BFX34
S ILICON NPN TRANSIST OR
SGS -THO MS ON PRE F ERRE D SALES T YP E
NPN TRANSISTOR
DESCRIPTION
The BFX34 is a silicon epitaxial planar NPN
transistor in Jedec TO-39 metal case, intented for
high current applications.
Very low saturation voltage and high speed at
high current levels make it ideal for power drivers ,
power amplifiers, switching power supplies and
relay drivers invert ers .
INTERNAL SCHEMATI C DI AG RAM
June 1997
TO-39
A BSO LUT E MAX IMU M RAT IN GS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE = 0) 120 V
VCEO Collector-Emitter Voltage (IB = 0) 60 V
VEBO Emitter-Base Voltage (IC = 0) 6 V
ICCollector Current 5 A
Ptot Total Dissipation at Tcase 25 oC
Tamb 25 oC0.87
5W
W
Tstg Storage Temperature -65 to 200 oC
TjMax. Operating Junction Temperature 200 oC
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THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-case Max
Thermal Resistance Junction-amb Max 35
200
oC/W
oC/W
ELE CT RICAL CHAR ACT ERISTI CS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICES Collector Cut-off
Current (VBE = 0) VCE = 60 V 0.02 10 µA
IEBO Emitter Cut-off C urrent
(IC = 0) VEB = 4 V 0.05 10 µA
V(BR)CBOCollector-base
Breakdown Voltage
(IE = 0)
IC = 5 mA 120 V
VCEO(sus)Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA 60 V
VEBOEmitter-base Voltage
(IC = 0) IE = 1 mA 6 V
VCE(sat)Collector-Emitter
Saturation Voltage IC = 5 A IB = 0.5 A 0.4 1 V
VBE(sat)Base-Emitter
Saturation Voltage IC = 5 A IB = -0.5 A 1.3 1.6 V
hFEDC Current Gain IC = 1 A VCE = 2 V
IC = 1.5 A VCE = 0.6 V
IC = 2 A VCE = 2 V 40
100
75
80 150
fTTransition Frequency IC = 0.5 A VCE = 5 V
f = 20 MHz 70 100 MHz
CEBO Emitter-base
Capacitance IC = 0.5 A VEB = 5 V
f = 1 MHz 300 500 pF
CCBO Collector-base
Capacitance IE = 0 VCB = 10 V
f = 1 MHz 40 100 pF
ton Turn-on Time IC = -0.5 A VCC = -20 V
IB1 = -IB2 = -50 mA 0.6 0.25 µs
ton Turn-on Time 0.6 1.2 µs
P ulsed: P ulse durat ion = 300 µs, d uty cy cle 1.5 %
BFX34
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B0.490.019
D6.60.260
E8.50.334
F9.40.370
G 5.08 0.200
H1.20.047
I0.90.035
L45
o
(typ.)
L
G
I
D A
F
E
B
H
P008B
TO-39 MECHANICAL DATA
BFX34
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
conse quences of us e of such information nor for any infringement of patent s or othe r rights of third part ies whic h may results from its use. No
license is granted by implicat ion or ot h erwise under any patent or patent rights of SGS-THOMSON Micro el ec tronics. Specifi cations mentioned
in this publicat ion are subject to change wi thout noti ce. This publicat ion sup ersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
writt en approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - A ll Rights Reserv ed
SGS-THOMSO N Microelectronics GROUP OF COMPANIES
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BFX34
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