ZXMS6004N8Q qDMN2027USS 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE LOW-SIDE INTELLIFET ADVANCE INFORMATION Product Summary Features and Benefits VDS RDS(ON) EAS ID TA = +25C 60V 500m 120mJ 1.3A Description The ZXMS6004N8Q is a self-protected low side IntelliFET(R) with logic level input. It integrates over-temperature, overcurrent, overvoltage (active clamp) and ESD protected logic level functionality. The ZXMS6004N8Q is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough. Low Input Current Logic Level Input (3.3V and 5V) Short Circuit Protection with Auto Restart Overvoltage Protection (active clamp) Thermal Shutdown with Auto Restart Overcurrent Protection Input Protection (ESD) High Continuous Current Rating Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Characterized to AEC-Q101-006 Grade E for Short-circuit Reliability PPAP Capable (Note 4) Mechanical Data Applications Especially Suited for Loads with a High In-rush Current Such As Lamps and Motors All types of resistive, inductive and capacitive loads in switching applications C Compatible Power Switch for 12V and 24V DC Applications Replaces electromechanical relays and discrete circuits Linear Mode capability - the current-limiting protection circuitry is designed to de-activate at low VDS to minimize on state power dissipation. The maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the products ability to self-protect at low VDS. Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish e3 Weight: 80.2mg (Approximate) D SO-8 IN S Top View S D S D S D IN D Top View Pin Out Device Symbol Ordering Information (Note 5) Part number ZXMS6004N8Q-13 Notes: Marking 6004N8 Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500 units 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporateds definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information Logo Part No. 6004N8 YY WW Pin 1. 6004N8 = Product Name YY: Year WW: Week: 01~52; 52 represents 52 and 53 week Top View IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6004N8Q Document number: DS38897 Rev. 2 - 2 1 of 8 www.diodes.com June 2016 (c) Diodes Incorporated ZXMS6004N8Q qDMN2027USS ADVANCE INFORMATION Functional Block Diagram dV/dt limitation Absolute Maximum Ratings (@TA = +25C, unless otherwise stated.) Characteristic Continuous Drain-Source Voltage Drain-Source Voltage for Short Circuit Protection Continuous Input Voltage Continuous Input Current @-0.2V VIN 6V Continuous Input Current @VIN < -0.2V or VIN > 6V Pulsed Drain Current @VIN = 3.3V Pulsed Drain Current @VIN = 5V Continuous Source Current (Body Diode) (Note 5) Pulsed Source Current (Body Diode) Unclamped Single Pulse Inductive Energy, TJ = +25C, ID = 0.5A, VDD = 24V Electrostatic Discharge (Human Body Model) Charged Device Model Symbol VDS VDS(SC) VIN Value 60 36 -0.5 to +6 No limit IIN 2 2 2.5 1 5 Units V V V EAS 120 mJ VHBM VCDM 4,000 1,000 V V Symbol Value 1.28 10 1.65 12.4 98 76 12 -40 to +150 -55 to +150 Units W mW/C W mW/C C/W C/W C/W C C IIN IDM IDM IS ISM mA A A A A Thermal Resistance (@TA = +25C, unless otherwise specified.) Characteristic Power Dissipation at TA = +25C (Note 5) Linear Derating Factor Power Dissipation at TA = +25C (Note 6) Linear Derating Factor Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 7) Operating Temperature Range Storage Temperature Range Notes: PD PD RJA RJA RJC TJ TSTG 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Thermal resistance between junction and the mounting surfaces of drain and source pins. IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6004N8Q Document number: DS38897 Rev. 2 - 2 2 of 8 www.diodes.com June 2016 (c) Diodes Incorporated ZXMS6004N8Q qDMN2027USS Recommended Operating Conditions ADVANCE INFORMATION The ZXMS6004N8Q is optimized for use with C operating from 3.3V and 5V supplies. Characteristic Input Voltage Range Ambient Temperature Range High Level Input Voltage for MOSFET to be on Low Level Input Voltage for MOSFET to be off Peripheral Supply Voltage (voltage to which load is referred) Electrical Characteristics Min 0 -40 3 0 0 Max 5.5 +125 5.5 0.7 36 Unit V C V V V (@TA = +25C, unless otherwise stated.) Characteristic Static Characteristics Drain-Source Clamp Voltage Symbol Min Typ Max Unit VDS(AZ) 60 - - 0.7 - - - - - 0.9 1.0 1.2 1.3 0.7 1 65 - - 1 60 120 - 400 350 - - - - 1.7 2.2 70 0.5 1 1.5 100 200 400 600 500 - - - - - - V tD(OFF) tF - - - - 5 10 45 15 - - - - s TJT TJT +150 - +175 +10 - - C C Off State Drain Current IDSS Input Threshold Voltage VIN(TH) Input Current IIN Input Current While Over-Temperature Active - Static Drain-Source On-State Resistance RDS(ON) Continuous Drain Current (Note 5) ID Continuous Drain Current (Note 6) Current Limit (Note 8) Dynamic Characteristics Turn On Delay Time Rise Time Turn Off Delay Time Fall Time Over-Temperature Protection Thermal Overload Trip Temperature (Note 9) Thermal Hysteresis (Note 9) Notes: Symbol VIN TA VIH VIL VP ID(LIM) tD(ON) tR A V A A m A A Test Condition ID = 10mA VDS = 12V, VIN = 0V VDS = 36V, VIN = 0V VDS = VGS, ID = 1mA VIN = 3V VIN = 5V VIN = 5V VIN = 3V, ID = 0.5A VIN = 5V, ID = 0.5A VIN = 3V, TA = +25C VIN = 5V, TA = +25C VIN = 3V, TA = +25C VIN = 5V, TA = +25C VIN = 3V VIN = 5V VDD = 12V, ID = 0.5A, VGS = 5V - - 8. The drain current is restricted only when the device is in saturation (see graph typical output characteristic). This allows the device to be used in the fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside saturation makes current limit unnecessary. 9. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as "outside" normal operating range, so this part is not designed to withstand over-temperature for extended periods. IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6004N8Q Document number: DS38897 Rev. 2 - 2 3 of 8 www.diodes.com June 2016 (c) Diodes Incorporated ZXMS6004N8Q qDMN2027USS Thermal Characteristics 1.80 RDS(ON) Limited PW = 100s 1.60 PD, POWER DISSIPATION (W) ID, DRAIN CURRENT (A) 1 DC PW = 10s PW = 1s 0.1 Single Pulse TJ(Max) = 150 TC = 25 VGS = 5V PW = 100ms PW = 10ms 1.40 1.20 1.00 Note 6 0.80 0.60 Note 5 0.40 0.20 PW = 1ms 0.00 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) SOA, Safe Operation Area 0 100 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE () DC Forward Current Derating 175 r(t), TRANSIENT THERMAL RESISTANCE (oC/W) 100 90 80 70 60 50 40 D=0.1 D=0.5 D=0.05 30 20 D=0.3 D=0.02 D=0.01 D=0.005 D=Single Pulse 10 0 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Transient Thermal Resistance Duty Cycle, D = t1/ t2 100 1000 1000 P(pk), PEAK TRANSIENT POWER (W) ADVANCE INFORMATION 10 Single Pulse TA = 25oC 100 10 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Single Pulse Maximum Power Dissipation 100 1000 IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6004N8Q Document number: DS38897 Rev. 2 - 2 4 of 8 www.diodes.com June 2016 (c) Diodes Incorporated ZXMS6004N8Q qDMN2027USS ADVANCE INFORMATION Typical Characteristics IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6004N8Q Document number: DS38897 Rev. 2 - 2 5 of 8 www.diodes.com June 2016 (c) Diodes Incorporated ZXMS6004N8Q qDMN2027USS ADVANCE INFORMATION Typical Characteristics (Cont.) VIN = 5V VDS = 15V RC = 0 TA = 25C IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6004N8Q Document number: DS38897 Rev. 2 - 2 6 of 8 www.diodes.com June 2016 (c) Diodes Incorporated ZXMS6004N8Q qDMN2027USS Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. ADVANCE INFORMATION SO-8 SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 X Dimensions X Y C1 C2 C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6004N8Q Document number: DS38897 Rev. 2 - 2 7 of 8 www.diodes.com June 2016 (c) Diodes Incorporated ZXMS6004N8Q qDMN2027USS ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2016, Diodes Incorporated www.diodes.com IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6004N8Q Document number: DS38897 Rev. 2 - 2 8 of 8 www.diodes.com June 2016 (c) Diodes Incorporated