©2001 Fairchild Semiconductor Corporation 2N6796 Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
2N6796 UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
100 V
Drain to Gate Voltage (R
GS
= 20k
Ω)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
100 V
Continuous Drain Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
8
5
A
A
Pulsed Drain Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
32 A
Gate to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
±
20 V
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
S
8A
Pulse Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
32 A
Maximum Power Dissipation (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
25 W
Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.20 W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J,
T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSS
I
D
= 0.25mA, V
GS
= 0V 100 - - V
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 0.5mA 2 - 4 V
Zero Gate Voltage Drain Current I
DSS
V
DS
= 100V, V
GS
= 0V - - 250
µ
A
V
DS
= 80V, V
GS
= 0V, T
C
= 125
o
C - - 1000
µ
A
On-State Drain Current (Note 2) V
DS(ON)
I
D
= 8A, V
GS
= 10V - - 1.56 V
Gate to Source Leakage Current I
GSS
V
GS
=
±
20V - -
±
100 nA
Drain to Source On Resistance (Note 2) r
DS(ON)
I
D
= 5A, V
GS
= 10V - 0.14 0.180
Ω
I
D
= 5A, V
GS
= 10V, T
C
= 125
o
C - - 0.350
Ω
Diode Forward Voltage (Note 2) V
SD
T
C
= 25
o
C, I
S
= 8A, V
GS
= 0V 0.75 - 1.5 V
Forward Transconductance (Note 2) gfs V
DS
= 5V, I
D
= 5A 3 5.5 9 S
Turn-On Delay Time t
d(ON)
V
DD
≅
30V, I
D
= 5A, R
G
= 50
Ω
(Figure 17) MOSFET Switching Times are
Essentially Independent of Operating
Temperature
- - 30 ns
Rise Time t
r
- - 75 ns
Turn-Off Delay Time t
d(OFF)
- - 40 ns
Fall Time t
f
- - 45 ns
Input Capacitance C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz, (Figure 11) 350 600 900 pF
Output Capacitance C
OSS
150 300 500 pF
Reverse Transfer Capacitance C
RSS
50 100 150 pF
Thermal Resistance Junction to Case R
θ
JC
--5
o
C/W
Thermal Resistance Junction to Ambient R
θ
JA
Free Air Operation - - 175
o
C/W
Safe Operating Area SOA V
DS
= 80V, I
D
= 310mA 25 - - W
V
DS
= 3.12V, I
D
= 8A 25 - - W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Reverse Recovery Time t
rr
T
J
= 150
o
C, I
SD
= 8A, dI
SD
/dt = 100A/
µ
s - 300 - ns
Reverse Recovered Charge Q
RR
T
J
= 150
o
C, I
SD
= 8A, dI
SD
/dt = 100A/
µ
s - 1.5 -
µ
C
NOTES:
2. Pulse test: pulse width
≤
300
µ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
2N6796