SILICON EPITAXIAL PLANAR TYPE ULTRA HIGH SPEED SWITCHING APPLICATION. 1$$184 Unit in mm 1123 Small Package SC-59 2503 Low Forward Voltage VF=0.9V(Typ.) . Fast Reverse Recovery Time trr=l1.6ns(Typ.) Small Total Capacitance Cr=0.9pF(Typ.) w 3] o| & H n a Oo MAXIMUM RATINGS (Ta=25C) | : =O CHARACTERISTIC SYMBOL | RATING | UNIT a + 96 oo Maximum(Peak) Reverse Voltage VRM 85 V +! L = Reverse Voltage VR 80 Vv f Maximum(Peak) Forward Current lEM 300% mA 7 > Average Forward Current lo 100* mA 1q 53 1. ANODE Surge Current (10ms) IFSM 2* A 2. ANODE 2q 3. CATHODE Power Dissipation P 150 mW JEDEC _ Junction Temperature Tj 125 C ELAJ SC_59 Storage Temperature Tstg -55~125 C TOSHIBA 1~3GI1F * Unit Rating. Total Rating=Unit Rating x1.5 Weight 0. 013g ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.}| TYP.| MAX.] UNIT VF(1) IF=lmA - 0.60 - Forward Voltage VF(2) TF=10mA = 0.72 - Vv VF(3) Ip=LOOmA - 0.9 |1.20 I VR=30V - - 0.1 Reverse Current RCL) R HA IR(2) | VR=80V - - 0.5 Total Capacitance ~| cy VR=0, f=LMHz - 3.0 pF Reverse Recovery Time trr Ip=lOmA, Fig.l - l. 4.0 ns Marking A B 3 G 1$S184 Ip (mA) FORWARD CURRENT TOTAL CAPACITANCE Cry (pF) Fig. If VF 10 10 < 10? & mm 10 & 107! Zz g 1 Bio? wQ wn B = -3 10 2 10 a 190? 1074 0.2 0.4 06 08 1.0 1.2 0 FORWARD VOLTAGE Vp (V) Cr Vr oe a wy 2 B z [<3] > oO Oo a] me QQ n a 0 5 5 0.1 03 1 3 10 30-100 am Ol REVERSE VOLTAGE Vy (V) 1 REVERSE RECOVERY TIME (tyr) TEST CIRCUIT INPUT WAVEFORM INPUT 0.01 4F DUT 0 OUTPUT G a z a OSCILOSCOPE -6V - (RIn= 500) ww is E Ons PULSE GENERATOR ( Rout = 500 ) 1124 Ip VR Ta=100 75 50 25 Ivy MAX. 20 40 60 8 REVERSE VOLTAGE Vp (V) tre IF 0.3 1 3 10 30 50 FORWARD CURRENT If (mA) OUTPUT WAVEFORM Ip=10ma} | 0.1 1 Ip R