.8 0.52 125 2.15 -22 0.099 -29 0.16 176 9.2 0.54 115 2.04 -30 0.099 -33 0.17 158 9.6 0.55 107 1.93 -39 0.099 -37 0.19 142 10.0 0.57 99 1.82 -47 0.099 -41 0.22 128 10.4 0.59 91 1.71 -54 0.100 -44 0.25 118 10.8 0.60 85 1.60 -62 0.101 -47 0.27 109 11.2 0.61 79 1.51 -69 0.102 -49 0.30 100 11.6 0.62 73 1.44 -75 0.103 -52 0.32 92 12.0 0.62 68 1.38 -82 0.104 -55 0.34 85 Siemens Aktiengesellschaft pg. 6/6 11.01.1996 HL EH PD 21