THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-case Max
Thermal Resistance Junction-amb Max 35
200
oC/W
oC/W
ELE CT RICAL CHAR ACT ERISTI CS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICES Collector Cut-off
Current (VBE = 0) VCE = 60 V 0.02 10 µA
IEBO Emitter Cut-off C urrent
(IC = 0) VEB = 4 V 0.05 10 µA
V(BR)CBO∗Collector-base
Breakdown Voltage
(IE = 0)
IC = 5 mA 120 V
VCEO(sus)∗Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA 60 V
VEBO∗Emitter-base Voltage
(IC = 0) IE = 1 mA 6 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 5 A IB = 0.5 A 0.4 1 V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = 5 A IB = -0.5 A 1.3 1.6 V
hFE∗DC Current Gain IC = 1 A VCE = 2 V
IC = 1.5 A VCE = 0.6 V
IC = 2 A VCE = 2 V 40
100
75
80 150
fT∗Transition Frequency IC = 0.5 A VCE = 5 V
f = 20 MHz 70 100 MHz
CEBO Emitter-base
Capacitance IC = 0.5 A VEB = 5 V
f = 1 MHz 300 500 pF
CCBO Collector-base
Capacitance IE = 0 VCB = 10 V
f = 1 MHz 40 100 pF
ton Turn-on Time IC = -0.5 A VCC = -20 V
IB1 = -IB2 = -50 mA 0.6 0.25 µs
ton Turn-on Time 0.6 1.2 µs
∗ P ulsed: P ulse durat ion = 300 µs, d uty cy cle 1.5 %
BFX34
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