TRH100A190-11E12 - CINCON - Datasheet.Live

ZXTC6718MC

Document number: DS31927 Rev. 4 - 2 1 of 9

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COMPLEMENTARY 20V LOW SATURATION TRANSISTORS

Features

NPN Transistor

• BVCEO > 20V

• I

C = 4.5A Continuous Collector Current

• Low Saturation Voltage (150mV max @ 1A)

• R

SAT = 47mΩ for a low equivalent On-Resistance

PNP Transistor

• BVCEO > -20V

• I

C = -3.5A Continuous Collector Current

• Low Saturation Voltage (-220mV max @ -1A)

• R

SAT = 64mΩ for a low equivalent On-Resistance

• h

FE characterized up to 6A for high current gain hold up

• Low profile 0.8mm high package for thin applications

• R

θJA efficient, 40% lower than SOT26

• 6mm2 footprint, 50% smaller than TSOP6 and SOT26

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

• PPAP capable (Note 4)

Mechanical Data

• Case: W-DFN3020-8 Type B

• Nominal package height: 0.8mm

• Case material: molded plastic. “Green” molding compound.

• UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - NiPdAu, Solderable per MIL-STD-202,

Method 208

• Weight: 0.013 grams (approximate)

Applications

• DC – DC Converters

• Charging circuits

• Power switches

• Motor control

• LED Backlighting circuits

• Portable applications

Ordering Information (Note 4 & 5)

Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXTC6718MCTA AEC-Q101 DB2 7 8 3,000

ZXTC6718MCQTA Automotive DB2 7 8 3,000

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com for more information about Diodes In corpor ated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally

the same, except where specified.

5. For packaging details, go to our website at http://www.diodes.com

Marking Information

DB2 = Product type marking code

Top view, dot denotes pin 1

Equivalent Circuit

Top View Bottom View

Pin-Out

NPN Transistor

W-DFN3020-8

Type B

Bottom View

PNP Transistor

C2 C2 C1 C1

E2 B2 E1 B1

C2 C1

Pin 1

DB2

ZXTC6718MC

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Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol NPN PNP Unit

Collector-Base Voltage VCBO 40 -25 V

Collector-Emitter Voltage VCEO 20 -20 V

Emitter-Base Voltage VEBO 7 -7 V

Peak Pulse Current ICM 12 -6 A

Continuous Collector Current (Notes 6 & 9) IC 4.5 -3.5 A

Continuous Collector Current (Notes 7 & 9) 5 -3.8

Base Current IB 1 A

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol NPN PNP Unit

Power Dissipation

Linear Derating Factor

(Notes 6 & 9)

1.5

mW/°C

(Notes 7 & 9) 2.45

19.6

(Notes 8 & 9) 1.13

(Notes 8 & 10) 1.7

13.6

Thermal Resistance, Junction to Ambient

(Notes 6 & 9)

RθJA

83.3

°C/W

(Notes 7 & 9) 51.0

(Notes 8 & 9) 111

(Notes 8 & 10) 73.5

Thermal Resistance, Junction to Lead (Notes 9 & 11) R

JL 17.1

Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Notes: 6. For a dual device surface mounted on 28mm x 28mm (8cm2) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is

measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half.

7. Same as note (6), except the device is measured at t <5 sec.

8. Same as note (6), except the device is surface mounted on 31mm x 31mm (10cm2) FR4 PCB with high coverage of single sided 1oz copper .

9. For a dual device with one active die.

10. For dual device with 2 active die running at equal power.

11. Thermal resistance from junction to solder-point (on the exposed collector pads).

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Thermal Characteristics and Derating Information

0.1 1 10

0.01

0.1

0 25 50 75 100 125 150

0.0

0.5

1.0

1.5

2.0

100µ 1m 10m 100m 1 10 100 1k

0.1 1 10 100

100

125

150

175

200

225

100m 1 10 100

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0.1 1 10

0.01

0.1

8sqcm 2oz Cu

On e a ctive die 100us

100ms

VCE(SAT)

Limited

1ms

NPN Safe Operating Area

Single Pulse, Tamb=25°C

10ms

IC Collector Current (A)

VCE Collector-Emitter Voltage (V)

10sqcm 1oz Cu

One active die

10sqcm 1oz Cu

Two active die

8sqcm 2oz Cu

One active die

Derating Curve

Ma x Pow e r Dissi p ati o n (W )

Temperatu re (°C)

8sqcm 2oz Cu

One active die

D=0.2

D=0.5

D=0.1

Transient Thermal Im ped an ce

S ingle Pulse

D=0.05

Thermal Resistance (°C/W)

Puls e Width (s)

1oz Cu

Two active die

1oz Cu

One active die

2oz Cu

On ce a ctive die 2oz Cu

Two a ctive die

Thermal Resistance v B oard A rea

Thermal Resistance (°C/W)

Board Cu Area (sqcm)

1oz Cu

One active die

1oz Cu

Two a ctive die

2oz Cu

One active die

2oz Cu

Two a ctive die

Tamb=25°C

Tj max=150°C

Continuous

Power Dissipation v Bo ard A rea

PD Dissipation (W)

Board Cu Area (sqcm)

8sqcm 2oz Cu

One active die 100us

1ms

10ms

100ms

Single Pulse, Tamb=25°C

VCE(SAT)

Limited

PNP Safe O p erating Area

-IC Collector Current (A)

-VCE Collector-Emitter Voltage (V)

ZXTC6718MC

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NPN - Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage BVCBO 40 100 - V

IC = 100µA

Collector-Emitter Breakdown Voltage (Note 12) BVCEO 20 27 - V

IC = 10mA

Emitter-Base Breakdown Voltage BVEBO 7 8.2 - V

IE = 100µA

Collector Cutoff Current ICBO - - 100 nA

VCB = 30V

Emitter Cutoff Current IEBO - - 100 nA VEB = 6V

Collector Emitter Cutoff Current ICES - - 100 nA

VCE = 16V

Static Forward Current Transfer Ratio (Note 12) hFE

200

300

200

100

400

450

360

180

IC = 10mA, VCE = 2V

IC = 200mA, VCE = 2V

IC = 2A, VCE = 2V

IC = 6A, VCE = 2V

Collector-Emitter Saturation Voltage (Note 12) VCE(sat) -

115

190

210

150

135

250

300

IC = 0.1A, IB = 10mA

IC = 1A, IB = 10mA

IC = 2A, IB = 50mA

IC = 3A, IB = 100mA

IC = 4.5A, IB= 125mA

Base-Emitter Turn-On Voltage (Note 12) VBE

(

)

- 0.88 0.97 V

IC = 4.5A, VCE = 2V

Base-Emitter Saturation Voltage (Note 12) VBE

(

sat

)

- 0.98 1.07 V

IC = 4.5A, IB = 125mA

Output Capacitance Cobo - 23 30 pF

VCB = 10V, f = 1MHz

Transition Frequency fT 100 140 - MHz

VCE = 10V, IC = 50mA,

f = 100MHz

Turn-on Time ton - 170 - ns

VCC = 10V, IC = 3A

IB1 = IB2 = 10mA Turn-off Time toff - 400 - ns

Notes: 12. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

ZXTC6718MC

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NPN - Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

1m 10m 100m 1 10

10m

100m

1m 10m 100m 1 10

0.00

0.05

0.10

0.15

0.20

0.25

1m 10m 100m 1 10

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1m 10m 100m 1 10

0.4

0.6

0.8

1.0

1m 10m 100m 1 10

0.4

0.6

0.8

1.0

180

270

360

450

540

630

VCE(SAT) v IC

Tamb=25°C

IC/IB=100

IC/IB=50

IC/IB=10

VCE(SAT) (V)

IC Collector Current (A)

VBE(SAT) v IC

IC/IB=50

100°C

25°C

-55°C

VCE(SAT) (V)

IC Collector Current (A)

hFE v IC

VCE=2V

-55°C

25°C

100°C

Normalised Gain

IC Coll ecto r Curre nt (A)

25°C

VCE(SAT) v IC

IC/IB=50

100°C

-55°C

VBE(SAT) (V)

IC Collector Current (A)

VBE(ON) v IC

VCE=2V

100°C

25°C

-55°C

VBE(ON) (V )

IC Collector Current (A)

Typical Gain (hFE)

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PNP - Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage BVCBO -25 -35 - V

IC = -100µA

Collector-Emitter Breakdown Voltage (Note 12) BVCEO -20 -25 - V

IC = -10mA

Emitter-Base Breakdown Voltage BVEBO -7 -8.5 - V

IE = -100µA

Collector Cutoff Current ICBO - - -100 nA

VCB = -20V

Emitter Cutoff Current IEBO - - -100 nA VEB = -6V

Collector Emitter Cutoff Current ICES - - -100 nA

VCES = -16V

Static Forward Current Transfer Ratio (Note 12) hFE

300

150

475

450

230

IC = -10mA, VCE = -2V

IC = -100mA, VCE = -2V

IC = -2A, VCE = -2V

IC = -6A, VCE = -2V

Collector-Emitter Saturation Voltage (Note 12) VCE(sat)

-19

-170

-190

-240

-225

-30

-220

-250

-350

-300

IC = -0.1A, IB = -10mA

IC = -1A, IB = -20mA

IC = -1.5A, IB = -50mA

IC = -2.5A, IB = -150mA

IC = -3.5A, IB = -350mA

Base-Emitter Turn-On Voltage (Note 12) VBE

(

)

- -0.87 -0.95 V

IC = -3.5A, VCE = -2V

Base-Emitter Saturation Voltage (Note 12) VBE

(

sat

)

- -1.01 -1.12 V

IC = -3.5A, IB = -350mA

Output Capacitance Cobo - 21 30 pF

VCB = -10V. f = 1MHz

Transition Frequency fT 150 180 - MHz

VCE = -10V, IC = -50mA,

f = 100MHz

Turn-on Time ton - 40 - ns

VCC = -10V, IC = -1A

IB1 = IB2 = -10mA Turn-off Time toff - 670 - ns

Notes: 12. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

ZXTC6718MC

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ZXTC6718MC

PNP - Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

1m 10m 100m 1 10

10m

100m

1m 10m 100m 1 10

0.00

0.05

0.10

0.15

0.20

0.25

1m 10m 100m 1 10

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1m 10m 100m 1 10

0.4

0.6

0.8

1.0

1m 10m 100m 1 10

0.2

0.4

0.6

0.8

1.0

180

270

360

450

540

630

VCE(SAT) v IC

Tamb=25°C

IC/IB=100

IC/IB=50

IC/IB=10

VCE(SAT) (V)

IC Collector Cu rrent (A)

VBE(SAT) v IC

IC/IB=50

100°C

25°C

-55°C

VCE(SAT) (V)

IC Collector Current (A)

hFE v IC

VCE=2V

-55°C

25°C

100°C

Normali sed Gai n

IC Collector Cu rrent (A)

25°C

VCE(SAT) v IC

IC/IB=50

100°C

-55°C

VBE(SAT) (V)

IC Collector Current (A)

VBE(ON) v IC

VCE=2V

100°C

25°C

-55°C

VBE(ON) (V )

IC Collector Cu rrent (A)

Typical Gain (hFE)

ZXTC6718MC

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

W-DFN3020-8

Type B

Dim Min Max Typ

A 0.77 0.83 0.80

A1 0 0.05 0.02

A3 - - 0.15

b 0.25 0.35 0.30

D 2.95 3.075 3.00

D2 0.82 1.02 0.92

D4 1.01 1.21 1.11

e - - 0.65

E 1.95 2.075 2.00

E2 0.43 0.63 0.53

L 0.25 0.35 0.30

Z - - 0.375

All Dimensions in mm

Dimensions Value (in mm)

C 0.650

G 0.285

G1 0.090

X 0.400

X1 1.120

Y 0.730

Y1 0.500

Y2 0.365

D4 D4

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