AMPLIFIERS - LOW NOISE - CHIP
1
1 - 8
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC341
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 30 GHz
v01.1007
General Description
Features
Functional Diagram
The HMC341 chip is a GaAs MMIC Low Noise
Ampli er (LNA) which covers the frequency range
of 24 to 30 GHz. The chip can easily be integrated
into Multi-Chip Modules (MCMs) due to its small
(1.51 mm2) size. The chip utilizes a GaAs PHEMT
process offering 13 dB gain from a single bias supply
of + 3V @ 30 mA with a noise  gure of 2.5 dB. All
data is with the chip in a 50 ohm test  xture connected
via 0.025 mm (1 mil) diameter wire bonds of minimal
length 0.31 mm (<12 mils).
Excellent Noise Figure: 2.5 dB
Gain: 13 dB
Single Supply: +3V @ 30 mA
Small Size: 1.42 x 1.06 x 0.1 mm
Electrical Speci cations, TA = +25° C, Vdd = +3V
Typical Applications
The HMC341 is ideal for:
• Millimeterwave Point-to-Point Radios
• LMDS
• VSAT & SATCOM
Parameter Min. Typ. Max. Units
Frequency Range 24 - 30 GHz
Gain 10 13 16 dB
Gain Variation Over Temperature 0.03 0.04 dB/°C
Noise Figure 26 - 30 GHz
24 - 26 GHz
2.5
2.9
3.5
3.9
dB
dB
Input Return Loss 9 13 dB
Output Return Loss 9 13 dB
Reverse Isolation 25 30 dB
Output Power for 1dB Compression (P1dB) 2 6 dBm
Saturated Output Power (Psat) 6 10 dBm
Output Third Order Intercept (IP3) 12 16 dBm
Supply Current (Idd) 30 40 mA
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LOW NOISE - CHIP
1
1 - 9
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Noise Figure
vs. Temperature @ Vdd = +3V
Return Loss @ Vdd = +3V Return Loss @ Vdd = +5V
Gain vs. Temperature @ Vdd = +3V Gain vs. Temperature @ Vdd = +5V
Noise Figure
vs. Temperature @ Vdd = +5V
0
5
10
15
20
22 24 26 28 30 32
+25C
-55C
+85C
GAIN (dB)
FREQUENCY (GHz)
-35
-30
-25
-20
-15
-10
-5
0
22 24 26 28 30 32
S11
S22
RETURN LOSS (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
22 24 26 28 30 32
+25C
-55C
+85C
NOISE FIGURE (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
22 24 26 28 30 32
+25C
-55C
+85C
NOISE FIGURE (dB)
FREQUENCY (GHz)
-35
-30
-25
-20
-15
-10
-5
0
22 24 26 28 30 32
S11
S22
RETURN LOSS (dB)
FREQUENCY (GHz)
0
5
10
15
20
22 24 26 28 30 32
+25C
-55C
+85C
GAIN (dB)
FREQUENCY (GHz)
HMC341
v01.1007
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 30 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LOW NOISE - CHIP
1
1 - 10
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Output IP3 @ Vdd = +3V Output IP3 @ Vdd = +5V
Isolation
Gain & Noise Figure
vs. Supply Voltage @ 28 GHz
Output P1dB @ Vdd = +3V Output P1dB @ Vdd = +5V
0
2
4
6
8
10
12
14
16
22 24 26 28 30 32
+25 C
-55 C
+85 C
P1dB (dBm)
FREQUENCY (GHz)
-70
-60
-50
-40
-30
-20
-10
0
22 24 26 28 30 32
Vdd = +3V
Vdd = +5V
ISOLATION (dB)
FREQUENCY (GHz)
0
5
10
15
20
25
22 24 26 28 30 32
+25 C
-55 C
+85 C
IP3 (dBm)
FREQUENCY (GHz)
0
5
10
15
20
25
22 24 26 28 30 32
+25 C
-55 C
+85 C
IP3 (dBm)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
22 24 26 28 30 32
+25 C
-55 C
+85 C
P1dB (dBm)
FREQUENCY (GHz)
12
12.2
12.4
12.6
12.8
13
13.2
13.4
13.6
2.2
2.4
2.6
2.8
3
3.2
3.4
3.6
3.8
2.5 3 3.5 4 4.5 5 5.5
GAIN dB)
NOISE FIGURE (dB)
Vdd SUPPLY VOLTAGE (Vdc)
HMC341
v01.1007
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 30 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LOW NOISE - CHIP
1
1 - 11
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Outline Drawing
Absolute Maximum Ratings
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
Drain Bias Voltage (Vdd) +5.5 Vdc
RF Input Power (RFIN)(Vdd = +3.0 Vdc) +3 dBm
Channel Temperature 175 °C
Continuous Pdiss (T = 85 °C)
(derate 3.44 mW/°C above 85 °C) 0.310 W
Thermal Resistance
(channel to die bottom) 290 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information [1]
Standard Alternate
GP-2 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
HMC341
v01.1007
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 30 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LOW NOISE - CHIP
1
1 - 12
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Assembly Diagrams
Pad Number Function Description Interface Schematic
1 RFIN This pad is AC coupled and matched to 50 Ohms.
2 RFOUT This pad is AC coupled and matched to 50 Ohms.
3Vdd
Power Supply for the 2-stage ampli er. An external RF bypass capaci-
tor of 100 - 300 pF is required. The bond length to the capacitor should
be as short as possible. The ground side of the capacitor should be
connected to the housing ground.
Pad Descriptions
HMC341
v01.1007
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 30 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LOW NOISE - CHIP
1
1 - 13
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or
with conductive epoxy (see HMC general Handling, Mounting, Bonding
Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin  lm substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin  lm substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of the
die is coplanar with the surface of the substrate. One way to accomplish
this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick
molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should brought as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
An RF bypass capacitor should be used on the Vdd input. A 100 pF single
layer capacitor (mounted eutectically or by conductive epoxy) placed no
further than 0.762mm (30 Mils) from the chip is recommended.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD
protective containers, and then sealed in an ESD protective bag for
shipment. Once the sealed ESD protective bag has been opened, all die
should be stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias
cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or  ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and  at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy  llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom-
mended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
HMC341
v01.1007
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 30 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D