BCW66H
Document number: DS33003 Rev. 5 - 2
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45V NPN SMALL SIGNAL TRANSISTOR IN SOT23
Features
BVCEO > 45V
I
C = 800mA High Continuous Collector Current
Low Saturation Voltage VCE(sat) < 300mV @ 100mA
Complementary PNP Type: BCW68H
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP capable (Note 4)
Mechanical Data
Case: SOT23
Case Material: molded plastic, “Green” molding compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight 0.008 grams (approximate)
Ordering Information (Notes 4 & 5)
Part Number Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
BCW66HTA AEC-Q101 EH 7 8 3,000
BCW66HQTA Automotive EH 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
EH = Product Type Marking Code
EH
Top View
Pin-Out
C
E
B
C
E
B
Top View Device Symbol
SOT23
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 75 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 7 V
Continuous Collector Current IC 800 mA
Peak Pulse Current ICM 1000 mA
Base Current IB 100 mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 6) PD
310 mW
(Note 7) 350
Thermal Resistance, Junction to Ambient (Note 6) RθJA 403 C/W
(Note 7) 357
Thermal Resistance, Junction to Leads (Note 8) RθJL 350 C/W
Operating and Storage Temperature Range TJ,TSTG -55 to +150 C
Notes: 6. For a device mounted on minimum recommended pad layout 1oz weight copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
7. Same as Note 6, except the device is mounted on 15mm X 15mm 1oz copper.
8. Thermal resistance from junction to solder-point (at the end of the leads).
0 255075100125150
0.0
0.1
0.2
0.3
0.4
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
50
100
150
200
250
300
350
400
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
10m 100m 1 10 100 1k
0.1
1
10
Single Pulse. Tamb=25°C
Pulse Power Dissipation
Pulse Width (s)
Max Power Dissipation (W)
BCW66H
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage BVCES 75 — V
IC = 10µA
Collector-Emitter Breakdown Voltage
(base open) (Note 9) BVCEO 45 — V
ICEO = 10mA
Emitter-Base Breakdown Voltage BVEBO 7 — V
IEBO = 10µA
Collector-Emitter Cut-Off Current ICES
<1
20
20
nA
µA
VCES = 45V
VCES = 45V, TA = +150°C
Emitter-Base Cut-Off Current IEBO — <1 20 nA
VEBO = 5.6V
ON CHARACTERISTICS (Note 9)
Static Forward Current Transfer Ratio hFE
80
180
250
100
350
630
IC = 100µA, VCE = 10V
IC = 10mA, VCE = 1V
IC = 100mA, VCE = 1V
IC = 500mA, VCE = 2V
Collector-Emitter Saturation Voltage VCE(sat)
0.3
0.7 mV IC = 100mA, IB = 10mA
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage VBE
(
sat
)
— — 2 V
IC = 500mA, IB = 50mA
SMALL SIGNAL CHARACTERISTICS (Note 9)
Transition Frequency fT 100 — MHz
IC = 20mA, VCE = 10V,
f = 100MHz
Output Capacitance Cobo — 8 12 pF
VCB = 10V, f = 1MHz
Input Capacitance Cibo — — 80 pF
VCB = -0.5V, f = 1MHz
Noise Figure N 2 10 dB IC = 0.2mA. VCE = 5V,
RG = 1K
Turn-On Time ton — — 100 ns
IC = 150mA.
IB1 = -IB2 = 15mA
RL = 150
Turn-Off Time toff — — 400 ns
Notes: 9. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%
BCW66H
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
A
M
JL
D
F
BC
H
K
G
K1
XE
Y
C
Z
BCW66H
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IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
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