MJF3055 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data



  

. . . specifically designed for general purpose amplifier and switching applications.

•Isolated Overmold Package (1500 Volts RMS Min)

•Electrically Similar to the Popular MJE3055T and MJE2955T

•Collector–Emitter Sustaining Voltage — VCEO(sus) 90 Volts

•10 Amperes Rated Collector Current

•No Isolating Washers Required

•Reduced System Cost

•UL Recognized, File #E69369, to 3500 VRMS Isolation

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎ

Value

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage

ÎÎÎÎÎÎ

VCEO(sus)

ÎÎÎÎÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Breakdown Voltage

ÎÎÎÎÎÎ

VCES

ÎÎÎÎÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Voltage

ÎÎÎÎÎÎ

VEBO

ÎÎÎÎÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

ÎÎÎÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current — Continuous

ÎÎÎÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

RMS Isolation Voltage (3) Test No. 1 Per Fig. 4

(for 1 sec, R.H. < 30%, Test No. 2 Per Fig. 5

TA = 25

C) Test No. 3 Per Fig. 6

ÎÎÎÎÎÎ

VISOL

ÎÎÎÎÎÎÎ

4500

3500

1500

ÎÎÎÎ

VRMS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25

C (2)

Derate above 25

ÎÎÎÎÎÎ

ÎÎÎÎÎÎÎ

0.25

ÎÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TA = 25

Derate above 25

ÎÎÎÎÎÎ

ÎÎÎÎÎÎÎ

0.016

ÎÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Temperature Range

ÎÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎ

–55 to +150

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance — Junction to Case (2)

ÎÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎÎ

ÎÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance — Junction to Ambient

ÎÎÎÎÎÎ

RθJA

ÎÎÎÎÎÎÎ

62.5

ÎÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Lead Temperature for Soldering Purposes

ÎÎÎÎÎÎ

ÎÎÎÎÎÎÎ

260

ÎÎÎÎ

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

10%.

(2) Measurement made with thermocouple contacting the bottom insulated surface (in a location beneath the die), the devices mounted on a

(2) heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs.

(3) Proper strike and creepage distance must be provided.



SEMICONDUCTOR TECHNICAL DATA Order this document

by MJF3055/D

 Motorola, Inc. 1995





COMPLEMENTARY

SILICON

POWER TRANSISTORS

10 AMPERES

90 VOLTS

30 WATTS





CASE 221D–02

TO–220 TYPE

 

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (IC = 200 mAdc, IB = 0)

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current (VCE = 90 Vdc, VBE = 0)

ÎÎÎÎ

ICES

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current (VCE = 90 Vdc, IE = 0)

ÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Leakage (VEB = 5 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (ICE = 4 Adc, VCE = 4 Vdc)

DC Current Gain (ICE = 10 Adc, VCE = 4 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

100

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 4 Adc, IB = 0.4 Adc)

(IC = 10 Adc, IB = 3.3 Adc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

2.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage (IC = 4 Adc, VBE = 4 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

1.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain–Bandwidth Product

(VCE = 10 Vdc, IC = 0.5 Adc, ftest = 500 kHz)

ÎÎÎÎ

—

ÎÎÎ

MHz

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

10%.

IC, COLLECTOR CURRENT (AMPS)

0.01 IC, COLLECTOR CURRENT (AMP)

50.05 0.1 2

500

hFE, DC CURRENT GAIN

VCE = 2 V

TJ = 150

–55

0.02 0.2 0.5 1

300

200

100

IC, COLLECTOR CURRENT (AMP)

1.4

1.2

0.8

IC, COLLECTOR CURRENT (AMP)

1.6

1.2

0.8

0.4

Figure 1. Maximum Forward Bias Safe

Operating Area Figure 2. DC Current Gain

Figure 3. “On” Voltages

0.2

0.4

0.2 10.5 100.1 0.3 32 5

0.6

V, VOLTAGE (VOLTS)

100

1VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.3

2 100

0.5

CURRENT LIMIT

SECONDARY BREAKDOWN LIMIT

THERMAL LIMIT @ TC = 25

(SINGLE PULSE)

3 5 10 20

0.2 30

5 ms

50 5 10

VBE(sat) @ IC/IB = 10

VBE @ VCE = 3 V

PNP

MJF3055

PNP

MJF2955

TJ = 25

0.2 10.5 100.1 0.3 32 5

TJ = 150

C1 ms

VCE(sat) @ IC/IB = 10

TJ = 25

VBE(sat) @ IC/IB = 10

VBE @ VCE = 2 V

VCE(sat) @ IC/IB = 10

 

Motorola Bipolar Power Transistor Device Data

MOUNTED

FULLY ISOLATED

PACKAGE

LEADS

HEATSINK

0.110” MIN

Figure 4. Clip Mounting Position

for Isolation Test Number 1

*Measurement made between leads and heatsink with all leads shorted together

CLIP CLIP 0.107” MIN LEADS

HEATSINK

0.107” MIN

Figure 5. Clip Mounting Position

for Isolation Test Number 2 Figure 6. Screw Mounting Position

for Isolation Test Number 3

MOUNTED

FULLY ISOLATED

PACKAGE

MOUNTED

FULLY ISOLATED

PACKAGE

LEADS

HEATSINK

TEST CONDITIONS FOR ISOLATION TESTS*

4–40 SCREW

PLAIN WASHER

HEATSINK

COMPRESSION WASHER

NUT

CLIP

HEATSINK

Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw

torque of 6 to 8 in .lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a con-

stant pressure on the package over time and during large temperature excursions.

Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in .lbs will

cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.

Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in .lbs without adversely affecting the pack-

age. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10

in .lbs of mounting torque under any mounting conditions.

Figure 7. Typical Mounting Techniques*

MOUNTING INFORMATION

**For more information about mounting power semiconductors see Application Note AN1040.

 

4 Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 221D–02

TO–220 TYPE

ISSUE D

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

STYLE 2:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

DIM

AMIN MAX MIN MAX

MILLIMETERS

0.621 0.629 15.78 15.97

INCHES

B0.394 0.402 10.01 10.21

C0.181 0.189 4.60 4.80

D0.026 0.034 0.67 0.86

F0.121 0.129 3.08 3.27

G0.100 BSC 2.54 BSC

H0.123 0.129 3.13 3.27

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.14 1.52

N0.200 BSC 5.08 BSC

Q0.126 0.134 3.21 3.40

R0.107 0.111 2.72 2.81

S0.096 0.104 2.44 2.64

U0.259 0.267 6.58 6.78

–B–

–Y–

3 PL

1 2 3

0.25 (0.010) Y

SEATING

PLANE

–T–

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MJF3055/D

*MJF3055/D*

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