AP4503BGO-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement S2 N-CH BVDSS G2 S2 Lower Gate Charge RDS(ON) D2 Fast Switching Performance RoHS Compliant & Halogen-Free S1 23m ID G1 TSSOP-8 30V S1 D1 6.3A P-CH BVDSS Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. -30V RDS(ON) 35m ID -5.2A D2 D1 G2 G1 S1 S2 Absolute Maximum Ratings Symbol Parameter Rating N-channel VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Units P-channel 30 -30 V +20 +20 V 3 6.3 -5.2 A 3 5.0 -4.2 A 20 -20 A Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current PD@TA=25 Total Power Dissipation TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 1.38 W Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 90 /W 1 201104201 AP4503BGO-HF N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Min. Typ. 30 - - V VGS=10V, ID=6A - - 23 m VGS=4.5V, ID=4A - - 40 m VGS=0V, ID=250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=6A - 14 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 1 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=6A - 7 11 nC Qgs Gate-Source Charge VDS=15V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4 - nC td(on) Turn-on Delay Time VDS=15V - 6 - ns tr Rise Time ID=1A - 6 - ns td(off) Turn-off Delay Time RG=3.3 - 17 - ns tf Fall Time VGS=10V - 4 - ns Ciss Input Capacitance VGS=0V - 550 880 pF Coss Output Capacitance VDS=15V - 105 - pF Crss Rg Reverse Transfer Capacitance f=1.0MHz - 90 - pF Gate Resistance f=1.0MHz - 1.7 - Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=1.2A, VGS=0V - - 1.2 V trr Reverse Recovery Time IS=6A, VGS=0V, - 15 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 7 - nC 2 AP4503BGO-HF P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Min. Typ. -30 - - V VGS=-10V, ID=-5A - - 35 m VGS=-4.5V, ID=-3A - - 50 m VGS=0V, ID=-250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-5A - 18 - S IDSS Drain-Source Leakage Current VDS=-24V, VGS=0V - - -1 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=-5A - 14.4 23 nC Qgs Gate-Source Charge VDS=-15V - 5.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 5 - nC td(on) Turn-on Delay Time VDS=-15V - 7 - ns tr Rise Time ID=-1A - 6.5 - ns td(off) Turn-off Delay Time RG=3.3 - 36 - ns tf Fall Time VGS=-10V - 28 - ns Ciss Input Capacitance VGS=0V - 960 1530 pF Coss Output Capacitance VDS=-15V - 190 - pF Crss Rg Reverse Transfer Capacitance f=1.0MHz - 170 - pF Gate Resistance f=1.0MHz - 6 - Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=-1.2A, VGS=0V - - -1.2 V trr Reverse Recovery Time IS=-5A, VGS=0V, - 19 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 9 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 208/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3 AP4503BGO-HF N-Channel 30 20 10V 7.0V 6.0V 5.0V V G =4.0V 20 10V 7.0V 6.0V 5.0V V G =4.0V T A =150 ID , Drain Current (A) ID , Drain Current (A) T A =25 10 0 10 0 0 1 2 3 4 5 6 7 0 8 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 35 1.8 I D =6A V G =10V I D = 4A o T A = 25 C Normalized R DS(ON) RDS(ON0 (m) 30 25 20 1.4 1.0 15 30 -30 0.6 10 2 4 6 8 -50 10 0 50 100 150 o T j , Junction Temperature ( C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 7 I D =1mA 6 Normalized VGS(th) (V) 1.6 IS(A) 5 T j =25 o C T j =150 o C 4 3 2 1.2 0.8 0.4 1 0 0.0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4 AP4503BGO-HF N-Channel f=1.0MHz 1000 8 800 ID=6A V DS = 15 V C (pF) VGS , Gate to Source Voltage (V) 10 6 600 C iss 4 400 2 200 C oss C rss 0 0 0 4 8 12 16 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 Operation in this area limited by RDS(ON) ID (A) 10 100us 1ms 1 10ms 100ms 0.1 T A =25 o C Single Pulse 1s DC 0.01 Normalized Thermal Response (R thja) Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM Single Pulse 0.01 t T 30 Duty factor = t/T Peak Tj = PDM x Rthja + Ta -30 Rthja=208 oC/W 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 50 V DS =5V VG ID , Drain Current (A) 40 QG T j =150 o C T j =25 o C 30 4.5V QGS QGD 20 10 Charge Q 0 0 2 4 6 8 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 5 AP4503BGO-HF P-Channel 20 15 T A =25 o C - 10 V - 7.0 V - 6.0 V - 5.0 V V G = - 4.0 V 12 -ID , Drain Current (A) -ID , Drain Current (A) 16 T A = 150 o C 12 8 4 -10V -7.0V -6.0V -5.0V V G = - 4.0 V 9 6 3 0 0 0 1 2 3 4 0 1 2 3 4 5 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.8 40 I D = -3 A T A =25 o C I D = -5 A V G = - 10V 1.6 Normalized R DS(ON) RDS(ON) (m) 35 30 1.4 1.2 1.0 25 30 0.8 -30 0.6 20 2 4 6 8 -50 10 0 -V GS , Gate-to-Source Voltage (V) 50 100 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 8 I D = -1mA Normalized -VGS(th) (V) 1.6 -IS(A) 6 T j =150 o C T j =25 o C 4 1.2 0.8 2 0.4 0 0.0 0 0.4 0.8 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6 AP4503BGO-HF P-Channel 10 f=1.0MHz 1600 8 1200 C (pF) -VGS , Gate to Source Voltage (V) I D = -5A V DS = -15V 6 C iss 800 4 400 2 C oss C rss 0 0 0 8 16 24 32 1 5 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 100 Operation in this area limited by RDS(ON) Normalized Thermal Response (R thja) 1 10 -ID (A) 9 -V DS , Drain-to-Source Voltage (V) 100us 1ms 1 10ms 100ms 1s 0.1 T A =25 o C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t Single Pulse T 30 Duty factor = t/T Peak Tj = PDM x Rthja + Ta -30 Rthja=208 oC/W DC 0.01 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 -V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 20 V DS = -5V 16 -ID , Drain Current (A) VG T j =25 o C T j =150 o C QG -4.5V 12 QGS QGD 8 4 Charge Q 0 0 1 2 3 4 5 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 7