Power Transistors
1
2SB15032SB1503
2SB15032SB1503
2SB1503
Silicon PNP epitaxial planar type Darlington
For power amplification
Complementary to 2SD2276
■Features
•Optimum for 110 W Hi-Fi output
•High forward current transfer ratio hFE: 5 000 to 30 000
•Low collector to emitter saturation voltage VCE(sat): < −2.5 V
■Absolute Maximum Ratings TC = 25°C
1 : Base
2 : Collector
3 : Emitter
TOP-3L Package
Unit: mm
■Electrical Characteristics TC = 25°C
Parameter Symbol Rating Unit
Collector to base voltage VCBO −160 V
Collector to emitter voltage VCEO −140 V
Emitter to base voltage VEBO −5V
Peak collector current ICP −12 A
Collector current IC−7A
Collector power TC = 25°CP
C120 W
dissipation Ta = 25°C 3.5
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current ICBO VCB = −160 V, IE = 0 −100 µA
ICEO VCE = −140 V, IB = 0 −100 µA
Emitter cutoff current IEBO VEB = −5 V, IC = 0 −100 µA
Collector to emitter voltage VCEO IC = −30 mA, IB = 0 −140 V
Forward current transfer ratio hFE1 VCE = −5 V, IC = −1 A 2 000
hFE2 *VCE = −5 V, IC = −7 A 5 000 30 000
Collector to emitter saturation voltage
VCE(sat) IC = −7 A, IB = −7 mA −2.5 V
Base to emitter saturation voltage VBE(sat) IC = −7 A, IB = −7 mA −3.0 V
Transition frequency fTVCE = −10 V, IC = − 0.5 A, f = 1 MHz 20 MHz
Turn-on time ton IC = −7 A, IB1 = −7 mA, IB2 = 7 mA, 1.0 µs
Storage time tstg VCC = −50 V 1.5 µs
Fall time tf1.2 µs
Rank Q S P
hFE2
5 000 to 15 000 7 000 to 21 000 8 000 to 30 000
Internal Connection
20.0
±0.5
2.0
±0.3
3.0
±0.3
1.0
±0.2
5.45
±0.3
10.9
±0.5
123
26.0
±0.5
(10.0)
(2.5)
Solder Dip
(6.0)
(4.0)
(2.0)
(1.5)
(1.5)
20.0
±0.5
5.0
±0.3
φ 3.3
±0.2
(1.5)
2.7
±0.3
0.6
±0.2
(3.0)
(3.0)
(2.0)
B
C
E
Note) *: Rank classification
Power Transistors
2
2SB1503
VBE(sat) IChFE ICCob VCB
PC TaIC VCE VCE(sat) IC
ton, tstg, tf ICArea of safe operation (ASO)
0 16040 12080 14020 10060
0
200
150
50
100
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=3.5W)
(1)
(2)
(3)
Ambient temperature Ta (˚C)
Collector power dissipation P
C
(W)
0–12–10–8–2–6–4
0
–12
–10
–8
–6
–4
–2
T
C
=25˚C
– 0.9mA
– 0.8mA
– 0.7mA
– 0.6mA
– 0.5mA
– 0.4mA
– 0.3mA
– 0.2mA
–1mA
I
B
=–2mA
Collector to emitter voltage VCE (V)
Collector current IC (A)
– 0.1 –1–10 –100– 0.3 –3–30
– 0.1
–100
–10
–1
– 0.3
–3
–30
I
C
/I
B
=1000
25˚C
–25˚C
T
C
=100˚C
Collector current IC (A)
Collector to emitter saturation voltage VCE(sat) (V)
– 0.1 –1–10 –100– 0.3 –3–30
– 0.1
–100
–10
–1
– 0.3
–3
–30
IC/IB=1000
TC=–25˚C
25˚C
100˚C
Collector current IC (A)
Base to emitter saturation voltage V
BE(sat)
(V)
– 0.01
– 0.1 –1–10
– 0.03
– 0.3 –3
10
30
100
300
1000
3000
10000
30000
100000
V
CE
=–5V
T
C
=100˚C
25˚C
–25˚C
Collector current IC (A)
Forward current transfer ratio hFE
–1–3–10 –30 –100
1
1000
100
10
3
30
300
I
E
=0
f=1MHz
T
C
=25˚C
Collector to base voltage VCB (V)
Collector output capacitance Cob (pF)
0–16–4–12–8
0.01
0.03
0.1
0.3
1
3
10
30
100
tstg
ton
tf
Pulsed tw=1ms
Duty cycle=1%
IC/IB=1000
(–IB1=IB2)
VCC=–50V
TC=25˚C
Collector current IC (A)
Switching time t
on
,t
stg
,t
f
(µs)
–1–10 –100 –1000–3–30 –300
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
10ms
t=1ms
I
CP
I
C
Non repetitive pulse
T
C
=25˚C
DC
Collector to emitter voltage VCE (V)
Collector current IC (A)
Power Transistors
3
2SB1503
Rth(t) t
10
–3
10
2
10
–2
110
–1
10 10
3
10
4
0.1
1
10
100
1000
(1)
(2)
Note: R
th
was measured at Ta=25˚C and under natural convection.
(1) P
T
=10V × 0.3A (3W) and without heat sink
(2) P
T
=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
Time t (s)
Thermal resistance Rth(t) (˚C/W)
Please read the following notes before using the datasheets
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2001 MAR
