NPT2019 - M/A-COM Technology Solutions

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NPT2019 Preliminary

Preliminary Datasheet NDS-043 Rev. 2, 012414

Gallium Nitride 48V, 25W, DC-6 GHz HEMT

Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology

DC-6 GHz

25W

GaN HEMT

Symbol Parameter Min Typ Max Units

GSS Small-signal Gain - 16.2 - dB

PSAT Saturated Output Power - 44.8 - dBm

SAT Efficiency at Saturated Output Power - 60 - %

GP Gain at POUT = 25W* - 16 - dB

 Drain Efficiency at POUT = 25W* - 55 - %

VDS Drain Voltage - 48 - V

 Ruggedness: Output Mismatch, all phase angles VSWR = TBD:1, No Device Damage

RF Specifications (Pulsed*, 2.5 GHz): VDS = 48V, IDQ = 150mA, TC= 25°C

Product Description

The NPT2019 GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. This

device has been designed for CW, pulsed, and linear operation with pulsed output power levels

to 25W (44 dBm) in an industry standard surface mount plastic package.

Features

 Suitable for linear and pulsed applications

 Tunable from DC-6 GHz

 48V Operation

 Industry Standard Plastic Package

 High Drain Efficiency (>60%)

Applications

 Defense Communications

 Land Mobile Radio

 Avionics

 Wireless Infrastructure

 ISM Applications

 VHF/UHF/L/S-Band Radar

* Pulse Conditions: 100µS pulse width, 10% duty cycle

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NPT2019 Preliminary

Preliminary Datasheet NDS-043 Rev. 2, 012414

Symbol Parameter Min Typ Max Units

Off Characteristics

IDLK Drain-Source Leakage Current

(VGS=-8V, VDS=160V) - - 6 mA

IGLK Gate-Source Leakage Current

(VGS=-8V, VDS=0V) - - 3 mA

On Characteristics

VT Gate Threshold Voltage

(VDS=48V, ID=6mA) -2.5 -1.5 -0.5 V

VGSQ Gate Quiescent Voltage

(VDS=48V, ID=150mA) -2.1 -1.2 -0.3 V

RON On Resistance

(VDS=2V, ID=45mA)

- 0.75 - 

ID, MAX Maximum Drain Current

(VDS=7V pulsed, 300µS pulse width,

0.2% Duty Cycle)

- 3.5 - A

DC Specifications: TC = 25°C

Thermal Resistance Specification:

Symbol Parameter Typ Units

RJC Thermal Resistance (Junction-to-Case),

TJ = 200 °C

3.8

°C/W

Absolute Maximum Ratings: Not simultaneous, TC = 25°C unless otherwise noted

Symbol Parameter Max Units

VDS Drain-Source Voltage 160 V

VGS Gate-Source Voltage -10 to 3 V

IG Gate Current 12 mA

PT Total Device Power Dissipation (Derated above 25°C) 46 W

TSTG Storage Temperature Range -65 to 150 °C

TJ Operating Junction Temperature 200 °C

HBM Human Body Model ESD Rating (per JESD22-A114) Class 1B

MSL Moisture sensitivity level (per IPC/JEDEC J-STD-020) TBD

Junction Temperature (TJ) measured using IR Microscopy, Case Temperature (TC) measured using a thermocouple embedded in

heatsink.

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NPT2019 Preliminary

Preliminary Datasheet NDS-043 Rev. 2, 012414

Frequency

(MHz)

ZS () ZL () PSAT (W) GSS (dB) Drain Efficiency

@ PSAT (%)

900 4.0 + j4.5 9.8 + j17.3 36 26.0 63

2500 2.7 - j3.9 5.7 + j9.0 35 17.0 58

4000 2.5 - j10.9 4.9 + j4.0 34 13.5 55

5800 3.1 - j13.5 2.8 - j2.8 30 12.5 52

Optimum Source and Load Impedances:

(Pulsed CW* Drain Efficiency and Output Power Tradeoff Impedance)

Figure 1: CW Power/Drain Efficiency

Tradeoff Impedances, ZO=20

Load-Pull Data, Reference Plane at Device Leads

VDS=48V, IDQ=150mA, TC=25C unless otherwise noted

Figure 2: Gain vs. POUT Figure 3: Efficiency vs. POUT

* Pulse Conditions: 100µS pulse width, 10% duty cycle

25 30 35 40 45 50

900MHz

2500MHz

4000MHz

5800MHz

Drain Efficiency (%)

POUT (dBm)

25 30 35 40 45 50

900MHz

2500MHz

4000MHz

5800MHz

Gain (dB)

POUT (dBm)

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NPT2019 Preliminary

Preliminary Datasheet NDS-043 Rev. 2, 012414

Figure 1 - DFN3X6-14 Plastic Package Dimensions (all dimensions in inches [millimeters])

Function Pin

Gate — RF Input 10, 11, 12

Drain — RF Output 2-6

Source — Ground Exposed Pad

1, 7, 8, 9, 13, 14 No Connect*

* All No Connect pins may be left floating or grounded

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NPT2019 Preliminary

Preliminary Datasheet NDS-043 Rev. 2, 012414

Nitronex, LLC

523 Davis Drive, Suite 500

Morrisville, NC 27560 USA

+1.919.807.9100 (telephone)

+1.919.4 7 2.0692 (fax)

info@nitronex.com

www.nitronex.com

Additional Information

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