Rev. A/AH
2008
-
03
-
26
MMBT4401
TAITRON COMPONEN
T
S INCORPORATED www.taitroncomponents.com
Page 1
of 3
Tel: (800)
-
TAITRON (800)
-
824
-
8766 (661)
-
257
-
6060
Fax: (800)-TAITFA (800)-824-8329 (661)-257-6415
SMD General Purpose
Transistor (NPN)
SMD General Purpose Transistor (NPN)
Features
• NPN Silicon Epitaxial Planar Transistor for
Switching and Amplifier Applications
Mechanical Data
Case: SOT-23, Plastic Package
Terminals: Solderable per MIL-STD-202G, Method 208
Weight: 0.008 gram
Maximum Ratings (T
Ambient
=25ºC unless noted otherwise)
Symbol Description MMBT4401 Unit Conditions
Marking Code 2X
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6.0 V
IC Collector Current 0.6 A
Ptot Power Dissipation above 25°C 250 mW
RθJA Thermal Resistance, Junction to Ambient 357 ° C /W Note 1
TJ Junction Temperature 150 ° C
TSTG Storage Temperature Range -55 to +150 ° C
Note: (1) Device mounted on FR-4 PCB 1.6’’ x 1.6’’ x 0.06’’
SOT-23
Rev. A/AH
2008
-
03
-
25
MMBT4401
SMD General Purpose Transistor (NPN)
www.taitroncomponents.com Page 2
of 3
Electrical Characteristics (T
Ambient
=25ºC unless noted otherwise)
Symbol Description Min. Max. Unit Conditions
20 - VCE=1V, IC=0.1mA
40 - VCE=1V, IC=1mA
80 - VCE=1V, IC=10mA
100 300 VCE=1V, IC=150mA
hFE D.C. Current Gain
40 -
VCE=2V, IC=500mA
V(BR)CBO Collector-Base Breakdown Voltage 60 - V IC=0.1mA, IE=0
V(BR)CEO Collector-Emitter Breakdown Voltage* 40 - V IC=1mA, IB=0
V(BR)EBO Emitter-Base Breakdown Voltage 6.0 - V IE=0.1mA, IC=0
- 0.40 IC=150mA, IB=15mA
VCEsat Collector-Emitter Saturation Voltage - 0.75 V IC=500mA, IB=50mA
0.75 0.95 IC=150mA, IB=15mA
VBEsat Base-Emitter Saturation Voltage - 1.20 V IC=500mA, IB=50mA
ICEV Collector Cut-off Current - 0.1 µA VEB=0.4V, VCE=35V
IBEV Base Cut-off Current - 0.1 µA VEB=0.4V, VCE=35V
hie Input Impedance 1.0 15 kΩ VCE=10V, IC=1mA
f=1KHz,
hre Voltage Feedback Ratio 0.1 8.0 x10־4 VCE=10V, IC=1mA
f=1KHz,
hoe Output Admittance 1.0 30 μS VCE=10V, IC=1mA
f=1KHz,
hfe Small Signal Current Gain 40 500 VCE=10V, IC=1mA
f=1KHz,
fT Current Gain-Bandwidth Product 250 - MHz VCE=10V, IC=20mA,
f=100MHz
CCBO Output Capacitance - 6.5 pF VCB=5V, f=1.0MHz,
IE=0
CEBO Input Capacitance - 30 pF VEB=0.5V, f=1.0MHz,
IC=0
td Delay Time - 15
tr Rise Time - 20
IB1=15mA
IC=150mA
VCC=30V
VEB=2V
ts Storage Time - 225
tf Fall Time - 30
nS
IB1=IB2=15mA
IC=150mA
VCC=30V
*Pulse Test Pulse Width ≤ 300µs, Duty Cycle ≤2.0%
Rev. A/AH
2008
-
03
-
25
MMBT4401
SMD General Purpose Transistor (NPN)
www.taitroncomponents.com Page 3
of 3
Dimensions in mm
How to contact us:
US HEADQUARTERS
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162
Tel: (800) TAITRON (800) 824-8766 (661) 257-6060
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Email: taitron@taitroncomponents.com
Http://www.taitroncomponents.com
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SOT-23
