Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 1 of 7 September 2005
AH215
1 Watt, High Linearity InGaP HBT Amplifier Product Information
The Communications Ed
g
e TM
Product Features
• 400 – 2300 MHz
• +31.5 dBm P1dB
• +46 dBm Output IP3
• 18 dB Gain @ 900 MHz
• +5V Single Positive Supply
• MTTF > 100 Years
• Lead-free/green/RoHS-compliant
SOIC-8 SMT Pkg.
Applications
• Final stage amplifiers for Repeat ers
• Mobile Infrastru cture
Product Description
The AH215 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve superior performance for various
narrowband-tuned application circuits with up to +46 dBm
OIP3 and +31.5 dBm of compressed 1-dB power. The part
is housed in a lead-free/green/RoHS-compliant SOIC-8
package. All devices are 100% RF and DC tested.
The product is targeted for use as driver amplifier for
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, W-CDMA, and UMTS,
where high linearity and high power is required. The
internal active bias allows the AH215 to maintain high
linearity over temperature and operate directly off a +5 V
supply.
Functional Diagram
Function Pin No.
Vref 1
Input 3
Output 6, 7
Vbias 8
GND Backside Paddle
N/C or GND 2, 4, 5
Specifications (1)
Parameters Units Min Typ Max
Operational Bandwidth MHz 400 2300
Test Frequency MHz 2140
Gain dB 10 11
Input Return Loss dB 18
Output Return Loss dB 8
Output P1dB dBm +29 +31.5
Output IP3 (2) dBm +43.8 +45
Noise Figure dB 6.3
IS-95 Channel Power
@ -45 dBc ACPR, 1960MHz dBm +25.5
wCDMA Channel Power
@ -45 dBc ACPR, 2140 MHz dBm +23
Operating Current Range , Icc (3) mA 400 450 500
Device Voltage, Vcc V 5
1. Test conditions unless otherwise noted: 25 ºC, +5V Vsupply, 2140 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 6, 7, and 8. It is expected that the current can increas e by an additional 90 mA at P1dB. Pin 1
is used as a reference voltage for t he internal biasing circuitry. It is ex pected that Pin 1 will pull
10.8 mA of current when used with a series bias resistor of R1=51 Ω. (ie. total device current
typically will be 461 mA.)
Absolute Maximum Rating
Parameter Rating
Operating Case Temperature -40 to +85 °C
Storage Temperature -65 to +150 °C
RF Input Power (continuous) +26 dBm
Device Voltage +8 V
Device Current 900 mA
Device Power 5 W
Junction Temperature +250 °C
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance (4)
Parameters Units Typical
Frequency MHz 900 1960 2140
Gain dB 18 12 11
S11 dB -13 -11 -18
S22 dB -7 -10 -8
Output P1dB dBm +31 +32 +31.5
Output IP3 dBm +46 +46 +45
IS-95A Channel Power
@ -45 dBc ACPR dBm +25.5 +25.5
wCDMA Channel Power
@ -45 dBc ACPR dBm +23
Noise Figure dB 7.0 5.5 6.2
Supply Bias +5 V @ 450 mA
4. Typical parameters reflect performance in a tuned application circuit at +25 °C.
Ordering Information
Part No. Description
AH215-S8G 1 Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
AH215-S8PCB900 900 MHz Evaluation Board
AH215-S8PCB1960 1960 MHz Evaluation Board
AH215-S8PCB2140 2140 MHz Evaluation Board
1
2
3
4
8
7
6
5
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 2 of 7 September 2005
AH215
1 Watt, High Linearity InGaP HBT Amplifier Product Information
The Communications Ed
g
e TM
Typical Device Data
S-Parameters (Vcc = +5 V, Icc = 450 mA, T = 25 °C, calibrated to device leads)
00.5 11.5 22.5
Freque ncy ( GH z )
Gain and Maximum Stable Gain
-10
-5
0
5
10
15
20
25
30
35
40
Gain (dB)
DB(|S[2,1]|) DB(GMax)
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S11
Swp Max
5.05GHz
Swp Min
0.05GHz
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S22
Swp Max
5.05GHz
Swp Min
0.05GHz
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency,
it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line.
The impedance loss plots are shown from 0.05 – 5.05 GHz, with markers placed in 0.5 GHz increments.
S-Parameters (Vcc = +5 V, Icc = 450 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 -1.23 -177.95 24.07 122.55 -40.25 17.32 -1.26 -130.4
100 -1.01 178.17 19.55 116.55 -39.49 10.63 -1.33 -155.43
200 -1.01 172.63 15.55 112.97 -40.13 15.98 -1.17 -169.92
400 -1.03 163.72 12.03 98.68 -38.83 10.31 -0.93 179.61
600 -1.21 155.20 9.86 85.80 -39.30 -4.249 -0.66 173.43
800 -1.34 146.17 8.11 73.18 -37.70 -2.398 -0.83 168.67
1000 -1.52 136.69 6.92 61.43 -37.73 -16.27 -0.95 166.34
1200 -2.00 126.65 6.13 49.60 -37.14 -14.34 -1.05 165.13
1400 -2.65 115.04 5.80 37.55 -36.23 -28.50 -1.04 164.55
1600 -3.86 97.52 6.01 21.48 -36.45 -46.08 -1.11 166.24
1800 -6.72 86.05 6.17 1.700 -34.63 -68.99 -1.10 164.44
2000 -14.09 94.99 6.15 -23.83 -35.91 -100.68 -1.00 162.35
2200 -9.98 166.89 4.98 -52.92 -36.75 -147.66 -0.77 158.42
2400 -4.27 157.68 2.52 -80.08 -39.10 171.86 -0.79 154.12
2600 -2.13 142.95 -0.42 -100.8 -37.80 123.26 -0.81 149.03
2800 -1.24 130.88 -3.40 -116.44 -38.58 89.55 -0.84 144.09
3000 -0.82 120.68 -6.09 -128.99 -39.37 67.22 -0.92 138.4
Device S-parameters are available for download off of the website at: http://www.wj.com
Application Circuit PC Board Layout
Circuit Board Material: Top RF layer is .014” Getek, 4 total layers (0.062” thick) for mechanical rigidity
1 oz copper, Microstrip line details: width = .026”, spacing = .026”
The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning
shunt capacitors – C8 and C9. The markers and vias are spaced in .050” increments.
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 3 of 7 September 2005
AH215
1 Watt, High Linearity InGaP HBT Amplifier Product Information
The Communications Ed
g
e TM
900 MHz Application Circuit (AH215-S8PCB900)
Typical RF Performance at 25 °C
Frequency 900 MHz
S21 – Gain 18 dB
S11 – Input Return Loss -13 dB
S22 – Output Return Loss -7.0 dB
Output P1dB +31 dBm
Output IP3
(+15 dBm / tone, 1 MHz spacing) +46 dBm
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd) +25.5 dBm
Noise Figure 7.0 dB
Device / Supply Voltage +5 V
Quiescent Current (1) 450 mA
1. This corresponds to the quiescent current or operating current under
small-signal conditions into pins 6, 7, and 8.
S21 vs. Fr e quenc y ( M Hz)
8
10
12
14
16
18
20
840 860 880 900 920 940
Frequency (MHz)
S21 (dB)
+25°C
+85°C
-40°C
S11 vs. Frequency
-20
-16
-12
-8
-4
0
840 860 880 900 920 940
Frequency (MHz)
S11 (dB)
+25°C
+85°C
-40°C
S22 vs. Frequency
-20
-16
-12
-8
-4
0
840 860 880 900 920 940
Frequency (MHz)
S22 (dB)
+25°C
+85°C
-40°C
Noise Fi gure vs. Frequency
5
6
7
8
9
10
840 860 880 900 920 940
Frequency (MHz)
NF (dB)
+25°C
+85°C
-40°C
P1 dB vs. Fre quency
24
26
28
30
32
34
840 860 880 900 920 940
Fre qu ency (MHz)
P1 dB (dBm)
+25°C
+85°C
-40°C
ACPR vs. Channel Power
IS-95, 9 Ch. Fwd, ±885 KHz offset, 30 KHz Meas BW, 900 MHz
-70
-65
-60
-55
-50
-45
-40
19 20 21 22 23 24 25 26 27
Ou tp u t Ch an n el Po wer (d Bm)
ACPR (dBc)
+25°C
+85°C
-40°C
OIP3 vs. Output Power
freq. = 900, 901 MHz, +25°C
35
38
41
44
47
50
10 13 16 19 22 25
Output Power (dBm)
OIP3 (dBm )
O I P3 vs. Temperat ure
freq. = 900, 901 MHz, +15 dBm
35
38
41
44
47
50
-40 -15 10 35 60 85
Temperature (°C )
OIP3 (dBm )
O I P3 v s. Frequenc y
+25°C, +15 dBm / tone
35
38
41
44
47
50
840 860 880 900 920 940
Frequency (MHz)
OIP3 (dBm)
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 4 of 7 September 2005
AH215
1 Watt, High Linearity InGaP HBT Amplifier Product Information
The Communications Ed
g
e TM
1960 MHz Application Circuit (AH215-S8PCB1960)
Typical RF Performance at 25 °C
Frequency 1960 MHz
S21 – Gain 12 dB
S11 – Input Return Loss -11 dB
S22 – Output Return Loss -10 dB
Output P1dB +32 dBm
Output IP3
(+17 dBm / tone, 1 MHz spacing) +46 dBm
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd) +25.5 dBm
Noise Figure 5.5 dB
Device / Supply Voltage +5 V
Quiescent Current (1) 450 mA
1. This corresponds to the quiescent current or operating current under
small-signal conditions into pins 6, 7, and 8.
S21 vs. Frequency
8
10
12
14
16
18
1930 1940 1950 1960 1970 1980 1990
Fre quency (MHz)
S21 (dB)
+25°C
+85°C
-40°C
S11 vs . Fr eque ncy
-25
-20
-15
-10
-5
0
1930 1940 1950 1960 1970 1980 1990
Fre que ncy (MHz)
S11
(
dB
)
+25°C
+85°C
-40°C
S22 vs. Frequency
-25
-20
-15
-10
-5
0
1930 1940 1950 1960 1970 1980 1990
Fre que ncy (M Hz)
S22
(
dB
)
+ 25 °C
+ 85 °C
-40°C
Nois e Fi gu r e vs . Fr eque ncy
0
1
2
3
4
5
6
7
8
1930 1940 1950 1960 1970 1980 1990
Fre que ncy (MHz)
NF (dB)
+25°C
+85°C
-40°C
P1 dB vs. Fr e quency
25
27
29
31
33
35
1930 1940 1950 1960 1970 1980 1990
Fre que ncy (MHz)
P1 dB (dBm)
+25°C
+85°C
-40°C
ACPR vs. Channel Power
IS-95, 9 Ch. Fwd. ±885 KHz offset, 30 KHz Meas BW, 1960 MHz
-85
-80
-75
-70
-65
-60
-55
-50
-45
-40
15 16 17 18 19 20 21 22 23 24 25 26 27
Ou tp u t Ch an n el P o wer (dBm)
ACPR
(
dBc
)
+25°C
+85°C
-40°C
O I P3 vs. Freque ncy
+25°C, 15 dBm / tone
35
40
45
50
55
1930 1940 1950 1960 1970 1980 1990
Fre que ncy (MHz)
OIP3 (dBm)
O I P3 vs. Temper at ure
freq. = 1960, 1961 MHz, +15 dBm
35
39
43
47
51
55
-40 -15 10 35 60 85
Temperature ( °C)
OIP3 (dBm)
OIP3 vs. Output Power
freq. = 1960, 1961 MHz, +25° C
30
34
38
42
46
50
10 12 14 16 18 20 22
Output Power (dBm)
OIP3 (dBm)
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 5 of 7 September 2005
AH215
1 Watt, High Linearity InGaP HBT Amplifier Product Information
The Communications Ed
g
e TM
2140 MHz Application Circuit (AH215-S8PCB2140)
Typical RF Performance at 25 °C
Frequency 2140 MHz
S21 – Gain 11 dB
S11 – Input Return Loss -18 dB
S22 – Output Return Loss -8.0 dB
Output P1dB +31.5 dBm
Output IP3
(+15 dBm / tone, 1 MHz spacing) +45 dBm
wCDMA Channel Power
(@-45 dBc ACLR, 3GPP, TM 1+64 DPCH) +23 dBm
Noise Figure 6.2 dB
Device / Supply Voltage +5 V
Quiescent Current (1) 450 mA
1. This corresponds to the quiescent current or operating current under
small-signal conditions into pins 6, 7, and 8.
S21 vs . Fr eque ncy
0
3
6
9
12
15
2110 2120 2130 2140 2150 2160 2170
Fre que ncy (MHz)
S21 (dB)
+25°C
+85°C
-40°C
S11 vs. Fr equency
-30
-26
-22
-18
-14
-10
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
S11 (dB)
+25°C
+85°C
-40°C
S22 vs. Fr equency
-20
-15
-10
-5
0
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
S22 (dB)
+25°C
+85°C
-40°C
Noise Fi gure vs. Frequency
0
1
2
3
4
5
6
7
8
9
2110 2120 2130 2140 2150 2160 2170
Fre q uency (MHz)
NF (dB)
+25°C
+85°C
-40°C
P1 dB vs. Frequency
24
26
28
30
32
34
2110 2120 2130 2140 2150 2160 2170
Fre quency (MHz)
P1 dB (dBm )
+25°C
+85°C
-40°C
ACPR vs. Channel Power
3GPP W-CDMA, Test Model 1+64 DPCH, ±5MHz offset, 2140 MH z
-65
-60
-55
-50
-45
-40
19 20 21 22 23 24
Ou t put Ch an n el Po wer ( d Bm)
ACPR
(
dBc
)
+25°C
+85°C
-40°C
O I P3 vs. Temper at ure
freq. = 2140, 2141 MHz, +15 dBm / tone
35
38
41
44
47
50
-40 -15 10 35 60 85
Temperature (°C )
OIP3 (dBm)
O I P3 v s. Frequenc y
+25°C, +15 dBm / tone
35
38
41
44
47
50
2110 2120 2130 2140 2150 2160 2170
Fre que ncy (MHz)
OIP3 (dBm)
OIP3 vs. Output Power
freq. = 2140, 2141 MHz, 25°C
35
38
41
44
47
50
10 12 14 16 18 20 22
Ou tp u t Po wer (d Bm)
OIP3 (dBm)
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 6 of 7 September 2005
AH215
1 Watt, High Linearity InGaP HBT Amplifier Product Information
The Communications Ed
g
e TM
Application Note: Reduced Bias Configurations
The AH215 can be configured to be operated with lower bias current by varying the bias-adjust resistor – R1. The
recommended circuit configurations shown previously in this datasheet have the device operating in Class A operation.
Lowering the current has little effect on the gain, OIP3, and P1dB performance of the device, but will slightly lower the
ACLR/ACPR performance of the device as shown below. An example of the measured data below represents the AH215
measured and configured for 2.14 GHz applications. It is expected that variation of the bias current for other frequency
applications will produce similar performance results.
AH215-S8PCB2 140 Performance Data
R1
(ohms) Icq
(mA) Pdiss
(W) P1dB
(dBm) OIP3
(dBm)
51 450 2.25 +31.0 +47.1
68 400 2.00 +30.9 +46.4
100 350 1.75 +30.8 +46.4
130 300 1.50 +30.6 +45.5
180 250 1.25 +30.5 +43.6
2.14GHz Gain vs. Output Power
8.5
9
9.5
10
10.5
11
11.5
16 18 20 22 24 26 28 30 32
Output Power (dBm)
Gain (dB)
Idq=450mA 'Class A'
Idq=400mA
Idq=350mA
Idq=300mA
Idq=250mA
2.14GHz OIP3 vs. Output Power per Tone
30
35
40
45
50
10 12 14 16 18 20 22 24
Power Out per Tone (dBm)
OIP3 (dBm)
Idq=450mA 'Class A'
Idq=400mA
Idq=350mA
Idq=300mA
Idq=250mA
W-CDMA ACLR vs. Output Channel Power
3GPP W-CDMA, Test Model 1 + 64 DPCH, ±5 MHz offset
-65
-60
-55
-50
-45
-40
-35
12 14 16 18 20 22 24
W-CDMA Channel Power Out (dBm)
ACLR (dBc)
Idq=450mA 'Class A'
Idq=400mA
Idq=350mA
Idq=300mA
Idq=250mA
CW PAE vs. Output Power
1
10
100
16 18 20 22 24 26 28 30 32
CW Tone Power Out (dBm)
PAE (%)
Idq=450mA 'Class A'
Idq=400mA
Idq=350mA
Idq=300mA
Idq=250mA
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 7 of 7 September 2005
AH215
1 Watt, High Linearity InGaP HBT Amplifier Product Information
The Communications Ed
g
e TM
AH215-S8G (Lead-Free Package) Mechanical Information
This package is lead-free/green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free
(maximum 260 °C reflow temperature) and lead (maximum 245 °C reflow temper ature) soldering processes.
Outline Drawing
Mounting Configuration / Land Pattern
Thermal Specifications
Parameter Rating
Operating Case Temperature (1) -40 to +85 °C
Thermal Resistance (2), Rth 33 °C / W
Junction Temperature (3), Tjc 159 °C
Notes:
1. The amplifier can be operat ed at 105 °C case temperature for up to 100 0
hours over its lifetime without degradation in performance and will not
degrade device operation at the recommended maximum 85 °C case
temperature for the rest of its lifetime.
2. The thermal resistance is referenced from the junction-to-case at a case
temperature of 85 °C. Tjc is a fun ction of the voltage at pins 6 and 7 and
the current applied to pins 6, 7, and 8 and can be calculated by:
Tjc = Tcase + Rth * Vcc * Icc
3. This corresponds to the typical biasing condition of +5V, 450 mA at an
85°C case temperature. A minimum MTTF of 1 million hours is achieved
for junction temperatures below 247 °C.
Product Marking
The component will be marked with an
“AH215G” designator with an alphanumeric lot
code on the top surface of the package. The
obsoleted tin-lead version will have been marked
with an “AH215-S8” or “ECP100G” designator.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
ESD / MSL Information
ESD Rating: Class 1B
Value: Passes 500V to <1000V
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
MSL Rating: Level 2 at +260 °C convection reflow
Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. A heatsink underneath the area of the PCB for the mounted device
is strictly required for proper thermal operation. Damage to the
device can occur without the use of one.
2. Ground / thermal vias are critical for the prop er p erformance o f this
device. Vias should use a .35mm (#80 / .0135”) diameter drill and
have a final plated thru diameter of .25 mm (.010”).
3. Add as much copper as possible to inner and outer layers near the
part to ensure optimal thermal performance.
4. Mounting screws can be added near the part to fasten the board to a
heatsink. Ensure that the ground / thermal via region contacts the
heatsink.
5. Do not put solder mask on the backside of the PC board in the
region where the board contacts the heatsink.
6. RF trace width depends upon the PC board material and
construction.
7. Use 1 oz. Copper minimum.
8. All dimensions are in millimeters (inches). Angles are in degrees.
MTTF vs . GND Tab Tempera t ur e
100
1000
10000
100000
1000000
50 60 70 80 90 100
Ta b tem pera ture (° C)
M TT F (m illio n h rs)
