BAL99LT1 - ON Semiconductor

September, 2011 − Rev. 6

1Publication Order Number:

BAL99LT1/D

BAL99LT1G

Switching Diode

Features

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Continuous Reverse Voltage VR70 Vdc

Peak Forward Current IF100 mAdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board

(Note 1), TA = 25°C

Derate above 25°C

PD225

1.8

mW/°C

Thermal Resistance,

Junction−to−Ambient RqJA 556 °C/W

Total Device Dissipation Alumina

Substrate, (Note 2) TA = 25°C

Derate above 25°C

PD300

2.4

mW/°C

Thermal Resistance,

Junction−to−Ambient RqJA 417 °C/W

Junction and Storage Temperature TJ, Tstg −55 to +150 °C

1. FR−5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in 99.5% alumina.

SOT−23

CASE 318

STYLE 18

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JF Specific Device Code

M = Date Code*

G= Pb−Free Package

MARKING DIAGRAM

ANODE

CATHODE

Device Package Shipping†

ORDERING INFORMATION

BAL99LT1G SOT−23

(Pb−Free)

3000 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

JF MG

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

BAL99LT1G

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Reverse Voltage Leakage Current

(VR = 70 Vdc)

(VR = 25 Vdc, TJ = 150°C)

(VR = 70 Vdc, TJ = 150°C)

−

2.5

mAdc

Reverse Breakdown Voltage, (IR = 100 mAdc) V(BR) 70 −Vdc

Forward Voltage,

(IF = 1.0 mAdc)

(IF = 10 mAdc)

(IF = 50 mAdc)

(IF = 150 mAdc)

−

715

855

1000

1250

Recovery Current, (IF = 10 mAdc, VR = 5.0 Vdc, RL = 500 W)QS−45 pC

Diode Capacitance, (VR = 0, f = 1.0 MHz) CD−1.5 pF

Reverse Recovery Time,

(IF = IR = 10 mAdc, RL = 100 W, measured at IR = 1.0 mAdc)

trr −6.0 ns

Forward Recovery Voltage, (IF = 10 mAdc, tr = 20 ns) VFR −1.75 Vdc

TYPICAL CHARACTERISTICS

IR, REVERSE CURRENT (A)μ

1.0

0.2 0.4

VF, FORWARD VOLTAGE (VOLTS)

0.6 0.8 1.0 1.1

0.1

0.00001

150°C

100

VR, REVERSE VOLTAGE (VOLTS)

1.0

0.1

0.01

0.0001 10 20 30 40 50

0.60

VR, REVERSE VOLTAGE (VOLTS)

0.58

0.56

0.48

0.46

CD, DIODE CAPACITANCE (pF)

246 8

IF, FORWARD CURRENT (A)

25°C-40°C

TA = 150°C

TA = 125°C

TA = 85°C

TA = 55°C

TA = 25°C

Figure 1. Forward Voltage Figure 2. Leakage Current

Figure 3. Capacitance

0.01

0.001

0.0001

0.3 0.5 0.7 0.9

0.1

125°C85°C 55°C

-55°C

0.001

7060

TA = -55°C

0.50

0.52

0.54

1357

BAL99LT1G

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PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AN

STYLE 18:

PIN 1. NO CONNECTION

2. CATHODE

3. ANODE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD

THICKNESS IS THE MINIMUM THICKNESS OF

BASE MATERIAL.

4. 318−01 THRU −07 AND −09 OBSOLETE, NEW

STANDARD 318−08.

VIEW C

0.25

SEE VIEW C

DIM

MIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.001

b0.37 0.44 0.50 0.015

c0.09 0.13 0.18 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.10 0.20 0.30 0.004

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

0.35 0.54 0.69 0.014 0.021 0.029

ǒmm

inchesǓ

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

SOLDERING FOOTPRINT

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

BAL99LT1/D

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