BFX34 SILICON NPN TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BFX34 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case, intented for high current applications. Very low saturation voltage and high speed at high current levels make it ideal for power drivers, power amplifiers, switching power supplies and relay drivers inverters. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter V CBO Collector-Base Voltage (I E = 0) V CEO Collector-Emitter Voltage (I B = 0) V EBO Emitter-Base Voltage (I C = 0) Collector Current IC P tot Total Dissipation at T case 25 C T amb 25 o C T stg Storage Temperature Tj June 1997 o Max. Operating Junction Temperature Value Unit 120 V 60 V 6 V 5 A 0.87 5 W W -65 to 200 o C 200 o C 1/4 BFX34 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-amb Max Max o 35 200 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Typ. Max. Unit I CES Collector Cut-off Current (V BE = 0) Parameter V CE = 60 V Test Conditions 0.02 10 A I EBO Emitter Cut-off Current (I C = 0) V EB = 4 V 0.05 10 A V (BR)CBO Collector-base Breakdown Voltage (I E = 0) I C = 5 mA V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) I C = 100 mA 120 V 60 V 6 V Emitter-base Voltage (I C = 0) I E = 1 mA Collector-Emitter Saturation Voltage IC = 5 A I B = 0.5 A 0.4 1 V Base-Emitter Saturation Voltage IC = 5 A I B = -0.5 A 1.3 1.6 V DC Current Gain IC = 1 A I C = 1.5 A IC = 2 A V CE = 2 V V CE = 0.6 V V CE = 2 V 40 100 75 80 150 Transition Frequency I C = 0.5 A f = 20 MHz V CE = 5 V 70 100 C EBO Emitter-base Capacitance I C = 0.5 A f = 1 MHz V EB = 5 V 300 500 pF C CBO Collector-base Capacitance IE = 0 f = 1 MHz V CB = 10 V 40 100 pF t on Turn-on Time 0.25 s Turn-on Time I C = -0.5 A V CC = -20 V I B1 = -IB2 = -50 mA 0.6 t on 0.6 1.2 s V EBO V CE(sat) V BE(sat) h FE f T Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/4 Min. MHz BFX34 TO-39 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. 12.7 TYP. MAX. 0.500 B 0.49 0.019 D 6.6 0.260 E 8.5 0.334 F 9.4 0.370 G 5.08 0.200 H 1.2 0.047 I 0.9 0.035 45o (typ.) L D G A I E F H B L P008B 3/4 BFX34 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4