COMMERCIAL LASERS
Key Features • 35 – 200 µm aperatures available
• High-efficiency, MOCVD quantum well design
• Open heat sink packages and encapsulated devices
• High reliability
The 24xx series diode lasers represent a breakthrough in high continuous wave
(CW) optical power and ultra high brightness with unsurpassed reliability. The
small emitting aperture, combined with low beam divergence, makes the 24xx series
the highest brightness family of CW diode lasers available in the industry.
The 24xx series consists of partially coherent broad-area emitters, with relatively
uniform emission over the emitting aperture. Operation is multi-longitudinal
mode with a spectral envelope width of approximately 2 nm full width half
maximum (FWHM). The far field beam divergence in the plane perpendicular to
the P/N junction is nearly Gaussian, while the lateral beam profile exhibits a
multiple-transverse mode pattern typical of broad-area emitters. The 24xx series
offer up to 8.5 W of output from a 200 µm aperture.
The high efficiency of the quantum well structure, combined with low thermal
resistance epi-down chip mounting, provides minimum junction temperature at
high optical power. Low junction temperature and low thermal resistance
packages extend lifetime and increase reliability.
These diodes are mounted on conventional open heat sink packages and
encapsulated devices, allowing for easy integration into user systems.
Applications
• Solid-state laser pumping
• Medical/ophthalmic applications
• Free-space communication
• Beacons/illumination
Diode Lasers, High Brightness 0.6 to 8.5 W, 8xx nm
24xx Series
NORTH AMERICA: 800 498-JDSU (5378) WEBSITE: www.jdsu.comWORLDWIDE: +800 5378-JDSU
2
Dimensions Diagram (Specifications in inches [mm] unless otherwise noted.)
Standard Tolerances
inches: x.xx = ±0.02 mm: x.x = ±0.5
x.xxx = ±0.010 x.xx = ±0.25
0.086 (2.18)
0.40 Nom. (10.0)
Protective Tab
0.157
(3.98)
0.110 (2.80)
0.025
(0.64)
0.31
(8.0)
0.125
(3.18)
0.25 (6.4)
0.06 (1.5)
Cathode
Lead ( - )
Hole, 0.09 (2.3) Dia.
Counterbore, 0.18 (4.4) Dia.
0.05 (1.2) Deep
Insulator
Stand-off
Laser
Output
Case is
anode ( + )
θ
θ
Package Style: Open Heat Sink (A)
Package Style: SOT-148 Window (G1)
0.10
(2.5)
0.05 (1.3)
Window: AR Coating, Both Surfaces
Thickness: 0.0100 ±0.002
(0.25 ±0.05)
0.26
Nom.
(6.6)
0.20
(5.1)
0.14 (3.5)
Laser Facet Depth
= 0.04 (1.0) Nom.
0.14 (3.6)
0.260 ±0.005
(6.60 ±0.13)
θ
θ
3
1
2
0.354 ±0.005
(9.00 ±0.13)
Laser
Output
Pinout
Pin Description
1 Laser cathode (–)
2 Laser anode, MPD cathode
and case ground
3 Monitor photodiode anode (+)
24XX SERIES DIODE LASERS
(Specifications in inches [mm] unless otherwise noted.)
Standard Tolerances
inches: x.xx = ±0.02 mm: x.x = ±0.5
x.xxx = ±0.010 x.xx = ±0.25
Dimensions Diagram
3
24XX SERIES DIODE LASERS
Package Style: TO-56 Window (J1)
Pinout
Pin Description
1 Laser cathode (–)
2 Laser anode, MPD cathode
and case ground
3 Monitor photodiode anode (+)
20.17
(4.2)
0.05 (1.3)
0.14
(3.6)
0.08
(2.0)
0.04
(1.0)
0.26
(6.5)
0.14
(3.6)
0.10 (2.4)
Window: AR Coating, Both Surfaces
Thickness: 0.010 ±0.001
(0.25 ±0.03)
Laser Facet Depth
= 0.05 (1.2) Nom.
θ
θ
3
1
Laser
Output
Package Style: Open Heat Sink (Y)
Lead (-)
θCathode
θ
Hole, 0.09 (2.3) Dia.
Counterbore, 0.18 (4.4) Dia.
0.05 (1.2) Deep
0.31 (8.0)
0.25 (6.4)
0.125
0.110 (2.80)
(3.18)
0.155 (3.94)
Laser
Output
Case is
anode ( + )
0.06
0.157 (4.0)
(1.5)
0.40 Nom. (10.2)
Insulator
Stand-off
0
1.50
1.75
2.95
4.50
2 CL OF CHIP
2 CL OF SOLDER
0.49±0.04
5.75
(Specifications in mm unless otherwise noted.)
Standard Tolerances
mm: x.x = ±0.5
x.xx = ±0.25
Dimensions Diagram
4
24XX SERIES DIODE LASERS
Package Style: LX Submount
5
24XX SERIES DIODE LASERS
Electro-optical Specifications
Parameter Symbol 2445-G1 0.6 W 2455-G1 1.2 W Unit
Min. Typ. Max. Min. Typ. Max.
Laser Characteristics
CW output power Po– – 0.6 – – 1.2 W
Mean wavelength and tolerance λc808 (±2.5) 808 (±3) nm
808 (±7) 808 (±7)
Spectral width Δλ –2– –2 – nm
Slope efficiency ηd= Po/(Iop–Ith) 1.00 1.15 – 1.00 1.15 – W/A
Conversion efficiency η = Po/(IopVop) – 45 – – 45 – %
Emitting dimensions W x H – 100 x 1 – – 100 x 1 – µm
FWHM beam divergence
Parallel to junction θ// – 7 10 – 7 10 degrees
Perpendicular to junction θ⊥– 30 33 – 30 33 degrees
90% power in angle beam divergence
Parallel to junction θ//,90% 5.6 – – 5.6 – – degrees
Threshold current Ith – 0.32 0.40 – 0.32 0.40 A
Operating current Iop – 0.85 1.00 – 1.35 1.55 A
Operating voltage Vop – 1.8 2.0 – 1.9 2.0 V
Series resistance Rs– 0.27 – – 0.27 – Ω
Thermal resistance Rth – 12 – – 12 – °C/W
Recommended case temperature Tc15 – 30 15 – 30 °C
Absolute Maximum and Minimum Ratings
Breakdown voltage Vb3–– 3–– V
Case operating temperature Top -20 – 50 -20 – 50 °C
Storage temperature range Tstg -40 – 80 -40 – 80 °C
Lead soldering temperature Tis – – 250 (5 sec.) – – 250 (5 sec.) °C
Monitor Photodiode
Sensitivity – 0.2 – 10 0.2 – 10 µA/mW
Capacitance – – 6 – – 6 – pF
Breakdown voltage Vbd –25– –25– V
Operating voltage Vop –10– –10– V
Reliability (at Po, 25°C)
Mean time to failure MTTF – 200,000 – – 200,000 – Hr
Note:
Typical value at 25°C and 0.6 NA collection optics
Available Configurations 2445 Series 2455 series 2465 Series 2475 Series 2495 Series 2496 Series
G-package G-package A-block A-block Y-block Y-block
A-block LX submount
6
24XX SERIES DIODE LASERS
Electro-optical Specifications
Parameter Symbol 2455-A1.2 W 2465-A 2.0 W Unit
Min. Typ. Max. Min. Typ. Max.
Laser Characteristics
CW output power Po– – 1.2 – – 2.0 W
Mean wavelength and tolerance λc808 (±2.5) 808 (±2.5) nm
808 (±7) 808 (±7)
Spectral width Δλ –2– –2 – nm
Slope efficiency ηd= Po/(Iop–Ith) 1.00 1.15 – 0.95 1.10 – W/A
Conversion efficiency η = Po/(IopVop) – 45 – – 45 – %
Emitting dimensions W x H – 100 x 1 – – 100 x 1 – µm
FWHM beam divergence
Parallel to junction θ// – 7 11 – 7 11 degrees
Perpendicular to junction θ⊥– 30 33 – 30 33 degrees
90% power in angle beam divergence
Parallel to junction θ//,90% 5.6 – – 5.6 – – degrees
Threshold current Ith – 0.32 0.40 – 0.65 0.75 A
Operating current Iop – 1.35 1.55 – 2.40 2.80 A
Operating voltage Vop – 1.9 2.0 – 1.8 2.0 V
Series resistance Rs– 0.27 – – 0.09 0.12 Ω
Thermal resistance Rth – 12 – – 6 – °C/W
Recommended case temperature Tc15 – 30 15 – 30 °C
Absolute Maximum and Minimum Ratings
Breakdown voltage Vb3–– 3–– V
Case operating temperature Top -20 – 50 -20 – 50 °C
Storage temperature range Tstg -40 – 80 -40 – 80 °C
Lead soldering temperature Tis – – 250 (5 sec.) – – 250 (5 sec.) °C
Reliability (at Po, 25°C)
Mean time to failure MTTF – 200,000 – – 200,000 – Hr
Note:
Typical value at 25°C and 0.6 NA collection optics
7
24XX SERIES DIODE LASERS
Electro-optical Specifications
Parameter Symbol 2475-A 3.0 W 2495-Y- 5.0 W Unit
Min. Typ. Max. Min. Typ. Max.
Laser Characteristics
CW output power Po– – 3.0 – – 5.0 W
Mean wavelength and tolerance λc808 (±2.5) 808 (±3) nm
808 (±7) 808 (±7)
Spectral width Δλ –2– –2 – nm
Slope efficiency ηd= Po/(Iop–Ith) 0.95 1.10 – 0.90 1.05 – W/A
Conversion efficiency η = Po/(IopVop) – 45 – – 45 – %
Emitting dimensions W x H – 100 x 1 – – 100 x 1 – µm
FWHM beam divergence
Parallel to junction θ// – 7 11 – 8 11 degrees
Perpendicular to junction θ⊥– 30 33 – 30 33 degrees
90% power in angle beam divergence
Parallel to junction θ//,90% 5.6 – – 5.6 – – degrees
Threshold current Ith – 0.65 0.75 – 0.90 1.05 A
Operating current Iop – 3.40 3.90 – 5.80 6.30 A
Operating voltage Vop – 1.9 2.1 – 1.9 2.1 V
Series resistance Rs– 0.09 0.12 – 0.06 0.09 Ω
Thermal resistance Rth – 6 – – 5 – °C/W
Recommended case temperature Tc15 – 30 15 – 30 °C
Absolute Maximum and Minimum Ratings
Breakdown voltage Vb3–– 3–– V
Case operating temperature Top -20 – 50 -20 – 50 °C
Storage temperature range Tstg -40 – 80 -40 – 80 °C
Lead soldering temperature Tis – – 250 (5 sec.) – – 250 (5 sec.) °C
Reliability (at Po, 25°C)
Mean time to failure MTTF – 100,000 – – – – Hr
Note:
Typical value at 25°C and 0.6 NA collection optics
8
24XX SERIES DIODE LASERS
Electro-optical Specifications
Parameter Symbol 2496-Y-8.5 W and 2496-LX-8.5 W Unit
Min. Typ. Max.
Laser Characteristics
CW output power Po– – 8.5 W
Mean wavelength and tolerance λc808 (±3) nm
808 (±7)
Spectral width Δλ –2– nm
Slope efficiency ηd= Po/(Iop–Ith) 1.05 1.12 – W/A
Conversion efficiency η = Po/(IopVop)– 45 – %
Emitting dimensions W x H – 200 x 1 – µm
FWHM beam divergence
Parallel to junction θ// – 9 12 degrees
Perpendicular to junction θ⊥–3036 degrees
Threshold current Ith – 1.9 2.0 A
Operating current Iop – 10.0 10.5 A
Operating voltage Vop – 1.9 2.1 V
Series resistance Rs– 0.03 – Ω
Thermal resistance Rth – 4.0 – °C/W
Recommended case temperature Tc15 – 30 °C
Absolute Maximum and Minimum Ratings
Breakdown voltage Vb3 – – V
Case operating temperature Top -20 – 50 °C
Storage temperature range Tstg -40 – 80 °C
Lead soldering temperature Tis – – 250 (5 sec.) °C
Reliability (at Po, 25°C)
Mean time to failure MTTF – 40,000 – Hr
Note:
Typical value at 25°C and 0.6 NA collection optics
9
24XX SERIES DIODE LASERS
Typical Optical Characteristics
0.0
0.5
1.0
1.5
2.0
0.0 0.5 1.0 1.5 2.0
Current (A)
CW Output Power (W)
2455
Light vs. Current
2465
Light vs. Current
0.0
0.5
1.0
1.5
2.0
2.5
0.0 0.5 1.0 1.5 2.0 2.5
Current (A)
CW Output Power (W)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Current (A)
Current (A)
2475
Light vs. Current
2496
Light vs. Current
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Current (A)
2495
Light vs. Current
CW Output Power (W)
CW Output Power (W)
CW Output Power (W)
0 2 4 6 8 10 12
10
8
6
4
2
0
10
24XX SERIES DIODE LASERS
Ordering Information
For more information on this or other products and their availability, please contact your local JDSU account manager or
JDSU directly at 1-800-498-JDSU (5378) in North America and +800-5378-JDSU worldwide, or via e-mail at
customer.service@jdsu.com.
Sample: 24-00135
Part Number Power Emitter Width Wavelength Package
24-00184 1.2 W 100 μm 808 (± 2.5) 5.6 mm TO-56
24-00185 1.2 W 100 μm 808 (± 7) 5.6 mm TO-56
24-00135 0.6 W 100 μm 808 (± 2.5) 9 mm SOT-148
24-00166 0.6 W 100 μm 808 (± 7) 9 mm SOT-148
24-00138 1.2 W 100 μm 808 (± 2.5) 9 mm SOT-148
24-00141 1.2 W 100 μm 808 (± 2.5) Open Heat Sink "A"
24-00167 1.2 W 100 μm 808 (± 7) 9 mm SOT-148
24-00168 1.2 W 100 μm 808 (± 7) Open Heat Sink "A"
24-00144 2 W 100 μm 808 (± 2.5) Open Heat Sink "A"
24-00169 2 W 100 μm 808 (± 2.5) 9 mm SOT-148
24-00170 2 W 100 μm 808 (± 7) Open Heat Sink "A"
24-00171 2 W 100 μm 808 (± 7) 9 mm SOT-148
24-00147 3 W 100 μm 808 (± 2.5) Open Heat Sink "A"
24-00172 3 W 100 μm 808 (± 7) Open Heat Sink "A"
24-00150 5 W 100 μm 808 (± 3) Open Heat Sink "Y"
24-00173 5 W 100 μm 808 (± 7) Open Heat Sink "Y"
24-00178 8.5 W 200 μm 808 (± 3) Open Heat Sink "Y"
24-00179 8.5 W 200 μm 808 (± 7) Open Heat Sink "Y
24-00180 8.5 W 200 μm 808 (± 3) LX submount
24-00181 8.5 W 200 μm 808 (± 7) LX submount
Typical Optical Characteristics
805 810 815
Far Field Energy
Distribution
Far Field Energy
Distribution
Typical Emission
Spectrum
θ (degrees) θ (degrees) Wavelength (nm)
-30 -20 -10 0 10 20 30
FWHM ~ 30 deg
-10 -5 0 5 10
24XX SERIES DIODE LASERS
NORTH AMERICA:800 498-JDSU (5378) WEBSITE: www.jdsu.comWORLDWIDE:+800 5378-JDSU
User Safety
Safety and Operating Considerations
The laser light emitted from this diode laser is invisible and may be harmful to the human eye. Avoid looking directly into the
diode laser, into the collimated beam along its optical axis, or directly into the fiber when the device is in operation.
CAUTION: THE USE OF OPTICAL INSTRUMENTS WITH THIS PRODUCT WILL INCREASE EYE HAZARD.
Operating the diode laser outside of its maximum ratings may cause device failure or a safety hazard. Power supplies used
with the component must be employed such that the maximum peak optical power cannot be exceeded.
CW diode lasers may be damaged by excessive drive current or switching transients. When power supplies are used, the diode
laser should be connected with the main power on and the output voltage at zero. The current should be increased slowly while
the diode laser output power and the drive current are monitored.
Device degradation accelerates with increased temperature, and therefore careful attention to minimize the case temperature
is advised. For example, life expectancy will decrease by a factor of four if the case is operated at 50°C rather than 30°C.
A proper heatsink for the diode laser on a thermal radiator will greatly enhance laser life. Firmly mount the laser on a radiator
with a thermal impedance of less than 0.5°C/W for increased reliability.
ESD PROTECTION – Electrostatic discharge is the primary cause of unexpected diode laser failure. Take extreme precaution
to prevent ESD. Use wrist straps, grounded work surfaces and rigorous antistatic techniques when handling diode lasers.
Labeling
21 CFR 1040.10 Compliance
Because of the small size of these devices, each of the labels shown is attached to the individual shipping container. They are
illustrated here to comply with 21 CFR 1040.10 as applicable under the Radiation Control for Health and Safety Act of 1968.
Serial Number Identification Label Output Power Danger Labels Package Aperture Label
*SEE MANUAL
INVISIBLE LASER RADIATION*
AVOID EYE OR SKIN EXPOSURE TO
DIRECT OR SCATTERED RADIATION
DANGER
GaAlAs Diode CW 8 W max.
CLASS IV LASER PRODUCT
3110
JDS Uniphase Corporation
MODEL:
MANUFACTURED:
This laser product complies with 21 CFR 1040 as applicable
WAVELENGTH: I op:
S/N:
INVISIBLE LASER
RADIATION IS EMIT-
TED AS SHOWN.
DANGER
3011
Radiation
Laser
A Package Diodes2455 Series
2465 Series
2475 Series
2495 Series
2496 Series
Product specifications and descriptions in this document subject to change without notice. © 2009 JDS Uniphase Corporation 10127871 012 0809 24XXDIODELASER.DS.CL.AE August 2009