SI4884DY - Fairchild Semiconductor

January 2001

Si4884DY

Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET

General Description Features

Absolute Maximum Ratings TA = 25oC unless other wise noted

Symbol Parameter Si4884DY Units

VDSS Drain-Source Voltage 30 V

VGSS Gate-Source Voltage ±20 V

IDDrain Current - Continuous (Note 1a) 11.5 A

- Pulsed 50

PDPower Dissipation for Single Operation (Note 1a) 2.5 W

(Note 1b) 1.2

(Note 1c) 1

TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C

THERMAL CHARACTERISTICS

RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)50 °C/W

RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W

Si4884DY Rev.A

11.5 A, 30 V. RDS(ON) = 0.010 Ω @ VGS = 10 V

RDS(ON) = 0.015 Ω @ VGS = 4.5 V.

Optimized for use in switching DC/DC converters with

PWM controllers.

Very fast switching.

Low gate charge (typical Qg = 19 nC).

SOT-23 SuperSOTTM-8 SOIC-16

SO-8 SOT-223SuperSOTTM-6

This N-Channel Logic Level MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers.

The MOSFET features faster switching and lower gate

charge than other MOSFETs with comparable RDS(ON)

specifications.

The result is a MOSFET that is easy and safer to drive (even

at very high frequencies), and DC/DC power supply designs

with higher overall efficiency.

1

6

7

8

2

4

3

5

S

D

S

SO-8

D

G

pin 1

4884

Electrical Characteristics (TA = 25 OC unless otherwise noted )

Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, I D = 250 µA 30 V

∆BVDSS/∆TJBreakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC23 mV/ oC

IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1µA

TJ = 55°C 10 µA

IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA

IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -100 nA

ON CHARACTERISTICS (Note 2)

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA11.7 3V

∆VGS(th)/∆TJGate Threshold Voltage Temp.Coefficient ID = 250 µA, Referenced to 25 oC-5 mV/oC

RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 11.5 A0.0085 0.01 Ω

TJ =125°C 0.014 0.017

VGS = 4.5 V, ID = 9.5 A0.0125 0.015

ID(ON) On-State Drain Current VGS = 10 V, VDS = 5 V 50 A

gFS Forward Transconductance VDS = 15 V, ID = 11.5 A40 S

DYNAMIC CHARACTERISTICS

Ciss Input Capacitance VDS = 15 V, VGS = 0 V,

f = 1.0 MHz 2070 pF

Coss Output Capacitance 510 pF

Crss Reverse Transfer Capacitance 235 pF

SWITCHING CHARACTERISTICS (Note 2)

tD(on)Turn - On Delay Time VDS= 15 V, I D = 1 A 13 21 ns

trTurn - On Rise Time VGS = 10 V , RGEN = 6 Ω 10 18 ns

tD(off) Turn - Off Delay Time 36 58 ns

tfTurn - Off Fall Time 13 23 ns

QgTotal Gate Charge VDS = 15 V, ID = 11.5 A, 19 27 nC

Qgs Gate-Source Charge VGS = 5 V 7nC

Qgd Gate-Drain Charge 6nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

ISMaximum Continuous Drain-Source Diode Forward Current 2.1 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2)1.2 V

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by

design while RθCA is determined by the user's board design.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

Si4884DY Rev.A

c. 125OC/W on a 0.006 in2 pad

of 2oz copper.

b. 105OC/W on a 0.04 in2

pad of 2oz copper.

a. 50OC/W on a 1 in2 pad

of 2oz copper.

Si4884DY Rev.A

00.5 11.5 22.5

0

10

20

30

40

50

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN-SOURCE CURRENT (A)

3.5

4.0

4.5

DS

D

V = 10V

GS

5.0

6.0

3.0

0 10 20 30 40 50

0.5

1

1.5

2

2.5

3

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

V = 3.5V

GS

D

R , NORMALIZED

DS(ON)

10

6.0

4.0

5.0

4.5

Typical Electrical Characteristics

Figure 1. On-Region Characteristics.Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

-50 -25 025 50 75 100 125 150

0.6

0.8

1

1.2

1.4

1.6

1.8

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE ON-RESISTANCE

J

V =10V

GS

I = 11.5A

D

R , NORMALIZED

DS(ON)

Figure 3. On-Resistance Variation with

Temperature.

012345

0

10

20

30

40

50

V , GATE TO SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

25°C

125°C

V = 10V

DS

GS

D

T = -55°C

J

Figure 5. Transfer Characteristics.

0.2 0.4 0.6 0.8 11.2

0.0001

0.001

0.01

0.1

1

10

50

V , BODY DIODE FORWARD VOLTAGE (V)

I , REVERSE DRAIN CURRENT (A)

T = 125°C

J

25°C

-55°C

V =0V

GS

SD

S

Figure 6. Body Diode Forward Voltage

Variation with Source Current

and Temperature.

24 6 810

0

0.01

0.02

0.03

0.04

V ,GATE-SOURCE VOLTAGE (V)

DRAIN-SOURCE ON-RESISTANCE

I = 11.5A

D

GS

R ,(OHM)

DS(ON)

T = 125 C

Ao

T = 25 C

Ao

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

Si4884DY Rev.A

0 10 20 30 40

0

2

4

6

8

10

Q , GATE CHARGE (nC)

V , GATE-SOURCE VOLTAGE (V)

g

GS

I = 11.5A

DV = 10V

DS 15V

20V

0.1 0.2 0.5 1 2 5 10 30 50

0.01

0.1

1

3

10

20

50

100

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

DS

D

1s

100ms

10s

10ms

RDS(ON) LIMIT

1ms

100us

DC

V = 10V

SINGLE PULSE

R = See Note 1c

T = 25°C

GS

A

θJA

0.001 0.01 0.1 1 10 100 300

0

10

20

30

40

50

SINGLE PULSE TIME (SEC)

POWER (W)

SINGLE PULSE

R =See Note 1c

T = 25°C

θJA

A

Figure 10. Single Pulse Maximum Power

Dissipation.

0.1 0.2 0.5 1 2 5 10 20 30

100

200

500

1000

2000

3000

V , DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

DS

C

iss

f = 1 MHz

V = 0V

GS

C

oss

C

rss

Figure 8. Capacitance Characteristics.

Figure 7. Gate Charge Characteristics.

Figure 9. Maximum Safe Operating Area.

Typical Electrical And Thermal Characteristics

0.0001 0.001 0.01 0.1 1 10 100 300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (sec)

TRANSIENT THERMAL RESISTANCE

r(t), NORMALIZED EFFECTIVE

1

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

Duty Cycle, D = t /t

12

R (t) = r(t) * R

R =See Note 1c

θJA

T - T = P * R (t)

θJA

A

J

P(pk)

t

1 t

2

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT ST A TUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Formative or

In Design

First Production

Full Production

Not In Production

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

PowerTrench

QFET™

QS™

QT Optoelectronics™

Quiet Series™

SILENT SWITCHER

SMART ST ART™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

FASTr™

GlobalOptoisolator™

GTO™

HiSeC™

ISOPLANAR™

MICROWIRE™

OPTOLOGIC™

OPTOPLANAR™

PACMAN™

POP™

Rev . G



ACEx™

Bottomless™

CoolFET™

CROSSVOLT™

DOME™

E2CMOSTM

EnSignaTM

FACT™

F ACT Quiet Series™

FAST

SyncFET™

TinyLogic™

UHC™

VCX™

