© 2011 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C 100 V
VDGR TJ= 25°C to 175°C, RGS = 1MΩ100 V
VGSS Continuous ± 20 V
VGSM Transient ± 30 V
ID25 TC= 25°C (Chip Capability) 360 A
IL(RMS) External Lead Current Limit 160 A
IDM TC= 25°C, Pulse Width Limited by TJM 900 A
IATC= 25°C 100 A
EAS TC= 25°C3J
PDTC= 25°C 1250 W
dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 20 V/ns
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +175 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-264) 1.13/10 Nm/lb.in.
FCMounting Force (PLUS247) 20..120 /4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 100 V
VGS(th) VDS = VGS, ID = 3mA 2.5 4.5 V
IGSS VGS = ± 20V, VDS = 0V ± 200 nA
IDSS VDS = VDSS, VGS = 0V 25 μA
TJ = 150°C 2.5 mA
RDS(on) VGS = 10V, ID = 100A, Notes 1 & 2 2.9 mΩ
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK360N10T
IXFX360N10T
VDSS = 100V
ID25 = 360A
RDS(on) ≤≤
≤≤
≤ 2.9mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 130ns
DS100210A(02/11)
Features
zInternational Standard Packages
zHigh Current Handling Capability
zFast Intrinsic Diode
zAvalanche Rated
zLow RDS(on)
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zSynchronous Recification
zDC-DC Converters
zBattery Chargers
zSwitch-Mode and Resonant-Mode
Power Supplies
zDC Choppers
zAC Motor Drives
zUninterruptible Power Supplies
zHigh Speed Power Switching
Applications
GigaMOSTM Trench
HiperFETTM
Power MOSFET
G = Gate D = Drain
S = Source Tab = Drain
PLUS247 (IXFX)
TO-264 (IXFK)
S
G
D Tab
Tab
G
S
D
Preliminary Technical Information
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK360N10T
IXFX360N10T
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 60A, Note 1 110 180 S
Ciss 33 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 3160 pF
Crss 400 pF
RGi Gate Input Resistance 1.20 Ω
td(on) 47 ns
tr 100 ns
td(off) 80 ns
tf 160 ns
Qg(on) 525 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 145 nC
Qgd 165 nC
RthJC 0.12 °C/W
RthCS 0.05 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 360 A
ISM Repetitive, Pulse Width Limited by TJM 1440 A
VSD IF = 100A, VGS = 0V, Note 1 1.2 V
trr 130 ns
IRM 6.60 A
QRM 0.33 μC
IF = 100A, VGS = 0V
-di/dt = 100A/μs
VR = 50V
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 100A
RG = 1Ω (External)
Notes 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Includes lead resistance.
TO-264 Outline
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247TM Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Terminals: 1 - Gate
2 - Drain
3 - Source
4 - Drain
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
© 2011 IXYS CORPORATION, All Rights Reserved
IXFK360N10T
IXFX360N10T
Fi g . 1. Ou tp u t C h aracteri sti cs @ T
J
= 25ºC
0
60
120
180
240
300
360
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
10V
8V
7V
4V
6V
5V
5.5V
Fi g . 3. Ou tp u t C h aracteri sti cs @ T
J
= 150ºC
0
60
120
180
240
300
360
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
10V
8V
7V
5
V
6
V
4
V
Fig. 4. R
DS(on)
Normalized to I
D
= 180A Valu e
vs. Ju n cti on Temper atu r e
0.2
0.6
1.0
1.4
1.8
2.2
2.6
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 360A
I
D
= 180A
Fi g . 5. N o r mali z ed R
DS(on)
vs. D r ain C u r r en t
0.6
1.0
1.4
1.8
2.2
2.6
3.0
0 40 80 120 160 200 240 280 320 360
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 175ºC
T
J
= 25ºC
Fi g . 6. D r ai n C u rren t vs. C a se Temper atu r e
0
20
40
60
80
100
120
140
160
180
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit
Fi g . 2. Exten d ed Outpu t C h ar ac ter i sti cs @ T
J
= 25ºC
0
50
100
150
200
250
300
350
400
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
10V
8V
5V
5.5V
6V
7V
4V
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK360N10T
IXFX360N10T
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
3.0 3.5 4.0 4.5 5.0 5.5 6.0
V
GS
- Volts
I
D
- Amperes
T
J
= 150ºC
- 40ºC
25ºC
Fig. 8. T ransconductance
0
50
100
150
200
250
300
350
0 20 40 60 80 100 120 140 160 180 200
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
150ºC
25ºC
Fig. 9. Forwar d Voltage Drop of Intrinsic Diode
0
40
80
120
160
200
240
280
320
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 50 100 150 200 250 300 350 400 450 500 550
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 50V
I
D
= 180A
I
G
= 10mA
Fig. 11. Capacitance
0.1
1.0
10.0
100.0
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - NanoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. F o r wa r d -Bias Safe Op eratin g Ar ea
1
10
100
1,000
110100
V
DS
- Volts
I
D
- Amperes
25µs
100µs
1ms
10ms
R
DS
(
on
)
Limit
T
J
= 175ºC
T
C
= 25ºC
Single Pulse 100ms
External Lead Limit
DC
© 2011 IXYS CORPORATION, All Rights Reserved
IXFK360N10T
IXFX360N10T
Fig . 14. R esistive Tur n -on Ri se Time
vs. D r ain C u r r en t
40
80
120
160
200
240
280
40 60 80 100 120 140 160 180 200
I
D
- Amperes
t
r
- Nanoseconds
T
J
= 25ºC
T
J
= 125ºC
R
G
= 1 , V
GS
= 10V
V
DS
= 50V
Fig. 15. Resistive Turn -on Sw i tchin g Times
vs. Gate Resistance
0
100
200
300
400
500
600
700
12345678910
R
G
- Ohms
t
r
- Nanoseconds
0
30
60
90
120
150
180
210
t
d
(
on
)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 50V
I
D
= 100A
I
D
= 200A
Fi g . 16. R esi st iv e Tu r n -o f f Swi tch i n g Ti mes
vs. Junction Tem perature
100
150
200
250
300
350
400
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
60
70
80
90
100
110
120
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1, V
GS
= 10V
V
DS
= 50V
I
D
= 100A
I
D
= 200A
Fig. 17. Resistive Turn -off Swi tchin g Times
vs. D r ai n Cu r r en t
0
50
100
150
200
250
300
350
400
40 60 80 100 120 140 160 180 200
I
D
- Amperes
t
f
- Nanoseconds
60
70
80
90
100
110
120
130
140
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1, V
GS
= 10V
V
DS
= 50V
T
J
= 25ºC
T
J
= 125ºC
Fig. 13. Resistive Turn - o n Rise Time
vs. Ju nctio n Temp er atu r e
40
80
120
160
200
240
280
320
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 1 , V
GS
= 10V
V
DS
= 50V
I
D
= 200A
I
D
= 100A
Fig . 18. R esistive Tur n -off Switchi ng Ti mes
vs. Gate Resistance
100
200
300
400
500
600
700
12345678910
R
G
- Ohms
t
f
- Nanoseconds
50
150
250
350
450
550
650
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 50V
I
D
= 200A
I
D
= 100A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK360N10T
IXFX360N10T
IXYS REF:F_360N10T(8V)9-23-09
Fi g . 19. Maximum Tran si en t Thermal I mped an ce
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fi g . 19. Maximum Tran si en t Thermal I mped an ce
.sadgsfgsf
0.200
