SHINDENGEN General Purpose Rectifiers S1NBB80 SMT Bridges OUTLINE DIMENSIONS Case : 1NA Unit : mm 800V 1A RATINGS Absolute Maximum Ratings (If not specified Ta=25) Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature VRM Maximum Reverse Voltage IO Average Rectified Forward Current 50Hz sine wave, R-load, Glass-epoxy substrate, Ta=26 *1 IO 50Hz sine wave, R-load, Glass-epoxy substrate, Ta=25 *2 IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25 Peak Surge Forward Current I2t Current Squared Time 1mst10ms@Tj=25 Ratings -40 to 150 150 800 1 0.84 50 6 Unit V A A A A2s Electrical Characteristics (If not specified Ta=25) Item Symbol Conditions VF Forward Voltage IF=0.5A, Pulse measurement, Rating of per diode IR Reverse Current VR=VRM, Pulse measurement, Rating of per diode AEjl junction to lead AEja junction to ambient *1 Thermal Resistance AEja junction to ambient *2 Ratings Max 1.05 Max 10 Max 15 Max 68 Max 84 Unit V EA *1 : Glass epoxy substrate (pattern area : 324mm2) *2 : Glass epoxy substrate (pattern area : 101mm2) Copyright & Copy;2002 Shindengen Electric Mfg. Co., Ltd. /W S1NBB80 Forward Voltage Pulse measurement per diode 10 Forward Current IF [A] 5 2 Ta=150C[TYP] Ta= 25C[TYP] 1 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 Forward Voltage 1 1.2 VF [V] 1.4 1.6 S1NBB80 Forward Power Dissipation 2 PF [W] Forward Power Dissipation SIN 1.5 1 0.5 0 0 0.2 0.4 0.6 0.8 1 IO [A] Average Rectified Forward Current Tj = 150C 1.2 S1NBB80 Derating Curve IO [A] Average Rectified Forward Current 1.2 Glass-epoxy substrate Soldering land 9mm x 9mm Conductor layer 35 m SIN 1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ta [C] Ambient Temperature VR = VRM 140 160 S1NBB80 Peak Surge Forward Capability I FSM 60 10ms 10ms 1 cycle 50 I FSM [A] non-repetitive, sine wave, Tj=25C before surge current is applied Peak Surge Forward Current 40 30 20 10 0 1 2 5 10 20 Number of Cycles [cycle] 50 100