KST-9009-000 1
PN2907A
PNP Silicon Transistor
Descriptions
• General purpose application
• Switching application
Features
• Low Leakage current
• Low collector saturation v oltage enabling low voltage operation
• Complementary pair with PN2222A
Ordering Information
Type NO. Marking Package Code
PN2907A PN2907A TO-92
Outline Dimensions unit :
mm
4.5±0.1
4.5±0.1
0.4±0.02
1.27 Typ.
2.54 Typ.
1 2 3
3.45±0.1
2.25±0.1
2.06±0.1
1.20±0.1
0.38
PIN Conne cti ons
1. Emitter
2. Bas e
3. Collector
14.0±0.40
S
Se
em
mi
ic
co
on
nd
du
uc
ct
to
or
r
KST-9009-000 2
PN2907A
Absolute maximum ratings Ta=25°
°°
°C
Characteristic Symbol Ratings Unit
Collector-Base voltage VCBO -60 V
Collector-Emitter voltage VCEO -60 V
Emitter-base voltage VEBO -5 V
Collector current IC-600 mA
Collector dissipation PC625 mW
Junction temperature Tj150 °C
Storage temperature range Tstg -55~150 °C
Electrical Characteristics Ta=25°
°°
°C
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collec tor-Base breakdown voltage BVCBO IC=-10µA, IE=0 -60 - - V
Collector - Emitter breakdown voltage BVCEO IC=-10mA, IB=0 -60 - - V
Emitter-Base break d own v olta ge BVEBO IE=-10µA, IC=0 -5 - - V
Collector cut-off current ICBO VCB=-60V, IE=0 - - -20 nA
DC current gain hFE VCE=-10V, IC=-10mA 100 - - -
Collec tor -Emitter s a turation voltage VCE(sat) IC=-150mA, IB=-15mA - - -0.4 V
Transition frequency fTVCE=-5. 0V, IC=-20mA,
f=100MHz 200 - - MHz
Collec tor output capac itance Cob VCB=-10V, IE=0, f=1MHz - - 8 pF
Turn-on time ton --45ns
Delay time td--10ns
Rise time tr
VCC=-30Vdc,IC=-150mAdc,
IB1=-15mAdc --40ns
Turn-off time toff - - 100 ns
Storage time ts--80ns
Fall time tf
VCC=-6.0Vdc,IC=-150mAdc,
IB1=IB2=-15mAdc --30ns
KST-9009-000 3
PN2907A
Electrical Characteristic Curves
Fig. 4 Cob-VCB
Fig. 2 hFE-IC
Fig. 1 PC-Ta
Fig. 3 VCE(sat)-IC
