AH215 The Communications Edge TM 1 Watt, High Linearity InGaP HBT Amplifier Product Features Product Information Product Description * 400 - 2300 MHz Functional Diagram The AH215 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve superior performance for various narrowband-tuned application circuits with up to +46 dBm OIP3 and +31.5 dBm of compressed 1-dB power. The part is housed in a lead-free/green/RoHS-compliant SOIC-8 package. All devices are 100% RF and DC tested. * +31.5 dBm P1dB * +46 dBm Output IP3 * 18 dB Gain @ 900 MHz * +5V Single Positive Supply * MTTF > 100 Years The product is targeted for use as driver amplifier for * Lead-free/green/RoHS-compliant various current and next generation wireless technologies such as GPRS, GSM, CDMA, W-CDMA, and UMTS, SOIC-8 SMT Pkg. where high linearity and high power is required. The internal active bias allows the AH215 to maintain high Applications linearity over temperature and operate directly off a +5 V supply. Parameters Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Noise Figure IS-95 Channel Power @ -45 dBc ACPR, 1960MHz wCDMA Channel Power @ -45 dBc ACPR, 2140 MHz Operating Current Range , Icc (3) Device Voltage, Vcc 8 2 7 3 6 4 5 Function Vref Input Output Vbias GND N/C or GND * Final stage amplifiers for Repeaters * Mobile Infrastructure Specifications (1) 1 Pin No. 1 3 6, 7 8 Backside Paddle 2, 4, 5 Typical Performance (4) Units Min MHz MHz dB dB dB dBm dBm dB Typ 400 10 +29 +43.8 +25.5 dBm +23 400 Parameters 2300 Frequency Gain S11 S22 Output P1dB Output IP3 IS-95A Channel Power 2140 11 18 8 +31.5 +45 6.3 dBm mA V Max 450 5 Units @ -45 dBc ACPR wCDMA Channel Power @ -45 dBc ACPR Noise Figure Supply Bias 500 Typical MHz dB dB dB dBm dBm 900 18 -13 -7 +31 +46 1960 12 -11 -10 +32 +46 dBm +25.5 +25.5 dBm dB 2140 11 -18 -8 +31.5 +45 +23 7.0 5.5 6.2 +5 V @ 450 mA 4. Typical parameters reflect performance in a tuned application circuit at +25 C. 1. Test conditions unless otherwise noted: 25 C, +5V Vsupply, 2140 MHz, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. It is expected that the current can increase by an additional 90 mA at P1dB. Pin 1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull 10.8 mA of current when used with a series bias resistor of R1=51 . (ie. total device current typically will be 461 mA.) Absolute Maximum Rating Parameter Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Voltage Device Current Device Power Junction Temperature Rating -40 to +85 C -65 to +150 C +26 dBm +8 V 900 mA 5W +250 C Ordering Information Part No. Description 1 Watt, High Linearity InGaP HBT Amplifier AH215-S8G (lead-free/green/RoHS-compliant SOIC-8 Pkg) AH215-S8PCB900 AH215-S8PCB1960 AH215-S8PCB2140 900 MHz Evaluation Board 1960 MHz Evaluation Board 2140 MHz Evaluation Board Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 1 of 7 September 2005 AH215 The Communications Edge TM 1 Watt, High Linearity InGaP HBT Amplifier Product Information Typical Device Data S-Parameters (Vcc = +5 V, Icc = 450 mA, T = 25 C, calibrated to device leads) S22 DB(GMax) 0. 4 3. 0.8 0 25 0 3. 0 4. 0 4. 5.0 0.2 20 5.0 0.2 10 .0 10.0 5.0 4.0 3.0 2.0 1.0 .0 -2 -0 .6 -0.8 -0.8 .0 -2 .4 -0 Swp Min 0.05GHz -1.0 2.5 -0 .6 2 Swp Min 0.05GHz -1.0 0 1 1.5 Frequency (GHz) -3 . 0.5 0.8 -4 .0 -5 .0 .4 -0 0 0.6 2 -0. 2 -0. -10 0.4 0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0 0 -5 -3 .0 0 5 -4 .0 -5. 0 10 -10. 0.2 15 0.2 10.0 -1 0.0 Gain (dB) 6 0. 2. 0 DB(|S[2,1]|) 30 Swp Max 5.05GHz 0. 4 35 2. 0 1.0 0.8 6 0. Swp Max 5.05GHz 1.0 S11 Gain and Maximum Stable Gain 40 Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The impedance loss plots are shown from 0.05 - 5.05 GHz, with markers placed in 0.5 GHz increments. S-Parameters (Vcc = +5 V, Icc = 450 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) -1.23 -1.01 -1.01 -1.03 -1.21 -1.34 -1.52 -2.00 -2.65 -3.86 -6.72 -14.09 -9.98 -4.27 -2.13 -1.24 -0.82 -177.95 178.17 172.63 163.72 155.20 146.17 136.69 126.65 115.04 97.52 86.05 94.99 166.89 157.68 142.95 130.88 120.68 24.07 19.55 15.55 12.03 9.86 8.11 6.92 6.13 5.80 6.01 6.17 6.15 4.98 2.52 -0.42 -3.40 -6.09 122.55 116.55 112.97 98.68 85.80 73.18 61.43 49.60 37.55 21.48 1.700 -23.83 -52.92 -80.08 -100.8 -116.44 -128.99 -40.25 -39.49 -40.13 -38.83 -39.30 -37.70 -37.73 -37.14 -36.23 -36.45 -34.63 -35.91 -36.75 -39.10 -37.80 -38.58 -39.37 17.32 10.63 15.98 10.31 -4.249 -2.398 -16.27 -14.34 -28.50 -46.08 -68.99 -100.68 -147.66 171.86 123.26 89.55 67.22 -1.26 -1.33 -1.17 -0.93 -0.66 -0.83 -0.95 -1.05 -1.04 -1.11 -1.10 -1.00 -0.77 -0.79 -0.81 -0.84 -0.92 -130.4 -155.43 -169.92 179.61 173.43 168.67 166.34 165.13 164.55 166.24 164.44 162.35 158.42 154.12 149.03 144.09 138.4 Device S-parameters are available for download off of the website at: http://www.wj.com Application Circuit PC Board Layout Circuit Board Material: Top RF layer is .014" Getek, 4 total layers (0.062" thick) for mechanical rigidity 1 oz copper, Microstrip line details: width = .026", spacing = .026" The silk screen markers `A', `B', `C', etc. and `1', `2', `3', etc. are used as placemarkers for the input and output tuning shunt capacitors - C8 and C9. The markers and vias are spaced in .050" increments. Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 2 of 7 September 2005 AH215 The Communications Edge TM 1 Watt, High Linearity InGaP HBT Amplifier Product Information 900 MHz Application Circuit (AH215-S8PCB900) Typical RF Performance at 25 C Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3 900 MHz 18 dB -13 dB -7.0 dB +31 dBm +46 dBm (+15 dBm / tone, 1 MHz spacing) Channel Power (@-45 dBc ACPR, IS-95 9 channels fwd) +25.5 dBm Noise Figure Device / Supply Voltage Quiescent Current (1) 7.0 dB +5 V 450 mA 1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. S11 vs. Frequency S22 vs. Frequency 0 18 -4 -4 16 14 +25C 12 +85C 10 8 840 860 -8 -12 -16 -40C S 2 2 (d B ) 0 S 1 1 (d B ) S 2 1 (d B ) S21 vs. Frequency (MHz) 20 +25C +85C -8 -12 +25C +85C -16 -40C 880 900 920 -20 840 940 -40C 860 Frequency (MHz) 880 900 920 -20 840 940 860 880 Frequency (MHz) Noise Figure vs. Frequency 34 9 32 920 940 ACPR vs. Channel Power P1 dB vs. Frequency 10 900 Frequency (MHz) IS-95, 9 Ch. Fwd, 885 KHz offset, 30 KHz Meas BW, 900 MHz 8 7 +25C +85C 6 860 +25C 28 +85C -40C 26 -40C 5 840 30 -45 +25C -50 +85C -40C -55 -60 -65 880 900 920 24 840 940 860 Frequency (MHz) OIP3 vs. Output Power 880 900 Frequency (MHz) 920 940 -70 19 47 38 O IP 3 (d B m ) 47 O IP 3 (d B m ) 47 41 44 41 16 19 Output Power (dBm) 22 25 44 41 38 38 35 27 +25C, +15 dBm / tone 50 44 26 OIP3 vs. Frequency 50 13 21 22 23 24 25 Output Channel Power (dBm) freq. = 900, 901 MHz, +15 dBm 50 10 20 OIP3 vs. Temperature freq. = 900, 901 MHz, +25C O IP 3 (d B m ) A C P R (d B c ) P 1 d B (d B m ) N F (d B ) -40 35 -40 -15 10 35 Temperature (C ) 60 85 35 840 860 880 900 Frequency (MHz) 920 940 Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 3 of 7 September 2005 AH215 The Communications Edge TM 1 Watt, High Linearity InGaP HBT Amplifier Product Information 1960 MHz Application Circuit (AH215-S8PCB1960) Typical RF Performance at 25 C Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3 1960 MHz 12 dB -11 dB -10 dB +32 dBm +46 dBm (+17 dBm / tone, 1 MHz spacing) Channel Power +25.5 dBm (@-45 dBc ACPR, IS-95 9 channels fwd) Noise Figure Device / Supply Voltage Quiescent Current (1) 5.5 dB +5 V 450 mA 1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. S11 vs. Frequency S22 vs. Frequency 0 16 -5 -5 14 12 +25C -15 -20 -40C 1940 +25C +85C 1950 1960 1970 1980 -25 1930 1990 1940 1950 7 P 1 d B (d B m ) N F (d B ) 1970 1980 -25 1930 1990 5 4 3 +25C 2 +85C 1 -40C 1950 1980 31 29 +25C +85C 25 1930 1990 1940 1950 OIP3 vs. Frequency 1960 1970 1980 1990 freq. = 1960, 1961 MHz, +25C 46 O IP 3 (d B m ) 51 O IP 3 (d B m ) 50 47 43 39 Frequency (MHz) -40C OIP3 vs. Output Power 50 1970 +85C freq. = 1960, 1961 MHz, +15 dBm 55 1960 1980 1990 1990 15 16 17 18 19 20 21 22 23 24 25 26 27 Output Channel Power (dBm) 55 1950 1980 +25C OIP3 vs. Temperature +25C, 15 dBm / tone 40 1970 -40 -45 -50 -55 -60 -65 -70 -75 -80 -85 Frequency (MHz) Frequency (MHz) 45 1960 ACPR vs. Channel Power -40C 1970 1950 IS-95, 9 Ch. Fwd. 885 KHz offset, 30 KHz Meas BW, 1960 MHz 27 1960 1940 Frequency (MHz) 33 6 O IP 3 (d B m ) 1960 35 1940 -40C P1 dB vs. Frequency Noise Figure vs. Frequency 35 1930 +85 C Frequency (MHz) 8 1940 +25 C -15 -40C Frequency (MHz) 0 1930 -10 -20 A C P R (d B c ) 8 1930 -10 +85C 10 S 2 2 (d B ) 0 S 1 1 (d B ) S 2 1 (d B ) S21 vs. Frequency 18 42 38 34 35 30 -40 -15 10 35 Temperature ( C) 60 85 10 12 14 16 18 Output Power (dBm) 20 22 Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 4 of 7 September 2005 AH215 The Communications Edge TM 1 Watt, High Linearity InGaP HBT Amplifier Product Information 2140 MHz Application Circuit (AH215-S8PCB2140) Typical RF Performance at 25 C Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3 2140 MHz 11 dB -18 dB -8.0 dB +31.5 dBm +45 dBm (+15 dBm / tone, 1 MHz spacing) wCDMA Channel Power +23 dBm (@-45 dBc ACLR, 3GPP, TM 1+64 DPCH) Noise Figure Device / Supply Voltage Quiescent Current (1) 6.2 dB +5 V 450 mA 1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. 12 -14 9 +25C +85C 3 2120 2130 -5 -18 -22 +25C +85C -26 -40C 2140 2150 2160 -30 2110 2170 2120 2130 2150 2160 2170 +25C +85C 2140 2150 2160 -40 -45 30 +25C 28 2140 2150 2160 2170 24 2110 +85C -40C -50 +25C -55 2120 2130 2140 2150 2160 2170 +85C -40C OIP3 vs. Temperature OIP3 vs. Frequency freq. = 2140, 2141 MHz, +15 dBm / tone +25C, +15 dBm / tone 19 60 85 50 47 47 44 41 35 2110 24 freq. = 2140, 2141 MHz, 25C 50 O IP 3 (d B m ) O IP 3 (d B m ) 35 20 21 22 23 Output Channel Power (dBm) OIP3 vs. Output Power 38 38 10 35 Temperature (C ) -65 Frequency (MHz) 41 2170 ACPR vs. Channel Power -60 2130 -15 2130 3GPP W-CDMA, Test Model 1+64 DPCH, 5MHz offset, 2140 MHz 26 -40C 44 -40 2120 Frequency (MHz) 32 P 1 d B (d B m ) N F (d B ) 2140 P1 dB vs. Frequency 47 O IP 3 (d B m ) -40C -20 2110 34 Frequency (MHz) 50 +85C Frequency (MHz) Noise Figure vs. Frequency 2120 +25C -40C Frequency (MHz) 9 8 7 6 5 4 3 2 1 0 2110 -10 -15 A C P R (d B c ) 0 2110 0 S 22 (d B) -10 S 11 (d B) S 21 (d B) 15 6 S22 vs. Frequency S11 vs. Frequency S21 vs. Frequency 44 41 38 35 2120 2130 2140 2150 Frequency (MHz) 2160 2170 10 12 14 16 18 Output Power (dBm) 20 22 Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 5 of 7 September 2005 AH215 The Communications Edge TM 1 Watt, High Linearity InGaP HBT Amplifier Product Information Application Note: Reduced Bias Configurations The AH215 can be configured to be operated with lower bias current by varying the bias-adjust resistor - R1. The recommended circuit configurations shown previously in this datasheet have the device operating in Class A operation. Lowering the current has little effect on the gain, OIP3, and P1dB performance of the device, but will slightly lower the ACLR/ACPR performance of the device as shown below. An example of the measured data below represents the AH215 measured and configured for 2.14 GHz applications. It is expected that variation of the bias current for other frequency applications will produce similar performance results. AH215-S8PCB2140 Performance Data R1 (ohms) 51 68 100 130 180 Icq (mA) 450 400 350 300 250 Pdiss (W) 2.25 2.00 1.75 1.50 1.25 P1dB (dBm) +31.0 +30.9 +30.8 +30.6 +30.5 OIP3 (dBm) +47.1 +46.4 +46.4 +45.5 +43.6 2.14GHz Gain vs. Output Power 2.14GHz OIP3 vs. Output Power per Tone 11.5 50 11 10 OIP3 (dBm) Gain (dB) 45 10.5 Idq=450mA 'Class A' Idq=400mA 9.5 Idq=350mA 9 40 Idq=450mA 'Class A' Idq=400mA Idq=350mA 35 Idq=300mA Idq=300mA Idq=250mA Idq=250mA 8.5 30 16 18 20 22 24 26 28 30 32 10 12 14 Output Power (dBm) W-CDMA ACLR vs. Output Channel Power 18 20 22 24 CW PAE vs. Output Power 100 3GPP W-CDMA, Test Model 1 + 64 DPCH, 5 MHz offset Idq=450mA 'Class A' -35 Idq=450mA 'Class A' Idq=400mA Idq=400mA -40 Idq=350mA -45 PAE (%) Idq=350mA ACLR (dBc) 16 Power Out per Tone (dBm) Idq=300mA Idq=250mA -50 Idq=300mA Idq=250mA 10 -55 -60 1 -65 12 14 16 18 20 22 24 16 18 20 22 24 26 28 30 32 CW Tone Power Out (dBm) W-CDMA Channel Power Out (dBm) Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 6 of 7 September 2005 AH215 The Communications Edge TM 1 Watt, High Linearity InGaP HBT Amplifier Product Information AH215-S8G (Lead-Free Package) Mechanical Information This package is lead-free/green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260 C reflow temperature) and lead (maximum 245 C reflow temperature) soldering processes. Product Marking Outline Drawing The component will be marked with an "AH215G" designator with an alphanumeric lot code on the top surface of the package. The obsoleted tin-lead version will have been marked with an "AH215-S8" or "ECP100G" designator. Tape and reel specifications for this part are located on the website in the "Application Notes" section. ESD / MSL Information ESD Rating: Value: Test: Standard: Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 MSL Rating: Level 2 at +260 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. A heatsink underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device can occur without the use of one. 2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 4. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 6. RF trace width depends upon the PC board material and construction. 7. Use 1 oz. Copper minimum. 8. All dimensions are in millimeters (inches). Angles are in degrees. Mounting Configuration / Land Pattern Thermal Specifications Rating Operating Case Temperature (1) Thermal Resistance (2), Rth Junction Temperature (3), Tjc -40 to +85 C 33 C / W 159 C Notes: 1. The amplifier can be operated at 105 C case temperature for up to 1000 hours over its lifetime without degradation in performance and will not degrade device operation at the recommended maximum 85 C case temperature for the rest of its lifetime. 2. The thermal resistance is referenced from the junction-to-case at a case temperature of 85 C. Tjc is a function of the voltage at pins 6 and 7 and the current applied to pins 6, 7, and 8 and can be calculated by: Tjc = Tcase + Rth * Vcc * Icc 3. This corresponds to the typical biasing condition of +5V, 450 mA at an 85C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 C. M T T F (m illio n h rs ) Parameter MTTF vs. GND Tab Temperature 1000000 100000 10000 1000 100 50 60 70 80 90 100 Tab temperature ( C) Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 7 of 7 September 2005