SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LOW VOLTAGE HIGH SPEED SWITCHING. Low Forward Voltage : Vpr=0.54V(Typ.) . Low Reverse Current : [rR=5uA(Max.) Small Package : SC-70 1$$322 Unit in mm 2.00.2 0.65 0.65 21+0.1 125401 w me MAXIMUM RATINGS (Ta=25C) Sa rad q CHARACTERISTIC SYMBOL RATING UNIT S| 5 | < Maximum(Peak) Reverse Voltage VRM 45 Vv Reverse Voltage VR 40 Vv i . id Maximum(Peak) Forward Current IFM 300 mA Pats L ANODE Average Forward Current Io 100 mA 2, N.C 20 3. CATHODE Power Dissipation P 100 mz JEDEC _ Junction Temperature Tj 125 c ELAJ SC_70 Storage Temperature Range Tstg -55~125 TOSHIBA 1-2P1B Weight 0.0062 ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.| TYP.| MAX.] UNIT VF(1) Ip=imA - 0.28 - Forward Voltage VF(2) Ip=10mA - 0.36 - Vv VF(3) Tp=100mA - 0.54 |0.60 Reverse Current Ir VR=40V - - 5 HA Total Capacitance CT Vp=0, f=1MHz - 18 25 pF Marking A AQ g B 1181 1$$322 Ip VF In Vr 300m 1004 30 4 100m 104 34 ~ 30 = Ss la be oJ 10m ~ 300n z, 7 oe & 100n og & fe 3 > G 3 5 m 30n q ie] od mo) $ a = a 10n a a m lm oat 3n In 0.3m 0.30 O41 O.1n 0 0.2 0.4 0.6 0.8 1.0 1.2 16 9 10 20 30 40 50 FORWARD VOLTAGE Vp (Vv) REVERSE VOLTAGE Ver Cv) Cy VR 100 wow Oo oO = o TOTAL CAPACITANCE Cy (pF) 0 4 8 12 16 20 24 28 32 36 REVERSE VOLTAGE Vp (CV) 1182