1
Transistor
2SB1030, 2SB1030A
Silicon PNP epitaxial planer type
For low-frequency amplification
Complementary to 2SD1423 and 2SD1423A
■Features
●Optimum for high-density mounting.
●Allowing supply with the radial taping.
■Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector EIAJ:SC–72
3:Base New S Type Package
4.0±0.2
marking
2.54±0.15
1.271.27
3.0±0.215.6±0.5
2.0±0.2
0.7±0.1
0.45–0.1
123
+0.2
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–30
–60
–25
–50
–7
–1
– 0.5
300
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
2SB1030
2SB1030A
2SB1030
2SB1030A
■Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
ICEO
VCBO
VCEO
VEBO
hFE1*1
hFE2
VCE(sat)
fT
Cob
Conditions
VCB = –20V, IE = 0
VCE = –20V, IB = 0
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –150mA*2
VCE = –10V, IC = –500mA*2
IC = –300mA, IB = –30mA*2
V
CB
= –10V, I
E
= 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min
–30
–60
–25
–50
–7
85
40
typ
– 0.35
200
6
max
– 0.1
–1
340
– 0.6
15
Unit
µA
µA
V
V
V
V
MHz
pF
*1hFE1 Rank classification
Rank Q R S
hFE1 85 ~ 170 120 ~ 240 170 ~ 340
2SB1030
2SB1030A
2SB1030
2SB1030A
*2 Pulse measurement
2
Transistor 2SB1030, 2SB1030A
0 16040 12080 14020 10060
0
500
400
300
200
100
450
350
250
150
50
Ambient temperature Ta (˚C)
Collector power dissipation P
C
(mW)
0 –12–10–8–2 –6–4
0
–1200
–1000
–800
–600
–400
–200
Ta=25˚C
–9mA
–8mA
–7mA
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
I
B
=–10mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
– 0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100 I
C
/I
B
=10
Ta=–25˚C
75˚C
25˚C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V)
– 0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100 I
C
/I
B
=10
Ta=75˚C
25˚C
–25˚C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V)
– 0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
0
600
500
400
300
200
100
V
CE
=–10V
Ta=75˚C
25˚C
–25˚C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.1 1 10 1000.3 3 30
0
160
120
40
100
140
80
20
60
V
CB
=–10V
Ta=25˚C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz)
–1 –3 –10 –30 –100
0
20
16
12
8
4
18
14
10
6
2
I
E
=0
f=1MHz
Ta=25˚C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF)
–10 –30 –100 –300 –1000
0
240
200
160
120
80
40
V
CE
=–10V
Ta=25˚C
Function=FLAT
4.7kΩ
R
g
=100kΩ
22kΩ
Collector current I
C
(µA)
Noise voltage NV (mV)
PC — Ta IC — VCE VBE(sat) — IC
VCE(sat) — IChFE — ICfT — IE
Cob — VCB NV — IC
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2001 MAR
