Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
1
General Description
The AP2111 is CMOS process low dropout linear
regulator with enable function, the regulator delivers
a guaranteed 600mA (Min) continuous load current.
The AP2111 provides 1.2V, 1.5V, 1.8V, 2.5V, 3.3V,
4.8V regulated output and 0.8V to 5V adjustable
output, and provides excellent output accuracy 1.5%,
it is also provides a excellent load regulation, line
regulation and excellent load transient performance
due to very fast loop response. The AP2111 has
built-in auto discharge function.
The AP2111 features low power consumption.
The AP2111 is available in SOIC-8, PSOP-8
SOT-223 and SOT-23-5 packages.
Features
• Output Voltage Accuracy: ±1.5%
• Output Current: 600mA (Min)
• Foldback Short Current Protection: 50mA
• Enable Function to Turn On/Off VOUT
• Low Dropout Voltage (3.3V):
250mV (Typ) @ IOUT=600mA
• Excellent Load Regulation: 0.2%/A (Typ)
• Excellent Line Regulation: 0.02%/V (Typ)
• Low Quiescent Current: 55μA (Typ)
• Low Standby Current: 0.01μA (Typ)
• Low Output Noise: 50μVRMS
• PSRR: 65dB @ f=1kHz, 65dB @ f=100Hz
• OTSD Protection
• Stable with 1.0μF Flexible Cap: Ceramic,
Tantalum and Aluminum Electrolytic
• Operating Temperature Range: -40°C to 85°C
• ESD: MM 400V, HBM 4000V
Applications
• Laptop computer
• Potable DVD
• LCD Monitor
Figure 1. Package Types of AP2111
SOIC-8 PSOP-8
SOT-223 SOT-23-5
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
2
Pin Configuration
Figure 2. Pin Configuration of AP2111 (Top View)
Pin Descriptions
Pin Number Pin Name Function
SOIC-8/PSOP-8 SOT-223(H) SOT-223(HA) SOT-23-5
4 3 2 3 VIN Input voltage
2 2 3 4 VOUT Output voltage
8 1 EN
Chip enable, H – normal work, L –
shutdown output
1, 3, 5, 6, 7 1 1 2 GND Ground
5 ADJ/NC
Adjust output for ADJ version/No
connected for fixed version
M Package
(
SOIC-8
)
MP Package
(
PSOP-8
)
H/HA Package
(
SO
T
-223
)
K Package
(SOT-23-5)
VIN
ADJ/NC
EN
GND
VOUT
1
2
34
5
1
2
3
4
8
7
6
5
GND
VOUT
GND
VIN
EN
GND
GND
GND
1
2
3
4
8
7
6
5
GND
VOUT
GND
VIN
EN
GND
GND
GND
VIN
VOUT
GND
1
2
3VOUT
VIN
GND
1
2
3
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
3
Functional Block Diagram
Figure 3. Functional Block Diagram of AP2111 for Fixed Version
UVLO &
Shutdown Logic
Thermal
Shutdown
VREF
GND
EN
VOUT
VIN
3m
1
2
3
4
Foldback
Current Limit
ADJ/NC
5
Figure 4. Functional Block Diagram of AP2111 for Adjustable Version
A (B) {C}
A: SOIC-8/PSOP-8
B: SOT-223(H)
C: SOT-223(HA)
SOT-23-5
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
4
Ordering Information
AP2111 -
Package Temperature
Range Part Number Marking ID Packing
Type
SOIC-8 -40 to 85°C
AP2111M-1.2G1 2111M-1.2G1 Tube
AP2111M-1.2TRG1 2111M-1.2G1 Tape & Reel
AP2111M-1.5G1 2111M-1.5G1 Tube
AP2111M-1.5TRG1 2111M-1.5G1 Tape & Reel
AP2111M-1.8G1 2111M-1.8G1 Tube
AP2111M-1.8TRG1 2111M-1.8G1 Tape & Reel
AP2111M-2.5G1 2111M-2.5G1 Tube
AP2111M-2.5TRG1 2111M-2.5G1 Tape & Reel
AP2111M-3.3G1 2111M-3.3G1 Tube
AP2111M-3.3TRG1 2111M-3.3G1 Tape & Reel
PSOP-8 -40 to 85°C
AP2111MP-1.2G1 2111MP-1.2G1 Tube
AP2111MP-1.2TRG1 2111MP-1.2G1 Tape & Reel
AP2111MP-1.5G1 2111MP-1.5G1 Tube
AP2111MP-1.5TRG1 2111MP-1.5G1 Tape & Reel
AP2111MP-1.8G1 2111MP-1.8G1 Tube
AP2111MP-1.8TRG1 2111MP-1.8G1 Tape & Reel
AP2111MP-2.5G1 2111MP-2.5G1 Tube
AP2111MP-2.5TRG1 2111MP-2.5G1 Tape & Reel
AP2111MP-3.3G1 2111MP-3.3G1 Tube
AP2111MP-3.3TRG1 2111MP-3.3G1 Tape & Reel
SOT-223(H) -40 to 85°C
AP2111H-1.2TRG1 GH11B Tape & Reel
AP2111H-1.5TRG1 GH13G Tape & Reel
AP2111H-1.8TRG1 GH11G Tape & Reel
AP2111H-2.5TRG1 GH11H Tape & Reel
AP2111H-3.3TRG1 GH11C Tape & Reel
AP2111H-4.8TRG1 GH13D Tape & Reel
Package
M: SOIC-8
MP: PSOP-8
H/HA: SOT-223
K: SOT-23-5
1.2: Fixed Output 1.2V
1.5: Fixed Output 1.5V
1.8: Fixed Output 1.8V
2.5: Fixed Output 2.5V
3.3: Fixed Output 3.3V
4.8: Fixed Output 4.8V
ADJ: Adjustable Output
Circuit Type
G1: Green
Blank: Tube
TR: Ta
p
e & Reel
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
5
Ordering Information (Continued)
Package Temperature
Range Part Number Marking ID Packing
Type
SOT-223(HA) -40 to 85°C
AP2111HA-1.2TRG1 GH11J Tape & Reel
AP2111HA-1.5TRG1 GH14G Tape & Reel
AP2111HA-1.8TRG1 GH11K Tape & Reel
AP2111HA-2.5TRG1 GH11L Tape & Reel
AP2111HA-3.3TRG1 GH11M Tape & Reel
AP2111HA-4.8TRG1 GH11N Tape & Reel
SOT-23-5 -40 to 85°C
AP2111K-1.5TRG1 G3S Tape & Reel
AP2111K-ADJG1 G3Q Tube
AP2111K-ADJTRG1 G3Q Tape & Reel
BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant
and Green.
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
6
Absolute Maximum Ratings (Note 1)
Parameter Symbol Value Unit
Power Supply Voltage VIN 6.5 V
Operating Junction Temperature
Range TJ 150 ºC
Storage Temperature Range TSTG -65 to 150 ºC
Lead Temperature (Soldering, 10sec) TLEAD 260 ºC
Thermal Resistance (No Heatsink) θJA
SOIC-8 144
ºC/W
PSOP-8 143
SOT-223 128
SOT-23-5 250
ESD (Machine Model) 400 V
ESD (Human Body Model) 4000 V
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter Symbol Min Typ Max Unit
Supply Voltage VIN 2.5 6.0 V
Operating Ambient Temperature
Range TA -40 85 °C
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
7
Electrical Characteristics
AP2111-1.2 Electrical Characteristic (Note 2)
VIN=2.5V, CIN=1.0μF (Ceramic), COUT=1.0μF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤TA≤85°C
ranges, unless otherwise specified (Note 3).
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage VOUT V
IN =2.5V, 1mA ≤ IOUT ≤ 30mA VOUT
×98.5% 1.2 VOUT
×101.5% V
Maximum Output
Current IOUT(Max) V
IN=2.5V, VOUT=1.182V to 1.218V 600 mA
Load Regulation (V△OUT/VOUT)
△IOUT VIN=2.5V, 1mA ≤ IOUT ≤600mA 0.2 %/A
Line Regulation (V△OUT/VOUT)
△VIN 2.5V≤VIN≤6V, IOUT=30mA 0.02
%/V
Dropout Voltage VDROP
IOUT =10mA 1000 1300
mV IOUT =300mA 1000 1300
IOUT=600mA 1000 1300
Quiescent Current IQ V
IN=2.5V, IOUT=0mA 55 80
μA
Standby Current ISTD V
IN=2.5V, VEN in OFF mode 0.01 1.0 μA
Power Supply
Rejection Ratio PSRR
Ripple 0.5Vp-p
VIN=2.5V,
IOUT=100mA
f=100Hz 65
dB
f=1kHz 65
Output Voltage
Temperature Coefficient
(V△OUT/VOUT)
T△
IOUT=30mA
TA=-40°C to 85°C ±100 ppm/°C
Short Current Limit ISHORT V
OUT=0V 50 mA
RMS Output Noise VNOISE
N
o Load, 10Hz ≤ f ≤100kHz 50
μVRMS
VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0
V
VEN Low Voltage VIL Enable logic low, regulator off 0 0.4
Start-up Time tS
N
o Loa
d
20
μs
EN Pull Down Resistor RPD 3.0 mΩ
VOUT Discharge
Resistor RDCHG Set EN pin at Low 60 Ω
Thermal Shutdown
Temperature TOTSD 160
°C
Thermal Shutdown
Hysteresis THYOTSD 30
Thermal Resistance
(Junction to Case) θJC
SOIC-8 74.6
°C /W
PSOP-8 43.7
SOT-223 50.9
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
8
Electrical Characteristics (Continued)
AP2111-1.5 Electrical Characteristic (Note 2)
VIN=2.5V, CIN=1.0μF (Ceramic), COUT=1.0μF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤TA≤85°C
ranges, unless otherwise specified (Note 3).
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage VOUT V
IN =2.5V, 1mA ≤ IOUT ≤ 30mA VOUT
×98.5% 1.5 VOUT
×101.5% V
Maximum Output
Current IOUT(Max) V
IN=2.5V, VOUT=1.478V to 1.523V 600 mA
Load Regulation (V△OUT/VOUT)
△IOUT VIN=2.5V, 1mA ≤ IOUT ≤600mA 0.2 %/A
Line Regulation (V△OUT/VOUT)
△VIN 2.5V≤VIN≤6V, IOUT=30mA 0.02
%/V
Dropout Voltage VDROP
IOUT =10mA 700 1000
mV IOUT =300mA 700 1000
IOUT=600mA 700 1000
Quiescent Current IQ V
IN=2.5V, IOUT=0mA 55 80
μA
Standby Current ISTD V
IN=2.5V, VEN in OFF mode 0.01 1.0 μA
Power Supply
Rejection Ratio PSRR
Ripple 0.5Vp-p
VIN=2.5V,
IOUT=100mA
f=100Hz 65
dB
f=1kHz 65
Output Voltage
Temperature Coefficient
(V△OUT/VOUT)
T△
IOUT=30mA
TA=-40°C to 85°C ±100 ppm/°C
Short Current Limit ISHORT V
OUT=0V 50 mA
RMS Output Noise VNOISE
N
o Load, 10Hz ≤ f ≤100kHz 50
μVRMS
VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0
V
VEN Low Voltage VIL Enable logic low, regulator off 0 0.4
Start-up Time tS
N
o Loa
d
20
μs
EN Pull Down Resistor RPD 3.0 mΩ
VOUT Discharge
Resistor RDCHG Set EN pin at Low 60 Ω
Thermal Shutdown
Temperature TOTSD 160
°C
Thermal Shutdown
Hysteresis THYOTSD 30
Thermal Resistance
(Junction to Case) θJC
SOIC-8 74.6
°C /W
PSOP-8 43.7
SOT-223 50.9
SOT-23-5 150
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
9
Electrical Characteristics (Continued)
AP2111-1.8 Electrical Characteristic (Note 2)
VIN=2.8V, CIN=1μF (Ceramic), COUT=1μF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤TA≤85°C ranges,
unless otherwise specified (Note 3).
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage VOUT V
IN =2.8V, 1mA ≤ IOUT ≤ 30mA VOUT
×98.5% 1.8 VOUT
×101.5% V
Maximum Output Current IOUT(Max) VIN=2.8V,
VOUT=1.773V to 1.827V 600 mA
Load Regulation (V△OUT/VOUT)
△IOUT
VOUT=1.8V, VIN=VOUT+1V,
1mA ≤ IOUT ≤600mA 0.2 %/A
Line Regulation
(V△OUT/VOUT)
△VIN 2.8V≤VIN≤6V, IOUT=30mA 0.02 %/V
Dropout Voltage VDROP
IOUT =10mA 500 700
mV IOUT =300mA 500 700
IOUT=600mA 500 700
Quiescent Current IQ V
IN=2.8V, IOUT=0mA 55 80
μA
Standby Current ISTD V
IN=2.8V, VEN in OFF mode 0.01 1.0 μA
Power Supply Rejectio
Ratio PSRR
Ripple 0.5Vp-p
VIN=2.8V,
IOUT=100mA
f=100Hz 65
dB
f=1kHz 65
Output Voltage
Temperature Coefficient
(V△OUT/VOUT)
T△
IOUT=30mA
TA=-40°C to 85°C ±100 ppm/°C
Short Current Limit ISHORT V
OUT=0V 50 mA
RMS Output Noise VNOISE
N
o Load, 10Hz ≤ f ≤100kHz 50
μVRMS
VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0
V
VEN Low Voltage VIL Enable logic low, regulator off 0 0.4
Start-up Time tS
N
o Loa
d
20
μs
EN Pull Down Resistor RPD 3.0 mΩ
VOUT Discharge Resistor RDCHG Set EN pin at Low 60 Ω
Thermal Shutdown
Temperature TOTSD 160
°C
Thermal Shutdown
Hysteresis THYOTSD 30
Thermal Resistance
(Junction to Case) 　θJC
SOIC-8 74.6
°C /W
PSOP-8 43.7
SOT-223 50.9
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
10
Electrical Characteristics (Continued)
AP2111-2.5 Electrical Characteristic (Note 2)
VIN=3.5V, CIN=1μF (Ceramic), COUT=1μF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤TA≤85°C ranges,
unless otherwise specified (Note 3).
Note 2: To prevent the short circuit current protection feature from being prematurely activated, the input voltage
must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage VOUT V
IN =3.5V, 1mA ≤ IOUT ≤ 30mA VOUT
×98.5% 2.5 VOUT
×101.5% V
Maximum Output Current IOUT(Max) VIN=3.5V, VOUT=2.463V to
2.537V 600 mA
Load Regulation (V△OUT/VOUT)
△IOUT
VOUT=2.5V, VIN=VOUT+1V,
1mA ≤ IOUT ≤600mA 0.2 %/A
Line Regulation (V△OUT/VOUT)
△VIN 3.5V≤VIN≤6V, IOUT=30mA 0.02 %/V
Dropout Voltage VDROP
IOUT =10mA 5 8
mV IOUT =300mA 125 200
IOUT=600mA 250 400
Quiescent Current IQ V
IN=3.5V, IOUT=0mA 55 80
μA
Standby Current ISTD V
IN=3.5V, VEN in OFF mode 0.01 1.0 μA
Power Supply Rejectio
Ratio PSRR
Ripple 0.5Vp-p
VIN=3.5V,
IOUT=100mA
f=100Hz 65
dB
f=1kHz 65
Output Voltage
Temperature Coefficient
(V△OUT/VOUT)
T△
IOUT=30mA
TA=-40°C to 85°C ±100 ppm/°C
Short Current Limit ISHORT V
OUT=0V 50 mA
RMS Output Noise VNOISE
N
o Load, 10Hz ≤ f ≤100kHz 50
μVRMS
VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0
V
VEN Low Voltage VIL Enable logic low, regulator off 0 0.4
Start-up Time tS
N
o Loa
d
20
μs
EN Pull Down Resistor RPD 3.0 mΩ
VOUT Discharge Resistor RDCHG Set EN pin at Low 60 Ω
Thermal Shutdown
Temperature TOTSD 160
°C
Thermal Shutdown
Hysteresis THYOTSD 30
Thermal Resistance
(Junction to Case) 　θJC
SOIC-8 74.6
°C /WPSOP-8 43.7
SOT-223 50.9
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
11
Electrical Characteristics (Continued)
AP2111-3.3 Electrical Characteristic (Note 2)
VIN=4.3V, CIN=1μF (Ceramic), COUT=1μF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤TA≤85°C ranges,
unless otherwise specified (Note 3).
Note 2: To prevent the short circuit current protection feature from being prematurely activated, the input voltage
must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage VOUT V
IN =4.3V, 1mA ≤ IOUT ≤ 30mA VOUT
×98.5% 3.3 VOUT
×101.5% V
Maximum Output Current IOUT(Max) VIN=4.3V, VOUT=3.251V to
3.350V 600 mA
Load Regulation (V△OUT/VOUT)
△IOUT VIN=4.3V, 1mA ≤ IOUT ≤600mA 0.2 %/A
Line Regulation (V△OUT/VOUT)
△VIN 4.3V≤VIN≤6V, IOUT=30mA 0.02 %/V
Dropout Voltage VDROP
IOUT =10mA 5 8
mV IOUT =300mA 125 200
IOUT=600mA 250 400
Quiescent Current IQ V
IN=4.3V, IOUT=0mA 55 80
μA
Standby Current ISTD V
IN=4.3V, VEN in OFF mode 0.01 1.0 μA
Power Supply Rejectio
Ratio PSRR
Ripple 0.5Vp-p
VIN=4.3V,
IOUT=100mA
f=100Hz 65
dB
f=1kHz 65
Output Voltage
Temperature Coefficient
(V△OUT/VOUT)
T△
IOUT=30mA
TA=-40°C to 85°C ±100 ppm/°C
Short Current Limit ISHORT V
OUT=0V 50 mA
RMS Output Noise VNOISE
N
o Load, 10Hz ≤ f ≤100kHz 50
μVRMS
VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0
V
VEN Low Voltage VIL Enable logic low, regulator off 0 0.4
Start-up Time tS
N
o Loa
d
20
μs
EN Pull Down Resistor RPD 3.0 mΩ
VOUT Discharge Resistor RDCHG Set EN pin at Low 60 Ω
Thermal Shutdown
Temperature TOTSD 160
°C
Thermal Shutdown
Hysteresis THYOTSD 30
Thermal Resistance
(Junction to Case) 　θJC
SOIC-8 74.6
°C /W
PSOP-8 43.7
SOT-223 50.9
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
12
Electrical Characteristics (Continued)
AP2111-4.8 Electrical Characteristic (Note 2) (Only for SOT-223)
VIN=5.5V, CIN=1μF (Ceramic), COUT=1μF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤TA≤85°C ranges,
unless otherwise specified (Note 3).
Note 2: To prevent the short circuit current protection feature from being prematurely activated, the input voltage
must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage VOUT V
IN =5.5V, 1mA ≤ IOUT ≤ 30mA VOUT
×98.5% 4.8 VOUT
×101.5% V
Maximum Output Current IOUT(Max) VIN=5.5V, VOUT=4.751V to
4.850V 600 mA
Load Regulation (V△OUT/VOUT)
△IOUT VIN=5.5V, 1mA ≤ IOUT ≤600mA 0.2 %/A
Line Regulation (V△OUT/VOUT)
△VIN 5.5V≤VIN≤6V, IOUT=30mA 0.02 %/V
Dropout Voltage VDROP
IOUT =10mA 5 8
mV IOUT =300mA 100 200
IOUT=600mA 200 400
Quiescent Current IQ V
IN=5.5V, IOUT=0mA 55 80
μA
Standby Current ISTD V
IN=5.5V, VEN in OFF mode 0.01 1.0 μA
Power Supply Rejectio
Ratio PSRR
Ripple 0.5Vp-p
VIN=5.5V,
IOUT=100mA
f=100Hz 65
dB
f=1kHz 65
Output Voltage
Temperature Coefficient
(V△OUT/VOUT)
T△
IOUT=30mA
TA=-40°C to 85°C ±100 ppm/°C
Short Current Limit ISHORT V
OUT=0V 50 mA
RMS Output Noise VNOISE
N
o Load, 10Hz ≤ f ≤100kHz 50
μVRMS
Thermal Shutdown
Temperature TOTSD 160
°C
Thermal Shutdown
Hysteresis THYOTSD 30
Thermal Resistance
(Junction to Case) 　θJC SOT-223 50.9
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
13
Electrical Characteristics (Continued)
AP2111-ADJ Electrical Characteristic (Note 2) (Only for SOT-23-5)
VIN=2.5V, CIN=1.0μF (Ceramic), COUT=1.0μF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤TA≤85°C
ranges, unless otherwise specified (Note 3).
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Parameter Symbol Conditions Min Typ Max Unit
Reference Voltage VREF V
IN =2.5V, 1mA ≤ IOUT ≤ 30mA VREF
×98.5% 0.8 VREF
×101.5% V
Maximum Output
Current IOUT(Max) V
IN=2.5V, VREF=0.788V to 0.812V 600 mA
Load Regulation (V△OUT/VOUT)
△IOUT VIN=2.5V, 1mA ≤ IOUT ≤600mA 0.2 %/A
Line Regulation (V△OUT/VOUT)
△VIN 2.5V≤VIN≤6V, IOUT=30mA 0.02
%/V
Quiescent Current IQ V
IN=2.5V, IOUT=0mA 55 80
μA
Standby Current ISTD V
IN=2.5V, VEN in OFF mode 0.01 1.0 μA
Power Supply
Rejection Ratio PSRR
Ripple 0.5Vp-p
VIN=2.5V,
IOUT=100mA
f=100Hz 65
dB
f=1kHz 65
Output Voltage
Temperature Coefficient
(V△OUT/VOUT)
T△
IOUT=30mA
TA=-40°C to 85°C ±100 ppm/°C
Short Current Limit ISHORT V
OUT=0V 50 mA
RMS Output Noise VNOISE
N
o Load, 10Hz ≤ f ≤100kHz 50
μVRMS
VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0
V
VEN Low Voltage VIL Enable logic low, regulator off 0 0.4
Start-up Time tS
N
o Loa
d
20
μs
EN Pull Down Resistor RPD 3.0 mΩ
VOUT Discharge
Resistor RDCHG Set EN pin at Low 60 Ω
Thermal Shutdown
Temperature TOTSD 160
°C
Thermal Shutdown
Hysteresis THYOTSD 30
Thermal Resistance
(Junction to Case) θJC SOT-23-5 150 °C /W
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
14
Typical Performance Characteristics
Figure 5. Output Voltage vs. Input Voltage Figure 6. Output Voltage vs. Input Voltage
Figure 7. Output Voltage vs. Input Voltage Figure 8. Quiescent Current vs. Temperature
0.00.51.01.52.02.53.03.54.04.55.05.56.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
No Load
TA=-40oC
TA=25oC
TA=85oC
VOUT=1.2V
Output Voltage (V)
Input Voltage (V)
0.00.51.01.52.02.53.03.54.04.55.05.56.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Output Voltage (V )
Input Voltage (V)
TA=-40oC
TA=25oC
TA=85oC
VOUT=3.3V
No Load
-40-200 20406080
46
48
50
52
54
56
58
60
62
64
66
68
70
VIN=2.5V
No Load
Quiescent Current (μA)
Temperature (oC)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VOUT=4.8V
TA=25OC
Output Voltage (V)
Input Voltage (V)
IOUT=0mA
IOUT=100mA
IOUT=300mA
IOUT=600mA
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
15
Typical Performance Characteristics (Continued)
1.01.52.02.53.03.54.04.55.05.56.0
0
10
20
30
40
50
60
70
Quiescent Current (μA)
TA=-40oC
TA=25oC
TA=85oC
No Load
Input Voltage (V)
-40-200 20406080
3.25
3.26
3.27
3.28
3.29
3.30
3.31
3.32
3.33
3.34
3.35
Output Voltage (V)
Temperature (oC)
IOUT=10mA
IOUT=100mA
IOUT=300mA
IOUT=600mA
VIN=4.3V
CIN=1μF
COUT=1μF
-40 -20 0 20 40 60 80
1.200
1.202
1.204
1.206
1.208
1.210
IOUT=300mA
IOUT=600mA
IOUT=10mA
IOUT=100mA
VIN=2.5V
CIN=1μF
COUT=1μF
Output Voltage (V)
Temperature (oC)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
-0.1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
VIN=2.5V
Output Voltage (V)
Output Current (A)
TA= -40oC
TA=25oC
TA=85oC
Figure 11. Output Voltage vs. Temperature Figure 12. Output Voltage vs. Output Current
Figure 9. Quiescent Current vs. Input Voltage Figure 10. Output Voltage vs. Temperature
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
16
Typical Performance Characteristics (Continued)
0.00.10.20.30.40.50.60.70.80.91.0
-0.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Output Voltage (V)
Output Current (A)
TA=-40oC
TA= 25oC
TA= 85oC
VIN=4.3V
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Output Voltage (V)
Output Current (A)
VIN=4.0V
VIN=4.3V
VIN=5.0V
VIN=5.5V
VIN=6.0V
TA=25oC
CIN=1μF
COUT=1μF
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
TA=25oC
CIN=1μF
COUT=1μF
VIN=5.0V
VIN=2.0V
VIN=5.5V
VIN=6.0V
VIN=2.5V
Output Volt age (V)
Output Current (A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VOUT=4.8V
Output Voltage (V)
Output Current (A)
VIN=5.0V
VIN=5.3V
VIN=5.5V
VIN=6.0V
Figure 15. Output Voltage vs. Output Current Figure 16. Output Voltage vs. Output Current
Figure 13. Output Voltage vs. Output Current Figure 14. Output Voltage vs. Output Current
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
17
Typical Performance Characteristics (Continued)
0.0 0.1 0.2 0.3 0.4 0.5 0.6
0
50
100
150
200
250
300
350
Dropout Voltage (mV)
Output Current (A)
VOUT=3.3V
TA=-40oC
TA= 25oC
TA= 85oC
0.0 0.1 0.2 0.3 0.4 0.5 0.6
40
60
80
100
120
140
160
180
200
220
240
260
Ground Current (μA)
Output Cur ren t (A)
VIN=4.3V
TA=-40oC
TA= 25oC
TA= 85oC
100 1k 10k 100k
30
35
40
45
50
55
60
65
70
VOUT=1.2V
IOUT=10mA
IOUT=100mA
IOUT=300mA
PSRR (dB)
Frequency (Hz)
20
VIN=2.5V
Ripple=0.5V
0.0 0.1 0.2 0.3 0.4 0.5 0.6
0
50
100
150
200
250
300
350
Dropout Voltage (V)
Output Current (A)
TA=-40OC
TA=25OC
TA=85OC
VOUT=4.8V
Figure 17. Dropout Voltage vs. Output Current Figure 18. Dropout Voltage vs. Output Current
Figure 19. Ground Current vs. Output Current Figure 20. PSRR vs. Frequency
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
18
Typical Performance Characteristics (Continued)
Figure 21. Load Transient Figure 22. Enable On
Figure 23. Enable Off
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
19
Typical Application (Note 4)
Note 4: It is recommended to use X7R or X5R dielectric capacitor if 1.0μF ceramic capacitor is selected as
input/output capacitors.
Figure 24. Ty pical Application of AP211 1
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
20
Mechanical Dimensions
SOIC-8 Unit: mm(inch)
0°
8°
1°
5°
R0.150(0.006)
R0.150(0.006)
1.000(0.039)
0.330(0.013)
0.510(0.020)
1.350(0.053)
1.750(0.069)
0.100(0.004)
0.300(0.012)
0.900(0.035)
0.800(0.031)
0.200(0.008)
3.800(0.150)
4.000(0.157)
7°
7°
20:1
D
1.270(0.050)
TYP
0.190(0.007)
0.250(0.010)
8°
D
5.800(0.228)
6.200(0.244)
0.675(0.027)
0.725(0.029)
0.320(0.013)
8°
0.450(0.017)
0.800(0.031)
4.700(0.185)
5.100(0.201)
Note: Eject hole, oriented hole and mold mark is optional.
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
21
Mechanical Dimensions (Continued)
PSOP-8 Unit: mm(inch)
3.202(0.126)
3.402(0.134)
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
22
Mechanical Dimensions (Continued)
SOT-223 Unit: mm(inch)
3.300(0.130)
3.700(0.146)
6.700(0.264)
7.300(0.287)
Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2111
Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
23
Mechanical Dimensions (Continued)
SOT-23-5 Unit: mm(inch)
2.820(0.111)
0.000(0.000)
0.300(0.012)
0.950(0.037)
0.900(0.035)
0.100(0.004)
0.200(0.008)
8°
0°
3.020(0.119)
0.400(0.016)
0.150(0.006)
1.300(0.051)
0.200(0.008)
1.800(0.071)
2.000(0.079)
0.700(0.028)
REF
TYP
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BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility fo r use of any its products for any
particular purpose, nor does BCD Semiconductor Man ufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
- Wafer Fab
Shanghai SIM-BCD Semiconductor Manufacturing Limited
800, Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
BCD Semiconductor Manufacturing Limited
MAIN SITE
REGIONAL SALES OFFICE
Shenzhen Office
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office
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BCD Semiconductor (Taiwan) Company Limited
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BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
BCD Semiconductor Manufacturing Limited
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
- Wafer Fab
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.
800 Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
MAIN SITE
REGIONAL SALES OFFICE
Shenzhen Office
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office
Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,
China
Tel: +86-755-8826 7951
Fax: +86-755-8826 7865
Taiwan Office
BCD Semiconductor (Taiwan) Company Limited
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Taiwan
Tel: +886-2-2656 2808
Fax: +886-2-2656 2806
USA Office
BCD Semiconductor Corp.
30920 Huntwood Ave. Hayward,
CA 94544, USA
Tel : +1-510-324-2988
Fax: +1-510-324-2788
- Headquarters
BCD Semiconductor Manufacturing Limited
No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China
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