4N35, 4N36, 4N37 OPTOCOUPLERS SOES021C - NOVEMBER 1981 - REVISED APRIL 1998 COMPATIBLE WITH STANDARD TTL INTEGRATED CIRCUITS D D D D D D Gallium-Arsenide-Diode Infrared Source Optically Coupled to a Silicon npn Phototransistor High Direct-Current Transfer Ratio High-Voltage Electrical Isolation 1.5-kV, 2.5-kV, or 3.55-kV Rating High-Speed Switching tr = 7 s, tf = 7 s Typical Typical Applications Include Remote Terminal Isolation, SCR and Triac Triggers, Mechanical Relays and Pulse Transformers Safety Regulatory Approval UL/CUL, File No. E65085 DCJ OR 6-TERMINAL DUAL-IN-LINE PACKAGE (TOP VIEW) ANODE CATHODE NC 1 6 2 5 3 4 BASE COLLECTOR EMITTER 4N35 only NC - No internal connection schematic ANODE BASE COLLECTOR CATHODE NC EMITTER absolute maximum ratings at 25C free-air temperature (unless otherwise noted) Input-to-output peak voltage (8-ms half sine wave): 4N35 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.55 kV 4N36 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5 kV 4N37 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 kV Input-to-output root-mean-square voltage (8-ms half sine wave): 4N35 . . . . . . . . . . . . . . . . . . . . . . . . . 2.5 kV 4N36 . . . . . . . . . . . . . . . . . . . . . . . . 1.75 kV 4N37 . . . . . . . . . . . . . . . . . . . . . . . . 1.05 kV Collector-base voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 V Collector-emitter voltage (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Emitter-base voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V Input-diode reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V Input-diode forward current: Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 mA Peak (1 s, 300 pps) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 A Phototransistor continuous collector current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Continuous total power dissipation at (or below) 25C free-air temperature: Infrared-emitting diode (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW Phototransistor (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW Continuous power dissipation at (or below) 25C lead temperature: Infrared-emitting diode (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW Phototransistor (see Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW Operating temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 55C to 100C Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 55C to 150C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260C Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. This value applies when the base-emitter diode is open-circulated. 2. Derate linearly to 100C free-air temperature at the rate of 1.33 mW/C. 3. Derate linearly to 100C free-air temperature at the rate of 4 mW/C. 4. Derate linearly to 100C lead temperature at the rate of 1.33 mW/C. Lead temperature is measured on the collector lead 0.8 mm (1/32 inch) from the case. 5. Derate linearly to 100C lead temperature at the rate of 6.7 mW/C. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. Copyright 1998, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 1 4N35, 4N36, 4N37 OPTOCOUPLERS SOES021C - NOVEMBER 1981 - REVISED APRIL 1998 electrical characteristics at 25C free-air temperature (unless otherwise noted) PARAMETER TEST CONDITIONS V(BR)CBO V(BR)CEO Collector-base breakdown voltage V(BR)EBO IR Emitter-base breakdown voltage IIO Input-to-output current IC(on) ( ) Collector-emitter breakdown voltage Input diode static reverse current On-state collector current Off-state collector current hFE Transistor static forward current transfer ratio VCE(sat) rIO IE = 0, IB = 0, IF = 0 IF = 0 IE = 100 A, VR = 6 V IC = 0, IF = 0 VIO = rated peak value, VCE = 10 V, IF = 10 mA, IC(off) VF IC = 100 A, IC = 10 mA, Input diode static forward voltage Collector-emitter saturation voltage Input-to-output internal resistance MIN 70 TYP VCE = 10 V, TA = - 55C IF = 10 mA, VCE = 10 V, TA = 100C IF = 10 mA, IB = 0, VCE = 10 V, VCE = 30 V, TA = 100C IF = 0 IF = 0, IB = 0 IB = 0, VCE = 5 V, IF = 10 mA IC = 10 mA, IF = 0 IF = 10 mA, IF = 10 mA, TA = - 55C TA = 100C IC = 0.5 mA, VIO = 500 V, IF = 10 mA, See Note 6 UNIT V 30 7 V V t = 8 ms IB = 0 IB = 0, MAX 10 A 100 mA 10 4 mA 4 1 50 nA 500 A 0.8 0.9 1.5 1.7 V 0.7 1.4 0.3 500 IB = 0 mA V 1011 Cio Input-to-output capacitance VIO = 0, f = 1 MHz, See Note 6 1 2.5 pF JEDEC registered data NOTE 6: These parameters are measured between both input-diode leads shorted together and all the phototransistor leads shorted together. switching characteristics at 25C free-air temperature PARAMETER ton toff Time-on time Turn-off time TEST CONDITIONS VCC = 10 V, RL = 100 , IC(on) = 2 mA, See Figure 1 JEDEC registered data 2 POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 MIN TYP MAX 7 10 7 10 UNIT s 4N35, 4N36, 4N37 OPTOCOUPLERS SOES021C - NOVEMBER 1981 - REVISED APRIL 1998 PARAMETER MEASUREMENT INFORMATION 47 Input Input Output (see Note B) + - VCC = 10 V 0V ton toff Output 90% RL = 100 10% VOLTAGE WAVEFORMS TEST CIRCUIT NOTES: A. The input waveform is supplied by a generator with the following characteristics: ZO = 50 , tr 15 ns, duty cycle 1%, tw = 100 s. B. The output waveform is monitored on an oscilloscope with the following characteristics: tr 12 ns, Rin 1 M, Cin 20 pF. Figure 1. Switching Times OFF-STATE COLLECTOR CURRENT vs FREE-AIR TEMPERATURE I C(off) - Off-State Collector Current - nA 10,000 VCE = 10 V IB = 0 IF = 0 4,000 1,000 400 100 40 10 4 1 0.4 0.1 0 10 20 30 40 50 60 70 80 TA - Free-Air Temperature - C 90 100 Transistor Static Forward Current Transfer Ratio (Normalized) TYPICAL CHARACTERISTICS TRANSISTOR STATIC FORWARD CURRENT TRANSFER RATIO (NORMALIZED) vs ON-STATE COLLECTOR CURRENT 1.6 1.4 VCE = 5 V IF = 0 TA = 25C 1.2 1 0.8 0.6 0.4 0.2 0 0.1 Normalized to 1 V at IC = 1 mA 0.2 0.4 1 2 4 10 20 40 100 IC(on) - On-State Collector Current - mA Figure 2 Figure 3 POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 3 4N35, 4N36, 4N37 OPTOCOUPLERS SOES021C - NOVEMBER 1981 - REVISED APRIL 1998 TYPICAL CHARACTERISTICS COLLECTOR CURRENT vs MODULATION FREQUENCY INPUT-DIODE FORWARD CONDUCTION CHARACTERISTICS 160 10 VCC = 10 V IB = 0 TA = 25C 140 TA = 25C RL = 100 2 I F - Forward Current - mA I C - Collector Current - mA 4 1 RL = 1 0.4 0.2 0.1 RL = 475 120 100 TA = 70C 80 60 40 0.04 0.02 20 0.01 0 TA = 25C 1 4 10 40 100 400 1000 0 0.2 0.4 0.6 Figure 4 1.6 1.8 2 IB = 0 TA = 25C See Note A 50 I C - Collector Current - mA I C - Collector Current - mA 1.4 60 VCE = 10 V IB = 0 TA = 25C 10 4 1 0.4 0.1 40 Max Continuous Power Dissipation 30 IF = 20 mA 20 IF = 15 mA IF = 10 mA 10 0.04 IF = 5 mA 0 0.4 1 4 10 40 IF - Input-Diode Forward Current - mA 100 0 2 4 6 8 10 Figure 7 POST OFFICE BOX 655303 12 14 16 18 20 VCE - Collector-Emitter Voltage - V NOTE A. Pulse operation of input diode is required for operation beyond limits shown by dotted lines. Figure 6 4 1.2 COLLECTOR CURRENT vs COLLECTOR-EMITTER VOLTAGE 100 0.01 0.1 1 Figure 5 COLLECTOR CURRENT vs INPUT-DIODE FORWARD CURRENT 40 0.8 VF - Forward Voltage - V fmod - Modulation Frequency - kHz * DALLAS, TEXAS 75265 4N35, 4N36, 4N37 OPTOCOUPLERS SOES021C - NOVEMBER 1981 - REVISED APRIL 1998 TYPICAL CHARACTERISTICS ON-STATE COLLECTOR CURRENT (RELATIVE TO VALUE AT 25C) vs FREE-AIR TEMPERATURE 1.6 On-State Collector Current (Relative to Value at TA = 25 C) 1.4 1.2 VCE = 10 V IB = 0 IF = 10 mA See Note A 1 0.8 0.6 0.4 0.2 0 - 75 - 50 - 25 0 25 50 75 100 125 TA - Free-Air Temperature - C NOTE A. These parameters were measured using pulse techniques, tw = 1 ms, duty cycle 2 %. Figure 8 POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 5 4N35, 4N36, 4N37 OPTOCOUPLERS SOES021C - NOVEMBER 1981 - REVISED APRIL 1998 APPLICATION INFORMATION The devices consist of a gallium-arsenide infrared-emitting diode and an npn silicon phototransistor. Each device is available in a 6-terminal plastic dual-in-line package, shown in Figure 9, or in a DCJ plastic dual surface-mount optocoupler package (see Mechanical Data). 0.370 (9,40) 0.330 (8,38) 6 5 1 2 4 Index Dot (see Note B) 3 (see Note C) C L 0.215 (5,46) 0.115 (2,92) 0.070 (1,78) 0.020 (0,51) C L 0.300 (7,62) T.P. (see Note A) 0.260 (6,61) 0.240 (6,09) 0.070 (1,78) MAX 6 Places Seating Plane 105 90 0.040 (1,01) MIN 0.090 (2,29) 0.050 (1,27) 4 Places 0.021 (0,534) 0.015 (0,381) 6 Places 0.150 (3,81) 0.125 (3,17) 0.012 (0,305) 0.008 (0,203) 0.100 (2,54) T.P. (see Note A) NOTES: A. B. C. D. Terminals are within 0.005 (0,13) radius of true position (T.P.) with maximum material condition and unit installed. Terminal 1 identified by index dot. The dimensions given fall within JEDEC MO-001 AM dimensions. All linear dimensions are in inches (millimeters). Figure 9. Plastic Dual-in-Line Package 6 POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 4N35, 4N36, 4N37 OPTOCOUPLERS SOES021C - NOVEMBER 1981 - REVISED APRIL 1998 MECHANICAL DATA DCJ (R-PDSO-G6) PLASTIC DUAL SMALL-OUTLINE OPTOCOUPLER 0.090 (2,29) 0.050 (1,27) 0.100 (2,54) 0.070 (1,78) 0.045 (1,14) 6 4 0.405 (10,29) 0.385 (9,78) 0.008 (0,20) NOM 0.260 (6,60) 0.240 (6,10) 1 Gage Plane 3 0.370 (9,40) 0.330 (8,38) 0- 5 0.010 (0,25) 0.030 (0,76) MIN 0.150 (3,81) MAX Seating Plane 0.020 (0,51) MAX 0.004 (0,10) 4073328/A 10/96 NOTES: A. All linear dimensions are in inches (millimeters) B. This drawing is subject to change without notice. C. Terminal 1 identified by index dot. POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 7 PACKAGE OPTION ADDENDUM www.ti.com 8-Apr-2005 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty Lead/Ball Finish MSL Peak Temp (3) 4N35 OBSOLETE PDIP N 6 TBD Call TI Call TI 4N35DCJ OBSOLETE OPTO DCJ 6 TBD Call TI Call TI 4N36 OBSOLETE PDIP N 6 TBD Call TI Call TI 4N37 OBSOLETE PDIP N 6 TBD Call TI Call TI (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS) or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. 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