G E SOLID STATE OL DE p3e7s0a1 0018408 & I yy 57 dranaar over MOSFET. File Number 1592 2N6782 e s Power MOS Field-Effect Transistors a, N-Channel Enhancement-Mode MCCHANNEL ENHANCEMENT MODE s s Power Field-Effect Transistors 0 3.5A, 100V tos(on) = 0.6.2 Features: 6 & SOA is power-dissipation limited s Nanosecond switching speeds @ Linear transtor characteristics @ High input impedance s Majority carrier device 9208-39744 TERMINAL DIAGRAM The 2N6782 is an n-channel enhancement-mode silicon- gate power field-effect transistors designed for applications TERMINAL DESIGNATION such as switching regulators, switching converters, motor GATE drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate- drive power. These types can be operated directly from DRAIN integrated circuits. source (CASEI The 2N6782 is supplied in the JEDEC TO-205AF (LOW PROFILE TO-39) meta! package. S2CS- 97858 JEDEC TO-205AF Absolute Maximum 55 to 1604 caw 351 3875061 GE SOLID STATE 1 Depp 3a7s0at uumawat o ff 59-67" - Standard Power MOSFETs 2N6782 Electrical Characteristics @ Tc = 25C Otherwise See Fig 10 r See Fig. 15 (MOSFET switching times are eseentialty independent of operating tempersture,) Thermal Resistance Funjc _ Junction-to- Case T- [ - [estcwl } Puna Junction-to-Amblent {= "[ = | 176 [-c-w | Free Alt Operetion _j Source-Drain Diode Switching Characteristics (Typical) ty Revere Recovery Time mm ne | Ty = 180C, Ig = SEA, dpi = 100AS Ona Raverse Recoveed Charge 1.0 aC | Ty = 180C, Ip = 3.6A, digit = 100Au0 Lton Forward Turron Tine Jntrinelc turn-on time is negligible. Tum-on spesd is substantially controfied by Le + ip. @ Ty = 20 160C, Pulse Taste: Pulse wich 200s, Duty Cycle < 2%. @ Fapetiive Rating: Pulse wath Emited by - max. *JEDEC regietered value See Transient Thermal impedance Curve (Fig. &. 1p, OMAIN CURRENT (AMPERES) Ip. DAAUS CUAREMT (AMPERES) Q 10 Vg. ORAIN-TO-SOUACE VOLTAGE {VOLTS} Vag. GATE-T0-SOURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics Fig. 2 ~ Typical Transfer Characteristics WW 1S LIMITED BY Rosianp fp, ORAIN CURRENT (AMPERES! tee Ty * 1569C BAX, Ringe + 819 *C- Ip, ORAIN CURRENT (AMPERES) ' ? $ 10 2% $0 WO 200 500 2 a Vos. DAA'N-TO-SOUACE VOLTAGE (VOLTS) Vg. DRAIN TO SOURCE VOXTAGE (VOLTS! Fig. 3 Typical Saturation Characteristics Fig. 4 Maximum Safa Operating Area 2. vt 352-0367 E-12 3675081 GE SOLID STATE Ol DEP} 3875081 0018410 & B r-39-07 Standard Power MOSFETs 2N6782 e & 3 2 z < Ze 10 we 32 20 = t oe as fw 0 az gs 4 72 us th ru Fot2 o< . zz aM 4 re 1 our FACTOR, O+ i Son 2 PER UNIT BASE Rye 0.39 06G CW 3 THEAMAL 2 2 Taw Te fom 2nuctl Foo 1 ws 2 5 4 2 swt 2 5 we 2 ol 2 6 49 2 5 Ij SQUARE WAVE PULSE DURATION (SECONOS} Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration oa o 44> TRANSCONDUCTANCE (SIEMENS) z ~ a tog. REVERSE ORAIN CUARENT {AMPERES) a a 1 4 & 4s 19 12 u a oa a8 (2 16 2000C2kkt Ip, DRAIN CURAEAT (AMPERES! Vgp. SOURCE-T0-ORAIN VOLTAGE (VOLTS? Fig. 6 Typical Transconductance Vs. Orain Current Fig. 7? Typical Source-Drain Diode Forward Voltage 35 288 4.20 a 100 1s 1.50 1a 100 om Ves" Ip t1$A 050 BV p55 DRAIN-TO-SOURCE SAREAKOQWN VOLTAGE {WORMALIZEO} 2 Rasion). ORAIN TO SOURCE ON STATE RESISTANCE (NORMALIZED) ono 025 a7 0 gg a) a9) Ww 10 120 140 40-10 020800 1, JUNCTION TEMPERATURE (C) T, JUNCTION TEMPERATURE (C) Fig. 8 Breakdown Voltage Vs. Temperature Fig. 9 Normalizad On-Resistance Vs. Tempersture 353 0368 E-13 G E SOLID STATE 3875081 GE SOLID STATE O1E 18411 DT-S37-O7 Standard Power MOSFETs 2N6782 354 ~ Aasion} CRAIN TO SOURCE ON RESISTANCE (OHMS) s O1 DE) 3a7soa1 OOLB411 B a: 400 +9 f= 1 Mar : a 3g : Gigs * Cy # Cg Coy 2 Cru" Cys = < te f, w = fom Cat ete z z alae Ce 3 = 4 & 3 < s 3 00 a 2 w # = & t00 3 > Cr 6 n 20 Hn 0 $0 a 2 4 19 Vos, ORAIN TO SOURCE VOLTAGE voLTS) Og, TOTAL GATE CHARGE InC} Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage Fig. 11 Typical Gate Charge Vs. Gate-to-Saurce Voltage 26 Rosiany MEASUREO WITH CURRENT PULSE OF 3 my 28a, GURATION INITIAL 12 25C (HEATING porte eee EFFECT OF 2.0 yy PULSE E53 MINIMAL | ot pgs 10 J _/ tp. ORAIN CURRENT (AMPERES) Lew? os Vos 20v Q 5 10 % 710 6 50 6 100 125 150 lip DRAIN CURRENT (AMPERES) Te, CASE TEMPERATURE ("Ct Fig. 12 Typical On-Resistance Vs. Drain Cursent Fig. 13 ~ Maximum Drain Current Vs. Case Temperature 0 0369 E-14 Po, POWEA DISSIPATION (WATTS) s a Q 20 ol) 6 80 100 2000 ag Te, CASE TEMPERATURE WC: Fig, 14 Power Vs, Temperature Derating Curve ~- 3875081 G E SOLID STATE 0370 OL DE 38?5061 0018412 OQ T-39- Standard Vastend +10_] InFUT 50% Vostetn Ov 10 INPUT PULSE INPUT PULSE AISE TIME FALL TIME NOTES: 1, LHOOSS CASE GROUNDED. 2. GROUNDED CONNECTIONS COMMON TO GAQUMD FLANE ON EOARC. 2. AULSE WIDTH #3 pn, PEALOD ST ms, AMPLITUOE = 10, TERKTRONIX 7023 ose. NOTES: WHEN MEASUAING AISE TIME, Vggign} SHALL 2E AS SPECIFIED ON THE SMFUT WAVEFORM, WHEN WEATUAING FALL TIME, Vggigin SHALL 9E SPECIFIED ON THE INPUT WAVEFORM, THE IKFUT TRANSITION AND ORAIK VOLTAGE RE- SPONSE CETECTOR SHALL HAVE RISE AND FALL RESPONSE TIMES SUCH THAT DOUSLING THESE RESPONSES WILL HOT AFFECT THE RESULTS GREATER THAR THE PRECISION OF MEASUREMENT, THE CURRENT SHALL S SUFFI. CIENTLY SHALE SO THAT DOUBLING 17 DOES MOT AFFECT TESTS MESULTS GAEATER THAN THE PRECISION OF MEASUSEMENT, Fig. 16 Switching Time Test Circult motes: watt Vos TO THE VALUE SPECIFIEO UNDER OETAILE USING A O.1s PULEE WIDTH WITH A MINIMUM OF 1 MINUTE DETWEEN PULSES. INCREASE Vos UNTIL THE SPECIFIEO VALUE OF Ip AND Vpg ANE OBTAINED, CASE TEMPERATURE 25C, 2. SELECT Mg SUCH THAT Ig og 2.5230 Vee. Fig. 16 Safe Oparating Area Test Circuit F-OL ower MOSFETs 2N6782 355