SIEMENS AKTIENGESELLSCHAF SIEMENS 4?7E D WM 8235605 OOe?ede 9 MBSIEG SFH601 SERIES PHOTOTRANSISTOR OPTOCOUPLER WF HI- BS FEATURES Highest Quality Premium Device Built to Conform to VDE Requirements Long Term Stability High Current Transfer Ratios, 4 Groups SFH 601-1, 40 to 80% SFH 601-2, 63 to 125% SFH 601-3, 100 to 200% SFH 601-4, 160 to 320% 5300 Volt Isolation (1 Minute) Storage Temperature 40 to + 150C VCE ga 0.25 (<0.4) Volt at Ip = 10 mA, I =2.5 mA UL Approval #E52744 & VDE Approval #0883 [ VDE Approval #0884 (Optional with Option 1, add -X001 suffix) CECC Approved DESCRIPTION The SFH601 Is an optocoupler that is com- prised of a GaAs LED emitter which Is optically coupled with a silicon planar phototransistor detector. The component is packaged in a plastic plug-in case 20 AB DIN 41866 The coupler transmits signals between two electrically isolated circuits. The potential difference between the circuits to be coupled is not allowed to exceed the maxi- mum permissible insulating voltage e Package Dimension in Inches (mm) 077. Zoi (7Ay 256165) A616.) fi fe] avore [i] 6] pase Ez [st catuone [2] le ] couector 8} ra] we [3] [a] eure Maximum Ratings Reverse Voltage (Vp) ev Forward Current {lp). .. 60 mA Surge Current (lrg), tp= 10 4s 2.54 Power Dissipation (Prot) 100 mW Detector (Sllicon Photctransistor} Collector-Emutter Voltage (Vor) 7OV Emitter Base Reverse Voltage (Vega) 7v Collector Current (Iq) on - SOMA Collector Current (igg} t= 1 ms 100 mA Powar Dissipation (Pigs) 150 mw Coupler Storage Temperature (Tete) - -40 to +150C Ambient Temperature (Tamp) -~40 to +100C Junction Temperature (T)) 100C Soldering Temperature ap, 10s Max 260C Isolation Test Voltage (V,,), 1 Min per VDE 0883 5300 VDC (between emitter and detector referred to standard climate 23/50 DIN 50014} Tracking Resistance Min 82mm Aur Path Min 7 3 mm Tracking Resistance Group HI (KC = >600) In accordance with VDE 0110 6 Table 3 and DIN 53480/VDE 0303, Part 1 As to nominal isolation voltage DIN 57883 or VDE 0883 applies Isolation Resistance (Rjg) at Vig = 500 V 109 Climatic Conditions DIN 40040, hurnidily Class F Flammability DIN 57471 ar VDE 0471, Part 2, of April 1975 or MIL202E, Mathod 11 A 5-118 STEMENS AKTIENGESELLSCHAF 4Y?E D = 86235605 0027243 O MBSIEG T-41-83 Characteristics (Tamb = 25 C) Linear Operation (without saturation} Emitter (GaAs LED) 1 Forward Voltage (Vp), Ip =60 mA 125(5165)V fy R=7SQ Breakdown Voltage (Van), Ip = 100 pA 30(>6) V o___, Vip = BV Reverse Current (Ip), Va =3 001(= 10) yA G == ia Capacitance (CQ) o co (WR=OV, f= 1 MHz) 40 pF 0) | Thermal Resistance (Rin jamb?) 750 KW Lo, Detector (Silicon Phototransistor) Capacitance (Vgp =5 V, f= 1 MHz) Coe 68 pF f=10 mA, Vyp=5 V, Tyger Cos 85 pF Cea . 11 pF Load Resistance R. 75 Qa Thermal Resist: R 500 KW ermal Resistance thJamb) Turn-On Time toy 30 (<56) us Coupler Collector-Emitter Saturation Voltage (Vcesat) Rise Time 4, 20 (<4.0) us (lp = 10 MA, Io =25 MA) 025(<04)V Turn-Off Time lyr 23 (84 1) us 30 pF Coupling Capacitance (Cx) 030p Fail Time t 2.0 (535) ys The optocouplers are grouped according to their current transfer Cut-Off Frequency Foo 250 kHz ratio [./l, at V_.=5 V, marked by dash numbers -1 -2 3 -4 . : Switching Operation (with saturation) IAL (I= 10 mA) 40-80 63-125 100 -200 | 160-320 % l/l (,=1 mA) 30{>13) | 45(>22) | 70(>34) | 90(>58) | % wt - 1k) Va = 5 V Collec tor-Emitter or 2 TTL inputs Leakage Current 2 (s50} 2 (S50) 6 ($100) | 5(s100) nA ~ with a27kQ _ (MVoe=10 V) Uloeg) 7 pull-up resistor g co ees a3 +5V ge aa a 2742 TTL levels are - =TTL observed but no TEL switching times ' oe Group -1 -2 and -3 ~4 (1,=20 mA) (=10mA) | (=5mA) Turn-On Time, 30 ($5.5) 42 {s8Q) 60 (<10 ) ps Rise Time L 20 (s4.0) 30 (S60) 4.6 (580) ps Turn-Off Time 1, 18 (<34) 23 (S39) 25 ($43) us Fall Time t 11 (s20) 14 (24) 15 ($26) ps Vecsar 025 (<0 4) Vv 5-119 SFH 601 STEMENS AKTIENGESELLSCHAF 47E D MM 4235605 0027284 2? MESIEG Minimum current transfer ratio #8 a function of diode current func (Tamy = 25C, Vee = 5 VY) % e = fitted % 300 J 10 ay i F Ul 5 200 2 yi "4 | 5 100 y 3 7 yy a 4 21 | > He 0 H 10" 197 100 101 102 ma 2 /; Current transfer ratio a8 a function of diode currant (7am, = 25C) Current transfer ratio as 4 Current transfer ratio asp function of diode currant (7 ymk = 50%) T-41-83 Currant transfer ratio as a * function of diode current (Tam. = OC) te 7 Fife) tion of diode current {7,,., = 25C} Vor =5V Vor =5V 4 Ul 5 m2 5 +I, to! 2 ma w2 5 ww +l, 2 mA Current transfer ratio as 0 function of diode current (7ym. = 75C) = = i = 4 ry Voe=5V fru Vor =5V =H Voe=6 F % 403 ae fs 2 2 102 5 2 19! - wt2 5 0 2 5 OW 2mA fo 2 5 W2 5 wl 2ma or? 5 2 5 Wf 2mA ok fe te Current transfer ratio as 3 Tranststor characteristics (8 = 550) function of temperature fe = Aee) (Tamp = 25C Ip =O) de =f(7 i (lps ims Vee =5 Vv} % fe te 103 ff {SEE 2 10? peepee pe 5 2 I oy 19) bel sds dita 25 Q 25 50 75C e; SFH 601 5-120 SIEMENS AKTIENGESELLSCHAF U?E D Output characteristles |, = {(V,) (lamb = 25C} TOO fee ima, [ips 2mA] amenairsi TT ger tT ae st ste a 5 10 6V Var Saturation voltage as a function of collector current and modula- tion depth for SFH 601-2 Yor sat = lle) lamp = 25C) Wry psy YOR sat al Os o7 0s oS o4 03 az 1 0 19 5 10! * fp jo! ma Permissible pulse load V = parameter Top = 25C ip = f(t) mA 10 wo! 10 0) 10 +T Ws Forward voltage V_ = i(/-) Saturation voltage as a function of collector current and modula- tion depth for SFH 601-3 VV cE sat = flo) Tam = 25C) 10 P es etsa: OF 1 ff ferte opt2 tla | tH n | I 1 ' 1 oT he ~ 7 tot OB 1 | t boast | 05 i | {oe wi HP | + [pn txt oa A mere | 02 L ate le ae [ ah} + tt Lt Les | hd 19 5 0 5 1mA ty Permissible loss transistor Prot = f(Tamp/ mW 20000 -y = os Poa | 150 100 50 - o | - Tome Collector-emitter off-state current loco = FV 1) Tams = 25C I; = 0) Vcg= 405. | Vo= 10 10" : Vet sat ore a 0 3 SD 7 T Saturation voltage as a function of collector curtent and modula- tion depth for SFH 601-4 V Vg sat = Filg) (Tamy = 25C) Wears - PET | Votes 08 Un oH oa+ --ty | Se 1 1 Lif! + poll c ! hele 0 fp" Bele | F* oxic, \ ate rt atayed pee te oh 0 yar 5 10 5 Permissible loss diade Pio = Fam? ma 120 7 ey eT Ie Varlation of current transfer ratio as a function of load time 7 FQ F Saturation voltage as a function of collector current and modula- tion depth for SFH 607-1 y Vee sat = File) Tam * 25C) I fps Bade Diode capacitance C = f(Vp) Camp = 25C, f = 1 MHz) peor om ot ee be 1 yp rh Llp wlll kh ely wt u ry ay - =M Transistor capacitances C = fo} (Tamp = 25C f= 1 MHz) % 10 T | l Vee = 5V fc i i} A, =1kQ 7 heap ptr | Tomo = 25C [: Wali ip = 60mA 1 100 | i! Un eH Measuring current = 10 mA == my mi 9% Confidence coefficient et Lil = pom { } i Pt 50% Ld Tt Lyi | | te 90 . +> EtlP 15% HiT i i | | SiR ll ow LUTE 1 Ul LH 1 107 0 ooh MB 8235605 0027755 4 MBSIEG T-41-83 Optocouplers (Optoisolators) SFH 601 |