SCF2N7224T1 JANTX2N7224 JANTXV2N7224 POWER MOSFET FOR RUGGED ENVIRONMENT REF: MIL-PRF-19500/592 N-Channel 100 Volt < 0.07 Ohms 34 Amp TO-254AA DESCRIPTION SEMICOA's MOSFET technology is designed for rugged environments providing excellent long term reliability. SEMICOA's long heritage providing military grade technology and packaging allows these devices to be used for ground based telecommunications, vehicles, ships, weapon systems and other application where failure is not an option. FEATURES Available in JANTX and JANTXV equivalent levels RDS(ON) < 70 m Simple Drive Requirements Low Gate Charge Ease of Paralleling Hermetically Sealed Die Available ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS lD @ VGS = 10 V, TC = 25 C Continuous Drain Current 34 lD @ VGS = 10 V , TC = 100 C Continuous Drain Current 21 IDM Pulsed Drain Current (1) 136 PD@ TC = 25 C Max Power Dissipation 150 W Linear Derating Factor 1.2 W/C VGS Gate to Source Voltage 20 V EAS Single Pulse Avalanche Energy (2) 150 mJ IAR Avalanche Current (1) 34 A TJ TSTG Operating Junction Storage Temperature Range Lead Temperature Weight -55 to 150 A C 300 C 9.3 typical g For footnotes refer to the last page 333 McCormick Avenue Costa Mesa, CA 92626 714-979-1900 www.semicoa.com sales@semicoa.com Copyright 2012 Rev. 1 SCF2N7224T1 Electrical Characteristics @ TJ 25C (unless otherwise specific) PARAMETER MIN TYP MAX UNITS TEST CONDITIONS BVDSS Drain to Source Breakdown Voltage 100 - - V BVDSS/TJ Temperature Coefficient of Breakdown Voltage - 0.13 - V/C RDS(ON) Static Drain to Source On-State Resistance - - 0.07 VGS = 10 V, ID = 21 A (4) VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, ID = 250 A gsf Forward Transconductance 9.0 - - S() IDSS Zero Gate Voltage Drain Current - - 25 - - 250 A VGS = 0 V, ID = 1.0 mA Reference to 25 C, ID = 1.0 mA VDS 15 V, IDS = 21 A (4) VDS = 80 V, VGS = 0 V VDS = 80 V, VGS = 0 V, Tj = 125 C IGSSF Gate to Source Leakage Forward 100 nA VGS = 20 V IGSSR Gate to Source Leakage Reverse -100 nA VGS = -20 V Qg Total Gate Charge - - 125 Qgs Gate to Source Charge - - 22 nC VGS = 10 V, ID = 34 A , VDS = 50 V Qgd Gate to Drain (Miller) Charge - - 65 Td(on) Turn On Delay Time - - 35 Tr Rise Time - - 190 Td(off) Turn Off Delay Time - - 170 nS VDD = 50 V, ID = 34 A, VGS = 10 V, RG = 2.35 Tf Fall time - - 130 CISS Input Capacitance - - - COSS Output Capacitance - - - pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz CRSS Reverse Transfer Capacitance - - - Source-Drain Diode Rating and Characteristics PARMETER MIN TYP MAX UNITS IS Continuous Source Current (Body Diode) - - 34 A ISM Pulse Source Current (Body Diode) - - 136 A - - 1.8 V Ti = 25 C, IS = 34 A, VGS = 0 V (4) - - 500 nS Ti = 25 C, IF = 34 A, di/dt 100 A/ S, VDD 50 V (4) VSD Diode Forward Voltage Trr Reverse Recovery Time TEST CONDITIONS For Footnotes refer to the last page 333 McCormick Avenue Costa Mesa, CA 92626 714-979-1900 www.semicoa.com sales@semicoa.com Copyright 2012 Rev. 1 SCF2N7224T1 TO-254AA Case Outline and Dimensions Dimensions Symbol Pin Assignment Term 1 Drain Term 2 Source Term 3 Gate Inches Millimeters Min Max Min Max BL .535 .545 13.59 13.84 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .510 .570 12.95 14.48 LO .150 BSC 3.81 BSC LS .150 BSC 3.81 BSC MHD .139 .149 3.53 3.78 MHO .665 .685 16.89 17.40 TL .790 .800 20.07 20.32 TT .040 .050 1.02 1.27 TW .535 .545 13.59 13.84 CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. Footnotes: 1. 2. 3. 4. Repetitive Rating: Pulse width limited by maximum junction temperature VDD = 25 V starting TJ = 25 C, L 200 H, Peak IL = 34 A ISD 34 A, di/dt 70 A/S, VDD 100 V, Tj 150C, Rg = 2.35 Pulse width 300 S; Duty cycle 2% Visit us at www.semicoa.com for sales and contact information. Data and specification subject to change without notice. 333 McCormick Avenue Costa Mesa, CA 92626 714-979-1900 www.semicoa.com sales@semicoa.com Copyright 2012 Rev. 1