AP4503BGO-HF - Advanced Power Electronics Corp. USA

Advanced Power N AND P-CHANNEL ENHANCEMENT

Electronics Corp. MODE POWER MOSFET

▼ Simple Drive Requirement N-CH BVDSS 30V

▼ Lower Gate Charge RDS(ON) 23mΩ

▼ Fast Switching Performance ID6.3A

▼ RoHS Compliant & Halogen-Free P-CH BVDSS -30V

RDS(ON) 35mΩ

Description ID-5.2A

Absolute Maximum Ratings

Symbol Parameter Rating Units

N-channel P-channel

VDS Drain-Source Voltage 30 -30 V

VGS Gate-Source Voltage +20 +20 V

ID@TA=25℃Continuous Drain Current3 6.3 -5.2 A

ID@TA=70℃Continuous Drain Current3 5.0 -4.2 A

IDM Pulsed Drain Current1 20 -20 A

PD@TA=25℃Total Power Dissipation W

TSTG Storage Temperature Range -55 to 150 ℃

TJOperating Junction Temperature Range -55 to 150 ℃

Symbol Value Unit

Rthj-a Maximum Thermal Resistance, Junction-ambient390 ℃/W

Data and specifications subject to change without notice

201104201

Parameter

Thermal Data

AP4503BGO-HF

1.38

Halogen-Free Product

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-

effectiveness.

D2 S2 S2 G2

D1 S1 S1 G1

TSSOP-8

N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V

RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=6A - - 23 mΩ

VGS=4.5V, ID=4A - - 40 mΩ

VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V

gfs Forward Transconductance VDS=10V, ID=6A - 14 - S

IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 1 uA

IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA

QgTotal Gate Charge ID=6A - 7 11 nC

Qgs Gate-Source Charge VDS=15V - 2 - nC

Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4 - nC

td(on) Turn-on Delay Time VDS=15V - 6 - ns

trRise Time ID=1A - 6 - ns

td(off) Turn-off Delay Time RG=3.3Ω-17-ns

tfFall Time VGS=10V - 4 - ns

Ciss Input Capacitance VGS=0V - 550 880 pF

Coss Output Capacitance VDS=15V - 105 - pF

Crss Reverse Transfer Capacitance f=1.0MHz - 90 - pF

RgGate Resistance f=1.0MHz - 1.7 - Ω

Source-Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Units

VSD Forward On Voltage2IS=1.2A, VGS=0V - - 1.2 V

trr Reverse Recovery Time IS=6A, VGS=0V, - 15 - ns

Qrr Reverse Recovery Charge dI/dt=100A/µs - 7 - nC

AP4503BGO-HF

P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V

RDS(ON) Static Drain-Source On-Resistance2VGS=-10V, ID=-5A - - 35 mΩ

VGS=-4.5V, ID=-3A - - 50 mΩ

VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V

gfs Forward Transconductance VDS=-10V, ID=-5A - 18 - S

IDSS Drain-Source Leakage Current VDS=-24V, VGS=0V - - -1 uA

IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA

QgTotal Gate Charge ID=-5A - 14.4 23 nC

Qgs Gate-Source Charge VDS=-15V - 5.5 - nC

Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 5 - nC

td(on) Turn-on Delay Time VDS=-15V - 7 - ns

trRise Time ID=-1A - 6.5 - ns

td(off) Turn-off Delay Time RG=3.3Ω-36-ns

tfFall Time VGS=-10V - 28 - ns

Ciss Input Capacitance VGS=0V - 960 1530 pF

Coss Output Capacitance VDS=-15V - 190 - pF

Crss Reverse Transfer Capacitance f=1.0MHz - 170 - pF

RgGate Resistance f=1.0MHz - 6 - Ω

Source-Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Units

VSD Forward On Voltage2IS=-1.2A, VGS=0V - - -1.2 V

trr Reverse Recovery Time IS=-5A, VGS=0V, - 19 - ns

Qrr Reverse Recovery Charge dI/dt=100A/µs - 9 - nC

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse test

3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 208℃/W when mounted on min. copper pad.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED

HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

AP4503BGO-HF

N-Channel

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

30 -30

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

012345678

VDS , Drain-to-Source Voltage (V)

ID , Drain Curre nt (A)

TA=25

℃

012345

VDS , Drain-to-Source Voltage (V)

ID , Drain Curre nt (A)

TA=150

℃

246810

VGS , Gate-to-Source Voltage (V)

RDS(ON0 (m

)

ID= 4A

TA= 25 oC

0.6

1.0

1.4

1.8

-50 0 50 100 150

Tj , Junction Temperature ( oC)

Normal ized RDS(ON)

ID=6A

VG=10V

0 0.2 0.4 0.6 0.8 1 1.2 1.4

VSD , Source-to-Drain Voltage (V)

IS(A)

Tj=25oC

Tj=150 oC

0.0

0.4

0.8

1.2

1.6

2.0

-50 0 50 100 150

Tj , Junction Temperature ( oC)

Normal ized VGS(th) (V)

ID=1mA

10V

7.0V

6.0V

5.0V

VG=4.0V

10V

7.0V

6.0V

5.0V

VG=4.0V

P4503BGO-HF

N-Channel

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

30 -30

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform

4.5V

QGS QGD

Charge

0 4 8 12 16

QG , Total Gate Charge (nC)

VGS , Gate to Source Voltage (V)

D=6A

VDS =15V

200

400

600

800

1000

1 5 9 13 17 21 25 29

VDS , Drain-to-Source Voltage (V)

C (pF)

=1.0MHz

0.01

0.1

100

0.01 0.1 1 10 100

VDS , Drain-to-Source Voltage (V)

ID (A)

TA=25oC

Single Pulse

100us

1ms

10ms

100ms

0.001

0.01

0.1

0.0001 0.001 0.01 0.1 1 10 100 1000

t , Pulse Width (s)

Normalized Thermal Response (Rthja)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthja + Ta

Rthja=208oC/W

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

Coss

Crss

Ciss

02468

VGS , Gate-to-Source Voltage (V)

ID , Drain Curre nt (A)

Tj=150 oC

Tj=25oC

VDS =5V

Operation in this

area limited by

RDS(ON)

AP4503BGO-HF

P-Channel

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

30 -30

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

01234

-VDS , Drain-to-Source Voltage (V)

-ID , Drain Current (A)

TA=25oC -10V

- 7.0 V

- 6.0 V

- 5.0 V

VG= -4.0 V

012345

-VDS , Drain-to-Source Voltage (V)

-ID , Drain Current (A)

TA= 150 oC-10V

-7.0V

-6.0V

-5.0V

VG= -4.0 V

246810

-VGS , Gate-to-Source Voltage (V)

RDS(ON) (m

)

ID= -3 A

TA=25oC

0.6

0.8

1.0

1.2

1.4

1.6

1.8

-50 0 50 100 150

Tj , Junction Temperature ( oC)

Normal ized RDS(ON)

ID= -5 A

VG= - 10V

0 0.4 0.8 1.2 1.6

-VSD , Source-to-Drain Voltage (V)

-IS(A)

Tj=25oCTj=150 oC

0.0

0.4

0.8

1.2

1.6

2.0

-50 0 50 100 150

Tj , Junction Temperature ( oC)

Normal ized -V GS(th) (V)

ID= -1mA

P4503BGO-HF

P-Channel

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

30 -30

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform

-4.5V

QGS QGD

Charge

0 8 16 24 32

QG , Total Gate Charge (nC)

-VGS , Gate to Source Voltage (V)

D= -5A

VDS = -15V

400

800

1200

1600

1 5 9 13 17 21 25 29

-VDS , Drain-to-Source Voltage (V)

C (pF)

=1.0MHz

Ciss

Coss

Crss

0.01

0.1

100

0.01 0.1 1 10 100

-VDS , Drain-to-Source Voltage (V)

-ID (A)

TA=25oC

Single Pulse

100us

1ms

10ms

100ms

0.001

0.01

0.1

0.0001 0.001 0.01 0.1 1 10 100 1000

t , Pulse Width (s)

Normalized Thermal Response (Rthja)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthja + Ta

Rthja=208oC/W

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

012345

-VGS , Gate-to-Source Voltage (V)

-ID , Drain Current (A)

Tj=150 oC

Tj=25oC

VDS = -5V

Operation in this

area limited by

RDS(ON)