MCR100-6 - ON Semiconductor

 Semiconductor Components Industries, LLC, 2000

May, 2000 – Rev. 4 1Publication Order Number:

MCR100/D

MCR100 Series

Preferred Device

Sensitive Gate

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

PNPN devices designed for high volume, line-powered consumer

applications such as relay and lamp drivers, small motor controls, gate

drivers for larger thyristors, and sensing and detection circuits.

Supplied in an inexpensive plastic TO-226AA package which is

readily adaptable for use in automatic insertion equipment.

•Sensitive Gate Allows Triggering by Microcontrollers and Other

Logic Circuits

•Blocking Voltage to 600 Volts

•On–State Current Rating of 0.8 Amperes RMS at 80°C

•High Surge Current Capability — 10 Amperes

•Minimum and Maximum Values of IGT, VGT and IH Specified for

Ease of Design

•Immunity to dV/dt — 20 V/µsec Minimum at 110°C

•Glass-Passivated Surface for Reliability and Uniformity

•Device Marking: Device Type, e.g., MCR100–3, Date Code

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

Peak Repetitive Off–State Voltage(1)

(TJ =

40 to 110°C, Sine W ave, 50 to

60 Hz; Gate Open) MCR100–3

MCR100–4

MCR100–6

MCR100–8

VDRM,

VRRM 100

200

400

600

Volts

On-State RMS Current

(TC = 80°C) 180° Conduction Angles IT(RMS) 0.8 Amp

Peak Non-Repetitive Surge Current

(1/2 Cycle, Sine W ave, 60 Hz,

TJ = 25°C)

ITSM 10 Amps

Circuit Fusing Consideration (t = 8.3 ms) I2t 0.415 A2s

Forward Peak Gate Power

(TA = 25°C, Pulse Width

1.0 µs) PGM 0.1 Watt

Forward Average Gate Power

(TA = 25°C, t = 8.3 ms) PG(AV) 0.10 Watt

Forward Peak Gate Current

(TA = 25°C, Pulse Width

1.0 µs) IGM 1.0 Amp

Reverse Peak Gate Voltage

(TA = 25°C, Pulse Width

1.0 µs) VGRM 5.0 Volts

Operating Junction Temperature Range

@ Rate VRRM and VDRM TJ–40 to

110 °C

Storage Temperature Range Tstg –40 to

150 °C

(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

SCRs

0.8 AMPERES RMS

100 thru 600 VOLTS

Preferred devices are recommended choices for future use

and best overall value.

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TO–92 (TO–226AA)

CASE 029

STYLE 10

PIN ASSIGNMENT

Gate

Anode

Cathode

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

MCR100 Series

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THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance — Junction to Case

— Junction to Ambient RθJC

RθJA 75

200 °C/W

Lead Solder Temperature

(

1/16″ from case, 10 secs max) TL260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Peak Repetitive Forward or Reverse Blocking Current(1) TC = 25°C

(VD = Rated VDRM and VRRM; RGK = 1 kΩ)T

C = 110°CIDRM, IRRM —

——

—10

100 µA

ON CHARACTERISTICS

Peak Forward On–State Voltage(*)

(ITM = 1.0 Amp Peak @ TA = 25°C) VTM — — 1.7 Volts

Gate Trigger Current (Continuous dc)(2) TC = 25°C

(VAK = 7.0 Vdc, RL = 100 Ohms) IGT — 40 200 µA

Holding Current(2) TC = 25°C

(VAK = 7.0 Vdc, Initiating Current = 20 mA) TC = –40°CIH—

—0.5

—5.0

10 mA

Latch Current TC = 25°C

(VAK = 7.0 V, Ig = 200 µA) TC = –40°CIL—

—0.6

—10

15 mA

Gate Trigger Voltage (Continuous dc)(2) TC = 25°C

(VAK = 7.0 Vdc, RL = 100 Ohms) TC = –40°CVGT —

—0.62

—0.8

1.2 Volts

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Off–State Voltage

(VD = Rated VDRM, Exponential W aveform, RGK = 1000 Ohms,

TJ = 110°C)

dV/dt 20 35 — V/µs

Critical Rate of Rise of On–State Current

(IPK = 20 A; Pw = 10 µsec; diG/dt = 1 A/µsec, Igt = 20 mA) di/dt — — 50 A/µs

*Indicates Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%.

(1) RGK = 1000 Ohms included in measurement.

(2) Does not include RGK in measurement.

MCR100 Series

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+ Current

+ Voltage

VTM

IDRM at VDRM

Symbol Parameter

VDRM Peak Repetitive Off State Forward Voltage

IDRM Peak Forward Blocking Current

VRRM Peak Repetitive Off State Reverse Voltage

IRRM Peak Reverse Blocking Current

VTM Peak on State Voltage

IHHolding Current

Voltage Current Characteristic of SCR

Anode +

on state

Reverse Blocking Region

(off state)

Reverse Avalanche Region

Anode –

Forward Blocking Region

IRRM at VRRM

(off state)

Figure 1. Typical Gate Trigger Current versus

Junction Temperature

TJ, JUNCTION TEMPERATURE (°C)

100

1105035205–10–25–40

GATE TRIGGER CURRENT ( A)

Figure 2. Typical Gate Trigger Voltage versus

Junction Temperature

TJ, JUNCTION TEMPERATURE (°C) 110655035205–10–25–40

0.8

0.7

0.6

0.5

0.4

0.3

GATE TRIGGER VOL TAGE (VOLTS)

0.2

0.9

1.0

958065

9580

MCR100 Series

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Figure 3. Typical Holding Current versus

Junction Temperature

TJ, JUNCTION TEMPERATURE (°C)

1000

100

110655035205–10–25–40

HOLDING CURRENT ( A)

Figure 4. Typical Latching Current versus

Junction Temperature

Figure 5. Typical RMS Current Derating

IT(RMS), RMS ON-STATE CURRENT (AMPS)

120

110

100

0.50.40.30.20.10

TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)°

Figure 6. Typical On–State Characteristics

VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)3.53.22.32.01.71.41.10.80.5

IT, INSTANT ANEOUS ON–STATE CURRENT (AMPS)

0.140

9580

TJ, JUNCTION TEMPERATURE (°C)

1000

100

110655035205–10–25–40

LATCHING CURRENT ( A)

10 9580

30°60°90°120°

180°

2.92.6

MAXIMUM @ TJ = 110°C

MAXIMUM @ TJ = 25°C

MCR100 Series

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TO–92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL

H2A H2A

F1 F2

P2 P2

P1 P

H2B H2B

H4 H5

Figure 7. Device Positioning on Tape

Specification

Inches Millimeter

Symbol Item Min Max Min Max

DTape Feedhole Diameter 0.1496 0.1653 3.8 4.2

D2 Component Lead Thickness Dimension 0.015 0.020 0.38 0.51

F1, F2 Component Lead Pitch 0.0945 0.110 2.4 2.8

HBottom of Component to Seating Plane .059 .156 1.5 4.0

H1 Feedhole Location 0.3346 0.3741 8.5 9.5

H2A Deflection Left or Right 0 0.039 0 1.0

H2B Deflection Front or Rear 0 0.051 0 1.0

H4 Feedhole to Bottom of Component 0.7086 0.768 18 19.5

H5 Feedhole to Seating Plane 0.610 0.649 15.5 16.5

LDefective Unit Clipped Dimension 0.3346 0.433 8.5 11

L1 Lead Wire Enclosure 0.09842 — 2.5 —

PFeedhole Pitch 0.4921 0.5079 12.5 12.9

P1 Feedhole Center to Center Lead 0.2342 0.2658 5.95 6.75

P2 First Lead Spacing Dimension 0.1397 0.1556 3.55 3.95

TAdhesive Tape Thickness 0.06 0.08 0.15 0.20

T1 Overall Taped Package Thickness — 0.0567 — 1.44

T2 Carrier Strip Thickness 0.014 0.027 0.35 0.65

WCarrier Strip Width 0.6889 0.7481 17.5 19

W1 Adhesive Tape Width 0.2165 0.2841 5.5 6.3

W2 Adhesive Tape Position .0059 0.01968 .15 0.5

NOTES:

1. Maximum alignment deviation between leads not to be greater than 0.2 mm.

2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 1 1 mm.

3. Component lead to tape adhesion must meet the pull test requirements.

4. Maximum non–cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.

5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive.

6. No more than 1 consecutive missing component is permitted.

7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component.

8. Splices will not interfere with the sprocket feed holes.

MCR100 Series

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ORDERING & SHIPPING INFORMATION: MCR100 Series packaging options, Device Suffix

U.S. Europe

Equivalent Shipping Description of TO92 Tape Orientation

MCR100–3,4,6,8

MCR100–6RLRA

MCR100–6RLRM MCR100–3RL,6RL,8RL

MCR100–6ZL1

Bulk in Box (5K/Box)

Radial Tape and Reel (2K/Reel)

Radial Tape and Fan Fold Box

(2K/Box)

N/A, Bulk

Round side of TO92 and adhesive tape visible

Flat side of TO92 and adhesive tape visible

MCR100 Series

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PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

SECTION X–X

SEATING

PLANE DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.175 0.205 4.45 5.20

B0.170 0.210 4.32 5.33

C0.125 0.165 3.18 4.19

D0.016 0.021 0.407 0.533

G0.045 0.055 1.15 1.39

H0.095 0.105 2.42 2.66

J0.015 0.020 0.39 0.50

K0.500 ––– 12.70 –––

L0.250 ––– 6.35 –––

N0.080 0.105 2.04 2.66

P––– 0.100 ––– 2.54

R0.115 ––– 2.93 –––

V0.135 ––– 3.43 –––

STYLE 10:

PIN 1. CATHODE

2. GATE

3. ANODE

TO–92 (TO–226AA)

CASE 029–11

ISSUE AJ

MCR100 Series

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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes

without further notice to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular

purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,

including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “T ypicals” must be

validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.

SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or

death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold

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attorney fees arising out of, directly or indirectly , any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim

alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Af firmative Action Employer.

PUBLICATION ORDERING INFORMATION

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4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031

Phone: 81–3–5740–2745

Email: r14525@onsemi.com

ON Semiconductor Website : http://onsemi.com

For additional information, please contact your local

Sales Representative.

MCR100/D

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Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada

Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada

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