KSA1381DSTU - Fairchild Semiconductor Corporation

2SA1381/KSA1381 — PNP Epitaxial Silicon Transistor

2SA1381/KSA1381 Rev. A1 1

March 2008

2SA1381/KSA1381

PNP Epitaxial Silicon Transistor

Applications

• Audio, Voltage Amplifier and Current Source

• CRT Display, Video Output

• General Purpose Amplifier

Features

• High Voltage : VCEO= -300V

• Low Reverse Transfer Capacitance : Cre= 2.3pF at VCB = -30V

• Excellent Gain Linearity for low THD

• High Frequency: 150MHz

• Full thermal and electrical Spice models are available

•Complement to 2SC3503/KSC3503

Absolute Maximum Ratings* Ta = 25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics* Ta=25°C unless otherwise noted

* Device mounted on min imu m pad size

hFE Classification

Symbol Parameter Ratings Units

BVCBO Collector-Base Voltage -300 V

BVCEO Collector-Emitter Voltage -300 V

BVEBO Emitter-Base Voltage -5 V

ICCollector Current(DC) -100 mA

ICP Collector Current(Pulse) -200 mA

PCTotal Device Dissipation, TC=25°C

TC=125°C7

1.2 W

TJ, TSTG Junction and Storage Temperature - 55 ~ +150 °C

Symbol Parameter Max. Units

RθJC Thermal Resistance, Junction to Case 17.8 °C/W

Classification CDEF

hFE 40 ~ 80 60 ~ 120 100 ~ 200 160 ~ 320

1TO-126

1. Emitter 2.Collector 3.Base

2SA1381/KSA1381 — PNP Epitaxial Silicon Transistor

2SA1381/KSA1381 Rev. A1 2

Electrical Characteristics* Ta=25°C unless otherwise noted

* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%

Ordering Information

* 1. Affix “-S-” means the standard TO126 Package.(see package dimensions). If the affix is ”-STS-” instead of “-S-”, that mean the short-lead TO126 package.

2. Suffix “-TU” means the tube packing, The Suffix “TU” could be replaced to other suff i x character as packing method .

Symbol Parameter Test Condition Min. Typ. Max. Units

BVCBO Collector-Base Breakdow n Voltage IC = - 10µA, IE = 0 - 300 V

BVCEO Collecto- Emitter Breakdown Voltage IC = - 1mA, IB = 0 - 300 V

BVEBO Emitter-Base Breakdown Voltage IE = - 10µA, IC = 0 - 5 V

ICBO Collector Cut-off Current VCB = - 200V, IE = 0 - 0.1 µA

IEBO Emitter Cut-off Current VEB = - 4V, IC = 0 - 0.1 µA

hFE DC Current Gain VCE = - 10V, IC = - 10mA 40 320

VCE(sat) Collector-Emitter Saturation Voltage IC = - 20mA, IB = - 2mA - 0.6 V

VBE(sat) Base-Emitter Saturation Voltage IC = - 20mA, IB = - 2mA - 1 V

fT Current Gain Bandwidth Product VCE = - 30V, IC = - 10mA 150 MHz

Cob Output Capacitance VCB = - 30V, f = 1MHz 3.1 pF

Cre Reverse Transfer Capacitance VCB = - 30V, f = 1MHz 2.3 pF

Part Number* Marking Package Packing Method Remarks

2SA1381CSTU 2SA1381C TO-126 TUBE hFE1 C grade

2SA1381DSTU 2SA1381D TO-126 TUBE hFE1 D grade

2SA1381ESTU 2SA1381E TO-126 TUBE hFE1 E grade

2SA1381FSTU 2SA1381F TO-126 TUBE hFE1 F grade

KSA1381CSTU A1381C TO-126 TUBE hFE1 C grade

KSA1381DSTU A1381D TO-126 TUBE hFE1 D grade

KSA1381ESTU A1381E TO-126 TUBE hFE1 E grade

KSA1381FSTU A1381F TO-126 TUBE hFE1 F grade

2SA1381/KSA1381 — PNP Epitaxial Silicon Transistor

2SA1381/KSA1381 Rev. A1 3

Typical Characteristics

Figure 1. Static Characteristic Figure 2. Static Characteristic

Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 5. Current Gain Bandwidth Product Figure 6. Base-Emitter On Voltage

-0 -2 -4 -6 -8 -10

-0

-4

-8

-12

-16

-20

IB = -60µA

IB = -100µA

IB = -140µA

IB = -40µA

IB = -80µA

IB = -120µA

IB = -20µA

IB = 0µA

IC[A], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

-0 -20 -40 -60 -80 -100

-0

-2

-4

-6

-8

-10

IB = -60µA

IB = -30µA

IB = -40µA

IB = -50µA

IB = -10µA

IB = -20µA

IB = 0µA

IC[A], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

-0.1 -1 -10 -100

100

VCE = -10V

hFE, DC CURRENT GAIN

IC[mA], COLLECTOR CURRENT -0.1 -1 -10 -100

-0.01

-0.1

-1

-10

IC = 10 IB

VCE(sat)

VBE(sat)

VBE(sat), VCE(sat)[V], SATU R ATION VO LTAGE

IC[mA], COLLECTOR CURRENT

-0.1 -1 -10 -100 -1000

100

1000

VCE = -30V

fT(MHz), CURRENT GAIN BANDWIDTH PRODUCT

IC[mA], COLLECTOR CURRENT

-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2

-0

-20

-40

-60

-80

-100

-120

-140

-160

VCE = -10V

IC[mA], COLLECTOR CURRENT

VBE[V], BASE-EMITTER VOLTAGE

2SA1381/KSA1381 — PNP Epitaxial Silicon Transistor

2SA1381/KSA1381 Rev. A1 4

Typical Characteristics (Continued)

Figure 7. Collector Output Capacitance Figure 8. Reverse Transfer Capacitance

Figure 9. Safe Operating Area Figure 10. Power Derating

-0.1 -1 -10 -100 -1000

0.1

100

IE=0

f=1MHz

Cob[pF], CAPACITA NC E

VCB[V], COLLECTOR-BASE VOLTAGE

-0.1 -1 -10 -100 -1000

0.1

100

f=1MHz

Cre[pF], CAPACITANCE

VCB[V], COLLECTOR-BASE VOLTAGE

1 10 100 1000

100

1000

DC (T

= 25

500

10ms

1ms

DC (T

= 25

IC MAX. (Pul se)

IC MAX.

IC[mA], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

0 25 50 75 100 125 150 175

TC=125oC

Tc=25oC

PC[W], POWER DISSIPATION

T[oC], TEMPERATURE

2SA1381/KSA1381 — PNP Epitaxial Silicon Transistor

2SA1381/KSA1381 Rev. A1 5

Package Dimensions

3.25

±0.20

8.00

±0.30

3.20

±0.10

0.75

±0.10

0.75

±0.10

2.28TYP

[2.28±0.20] 2.28TYP

[2.28±0.20]

1.60

±0.10

11.00

±0.20

3.90

±0.1

14.20MAX

16.10

±0.20

13.06

±0.30

1.75

±0.2

(0.50)

(1.00)

0.50

+0.10

–0.05

TO-126

Dimensions in Millimeters

2SA1381/KSA1381 PNP Epitaxial Silicon Transistor2SA1381/KSA1381

2SA1381/KSA1381 Rev. A1 6

Rev. I31

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PRODUCT STATUS DEFINITIONS

Definition of Terms

ACEx®

Build it Now™

CorePLUS™

CROSSVOLT™

CTL™

Current Transfer Logic™

EcoSPARK®

Fairchild®

Fairchild Semiconductor®

FACT Quiet Series™

FACT®

FAST®

FastvCore™

FPS™

FRFET®

Global Power ResourceSM

Green FPS™

Green FPS™ e-Series™

GTO™

i-Lo™

IntelliMAX™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

MicroPak™

MillerDrive™

Motion-SPM™

OPTOLOGIC®

OPTOPLANAR®

PDP-SPM™

Power220®

Power247®

POWEREDGE®

Power-SPM™

PowerTrench®

Programmable Active Droop™

QFET®

QS™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

SMART START™

SPM®

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

The Power Franchise®

TinyBoost™

TinyBuck™

TinyLogic®

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

µSerDes™

UHC®

UniFET™

VCX™

Datasheet Identification Product Status Definition

Advance Information Formative or In Design This datasheet contains the design specifications for product development.

Specifications may change in any manner without notice.

Preliminary First Production This datasheet contains preliminary data; supplementary data will be pub-

lished at a later date. Fairchild Semiconductor reserves the right to make

changes at any time without notice to improve design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves

the right to make changes at any time without notice to improve design.

Obsolete Not In Production This datasheet contains specifications on a product that has been discontin-

ued by Fairchild semiconductor. The datasheet is printed for reference infor-

mation only.