V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
SB370 thru SB3100
FEATURES
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0
For use in low voltage,high frequency inverters,free
wheeling,and polarity protection applications
MECHANICAL DATA
Case : JEDEC DO-201AD molded plastic
Polarity : Color band denotes cathode
Weight : 0.04 ounces, 1.1 grams
Mounting position : Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.℃
Maximum Average Forward Rectified Current
.375",(9.5mm) Lead Lengths
@TC
=125
℃
Peak Forward Surge Current
8.3ms single half sine-wave
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Forward
Voltage at
3.0
80
0.79
T
J
Operating Temperature Range
-55 to +150 ℃
T
STG
Storage Temperature Range
-55 to +150 ℃
Typical Thermal Resistance (Note 2)
10
10
/W℃
I
R
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
(Ta) =100 ℃
@T
J
(Ta)
=25 ℃0.02
5
mA
V
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
SB370
70
49
70
80
56
80
100
70
100
90
63
90
C
J
Typical Junction Capacitance (Note 1)
90
pF
I
F
=3.0A,T
J
=100 ℃
I
F
=3.0A,T
J
=25 ℃
0.69
All Dimensions in millimeter
Max.
Min.
DO-201AD
Dim.
A
D
C
B
25.4
9.50
-
7.30
1.20
4.80 5.30
1.30
DO-201AD
A
C
D
A
B
SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 70 to 100 Volts
FORWARD CURRENT - 3.0 Amperes
SB380
SB390
SB3100
SEMICONDUCTOR
LITE-ON
REV. 11, Sep-2012, KDHF03
NOTES : 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Lead and Case.
@T
A
=25
℃
R
0JL
R
0JC