Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 1 of 7 September 2005
AH215
1 Watt, High Linearity InGaP HBT Amplifier Product Information
The Communications Ed
e TM
Product Features
• 400 – 2300 MHz
• +31.5 dBm P1dB
• +46 dBm Output IP3
• 18 dB Gain @ 900 MHz
• +5V Single Positive Supply
• MTTF > 100 Years
• Lead-free/green/RoHS-compliant
SOIC-8 SMT Pkg.
Applications
• Final stage amplifiers for Repeat ers
• Mobile Infrastru cture
Product Description
The AH215 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve superior performance for various
narrowband-tuned application circuits with up to +46 dBm
OIP3 and +31.5 dBm of compressed 1-dB power. The part
is housed in a lead-free/green/RoHS-compliant SOIC-8
package. All devices are 100% RF and DC tested.
The product is targeted for use as driver amplifier for
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, W-CDMA, and UMTS,
where high linearity and high power is required. The
internal active bias allows the AH215 to maintain high
linearity over temperature and operate directly off a +5 V
supply.
Functional Diagram
Function Pin No.
Vref 1
Input 3
Output 6, 7
Vbias 8
GND Backside Paddle
N/C or GND 2, 4, 5
Specifications (1)
Parameters Units Min Typ Max
Operational Bandwidth MHz 400 2300
Test Frequency MHz 2140
Gain dB 10 11
Input Return Loss dB 18
Output Return Loss dB 8
Output P1dB dBm +29 +31.5
Output IP3 (2) dBm +43.8 +45
Noise Figure dB 6.3
IS-95 Channel Power
@ -45 dBc ACPR, 1960MHz dBm +25.5
wCDMA Channel Power
@ -45 dBc ACPR, 2140 MHz dBm +23
Operating Current Range , Icc (3) mA 400 450 500
Device Voltage, Vcc V 5
1. Test conditions unless otherwise noted: 25 ºC, +5V Vsupply, 2140 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 6, 7, and 8. It is expected that the current can increas e by an additional 90 mA at P1dB. Pin 1
is used as a reference voltage for t he internal biasing circuitry. It is ex pected that Pin 1 will pull
10.8 mA of current when used with a series bias resistor of R1=51 Ω. (ie. total device current
typically will be 461 mA.)
Absolute Maximum Rating
Parameter Rating
Operating Case Temperature -40 to +85 °C
Storage Temperature -65 to +150 °C
RF Input Power (continuous) +26 dBm
Device Voltage +8 V
Device Current 900 mA
Device Power 5 W
Junction Temperature +250 °C
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance (4)
Parameters Units Typical
Frequency MHz 900 1960 2140
Gain dB 18 12 11
S11 dB -13 -11 -18
S22 dB -7 -10 -8
Output P1dB dBm +31 +32 +31.5
Output IP3 dBm +46 +46 +45
IS-95A Channel Power
@ -45 dBc ACPR dBm +25.5 +25.5
wCDMA Channel Power
@ -45 dBc ACPR dBm +23
Noise Figure dB 7.0 5.5 6.2
Supply Bias +5 V @ 450 mA
4. Typical parameters reflect performance in a tuned application circuit at +25 °C.
Ordering Information
Part No. Description
AH215-S8G 1 Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
AH215-S8PCB900 900 MHz Evaluation Board
AH215-S8PCB1960 1960 MHz Evaluation Board
AH215-S8PCB2140 2140 MHz Evaluation Board
1
2
3
4
8
7
6
5