BSS169
SIPMOS® Small-Signal-Transistor
Features
• N-channel
• Depletion mode
• dv/dt rated
• Available with VGS(th) indicator on reel
• Pb-free lead-plating; RoHS compliant
• Halogen-free according to AEC61249-2-21
• Qualified according to AEC Q101
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
IDTA=25 °C 0.17 A
TA=70 °C 0.14
Pulsed drain current
ID,pulse TA=25 °C 0.68
Reverse diode dv/dtdv/dt
ID=0.19 A, VDS=20 V,
di/dt=200 A/µs,
Tj,max=150 °C
6 kV/µs
Gate source voltage
VGS ±20 V
ESD Class JESD22-A114-HBM Class 0
Power dissipation
Ptot TA=25 °C 0.36 W
Operating and storage temperature
Tj, Tstg -55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
1) see table on next page and diagram 11
Value
VDS
100
V
RDS(on),max
12
IDSS,min
0.09
A
Product Summary
PG-SOT-23
Type
Package
Pb-free
Tape and Reel Information
Marking
BSS169
PG-SOT-23
Yes
H6327: 3000 pcs/reel
SFs
BSS169
PG-SOT-23
Yes
H6906: 3000 pcs/reel sorted in VGS(th) bands 1)
SFs
Rev. 1.8 page 1 2015-06-10
BSS169
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - ambient
RthJA minimal footprint - - 250 K/W
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V(BR)DSS VGS=-10 V, ID=250 µA 100 - - V
Gate threshold voltage
VGS(th) VDS=3 V, ID=50 µA -2.9 -2.2 -1.8
Drain-source cutoff current
ID(off)
VDS=100 V,
VGS=-10 V, Tj=25 °C
- - 0.1 µA
VDS=100 V,
VGS=-10 V, Tj=125 °C
- - 10
Gate-source leakage current
IGSS VGS=20 V, VDS=0 V - - 10 nA
On-state drain current
IDSS VGS=0 V, VDS=10 V 90 - - mA
Drain-source on-state resistance
RDS(on) VGS=0 V, ID=0.05 A -5.3 12 W
VGS=10 V, ID=0.19 A -2.9
Transconductance
gfs
|VDS|>2|ID|RDS(on)max,
ID=0.15 A
0.20 - S
Threshold voltage VGS(th) sorted in bands2)
J
VGS(th) VDS=3 V, ID=50 µA -2 - -1.8 V
K -2.15 - -1.95
L -2.3 - -2.1
M -2.45 - -2.25
N -2.6 - -2.4
2) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific
band cannot be ordered separately.
Values
Rev. 1.8 page 2 2015-06-10
BSS169
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
Ciss -51 68 pF
Output capacitance
Coss - 9 13
Reverse transfer capacitance
Crss - 4 7
Turn-on delay time
td(on) -2.9 4.2 ns
Rise time
tr-2.7 4.0
Turn-off delay time
td(off) -11 17
Fall time
tf-27 40
Gate Charge Characteristics
Gate to source charge
Qgs -0.12 0.16 nC
Gate to drain charge
Qgd -0.9 1.4
Gate charge total
Qg-2.1 2.8
Gate plateau voltage
Vplateau - -0.43 - V
Reverse Diode
Diode continous forward current IS- - 0.19 A
Diode pulse current
IS,pulse - - 0.76
Diode forward voltage
VSD
VGS=-10 V, IF=0.19 A,
Tj=25 °C
-0.82 1.2 V
Reverse recovery time
trr -20.5 25.6 ns
Reverse recovery charge
Qrr -9.7 12.1 nC
VR=50 V, IF=0.12 A,
diF/dt=100 A/µs
TA=25 °C
Values
VGS=-10 V, VDS=25 V,
f=1 MHz
VDD=50 V,
VGS=-3…7 V,
ID=0.12 A, RG,ext=6 W
VDD=80 V, ID=0.12 A,
VGS=-3 to 7 V
Rev. 1.8 page 3 2015-06-10
BSS169
1 Power dissipation 2 Drain current
Ptot=f(TA)ID=f(TA); VGS≥10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TA=25 °C; D=0 ZthJA=f(tp)
parameter: tpparameter: D=tp/T
10 µs
100 µs
1 ms
10 ms
DC
100 101 102 103
10-3
10-2
10-1
100
101
ID [A]
VDS [V]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-4 10-3 10-2 10-1 100 101 102
100
101
102
103
ZthJA [K/W]
tp [s]
0
0.1
0.2
0.3
0.4
0.5
0.6
040 80 120 160
Ptot [W]
TA [°C]
0
0.04
0.08
0.12
0.16
0.2
040 80 120 160
ID [A]
TA [°C]
Rev. 1.8 page 4 2015-06-10
BSS169
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
-0.2 V
-0.1 V
0 V
0.1 V
0.2 V
0.5 V
1 V
10 V
0
2
4
6
8
10
12
14
0 0.1 0.2 0.3 0.4 0.5
RDS(on) [W]
ID [A]
0
0.1
0.2
0.3
0.4
0.5
-2 -1 0 1 2
ID [A]
VGS [V]
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.00 0.10 0.20 0.30 0.40
gfs [S]
ID [A]
-0.2 V
-0.1 V
0 V
0.1 V
0.2 V
0.5 V
1 V
10 V
0
0.1
0.2
0.3
0.4
0.5
0 2 4 6 8 10
ID [A]
VDS [V]
Rev. 1.8 page 5 2015-06-10
BSS169
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=0.05 A; VGS=0 V VGS(th)=f(Tj); VDS=3 V; ID=50 µA
parameter: ID
11 Threshold voltage bands 12 Typ. capacitances
ID=f(VGS); VDS=3 V; Tj=25 °C C=f(VDS); VGS=-10 V; f=1 MHz
50 µA
J
K L M N
0.01
0.1
1
10
-3 -2.5 -2 -1.5 -1
ID [mA]
VGS [V]
typ
98 %
0
4
8
12
16
20
24
-60 -20 20 60 100 140 180
RDS(on) [W]
Tj [°C]
typ
Max
Min
-3.5
-3.1
-2.7
-2.3
-1.9
-1.5
-1.1
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj [°C]
Ciss
Coss
Crss
100
101
102
103
010 20 30
C [pF]
VDS [V]
Rev. 1.8 page 6 2015-06-10
BSS169
13 Forward characteristics of reverse diode 15 Typ. gate charge
IF=f(VSD)VGS=f(Qgate); ID=0.12 A pulsed
parameter: Tjparameter: VDD
16 Drain-source breakdown voltage
VBR(DSS)=f(Tj); ID=250 µA
80
100
120
-60 -20 20 60 100 140 180
VBR(DSS) [V]
Tj [°C]
0.2 VDS(max)
0.5 VDS(max)
0.8 VDS(max)
-4
-2
0
2
4
6
8
0 0.5 1 1.5 2 2.5
VGS [V]
Qgate [nC]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
10-4
10-3
10-2
10-1
100
0 0.5 1 1.5
IF [A]
VSD [V]
Rev. 1.8 page 7 2015-06-10
BSS169
Package Outline:
Footprint: Packaging:
Dimensions in mm
Rev. 1.8 page 8 2015-06-10
BSS169
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 1.8 page 9 2015-06-10