Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A Unit: mm 3.00.2 4.00.2 Features Parameter (Ta=25C) Symbol Collector to 2SB1030 base voltage 2SB1030A Collector to 2SB1030 Ratings -30 VCBO -60 -25 VCEO emitter voltage 2SB1030A -50 Unit marking V 2 3 V 1.27 1.27 Emitter to base voltage VEBO -7 V Peak collector current ICP -1 A Collector current IC - 0.5 A Collector power dissipation PC 300 mW Junction temperature Tj 150 C Storage temperature Tstg -55 ~ +150 C Electrical Characteristics 1 2.00.2 Absolute Maximum Ratings 15.60.5 Optimum for high-density mounting. Allowing supply with the radial taping. 0.70.1 +0.2 0.45-0.1 2.540.15 1:Emitter 2:Collector 3:Base EIAJ:SC-72 New S Type Package (Ta=25C) Parameter Symbol Conditions min typ max Unit ICBO VCB = -20V, IE = 0 - 0.1 A ICEO VCE = -20V, IB = 0 -1 A VCBO IC = -10A, IE = 0 VCEO IC = -2mA, IB = 0 VEBO IE = -10A, IC = 0 -7 hFE1*1 VCE = -10V, IC = -150mA*2 85 hFE2 VCE = -10V, IC = -500mA*2 40 Collector to emitter saturation voltage VCE(sat) IC = -300mA, IB = -30mA*2 Transition frequency fT VCB = -10V, IE = 50mA, f = 200MHz Collector output capacitance Cob VCB = -10V, IE = 0, f = 1MHz Collector cutoff current Collector to base 2SB1030 voltage 2SB1030A Collector to emitter 2SB1030 voltage 2SB1030A Emitter to base voltage Forward current transfer ratio -30 V -60 -25 V -50 V 340 - 0.35 200 FE1 V MHz 6 15 *2 *1h - 0.6 pF Pulse measurement Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 1 2SB1030, 2SB1030A Transistor PC -- Ta IC -- VCE -1000 400 350 -800 300 IB=-10mA -9mA -8mA -7mA -6mA -5mA -4mA -600 250 200 -400 150 100 -3mA -2mA -200 -1mA 50 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (C) -2 -10 -3 Ta=75C 25C -25C - 0.3 - 0.1 - 0.03 -1 -3 400 300 Ta=75C 200 25C -25C 100 -1 -3 -10 Collector current IC (A) IE=0 f=1MHz Ta=25C 12 10 8 6 4 VCE=-10V Ta=25C Function=FLAT 200 Noise voltage NV (mV) 14 160 120 Rg=100k 80 22k 40 4.7k 2 -30 -100 Collector to base voltage VCB (V) -3 -10 VCB=-10V Ta=25C 140 120 100 80 60 40 0 -10 -30 -100 -300 Collector current IC (A) 0 0.1 0.3 1 3 10 30 Emitter current IE (mA) NV -- IC 240 16 -1 Collector current IC (A) 20 Cob -- VCB -10 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 fT -- I E 500 0 - 0.01 - 0.03 - 0.1 - 0.3 -10 20 -3 - 0.03 160 Collector current IC (A) Collector output capacitance Cob (pF) -12 Ta=-25C 25C 75C -1 VCE=-10V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) -30 0 -1 -10 -3 - 0.1 600 IC/IB=10 18 -8 -10 hFE -- IC -100 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 -6 -30 Collector to emitter voltage VCE (V) VCE(sat) -- IC -1 -4 IC/IB=10 - 0.3 Transition frequency fT (MHz) 0 Base to emitter saturation voltage VBE(sat) (V) Ta=25C Collector current IC (mA) Collector power dissipation PC (mW) -100 450 0 2 VBE(sat) -- IC -1200 500 -1000 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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