\ SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS T0-98 PACKAGE Device 2N4256 2N4424 2N4425 2N5172 2N5174 2N5232 2N5232A 2N5249 2N5249A 2N5305 2N5306 2N5307 2N5308 2N5309 2N5310 2N5311 2N5354 2N5355 2N5356 2N5365 2N5366 2N5418 2N5419 2N5420 2N6076 Di6G6 D29E1 D29E2 D29E4 D29E5 D29E6 D29E9 D29E10 D33D21 D33D22 033024 033025 D33D 26 D33D29 D33D30 bmn ; : BVcEO @10mA (Vv) 40 40 40 25 75 50 50 50 50 25 40 50 50 50 Nee Vce(sat) Min.-Max. @ Ic, Voge (V) |(V) Max. @ lo, Ip Toe ee 7 : 0.125 | 10mA, 1.0mA aa | 0.3 5OmA, 3mA as 0.3 50mA, 3mA | 0.25 | 10mA, 1mA : 0.95 10mA, 1.0mMA a 0.125 | 10mA, 1mA a 0.125 | 10mA, 1mA ; : 0.125 | 10mA, 1mA : : 0.125 | 10mA, 1mA . a i 1.4 }200mA, 0.2mA | 1.4 200mA, 0.2mA | 1.4 200mA, 0.2mA 1.4 200mA, 0.2mA : 0.125 | 10mA, 1mA i 0.125 10mA, 1mA IC 0.125 | 10mA, 1mA : 20 0.25 5OmA, 2.5mA : : 0.25 50mA, 2.5mA i 0.25 50mA, 2.5mA i 0.25 50mA, 2.5mA 0.25 50mA, 2.5mA ] 0.25 50mA, 2.5mA 0.25 50mA, 2.5mA | 0.25 50mA, 2.5mA : 0 0.25 10mA, 1.0mA : a 0.6 10mA, 1.0mA 0.75 |500mA, 50mA 0.75 |500mA, 50mA | 0.75 |500mA, 50mA C 0.75 |S00mA, 50mA | Bi : ' 0.75 |500mA, 50mA ' . 500mA, 50mA 0.75 |500mA, 50mA : ; 0.75 |500mA, 50mA i ) 0.75 |500mA, 50mA : 0.75 500mA, 50mA |] 0.75 |500mA, 50mA : 21 0.75 500mA, 50mA | : 0.75 |500mA, 50mA : - 0.75 |500mA, 50mA . 102 fr Cp @10V Typical (MHz) Py @ 25C (mW) 1 MHz Typical (Pf) gqaagqd NNN BeaBAEB NNNNN VN aad Oprah\y DEVICE NPN 2N5418 2N5419 D33D21 D33D22 D33D24 D33D25 D33D26 D33D29 D33D30 PNP 2N5354 2N5355 2N6076 D29E1 D29E2 D29E4 D29E5 D29E6 D29E9 D29E10 SILICON SIGNAL TRANSISTORS COMPLEMENTARY PAIRS TO-98 PACKAGE Min.-Max. 40-120 100-300 40-120 100-300 100-500 60-200 150-500 60-120 100-200 150-300 60-120 100-200 60-200 150-500 60-120 100-200 150-300 60-120 100-200 ENCAPSULATED TO-98 hee VcE(SAT) @ lo, Vee (v) (Vv) Max. @ le, Ig 50mA, 1 50mA, 1 50mA, 1 50mA, 1 10mA, 10 2mA, 2 2mA, 2 2mA, 2 2mA, 2 2mA, 2 2mA, 2 2mA, 2 2mA, 2 2mA, 2 2mA, 2 2mA, 2 2mA, 2 2mA, 2 2mA, 2 ENCAPSULATED TO-92 106 COMPLEMENT 2N5418 2N5419 2N5354 2N5355 2N5172 D33D21 D33D22 033D24 D33D 25 033026 D33D29 D33030 D291 D29E2 D29E4 D29E5 D29E6 D29E9 D29E 10Silicon (1-1 Transistors D25E47 D33024.27 D29E4I1-71 | 033024I1-2711 aaaaeaanaannananoanananonuuuOuDuDuuDQuaaee ee The PNP D29E4-7 series and the NPN D33D24-27 series are silicon, planar, passivated, epitaxial trans- istor intended for general purpose applications. These complementary pairs are especially suited for the drive stage in high power amplifiers, and for control and television circuitry. FEATURES: Low Collector Saturation Voltage Excellent Beta Linearity Over A Wide Current Range Heatsinking Available On All Units vw, NOTE: Observe proper polarity on biases for PNPs and NPNs CS absolute maximum ratings: (25C) (uniess otherwise specified) Voltage Collector to Emitter Voro 40 Volts Emitter to Base Verso 5 Volts Collector to Base Vso 50 Volts Collector to Emitter Vous 50 Volts Current Collector (Continuous) Ie 750 mA Collector (Pulsed, 300 usec. pulse width, = 2% duty cycle) Icu 1000 mA bimensions wir Dissipation JEDEC OUTLINE TO-98 wg Wen Total Power (Free Air, teers a te 1 (Ga) + T, = 25C) * Pr 500 mW omar rw Total Power with J1 Heatsink Bea, (Free Air, T, S 25C) ** Pr 700 mW nee eee ToL eRAED Total Power with J1 Heatsink (Case Temp., Tc S 25C) *** Pr 1000 mW 3 uesgs Temperature wore Storage Tsra 65 to +150 C Operating Ts 65 to +150 C : Lead soldering (46 + % - OD soa from case for 10 sec. max.) Ti +260 C ere *Derate 4.0 mW/C increase in ambient temperature above 25C. **Derate 5.6 mW/C increase serowree ete woLmweee in ambient temperature above 25C. ***Derate 8.0 mW/C increase in case temperature above 25C, Win Jt MEATSINN electrical characteristics: (25C) (unless otherwise specified) NOTE: Characteristics apply to both heatsinked and non-heatsinked devices. STATIC CHARACTERISTICS Min. Max. Collector Cutoff Current (Vice = 25V) Tors _ 100 nA (Vow = 25V, Ts, = 100C) Tcrs _ 15 pA Forward Current Transfer Ratio (Ic =2 mA, Ver = 2v) D29E4/D33D24 hre 60 120 D29E5/D33D25 hre 100 200 D29E6/D33D26 hre 150 300 D29E7/D33D27 hre 200 500 (Ic = 500 mA, Vez = 2V) D29E4/D33D24 ** hog 20 _ D29E5/D33D25 ** hop 25 _ D29E6/D33D26 ** hep 25 D29E7/D33D27 ** hoe 25 _ Collector Emitter Breakdown Voltage (Ic = 10 mA) ** V ippyceo 40 Volts (Ic = 10 pA) Vspces 50 Volts Emitter Base Breakdown Voltage (Iz = 10 pA) Vosmeso 5 Volts Collector Saturation Voltage (Ic = 500 mA, Is = 50 mA) ** Vongan _ 0.75 Volts Base Saturation Voltage (Ic = 500 mA, In = 50 mA) ** Varcsan _ 1.2 Volts DYNAMIC CHARACTERISTICS Output Capacitance, Common Base (Ver = 10V, f= 1MHz) Cev _ 15 pF Input Capacitance, Common Base (Vex = 0.5V, f = 1 MHz) Cen _ 55 pF Gain Bandwidth Product (Ic = 50 mA, Vou = 2V, f = 20MHz) D29E4/D33D24 f, 80 MHz D29E5/D33D25 fr. 120 MHz D29E6/D33D26 fr 135 MHz D29E7/D33D27 fr 150 MHz **Pulse Conditions: Pulse width < 300pis Duty cycle S 2% 1076h_ FORWARD CURRENT TRANSFER RATIO AT V Fe beg FORWARD CURRENT TRANSFER RATIO AT ce *2V Yor (SAT) -COLLECTOR EMITTER SATURATION VOLTAGE -VOLTS D29E4-7 D33D24-27 D29E4J1-7J1 | D33D24J1-27J1 TYPICAL hrz VS. Ic 350 beoE4 033024 0296s = 033025 ee 300 2 8 8 w } g hee FORWARD CURRENT TRANSFER RATIO AT oe 2Vv OF 1.0 lo 100 1000 0.1 1 10 I, COLLECTOR CURRENT-mA I, "COLLECTOR CURRENT ~ mA FIGURE 1 FIGURE 2 o2se7T 033027 -~ o 3 S lesec om 3 w r -FORWARD CURRENT TRANSFER RATIO AT Nog 124 Mee Of Lo 10 100 1000 Ig COLLECTOR CURRENT-mA ol 1.0 19 I, COLLECTOR CURRENT ~mA FIGURE 3 FIGURE 4 TYPICAL Von (gat) VS. lo, Is = 1/20 3s nwo aa 5 =COLLECTOR EMITTER SATURATION VOLTAGE - VOLTS 9 ceisar) Oo 2 "OF ot 1.0 10 00 1000 . Ol 10 0 too 4000 I, ~COLLECTOR CURRENT mA T,- COLL ECTOR CURRENT mA 2 2 FIGURE 5 FIGURE 6 1077D29E4-7 D33D24-27 D29E4J1-7J1 | D33D24J1-27J1 TYPICAL Vez (sat) VS. Ic, ly = Ic/20 (continued) io o2ves osc? 033026 033027 <== ol Voge (sat) -COLLECTOR EMITTER SATURATION VOLTAGE - VOLTS Vee (sar) -COLLECTOR EMITTER SATURATION VOLTAGE- VOLTS 2 0.01 ot 1o lo 100 1000 0.01 ol Lo 10 100 tooo a -COLLECTOR CURRENT-mA T,~ COLLECTOR CURRENT ~maA FIGURE 7 FIGURE 8 TYPICAL Vox (sat) VS. lor Is = 1/10 10 ose - 033024 emn 02955 0330235 -= 0 10 10 0.01 oO. 10 10 100 100 I, -COLLECTOR CURRENT-mA Ip -COLLECTOR CURRENT-mA i ATION V4 = 7 Vor (SAT) COLLECTOR EMITTER SATURATIO! 'OLTAGE - VOLTS Vor (SAT) -COLLECTOR EMITTER SATURATION VOLTAGE - VOLTS FIGURE 9 FIGURE 10 02956 033086 02957 = 033027 Voe (sat) COLLECTOR EMITTER SATURATION VOLTAGE ~ VOLTS Veg tsar COLLECTOR EMITTER SATURATION VOLTAGE-VOLTS 10 400 1000 9.01 Ol 10 10 wo 1000 Ig -COLLECTOR CURRENT -mA I, COLLECTOR CURRENT mA FIGURE 11 FIGURE 12 1078D29E4-7 D33D24-27 D29E4J1-7J1 | D33D24J1-27J1 TYPICAL V;; VS. I. 029E5 BASE EMITTER VOLTAGE - VOLTS Vee -BASE EMITTER VOLTAGE- VOLTS be 10 loo loo0, 0.01 00 1 Tg- COLLECTOR CURRENT mA i, =COLLECTOR CURRENT mA FIGURE 13 FIGURE 14 o29E7 o2966 === 033026 eee 2 033027 Vee -BASE EMITTER VOLTAGE -VOLTS -BASE EMITTER VOLTAGE-VOLTS v. Ol ' 1o 100 1000 Ty ~COLLECTOR CURRENT-mA T,- COLLECTOR CURRENT-mA FIGURE 15 FIGURE 16 1079