Vishay Siliconix
DG211B, DG212B
Document Number: 70040
S11-0179-Rev. J, 07-Feb-11
www.vishay.com
1
Improved Quad CMOS Analog Switches
FEATURES
• ± 22 V supply voltage rating
• TTL and CMOS compatible logic
• Low on-resistance - RDS(on): 50
• Low leakage - ID(on): 20 pA
• Single supply operation possible
• Extended temperature range
• Fast switching - tON: 120 ns
• Low charge injection - Q: 1 pC
BENEFITS
• Wide analog signal range
• Simple logic interface
• Higher accuracy
• Minimum transients
• Reduced power consumption
• Superior to DG211, DG212
• Space savings (TSSOP)
APPLICATIONS
• Industrial instrumentation
• Test equipment
• Communications systems
• Disk drives
• Computer peripherals
• Portable instruments
• Sample-and-hold circuits
DESCRIPTION
The DG211B, DG212B analog switches are highly improved
versions of the industry-standard DG211, DG212. These
devices are fabricated in Vishay Siliconix’ proprietary silicon
gate CMOS process, resulting in lower on-resistance, lower
leakage, higher speed, and lower power consumption.
These quad single-pole single-throw switches are designed
for a wide variety of applications in telecommunications,
instrumentation, process control, computer peripherals, etc.
An improved charge injection compensation design
minimizes switching transients. The DG211B and DG212B
can handle up to ± 22 V, and have an improved continuous
current rating of 30 mA. An epitaxial layer prevents latchup.
All devices feature true bi-directional performance in the on
condition, and will block signals to the supply levels in the off
condition.
The DG211B is a normally closed switch and the DG212B is
a normally open switch. (see Truth Table.)
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Logic “0” 0.8 V
Logic “1” 2.4 V
* Pb containing terminations are not RoHS compliant, exemptions may apply.
IN1IN2
D1D2
S1S2
V- V+
GND VL
S4S3
D4D3
IN4IN3
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Top View
DG211B
Dual-In-Line, SOIC and TSSOP
TRUTH TABLE
Logic DG211B DG212B
0 ON OFF
1OFFON
www.vishay.com
2
Document Number: 70040
S11-0179-Rev. J, 07-Feb-11
Vishay Siliconix
DG211B, DG212B
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6.5 mW/°C above 75 °C.
d. Derate 7.6 mW/°C above 75 °C.
SCHEMATIC DIAGRAM (Typical Channel)
ORDERING INFORMATION
Temp. Range Package Standard Part Number Lead (Pb)-free Part Number
- 40 °C to 85 °C
16-Pin Plastic DIP DG211BDJ DG211BDJ-E3
DG212BDJ DG212BDJ-E3
16-Pin Narrow SOIC
DG211BDY
DG211BDY-T1
DG211BDY-E3
DG211BDY-T1-E3
DG212BDY
DG212BDY-T1
DG212BDY-E3
DG212BDY-T1-E3
16-Pin TSSOP
DG211BDQ
DG211BDQ-T1
DG211BDQ-E3
DG211BDQ-T1-E3
DG212BDQ
DG212BDQ-T1
DG212BDQ-E3
DG212BDQ-T1-E3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Limit Unit
Voltages Referenced, V+ to V- 44
V
GND 25
Digital Inputsa, VS, VD
(V-) - 2 to (V+) + 2
or 30 mA, whichever occurs first
Current (Any terminal) 30 mA
Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max.) 100
Storage Temperature - 65 to 125 °C
Power Dissipation (Package)b 16-Pin Plastic DIPc470 mW
16-Pin Narrow SOIC and TSSOPd640
Figure 1.
DX
SX
V+
INX
V-
Level
Shift/
GND
V+
V-
Drive
VL
Document Number: 70040
S11-0179-Rev. J, 07-Feb-11
www.vishay.com
3
Vishay Siliconix
DG211B, DG212B
SPECIFICATIONS
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
VL = 5 V, VIN = 2.4 V, 0.8 VeTemp.a
D Suffix
- 40 °C to 85 °C
Unit Min.b Typ.cMax.b
Analog Switch
Analog Signal RangedVANALOG Full - 15 15 V
Drain-Source
On-Resistance RDS(on) VD = ± 10 V, IS = 1 mA
Room
Full 45 85
100
RDS(on) Match RDS(on) Room 2
Source Off Leakage Current IS(off) VS = ± 14 V, VD = ± 14 V Room
Full
- 0.5
- 5 ± 0.01 0.5
5
nADrain Off Leakage Current ID(off) VD = ± 14 V, VS = ± 14 V Room
Full
- 0.5
- 5 ± 0.01 0.5
5
Drain On Leakage Current ID(on) VS = VD = ± 14 V Room
Full
- 0.5
- 10 ± 0.02 0.5
10
Digital Control
Input Voltage High VINH Full 2.4 V
Input Voltage Low VINL Full 0.8
Input Current IINH or IINL VINH or VINL Full - 1 1 µA
Input Capacitance CIN Room 5 pF
Dynamic Characteristics
Tu r n - O n T ime t ON VS = 10 V
see figure 2
Room 300 ns
Turn-Off Time tOFF Room 200
Charge Injection Q CL = 1000 pF, Vgen = 0 V, Rgen = 0 Room 1 pC
Source-Off Capacitance CS(off) VS = 0 V, f = 1 MHz Room 5
pFDrain-Off Capacitance CD(off) Room 5
Channel-On Capacitance CD(on) VD = VS = 0 V, f = 1 MHz Room 16
Off Isolation OIRR CL = 15 pF, RL = 50 
VS = 1 VRMS, f = 100 kHz
Room 90 dB
Channel-to-Channel Crosstalk XTA L K Room 95
Power Supply
Positive Supply Current I+
VIN = 0 or 5 V
Room
Full
10
50
µANegative Supply Current I- Room
Full
- 10
- 50
Logic Supply Current IL
Room
Full
10
50
Power Supply Range for
Continuous Operation VOP Full ± 4.5 ± 22 V
www.vishay.com
4
Document Number: 70040
S11-0179-Rev. J, 07-Feb-11
Vishay Siliconix
DG211B, DG212B
Notes:
a. Room = 25 °C, Full = as determined by the operating temperature suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. Guaranteed by design, not subject to production test.
e. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolut e Maximum Ratings” may cause permanent damage to t he device. These are stress rating s only, and functional opera tion
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
SPECIFICATIONS (for Single Supply)
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
VL = 5 V, VIN = 2.4 V, 0.8 VeTemp.a
D Suffix
- 40 °C to 85 °C
Unit Min.b Typ.cMax.b
Analog Switch
Analog Signal RangedVANALOG Full 0 12 V
Drain-Source
On-Resistance RDS(on) VD = 3 V, 8 V, IS = 1 mA Room
Full 90 160
200
Dynamic Characteristics
Tur n -On T i m e tON VS = 8 V
see figure 1
Room 300 ns
Tur n -Of f T i m e tOFF Room 200
Charge Injection Q CL = 1 nF, Vgen = 6 V, Rgen = 0 Room 4 pC
Power Supply
Positive Supply Current I+
VIN = 0 or 5 V
Room
Full
10
50
µANegative Supply Current I- Room
Full
- 10
- 50
Logic Supply Current IL
Room
Full
10
50
Power Supply Range for
Continuous Operation VOP Full + 4.5 + 25 V
RDS(on) vs. VD and Power Supply Voltages
- 20 - 16 - 12 - 8 - 4 0 4 8 1 2 1 6 2 0
40
50
60
70
80
90
100
11 0
± 5 V
V
D
- Drain Voltage (V)
± 10 V
± 15 V
± 20 V
30
20
10
RDS(on) - Drain-Source On-Resistance (Ω)
RDS(on) vs. VD and Temperature
85 °C
0
10
20
30
40
50
- 15 - 10 - 5 0 5 10 15
V
D
- Drain V oltage (V)
125 °C
25 °C
- 55 °C
V+ = 15 V
V- = - 15 V
60
70
80
90
100
RDS(on) - Drain-Source On-Resistance (Ω)
Document Number: 70040
S11-0179-Rev. J, 07-Feb-11
www.vishay.com
5
Vishay Siliconix
DG211B, DG212B
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
RDS(on) vs. VD and Single Power Supply Voltages
Leakage Current vs. Temperature
02468 1 0 1 2 1 4 16
0
25
50
75
100
125
150
175
200
225
V
D
- Drain V oltage (V)
V+ = 5 V
7 V
10 V
12 V
15 V
250
RDS(on) - Drain-Source On-Resistance (Ω)
- 55 25 45 5 - 15 65
1 nA
100 pA
10 pA
- 35
1 pA
85 105 125
V+ = 15 V
V- = - 15 V
V
S,
V
D
= ± 14 V
I
S( of f)
, I
D(of f)
I
S, I
D- Current
Temperature (°C)
Leakage Currents vs. Analog Voltage
QS, QD - Charge Injection vs. Analog Voltage
- 20 - 15 - 10 - 5 0 5 10 15 20
40
20
0
- 20
- 40
IS, ID- Current (pA)
I
S( of f)
, I
D(of f)
I
D(on)
V
ANALO G
- Analog V oltage (V)
V+ = 22 V
V- = - 22 V
T
A
= 25 °C
30
10
- 10
- 30
- 15 - 10 - 5 0 5 10 15
30
20
10
0
- 10
- 20
- 30
V+ = 15 V
V- = - 15 V
V+ = 12 V
V- = 0 V
Q - Charge (pC)
VANALOG - Analog Voltage (V)
Off Isolation vs. Frequency
OIRR (dB)
10K 100K 1M 10M
40
50
60
70
80
90
100
11 0
120
f - Frequency (Hz)
V+ = + 15 V
V- = - 15 V
R
L
= 50 Ω
www.vishay.com
6
Document Number: 70040
S11-0179-Rev. J, 07-Feb-11
Vishay Siliconix
DG211B, DG212B
TEST CIRCUITS
Figure 2. Switching Time
50 %
0 V
3 V
tOFF
tON
VO
tr < 20 ns
tf < 20 ns
Logic
Input
Switch
Output
90 %
CL
35 pF
RL
1 kΩ
VO = VSRL + rDS(on)
RL
VS = + 2 V VO
V-
V+
IN
SD
3 V
- 15 V
GND
+ 15 V
Figure 3. Off Isolation
S
IN RL
D
Rg = 50 Ω
VSVO
0V, 2.4 V
Off Isolation = 20 log VS
VO
V+
- 15 V
GND V- C
C
+ 15 V
Figure 4. Channel-to-Channel Crosstalk
IN
1
V
O
+ 15 V
- 15 V
GND
R
L
V+
V-
NC
X
TALK Isolation = 20 log
C
V
S
C
V
O
0 V, 2.4 V
50 Ω
V
S S
1
IN
2
S
2
R
g
= 50 Ω
D
1
D
2
C = RF bypass
0 V, 2.4 V
Figure 5. Charge Injection
Document Number: 70040
S11-0179-Rev. J, 07-Feb-11
www.vishay.com
7
Vishay Siliconix
DG211B, DG212B
APPLICATIONS
Figure 6. Sample-and-Hold
LM101A
+ 15 V
- 15 V
30 pF
+ 15 V
- 15 V
V-
DG21 1B
50 pF
1000 pF
J202
J500
J507
+ 15 V
2N4400
- 15 V
V
IN
V
OUT
1 kΩ
200 W
5 MΩ
5.1 MΩ
Aquisition T ime = 25 µs
Aperature T ime = 1 µs
Sample to Hold Of fset = 5 mV
Droop Rate = 5 mV/s
Logic Input
Low = Sample
High = Hold
-
+
V
L V+
+ 5 V
Figure 7. Active Low Pass Filter with Digitally Selected Break Frequency
f
C1 f
C2
TTL
Control
150 pF
1500 pF
+ 15 V
DG21 1B GND
30 pF
LM101A
+ 15 V
- 15 V
Frequency - Hz
1 10 100 1K 10K 100K 1M
- 40
0
160
120
80
V oltage Gain - dB
f
C4
Select
f
C3
Select
f
C2
Select
f
C1
Select
R
1
= 10 kΩ
R
2
= 10 kΩ
R
3
= 1 MΩ
V
OUT
V
1
V-
C4
C3
C
2
C
1
f
C4
0.015 µF
0.15 µF
- 15 V
-
+
f
C3
40
AL (Voltage Gain Below Break Frequency) = = 100 (40 dB)
R3
R1
fC (Break Frequency) = 1
2πR
3
C
X
1
2πR1CX
fL (Unity Gain Frequency) =
Max. Attenuation =
RDS(on)
10 kΩ
≈
- 47 dB
f
L1 f
L2 f
L3 f
L4
www.vishay.com
8
Document Number: 70040
S11-0179-Rev. J, 07-Feb-11
Vishay Siliconix
DG211B, DG212B
APPLICATIONS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70040.
Figure 8. A Precision Amplifier with Digitally Programable Input and Gains
Gain =
Gain 1 (x1)
Gain 2 (x10)
Gain 3 (x100)
Gain 4 (x1000)
- 15 V
+ 15 V
- 15 V
GND
DG419
30 pF
+ 15 V
+ 15 V
- 15 V DG212B
Logic High = Switch On
+
-
LM101A
R
F
+ R
G
R
G
V
IN1
V
IN2
CH
R
F1
18 kΩ
R
F2
9.9 kΩ
R
F3
100 kΩ
R
G3
100 Ω
R
G2
100 Ω
R
G1
2 kΩ
V+
V-
GND V-
+ 5 V
V
L
All Leads
0.101 mm
0.004 IN
E
HC
D
e B A1 LĬ
4312 8756
131416 15 91012 11
Package Information
Vishay Siliconix
Document Number: 71194
02-Jul-01 www.vishay.com
1
SOIC (NARROW): 16ĆLEAD
JEDEC Part Number: MS-012
MILLIMETERS INCHES
Dim Min Max Min Max
A1.35 1.75 0.053 0.069
A10.10 0.20 0.004 0.008
B0.38 0.51 0.015 0.020
C0.18 0.23 0.007 0.009
D9.80 10.00 0.385 0.393
E3.80 4.00 0.149 0.157
e1.27 BS C 0.050 BSC
H5.80 6.20 0.228 0.244
L0.50 0.93 0.020 0.037
Ĭ0_8_0_8_
ECN: S-03946—Rev. F, 09-Jul-01
DWG: 5300
E1E
Q1
A
L
A1
e1B
B1
S
CeA
D
15°
MAX
12345678
16 15 14 13 12 11 10 9
Package Information
Vishay Siliconix
Document Number: 71261
06-Jul-01 www.vishay.com
1
PDIP: 16ĆLEAD
MILLIMETERS INCHES
Dim Min Max Min Max
A3.81 5.08 0.150 0.200
A10.38 1.27 0.015 0.050
B0.38 0.51 0.015 0.020
B10.89 1.65 0.035 0.065
C0.20 0.30 0.008 0.012
D18.93 21.33 0.745 0.840
E7.62 8.26 0.300 0.325
E15.59 7.11 0.220 0.280
e12.29 2.79 0.090 0.110
eA7.37 7.87 0.290 0.310
L2.79 3.81 0.110 0.150
Q11.27 2.03 0.050 0.080
S0.38 1.52 .015 0.060
ECN: S-03946—Rev. D, 09-Jul-01
DWG: 5482
Vishay Siliconix
Package Information
Document Number: 74417
23-Oct-06
www.vishay.com
1
Symbols
DIMENSIONS IN MILLIMETERS
Min Nom Max
A - 1.10 1.20
A1 0.05 0.10 0.15
A2 - 1.00 1.05
B 0.22 0.28 0.38
C - 0.127 -
D 4.90 5.00 5.10
E 6.10 6.40 6.70
E1 4.30 4.40 4.50
e-0.65-
L 0.50 0.60 0.70
L1 0.90 1.00 1.10
y--0.10
θ10°3°6°
ECN: S-61920-Rev. D, 23-Oct-06
DWG: 5624
TSSOP: 16-LEAD
Application Note 826
Vishay Siliconix
www.vishay.com Document Number: 72608
24 Revision: 21-Jan-08
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SO-16
RECOMMENDED MINIMUM PADS FOR SO-16
0.246
(6.248)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.152
(3.861)
0.047
(1.194)
0.028
(0.711)
0.050
(1.270)
0.022
(0.559)
0.372
(9.449)
Return to Index
Return to Index
Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1
Disclaimer
Legal Disclaimer Notice
Vishay
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.