ES2A, ES2B, ES2C, ES2D www.vishay.com Vishay General Semiconductor Surface-Mount Ultrafast Plastic Rectifier FEATURES * Glass passivated pellet chip junction Available * Ideal for automated placement * Ultrafast recovery times for high efficiency * Low forward voltage, low power losses * High forward surge capability * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C SMB (DO-214AA) Anode * AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3 Cathode * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS LINKS TO ADDITIONAL RESOURCES For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive, and telecommunication. 3D 3D 3D Models MECHANICAL DATA Case: SMB (DO-214AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Base P/NHME3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified ("_X" denotes revision code e.g. A, B, .....) PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 50 V, 100 V, 150 V, 200 V IFSM 50 A trr 20 ns VF 0.90 V TJ max. 150 C Package SMB (DO-214AA) Circuit configuration Single Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3, M3, HE3, and HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Device marking code ES2A ES2B ES2C ES2D EA EB EC ED UNIT Maximum repetitive peak reverse voltage VRRM 50 100 150 200 V Maximum RMS voltage VRMS 35 70 105 140 V Maximum DC blocking voltage VDC 50 100 150 200 V Maximum average forward rectified current at TL = 110 C IF(AV) 2.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 50 A TJ, TSTG -55 to +150 C Operating junction and storage temperature range Revision: 01-Apr-2020 Document Number: 88587 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ES2A, ES2B, ES2C, ES2D www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage SYMBOL 2.0 A VF TA = 25 C Maximum DC reverse current at rated DC blocking voltage IR TA = 100 C Max. reverse recovery time IF = 0.5 A, IR = 1.0 A, lrr = 0.25 A Maximum reverse recovery time IF = 2.0 A, VR = 30 V, dI/dt = 50 A/s, Ir = 10 % IRM Maximum stored charge IF = 2.0 A, VR = 30 V, dI/dt = 50 A/s, Ir = 10 % IRM Typical junction capacitance 4.0 V, 1 MHz (1) trr TJ = 25 C trr TJ = 100 C TJ = 25 C Qrr TJ = 100 C ES2A ES2B ES2C ES2D 0.90 10 350 20 30 50 10 25 UNIT V A ns ns nC CJ 18 pF SYMBOL ES2A ES2B ES2C ES2D UNIT RJA (1) 75 RJL (1) 20 Note (1) Pulse test: 300 ms pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER Typical thermal resistance C/W Note (1) Units mounted on PCB 5.0 mm x 5.0 mm (0.013 mm thick) land areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE ES2D-E3/52T 0.096 52T 750 7" diameter plastic tape and reel ES2D-E3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel ES2DHE3_A/H (1) 0.096 H 750 7" diameter plastic tape and reel ES2DHE3_A/I (1) 0.096 I 3200 13" diameter plastic tape and reel ES2D-M3/52T 0.096 52T 750 7" diameter plastic tape and reel ES2D-M3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel 0.096 H 750 7" diameter plastic tape and reel 0.096 I 3200 13" diameter plastic tape and reel ES2DHM3_A/H (1) ES2DHM3_A/I (1) Note (1) AEC-Q101 qualified Revision: 01-Apr-2020 Document Number: 88587 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ES2A, ES2B, ES2C, ES2D www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) Axis Title 1.0 Resistive or Inductive Load P.C.B. Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) Copper Pad Areas 80 90 100 110 120 130 140 1000 TJ = 150 C TJ = 125 C 100 TJ = 100 C 1000 TJ = 25 C 100 1st line 2nd line 2.0 0 10 1 0.1 0.01 TJ = -40 C 10 0.001 150 0 Lead Temperature (C) 20 40 60 80 Fig. 4 - Typical Reverse Leakage Characteristics 60 60 8.3 ms Single Half Sine-Wave at TL = 110 C Junction Capacitance (pF) 50 40 30 20 10 0 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p 50 40 30 20 10 0 1 10 100 0.1 1 10 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 5 - Typical Junction Capacitance 10000 TJ = 150 C 10 TJ = 125 C 1000 TJ = 100 C 1 100 TJ = 25 C 0.1 TJ = -40 C 0.01 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Transient Thermal Impedance (C/W) Axis Title 100 2nd line Instantaneous Forward Current (A) 100 Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Peak Forward Surge Current (A) 10000 10 000 2nd line Instantaneous Reverse Current (A) Average Forward Rectified Current (A) 3.0 100 100 Junction to Ambient 10 1 Mounted on 5.0 mm x 5.0 mm copper pad 0.1 0.001 0.1 10 1000 t - Pulse Duration (s) Fig. 6 - Transient Thermal Impedance Revision: 01-Apr-2020 Document Number: 88587 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ES2A, ES2B, ES2C, ES2D www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMB (DO-214AA) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.220 (5.59) REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) Revision: 01-Apr-2020 Document Number: 88587 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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