- 1 -
Ver.2017-09-25
NJG1138HA8
900MHz Band LNA GaAs MMIC
GENERAL DESCRIPTION PACKAGE OUTLINE
The NJG1138HA8 is a low noise amplifier designed for UMTS and LTE
low band applications. The NJG1138HA8 has two gain state which are
high gain mode and low gain mode. The NJG1138HA8 features high gain,
low noise figure and high IP3.
An Ultra-small and thin USB6-A8 package is adopted.
APPLICATIONS
UMTS and LTE Low band applications
Mobile phone, Data card, modem and others mobile device applications
700MHz Band application*
FEATURES
Low operating voltage +2.8V typ.
Low control voltage +1.8V typ.
Low current consumption 2.3mA typ. @VCTL=1.8V
10μA typ. @VCTL=0V
High gain 16.0dB typ. @VCTL=1.8V, fRF =942.5MHz
Low noise figure 1.4dB typ. @VCTL=1.8V, fRF =942.5MHz
Input power at 1dB gain compression point -8.5dBm typ. @VCTL=1.8V, fRF =942.5MHz
+16.0dBm typ. @VCTL=0V, fRF=942.5MHz
High input IP3 0dBm typ. @VCTL=1.8V, fRF =942.5MHz
+14dBm typ. @VCTL=0V, fRF=942.5MHz
Small package size USB6-A8 (Package size: 1.0mmx1.2mmx0.38mm typ.)
Lead-free and halogen-free
PIN CONFIGURATION
TRUTH TABLE
“H”=VCTL(H), “L”=VCTL(L)
VCTL
LNA Mode
H
High Gain Mode
L
Low Gain Mode
Note: Specifications and description listed in this datasheet are subject to change without notice.
Pin Connection
1. VCTL
2. RFOUT
3. GND
4. RFIN
5. GND
6. NC (GND)
NJG1138HA8
13
RFIN
Logic
Circuit
RFOUT
GND
Bias
Circuit
2
3
1
4
6
5
VCTL
GND
NC(GND)
*Note: Please check the Application Note for 700MHz Band
- 2 -
NJG1138HA8
ABSOLUTE MAXIMUM RATINGS Ta=+25°C, Zs=Zl=50
PARAMETERS
SYMBOL
CONDITIONS
RATINGS
UNITS
Supply voltage
VDD
5.0
V
Control voltage
VCTL
5.0
V
Input power
PIN
+15
dBm
Power dissipation
PD
on PCB board, Tjmax=150°C
150
mW
Operating temperature
Topr
-40~+85
°C
Storage temperature
Tstg
-55~+150
°C
ELECTRICAL CHARACTERISTICS 1 (DC) (General Conditions: VDD=2.8V, Ta=+25oC)
PARAMETERS
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Operating voltage
VDD
2.5
2.8
3.6
V
Control voltage (High)
VCTL(H)
VCTL terminal
1.36
1.8
3.6
V
Control voltage (Low)
VCTL(L)
VCTL terminal
0
0
0.3
V
Operating current1
(High Gain Mode)
IDD1
RF OFF, VCTL=1.8V
-
2.3
4.0
mA
Operating current2
(Low Gain Mode)
IDD2
RFOFF, VCTL=0V
-
10
45
μA
Control current
ICTL
RF OFF, VCTL=1.8V
-
5.5
8.5
μA
NJG1138HA8
- 3 -
ELECTRICAL CHARACTERISTICS 2 (High Gain Mode)
(General Conditions: VDD=2.8V, VCTL=1.8V, fRF=942.5MHz, Zs=Zl=50 , Ta=+25oC, with application circuit)
PARAMETERS
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Small signal gain 1
Gain1
Exclude PCB and connector
losses
(input: 0.07dB, output: 0.07dB)
14.5
16.0
17.5
dB
Noise figure 1
NF1
Exclude PCB and connector
losses (input:0.07dB)
-
1.4
1.7
dB
Input power at 1dB gain
compression point 1
P-1dB(IN)1
-16.0
-8.5
-
dBm
3rd order Input
Intercept Point 1
IIP3_1
f1=fRF, f2=fRF+100kHz,
Pin=-30dBm
-7.0
0
-
dBm
RF IN VSWR 1
VSWRI 1
-
1.8
2.3
-
RF OUT VSWR 1
VSWRo1
-
2.2
2.7
-
ELECTRICAL CHARACTERISTICS 3 (Low Gain Mode)
(General Conditions: VDD=2.8V, VCTL=0V, fRF=942.5MHz, Zs=Zl=50 , Ta=+25oC, with application circuit)
PARAMETERS
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Small signal gain 2
Gain2
Exclude PCB and connector
losses
(input: 0.07dB, output: 0.07dB)
-4.5
-3.0
-2.0
dB
Noise figure 2
NF2
Exclude PCB and connector
losses (input:0.07dB)
-
3.0
6.0
dB
Input power at 1dB gain
compression point 1
P-1dB(IN)2
+4.5
+16.0
-
dBm
3rd order Input
Intercept Point 2
IIP3_2
f1=fRF, f2=fRF+100kHz,
Pin=-20dBm
+2.0
+14.0
-
dBm
RF IN VSWR 2
VSWRI 2
-
1.4
2.0
-
RF OUT VSWR 2
VSWRo2
-
1.6
2.2
-
- 4 -
NJG1138HA8
TERMINAL INFORMATION
Notes: Ground terminal (No.3 and 5) and NC terminal (No.6) should be connected with the PCB ground
for good RF performance.
No.
SYMBOL
DESCRIPTION
1
VCTL
Gain control port. Inputting a logic-high, the LNA turn at high gain mode.
Inputting a logic-low, the LNA turn at low gain mode.
2
RFOUT
RF output terminal. Requires an external matching components. This
terminal should be connected a DC blocking capacitor C1.
3
GND
Ground terminal. Connect to the PCB ground plane.
4
RFIN
RF input terminal. Requires an external matching components.
5
GND
Ground terminal. Connect to the PCB ground plane.
6
NC
(GND)
No connected terminal. This terminal is not connected with internal circuit.
Connect to the PCB ground plane.
NJG1138HA8
- 5 -
ELECTRICAL CHARACTERISTICS (High Gain Mode)
(General Conditions: VDD=2.8V, VCTL=1.8V, fRF=942.5MHz, Zs=Zl=50 , Ta=+25oC, with application circuit)
-25
-20
-15
-10
-5
0
5
10
-40 -30 -20 -10 0 10
NJG1138HA8 @High Gain
Pout vs. Pin
(f=942.5MHz)
Pin (dBm)
Pout
Pout (dBm)
P-1dB(IN)=-7.7dBm
-5
0
5
10
15
20
-40 -30 -20 -10 0 10
NJG1138HA8 @High Gain
Gain, IDD vs. Pin
(f=942.5MHz)
0
2
4
6
8
10
Pin (dBm)
IDD
Gain (dB)
P-1dB(IN)=-7.7dBm
Gain
IDD (mA)
0
0.5
1
1.5
2
2.5
3
3.5
4
4
6
8
10
12
14
16
18
20
800 850 900 950 1000 1050 1100
NF (dB)
Gain (dB)
frequency (MHz)
NF
Gain
NJG1138HA8@High Gain
NF, Gain vs. frequency
(f=800~1100MHz)
(Exclude PCB, Connector Losses)
-100
-80
-60
-40
-20
0
20
-40 -30 -20 -10 0 10
NJG1138HA8 @High Gain
Pout, IM3 vs. Pin
(f1=942.5MHz, f2=f1+100kHz)
Pin (dBm)
IM3
Pout, IM3 (dBm)
IIP3=-0.4dBm
Pout
10
11
12
13
14
15
16
17
18
900 920 940 960 980 1000
NJG1138HA8 @High Gain
OIP3, IIP3 vs. frequency
(f1=900~1000MHz, f2=f1+100kHz, Pin=-30dBm)
-2
-1
0
1
2
3
4
5
6
frequency (MHz)
IIP3
OIP3 (dBm)
OIP3
IIP3 (dBm)
0
5
10
15
20
0 5 10 15 20
NJG1138HA8 @High Gain
k factor vs. frequency
(f=50MHz~20GHz)
frequency (GHz)
k factor
- 6 -
NJG1138HA8
ELECTRICAL CHARACTERISTICS (High Gain Mode)
(General Conditions: VDD=2.8V, VCTL=1.8V, fRF=942.5MHz, Zs=Zl=50 , Ta=+25oC, with application circuit)
10
11
12
13
14
15
16
17
18
2 2.5 3 3.5 4 4.5
NJG1138HA8 @High Gain
Gain, NF vs. VDD
(f=942.5MHz)
0
0.5
1
1.5
2
2.5
3
3.5
4
VDD (V)
Gain
Gain (dB)
NF
NF (dB)
(Exclude PCB, Connector Losses)
11
12
13
14
15
16
17
18
19
2 2.5 3 3.5 4 4.5
NJG1138HA8 @High Gain
OIP3, IIP3 vs. VDD
(f1=942.5MHz, f2=f1+100kHz, Pin=-30dBm)
-3
-2
-1
0
1
2
3
4
5
VDD (V)
OIP3
OIP3 (dBm)
IIP3 (dBm)
IIP3
-10
-9
-8
-7
-6
-5
-4
-3
-2
2 2.5 3 3.5 4 4.5
NJG1138HA8 @High Gain
P-1dB(IN) vs. VDD
(f=942.5MHz)
VDD (V)
P-1dB(IN)
P-1dB(IN) (dBm)
0
0.5
1
1.5
2
2.5
3
3.5
4
2 2.5 3 3.5 4 4.5
NJG1138HA8 @High Gain
VSWRi, VSWRo vs. VDD
(f=942.5MHz)
VDD (V)
VSWRi
VSWRi, VSWRo
VSWRo
0
0.5
1
1.5
2
2.5
3
3.5
4
2 2.5 3 3.5 4 4.5
NJG1138HA8 @High Gain
IDD vs. VDD
(RF OFF)
VDD (V)
IDD
IDD (mA)
NJG1138HA8
- 7 -
ELECTRICAL CHARACTERISTICS (High Gain Mode)
(General Conditions: VDD=2.8V, VCTL=1.8V, fRF=942.5MHz, Zs=Zl=50 , with application circuit)
11
12
13
14
15
16
17
18
19
-60 -40 -20 0 20 40 60 80 100
NJG1138HA8 @High Gain
Gain, NF vs. Temperature
(f=942.5MHz)
0
0.5
1
1.5
2
2.5
3
3.5
4
Temperature (oC)
Gain
Gain (dB)
NF
NF (dB)
(Exclude PCB, Connector Losses)
10
11
12
13
14
15
16
17
18
-60 -40 -20 0 20 40 60 80 100
NJG1138HA8 @High Gain
OIP3, IIP3 vs. Temperature
(f1=942.5MHz, f2=f1+100kHz, Pin=-30dBm)
-4
-3
-2
-1
0
1
2
3
4
Temperature (oC)
OIP3
OIP3 (dBm)
IIP3 (dBm)
IIP3
-16
-14
-12
-10
-8
-6
-4
-2
0
-60 -40 -20 0 20 40 60 80 100
NJG1138HA8 @High Gain
P-1dB(IN) vs. Temperature
(f=942.5MHz)
Temperature (oC)
P-1dB(IN)
P-1dB(IN) (dBm)
0
0.5
1
1.5
2
2.5
3
3.5
4
-60 -40 -20 0 20 40 60 80 100
NJG1138HA8 @High Gain
VSWRi, VSWRo vs. Temperature
(f=942.5MHz)
Temperature (oC)
VSWRi
VSWRi, VSWRo
VSWRo
0
0.5
1
1.5
2
2.5
3
3.5
4
-60 -40 -20 0 20 40 60 80 100
NJG1138HA8 @High Gain
IDD vs. Temperature
(RF OFF)
Temperature (oC)
IDD
IDD (mA)
- 8 -
NJG1138HA8
ELECTRICAL CHARACTERISTICS (High Gain Mode)
(General Conditions: VDD=2.8V, VCTL=1.8V, fRF=942.5MHz, Zs=Zl=50 , Ta=+25oC, with application circuit)
S11, S22
VSWR
Zin, Zout
S11, S22
(f=50MHz~20GHz)
S21, S12
(f=50MHz~20GHz)
S21, S12
NJG1138HA8
- 9 -
ELECTRICAL CHARACTERISTICS (Low Gain Mode)
(General Conditions: VDD=2.8V, VCTL=0V, fRF=942.5MHz, Zs=Zl=50 , Ta=+25oC, with application circuit)
-50
-40
-30
-20
-10
0
10
20
-40 -30 -20 -10 0 10 20
NJG1138HA8 @Low Gain
Pout vs. Pin
(f=942.5MHz)
Pin (dBm)
Pout
Pout (dBm)
P-1dB(IN)=+16.1dBm
-14
-12
-10
-8
-6
-4
-2
-40 -30 -20 -10 0 10 20
NJG1138HA8 @Low Gain
Gain, IDD vs. Pin
(f=942.5MHz)
0
40
80
120
160
200
240
Pin (dBm)
IDD
Gain (dB)
P-1dB(IN)=+16.1dBm
Gain
IDD (uA)
0
2
4
6
8
10
-12
-10
-8
-6
-4
-2
800 850 900 950 1000 1050 1100
NF (dB)
Gain (dB)
frequency (MHz)
NF
Gain
NJG1138HA8@Low Gain
NF, Gain vs. frequency
(f=800~1100MHz)
(Exclude PCB, Connector Losses)
-100
-80
-60
-40
-20
0
20
-40 -30 -20 -10 0 10 20
NJG1138HA8 @Low Gain
Pout, IM3 vs. Pin
(f1=942.5MHz, f2=f1+100kHz)
Pin (dBm)
IM3
Pout, IM3 (dBm)
IIP3=+16.7dBm
Pout
4
6
8
10
12
14
16
900 920 940 960 980 1000
NJG1138HA8 @Low Gain
OIP3, IIP3 vs. Pin
(f1=900~1000MHz, f2=f1+100kHz, Pin=-20dBm)
12
14
16
18
20
22
24
frequency (MHz)
IIP3
OIP3 (dBm)
OIP3
IIP3 (dBm)
0
5
10
15
20
0 5 10 15 20
NJG1138HA8 @Low Gain
k factor vs. frequency
(f=50MHz~20GHz)
frequency (GHz)
k factor
- 10 -
NJG1138HA8
ELECTRICAL CHARACTERISTICS (Low Gain Mode)
(General Conditions: VDD=2.8V, VCTL=0V, fRF=942.5MHz, Zs=Zl=50 , Ta=+25oC, with application circuit)
-6
-5
-4
-3
-2
-1
0
1
2
2 2.5 3 3.5 4 4.5
NJG1138HA8 @Low Gain
Gain, NF vs. VDD
(f=942.5MHz)
-2
-1
0
1
2
3
4
5
6
VDD (V)
Gain
Gain (dB)
NF
NF (dB)
(Exclude PCB, Connector Losses)
8
10
12
14
16
18
20
22
24
2 2.5 3 3.5 4 4.5
NJG1138HA8 @Low Gain
OIP3, IIP3 vs. VDD
(f1=942.5MHz, f2=f1+100kHz, Pin=-20dBm)
4
6
8
10
12
14
16
18
20
VDD (V)
OIP3
OIP3 (dBm)
IIP3 (dBm)
IIP3
12
13
14
15
16
17
18
19
20
2 2.5 3 3.5 4 4.5
NJG1138HA8 @Low Gain
P-1dB(IN) vs. VDD
(f=942.5MHz)
VDD (V)
P-1dB(IN)
P-1dB(IN) (dBm)
0
0.5
1
1.5
2
2.5
3
3.5
4
2 2.5 3 3.5 4 4.5
NJG1138HA8 @Low Gain
VSWRi, VSWRo vs. VDD
(f=942.5MHz)
VDD (V)
VSWRi
VSWRi, VSWRo
VSWRo
2
4
6
8
10
12
14
16
18
2 2.5 3 3.5 4 4.5
NJG1138HA8 @Low Gain
IDD vs. VDD
(RF OFF)
VDD (V)
IDD
IDD (uA)
NJG1138HA8
- 11 -
ELECTRICAL CHARACTERISTICS (Low Gain Mode)
(General Conditions: VDD=2.8V, VCTL=0V, fRF=942.5MHz, Zs=Zl=50 , with application circuit)
1
-9
-8
-7
-6
-5
-4
-3
-2
-1
-60 -40 -20 0 20 40 60 80 100
NJG1138HA8 @Low Gain
Gain, NF vs. Temperature
(f=942.5MHz)
1
2
3
4
5
6
7
8
9
Temperature (oC)
Gain
Gain (dB)
NF
NF (dB)
(Exclude PCB, Connector Losses)
8
10
12
14
16
18
20
22
24
-60 -40 -20 0 20 40 60 80 100
NJG1138HA8 @Low Gain
OIP3, IIP3 vs. Temperature
(f1=942.5MHz, f2=f1+100kHz, Pin=-20dBm)
4
6
8
10
12
14
16
18
20
Temperature (oC)
OIP3
OIP3 (dBm)
IIP3 (dBm)
IIP3
6
8
10
12
14
16
18
20
22
-60 -40 -20 0 20 40 60 80 100
NJG1138HA8 @Low Gain
P-1dB(IN) vs. Temperature
(f=942.5MHz)
Temperature (oC)
P-1dB(IN)
P-1dB(IN) (dBm)
0
0.5
1
1.5
2
2.5
3
3.5
4
-60 -40 -20 0 20 40 60 80 100
NJG1138HA8 @Low Gain
VSWRi, VSWRo vs. Temperature
(f=942.5MHz)
Temperature (oC)
VSWRi
VSWRi, VSWRo
VSWRo
2
4
6
8
10
12
14
16
18
-60 -40 -20 0 20 40 60 80 100
NJG1138HA8 @Low Gain
IDD vs. Temperature
(RF OFF)
Temperature (oC)
IDD
IDD (uA)
- 12 -
NJG1138HA8
ELECTRICAL CHARACTERISTICS (Low Gain Mode)
(General Conditions: VDD=2.8V, VCTL=0V, fRF=942.5MHz, Zs=Zl=50 , Ta=+25oC, with application circuit)
S11, S22
S21, S12
VSWR
Zin, Zout
S11, S22
(f=50MHz~20GHz)
S21, S12
(f=50MHz~20GHz)
NJG1138HA8
- 13 -
APPLICATION CIRCUIT
TEST PCB LAYOUT
Parts ID
Comments
L1, L2
Murata
LQP03T Series
L3
TDK
MLK0603 Series
C1, C2
Murata
GRM03 Series
PCB (FR-4):
t=0.2mm
MICROSTRIP LINE WIDTH
=0.4mm (Z0=50ohm)
PCB SIZE=17.0mm x 17.0mm
VCTL
RF OUT
RF IN
VDD
L1
C1
L2
L3
C2
(Top View)
(Top View)
L1
12nH
L2
8.2nH
L3
10nH
C1
2pF
C2
0.01uF
RF OUT
VDD
RFIN
VCTL
13
RFIN
Logic
Circuit
RFOUT
GND
Bias
Circuit
2
3
1
4
6
5
VCTL
GND
NC(GND)
1Pin Index
- 14 -
NJG1138HA8
PACKAGE OUTLINE (USB6-A8)
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
Do NOT eat or put into mouth.
Do NOT dispose in fire or break up this product.
Do NOT chemically make gas or powder with this product.
To waste this product, please obey the relating law of your country.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle
with care to avoid these damages.
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.
Photo resist coating
TERMINAL TREAT :Au
Substrate :Glass epoxy
Molding material :Epoxy resin
UNIT :mm
WEIGHT :1.1mg
0.2 (MIN0.15)
1.20.05
0.8
0.4
0.20.04
6
R0.05
5
1
4
2
3
0.4
1.00.05
0.20.07
0.20.04
0.6
0.10.05
C0.1
0.380.06
0.038-0.009
+0.012
S
0.03
S
